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Journal Articles

Electroconductive and photoelectric properties of Pt/(100) β-Ga₂O₃ Schottky barrier diode based on Czochralski grown crystal

Aleksei Almaev, Vladimir Nikolaev, Nikita Yakovlev, Pavel Butenko, Alexander Tsymbalov, Michael Boiko, Viktor Kopyev, Vladimir Krymov, Bogdan Kushnarev, Sevastian Shapenkov, Michael Sharkov, Anton Zarichny

J. Vac. Sci. Technol. A 42, 042802 (2024)

https://doi.org/10.1116/6.0003618

Published: May 2024

View article titled, Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal

Journal Articles

PbS quantum dot thin film dry etching

Nicolas Le Brun, Gilles Cunge, Pascal Gouraud, Camille Petit-Etienne, Linda Parmigiani, Stéphane Allegret-Maret, Denis Guiheux, Jonathan S. Steckel

J. Vac. Sci. Technol. A 42, 033007 (2024)

https://doi.org/10.1116/6.0003335

Published: April 2024

View article titled, PbS quantum dot thin film dry etching

Journal Articles

High-performance a-Ga₂O₃ solar-blind photodetectors by pulsed magnetron sputtering deposition

Difei Xue, Peiwen Lv, Kai Peng, Qiang Hu, Chenlong Chen

J. Vac. Sci. Technol. A 42, 033403 (2024)

https://doi.org/10.1116/6.0003442

Published: March 2024

View article titled, High-performance a-Ga2O3 solar-blind photodetectors by pulsed magnetron sputtering deposition

Journal Articles

Self-powered solar blind ultraviolet photodetector based on amorphous (In_0.23Ga_0.77)₂O₃/bixbyite (In_0.67Ga_0.33)₂O₃ heterojunction

Yiyin Nie, Hongliang Lu, Shujie Jiao, Xianghu Wang, Song Yang, Dongbo Wang, Shiyong Gao, Zhendong Fu, Aimin Li, Jinzhong Wang

J. Vac. Sci. Technol. A 42, 023420 (2024)

https://doi.org/10.1116/6.0003399

Published: February 2024

View article titled, Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction

Journal Articles

Formation of ZnWO₄/WO₃ composite film by RF magnetron sputtering and calcination

Sho Kakuta, Takeru Okada

J. Vac. Sci. Technol. A 42, 013411 (2024)

https://doi.org/10.1116/6.0003180

Published: January 2024

View article titled, Formation of ZnWO4/WO3 composite film by RF magnetron sputtering and calcination

Journal Articles

Cu₂O/ZnO heterojunction self-powered photodetector performance regulation

Siyuan Li, Man Zhao, Dayong Jiang, Mingyang Li, Meijiao Wang, Yanyan Peng, Jingda Gu

J. Vac. Sci. Technol. A 42, 013409 (2024)

https://doi.org/10.1116/6.0003274

Published: January 2024

View article titled, Cu2O/ZnO heterojunction self-powered photodetector performance regulation

Journal Articles

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst

J. Vac. Sci. Technol. A 41, 062705 (2023)

https://doi.org/10.1116/6.0002997

Published: November 2023

View article titled, Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Journal Articles

Synthesis of short-wave infrared Ge_1−ySn_y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

Chi Xu, Ting Hu, Aixin Zhang, Dhruve A. Ringwala, José Menéndez, John Kouvetakis

J. Vac. Sci. Technol. A 40, 063405 (2022)

https://doi.org/10.1116/6.0002052

Published: November 2022

View article titled, Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

Journal Articles

High thickness uniformity of 2-in. wafer-scale β-Ga₂O₃ films grown by MOCVD and photoelectrical properties

Jianying Yue, Xueqiang Ji, Shan Li, Zuyong Yan, Xiaohui Qi, Peigang Li, Weihua Tang

J. Vac. Sci. Technol. A 40, 062702 (2022)

https://doi.org/10.1116/6.0002069

Published: October 2022

View article titled, High thickness uniformity of 2-in. wafer-scale β-Ga2O3 films grown by MOCVD and photoelectrical properties

Journal Articles

Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers

Mehmet Fidan, Özhan Ünverdi, Cem Çelebi

J. Vac. Sci. Technol. A 40, 032203 (2022)

https://doi.org/10.1116/6.0001758

Published: April 2022

View article titled, Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers

Journal Articles

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton, Jihyun Kim

J. Vac. Sci. Technol. A 40, 020804 (2022)

https://doi.org/10.1116/6.0001701

Published: February 2022

View article titled, Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Journal Articles

