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Journal Articles

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

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Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062705 (2023)
https://doi.org/10.1116/6.0002997
Published: November 2023
View articletitled, Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency
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Journal Articles

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

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J. P. Olvera-Enríquez, L. I. Espinosa-Vega, I. E. Cortés-Mestizo, C. A. Mercado-Ornelas, F. E. Perea-Parrales, A. Belio-Manzano, C. M. Yee-Rendón, V. H. Méndez-García
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042714 (2023)
https://doi.org/10.1116/6.0002674
Published: July 2023
View articletitled, Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes
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Journal Articles

Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition

Open Access
Chih-Wei Hsu, Ivan Martinovic, Roger Magnusson, Babak Bakhit, Justinas Palisaitis, Per. O. Å. Persson, Polla Rouf, Henrik Pedersen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 060402 (2022)
https://doi.org/10.1116/6.0002079
Published: November 2022
View articletitled, Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition
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Includes: Supplementary data
Journal Articles

Precise control of time-varying effusion cell flux in molecular beam epitaxy

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Chris Deimert, Zbig R. Wasilewski
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 043407 (2021)
https://doi.org/10.1116/6.0001019
Published: May 2021
View articletitled, Precise control of time-varying effusion cell flux in molecular beam epitaxy
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Journal Articles

Influence of quantum-confined device fabrication on semiconductor-laser theory

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Weng W. Chow, Frank Jahnke
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032408 (2021)
https://doi.org/10.1116/6.0000767
Published: March 2021
View articletitled, Influence of quantum-confined device fabrication on semiconductor-laser theory
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Journal Articles

True hero of the trade: On the critical contributions of Art Gossard to modern device techonology

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Aaron J. Muhowski, Alec M. Skipper, Stephen D. March, Mark J. W. Rodwell, Seth R. Bank
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 020804 (2021)
https://doi.org/10.1116/6.0000792
Published: February 2021
View articletitled, True hero of the trade: On the critical contributions of Art Gossard to modern device techonology
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Journal Articles

Molecular beam epitaxy of polar III-nitride resonant tunneling diodes

Free
Jimy Encomendero, SM Islam, Debdeep Jena, Huili Grace Xing
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023409 (2021)
https://doi.org/10.1116/6.0000775
Published: February 2021
View articletitled, Molecular beam epitaxy of polar III-nitride resonant tunneling diodes
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Journal Articles

Quantum dot lasers—History and future prospects

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Justin C. Norman, Richard P. Mirin, John E. Bowers
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 020802 (2021)
https://doi.org/10.1116/6.0000768
Published: January 2021
View articletitled, Quantum dot lasers—History and future prospects
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Journal Articles

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

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Jean-Pierre Landesman, Juan Jiménez, Christophe Levallois, Frédéric Pommereau, Cesare Frigeri, Alfredo Torres, Yoan Léger, Alexandre Beck, Ahmed Rhallabi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 041304 (2016)
https://doi.org/10.1116/1.4950445
Published: May 2016
View articletitled, Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
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Journal Articles

Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method

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Farzin Manouchehri, Pouya Valizadeh, M. Z. Kabir
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 021104 (2014)
https://doi.org/10.1116/1.4865562
Published: February 2014
View articletitled, Determination of subband energies and 2DEG characteristics of AlxGa1−xN/GaN heterojunctions using variational method
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Journal Articles

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

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Vitaliy Avrutin, Shopan din Ahmad Hafiz, Fan Zhang, Ümit Özgür, Hadis Morkoç, Arvidas Matulionis
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 31, 050809 (2013)
https://doi.org/10.1116/1.4810789
Published: June 2013
View articletitled, InGaN light-emitting diodes: Efficiency-limiting processes at high injection
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Journal Articles

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

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David A. Browne, Erin C. Young, Jordan R. Lang, Christophe A. Hurni, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 30, 041513 (2012)
https://doi.org/10.1116/1.4727967
Published: June 2012
View articletitled, Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
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Journal Articles

Luminescence enhancement of plasma-etched In As P ∕ In Ga As P quantum wells

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Meng Cao, Yanfeng Lao, Huizhen Wu, Cheng Liu, Zhengsheng Xie, Chunfang Cao, Huizhen Wu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 219–223 (2008)
https://doi.org/10.1116/1.2831497
Published: January 2008
View articletitled, Luminescence enhancement of plasma-etched In As P ∕ In Ga As P quantum wells
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Journal Articles

In Ga N ∕ Ga N blue light emitting diodes with modulation-doped Al Ga N ∕ Ga N heterostructure layers

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Chin-Hsiang Chen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 1001–1004 (2006)
https://doi.org/10.1116/1.2201048
Published: June 2006
View articletitled, In Ga N ∕ Ga N blue light emitting diodes with modulation-doped Al Ga N ∕ Ga N heterostructure layers
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Journal Articles

Observations of electrical and luminescence anomalies in In Ga N ∕ Ga N blue light-emitting diodes

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Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chung-Han Lin, Ya-Fen Wu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 1016–1019 (2006)
https://doi.org/10.1116/1.2207152
Published: June 2006
View articletitled, Observations of electrical and luminescence anomalies in In Ga N ∕ Ga N blue light-emitting diodes
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Journal Articles

Growth and characterization of GaAsSb metamorphic samples on an InP substrate

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F. M. Mohammedy, O. Hulko, B. J. Robinson, D. A. Thompson, M. J. Deen, J. G. Simmons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 587–590 (2006)
https://doi.org/10.1116/1.2194024
Published: May 2006
View articletitled, Growth and characterization of GaAsSb metamorphic samples on an InP substrate
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Journal Articles

Gain spectra of 1.3 μ m GaInNAs laser diodes

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X. Zhang, J. A. Gupta, P. J. Barrios, G. Pakulski, X. Wu, A. Delâge
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 787–790 (2006)
https://doi.org/10.1116/1.2186662
Published: May 2006
View articletitled, Gain spectra of 1.3 μ m GaInNAs laser diodes
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Journal Articles

Measurements of TiO x stress induced on InP ∕ InGaAs ∕ InGaAsP quantum well heterostructures

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A. Francois, V. Aimez, J. Beauvais, D. Barba
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 797–801 (2006)
https://doi.org/10.1116/1.2172925
Published: May 2006
View articletitled, Measurements of TiO x stress induced on InP ∕ InGaAs ∕ InGaAsP quantum well heterostructures
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Journal Articles

Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

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Y. Ding, K.-B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, B. J. Skromme, H. Meidia, S. Mahajan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 22, 1351–1355 (2004)
https://doi.org/10.1116/1.1705644
Published: July 2004
View articletitled, Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy
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Journal Articles

InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p- InGaN tunneling contact layer

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C. H. Chen, S. J. Chang, Y. K. Su
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 22, 1020–1022 (2004)
https://doi.org/10.1116/1.1688362
Published: May 2004
View articletitled, InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p- InGaN tunneling contact layer
Open the PDF for InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p- InGaN tunneling contact layer in another window