1-20 of 151
Current-voltage characteristic
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Editor’s Pick
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 053204 (2024)
https://doi.org/10.1116/6.0003839
Published: August 2024
View article titled, Switching of kV-class Ga<sub>2</sub>O<sub>3</sub> heterojunction vertical rectifiers
Open the PDF for Switching of kV-class Ga<sub>2</sub>O<sub>3</sub> heterojunction vertical rectifiers in another window
Journal Articles

Plasma electron characterization in electron chemical vapor deposition

Pentti Niiranen, Anna Kapran, Hama Nadhom, Martin Čada, Zdeněk Hubička, Henrik Pedersen, Daniel Lundin
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 023006 (2024)
https://doi.org/10.1116/6.0003408
Published: February 2024
View article titled, Plasma electron characterization in electron chemical vapor deposition
Open the PDF for Plasma electron characterization in electron chemical vapor deposition in another window
Journal Articles

Self-joule heating assisted field emission following the Child–Langmuir law

Yoichiro Neo, Rikuto Oda, Jonghyun Moon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063104 (2023)
https://doi.org/10.1116/5.0159964
Published: September 2023
View article titled, Self-joule heating assisted field emission following the Child–Langmuir law
Open the PDF for Self-joule heating assisted field emission following the Child–Langmuir law in another window
Journal Articles

Low temperature preparation of YSZ-based thin-film limiting current type oxygen sensor

Yuping Jiang, Jingsong Zhang, Dawei Yan, Wei Tang, Jin Wang, Linhong Cao, Yajun Fu, Lin Shu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053413 (2023)
https://doi.org/10.1116/6.0002907
Published: August 2023
View article titled, Low temperature preparation of YSZ-based thin-film limiting current type oxygen sensor
Open the PDF for Low temperature preparation of YSZ-based thin-film limiting current type oxygen sensor in another window
Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Editor’s Pick
S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Published: June 2023
View article titled, Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films
Open the PDF for Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films in another window
Includes: Supplementary data
Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Published: June 2023
View article titled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers
Open the PDF for Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers in another window
Journal Articles

7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 030401 (2023)
https://doi.org/10.1116/6.0002580
Published: April 2023
View article titled, 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup>
Open the PDF for 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup> in another window
Journal Articles

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032701 (2023)
https://doi.org/10.1116/6.0002393
Published: March 2023
View article titled, NiO/β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV
Open the PDF for NiO/β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction lateral rectifiers with reverse breakdown voltage >7 kV in another window
Journal Articles

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Dinusha Herath Mudiyanselage, Dawei Wang, Houqiang Fu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023201 (2023)
https://doi.org/10.1116/6.0002265
Published: January 2023
View article titled, Ultrawide bandgap vertical β-(Al<em><sub>x</sub></em>Ga<sub>1<em>−x</em></sub>)<sub>2</sub>O<sub>3</sub> Schottky barrier diodes on free-standing β-Ga<sub>2</sub>O<sub>3</sub> substrates
Open the PDF for Ultrawide bandgap vertical β-(Al<em><sub>x</sub></em>Ga<sub>1<em>−x</em></sub>)<sub>2</sub>O<sub>3</sub> Schottky barrier diodes on free-standing β-Ga<sub>2</sub>O<sub>3</sub> substrates in another window
Journal Articles

Ga+-focused ion beam damage in n-type Ga2O3

Xinyi Xia, Nahid Sultan Al-Mamun, Daudi Warywoba, Fan Ren, Aman Haque, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053403 (2022)
https://doi.org/10.1116/5.0099892
Published: August 2022
View article titled, Ga<sup>+</sup>-focused ion beam damage in n-type Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Ga<sup>+</sup>-focused ion beam damage in n-type Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry

A. Parisini, P. Mazzolini, O. Bierwagen, C. Borelli, K. Egbo, A. Sacchi, M. Bosi, L. Seravalli, A. Tahraoui, R. Fornari
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042701 (2022)
https://doi.org/10.1116/6.0001857
Published: June 2022
View article titled, Study of SnO/<em>ɛ</em>-Ga<sub>2</sub>O<sub>3</sub> <em>p</em>–<em>n</em> diodes in planar geometry
Open the PDF for Study of SnO/<em>ɛ</em>-Ga<sub>2</sub>O<sub>3</sub> <em>p</em>–<em>n</em> diodes in planar geometry in another window
Includes: Supplementary data
Journal Articles