Exploration of the nonideal behavior observed in engineered, multilayer MgO/Ag/MgO photocathodes

ZhengRong Lee, Linda Spentzouris, Manfred Mascheck, Jeff Terry

J. Vac. Sci. Technol. A 39, 063202 (2021)

https://doi.org/10.1116/6.0001136

Published: September 2021

View article titled, Exploration of the nonideal behavior observed in engineered, multilayer MgO/Ag/MgO photocathodes

Journal Articles

Capacitive β-Ga₂O₃ solar-blind photodetector with graphene electrode

Ayeong Kim, Geonyeop Lee, Jihyun Kim

J. Vac. Sci. Technol. A 39, 053412 (2021)

https://doi.org/10.1116/6.0001217

Published: August 2021

View article titled, Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode

Includes: Supplementary data

Journal Articles

Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

Emanuel Knehr, Mario Ziegler, Sven Linzen, Konstantin Ilin, Patrick Schanz, Jonathan Plentz, Marco Diegel, Heidemarie Schmidt, Evgeni Il’ichev, Michael Siegel

J. Vac. Sci. Technol. A 39, 052401 (2021)

https://doi.org/10.1116/6.0001126

Published: July 2021

View article titled, Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

Journal Articles

Vapor deposition of CsPbBr₃ thin films by evaporation of CsBr and PbBr₂

Iver J. Cleveland, Minh N. Tran, Anamika Dey, Eray S. Aydil

J. Vac. Sci. Technol. A 39, 043415 (2021)

https://doi.org/10.1116/6.0000875

Published: June 2021

View article titled, Vapor deposition of CsPbBr3 thin films by evaporation of CsBr and PbBr2

Includes: Supplementary data

Journal Articles

Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

Ala H. Sabeeh, Alyssa N. Brigman, Jerzy Ruzyllo

J. Vac. Sci. Technol. A 39, 032802 (2021)

https://doi.org/10.1116/6.0000833

Published: May 2021

View article titled, Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

Journal Articles

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

Jinho Bae, Dae-Woo Jeon, Ji-Hyeon Park, Jihyun Kim

J. Vac. Sci. Technol. A 39, 033410 (2021)

https://doi.org/10.1116/6.0000940

Published: April 2021

View article titled, High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3

Journal Articles

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Yong-Hang Zhang, David J. Smith

J. Vac. Sci. Technol. A 39, 030803 (2021)

https://doi.org/10.1116/6.0000802

Published: April 2021

View article titled, Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Journal Articles

True hero of the trade: On the critical contributions of Art Gossard to modern device techonology

Aaron J. Muhowski, Alec M. Skipper, Stephen D. March, Mark J. W. Rodwell, Seth R. Bank

J. Vac. Sci. Technol. A 39, 020804 (2021)

https://doi.org/10.1116/6.0000792

Published: February 2021

View article titled, True hero of the trade: On the critical contributions of Art Gossard to modern device techonology

Journal Articles

Fabrication and characterization of inkjet-printed 2D perovskite optoelectronic devices

Misook Min, Ridwan F. Hossain, Liang-Chieh Ma, Anupama B. Kaul

J. Vac. Sci. Technol. A 38, 052202 (2020)

https://doi.org/10.1116/6.0000083

Published: August 2020

View article titled, Fabrication and characterization of inkjet-printed 2D perovskite optoelectronic devices

NARROW

Topics

Electroconductive and photoelectric properties of Pt/(100) β-Ga₂O₃ Schottky barrier diode based on Czochralski grown crystal

PbS quantum dot thin film dry etching

High-performance a-Ga₂O₃ solar-blind photodetectors by pulsed magnetron sputtering deposition

Self-powered solar blind ultraviolet photodetector based on amorphous (In_0.23Ga_0.77)₂O₃/bixbyite (In_0.67Ga_0.33)₂O₃ heterojunction

Formation of ZnWO₄/WO₃ composite film by RF magnetron sputtering and calcination

Cu₂O/ZnO heterojunction self-powered photodetector performance regulation

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Synthesis of short-wave infrared Ge_1−ySn_y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

High thickness uniformity of 2-in. wafer-scale β-Ga₂O₃ films grown by MOCVD and photoelectrical properties

Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Exploration of the nonideal behavior observed in engineered, multilayer MgO/Ag/MgO photocathodes

Capacitive β-Ga₂O₃ solar-blind photodetector with graphene electrode

Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

Vapor deposition of CsPbBr₃ thin films by evaporation of CsBr and PbBr₂

Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

True hero of the trade: On the critical contributions of Art Gossard to modern device techonology

Fabrication and characterization of inkjet-printed 2D perovskite optoelectronic devices

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