Comparative studies of cold/hot probe techniques for accurate plasma measurements

Jian-quan Li, Qing-he Zhang, Zan-yang Xing, Wen-qi Lu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 033001 (2022)
https://doi.org/10.1116/6.0001461
Published: March 2022
View article titled, Comparative studies of cold/hot probe techniques for accurate plasma measurements
Open the PDF for Comparative studies of cold/hot probe techniques for accurate plasma measurements in another window
Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063405 (2021)
https://doi.org/10.1116/6.0001347
Published: September 2021
View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga<sub>2</sub>O<sub>3</sub> rectifiers
Open the PDF for Nitrogen ion-implanted resistive regions for edge termination of vertical Ga<sub>2</sub>O<sub>3</sub> rectifiers in another window
Journal Articles

Temperature dependent performance of ITO Schottky contacts on β-Ga2O3

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Marko Tadjer, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 053405 (2021)
https://doi.org/10.1116/6.0001211
Published: August 2021
View article titled, Temperature dependent performance of ITO Schottky contacts on β-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Temperature dependent performance of ITO Schottky contacts on β-Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Erratum: “Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation” [J. Vac. Sci. Technol. A 37, 061501 (2019)]

Joel B. Frey, Kalaivani Sadasivam, George Belev, Habib Mani, Luc Laperriere, Safa Kasap
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 047001 (2021)
https://doi.org/10.1116/6.0001116
Published: May 2021
View article titled, Erratum: “Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation” [J. Vac. Sci. Technol. A 37, 061501 (2019)]
Open the PDF for Erratum: “Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation” [J. Vac. Sci. Technol. A 37, 061501 (2019)] in another window
Journal Articles

Effects of electrochemical potentiostatic activation on carrier transport in AlGaN-based deep-ultraviolet light-emitting diodes

Dong Yeong Kim, Hyunwoong Kang, Koh Eun Lee, Rak Jun Choi, June Key Lee, Jaehee Cho
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023410 (2021)
https://doi.org/10.1116/6.0000827
Published: February 2021
View article titled, Effects of electrochemical potentiostatic activation on carrier transport in AlGaN-based deep-ultraviolet light-emitting diodes
Open the PDF for Effects of electrochemical potentiostatic activation on carrier transport in AlGaN-based deep-ultraviolet light-emitting diodes in another window
Includes: Supplementary data
Journal Articles

Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers

Ribhu Sharma, Minghan Xian, Chaker Fares, Mark E. Law, Marko Tadjer, Karl D. Hobart, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 013406 (2021)
https://doi.org/10.1116/6.0000815
Published: December 2020
View article titled, Effect of probe geometry during measurement of &gt;100 A Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers
Open the PDF for Effect of probe geometry during measurement of >100 A Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers in another window
Journal Articles

Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers

Ribhu Sharma, Minghan Xian, Mark E. Law, Marko Tadjer, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063414 (2020)
https://doi.org/10.1116/6.0000693
Published: November 2020
View article titled, Design and implementation of floating field ring edge termination on vertical geometry β-Ga<sub>2</sub>O<sub>3</sub> rectifiers
Open the PDF for Design and implementation of floating field ring edge termination on vertical geometry β-Ga<sub>2</sub>O<sub>3</sub> rectifiers in another window
Journal Articles

High responsivity tin gallium oxide Schottky ultraviolet photodetectors

Editor’s Pick
Partha Mukhopadhyay, Winston V. Schoenfeld
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 013403 (2020)
https://doi.org/10.1116/1.5128911
Published: December 2019
View article titled, High responsivity tin gallium oxide Schottky ultraviolet photodetectors
Open the PDF for High responsivity tin gallium oxide Schottky ultraviolet photodetectors in another window
Journal Articles

Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation

Editor’s Pick
Joel B. Frey, Kalaivani Sadasivam, George Belev, Habib Mani, Luc Laperriere, Safa Kasap
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 061501 (2019)
https://doi.org/10.1116/1.5121197
Published: September 2019
View article titled, Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation
Open the PDF for Dark current–voltage characteristics of vacuum deposited multilayer amorphous selenium-alloy detectors and the effect of x-ray irradiation in another window