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Journal Articles

Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Editor’s Pick
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 053204 (2024)
https://doi.org/10.1116/6.0003839
Published: August 2024
View article titled, Switching of kV-class Ga<sub>2</sub>O<sub>3</sub> heterojunction vertical rectifiers
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Journal Articles

Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching

Christian Miersch, Sarah Seidel, Alexander Schmid, Thomas Fuhs, Johannes Heitmann, Franziska C. Beyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 022604 (2024)
https://doi.org/10.1116/6.0003350
Published: February 2024
View article titled, Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
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Journal Articles

Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition

Chen Chen, Nicholas Trainor, Shalini Kumari, Henrik Myja, Tilmar Kümmell, Zhiyu Zhang, Yuxi Zhang, Anuj Bisht, Muhtasim Ul Karim Sadaf, Najam U. Sakib, Ying Han, Thomas V. Mc Knight, Andrew R. Graves, Meghan E. Leger, Nicholas D. Redwing, Myeongok Kim, Dorota Anna Kowalczyk, Gerd Bacher, Nasim Alem, Yang Yang, Saptarshi Das, Joan M. Redwing
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 022201 (2024)
https://doi.org/10.1116/6.0003296
Published: February 2024
View article titled, Effect of growth temperature on the microstructure and properties of epitaxial MoS<sub>2</sub> monolayers grown by metalorganic chemical vapor deposition
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Includes: Supplementary data
Journal Articles

Annealing modulated microstructural and electrical properties of plasma-enhanced atomic layer deposition-derived HfO2/SiO2 nanolaminates on AlGaN/GaN

Editor’s Pick
Boxun Wang, Yao Li, Minran Chen, Duo Cao, Feng Liu, Zhongjian Wang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 012401 (2024)
https://doi.org/10.1116/6.0003000
Published: December 2023
View article titled, Annealing modulated microstructural and electrical properties of plasma-enhanced atomic layer deposition-derived HfO<sub>2</sub>/SiO<sub>2</sub> nanolaminates on AlGaN/GaN
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Journal Articles

Significance of plasma-surface interactions in the etch behavior of low-k materials

Adam Pranda, Steven Grzeskowiak, Yu- Hao Tsai, Yusuke Yoshida, Eric Liu, Yun Han, Peter Biolsi, Ken Kobayashi, Nobuyuki Ikezawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063009 (2023)
https://doi.org/10.1116/6.0003014
Published: November 2023
View article titled, Significance of plasma-surface interactions in the etch behavior of low-k materials
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Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View article titled, Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules
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Journal Articles

Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system

Hsin-Ying Lee, Guo-Long Zhu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053406 (2023)
https://doi.org/10.1116/6.0002826
Published: July 2023
View article titled, Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system
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Journal Articles

N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042709 (2023)
https://doi.org/10.1116/6.0002594
Published: June 2023
View article titled, N<sub>2</sub>O grown high Al composition nitrogen doped β-(AlGa)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> using MOCVD
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Journal Articles

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Fedor Hrubišák, Kristína Hušeková, Xiang Zheng, Alica Rosová, Edmund Dobročka, Milan Ťapajna, Matej Mičušík, Peter Nádaždy, Fridrich Egyenes, Javad Keshtkar, Eva Kováčová, James W. Pomeroy, Martin Kuball, Filip Gucmann
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042708 (2023)
https://doi.org/10.1116/6.0002649
Published: June 2023
View article titled, Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices
Open the PDF for Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices in another window
Includes: Supplementary data
Journal Articles

Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

Zhaojing Gao, Dieudonné Niyonkuru, Arthur Yelon, Clara Santato
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043405 (2023)
https://doi.org/10.1116/6.0002410
Published: June 2023
View article titled, Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester
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Includes: Supplementary data
Journal Articles

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Editor’s Pick
Stefan Schmult, Pascal Appelt, Claudia Silva, Steffen Wirth, Andre Wachowiak, Andreas Großer, Thomas Mikolajick
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042702 (2023)
https://doi.org/10.1116/6.0002652
Published: May 2023
View article titled, Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy
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Journal Articles

Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

O. Fesiienko, C. Petit-Etienne, M. Darnon, A. Soltani, H. Maher, E. Pargon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033004 (2023)
https://doi.org/10.1116/6.0002339
Published: April 2023
View article titled, Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices
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Journal Articles

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032701 (2023)
https://doi.org/10.1116/6.0002393
Published: March 2023
View article titled, NiO/β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV
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Journal Articles

Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance

Roberta Hawkins, Xinglu Wang, Naim Moumen, Robert M. Wallace, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023203 (2023)
https://doi.org/10.1116/6.0002264
Published: February 2023
View article titled, Impact of process anneals on high-k/β-Ga<sub>2</sub>O<sub>3</sub> interfaces and capacitance
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Journal Articles

Feasibility study of dative bond formation for bilayer silicon growth under excessive strain

Kumar Vishal, Zhonghang Ji, Yan Zhuang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022201 (2023)
https://doi.org/10.1116/6.0002222
Published: February 2023
View article titled, Feasibility study of dative bond formation for bilayer silicon growth under excessive strain
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Journal Articles

Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063407 (2022)
https://doi.org/10.1116/6.0002186
Published: November 2022
View article titled, Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers
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Journal Articles

High synergy atomic layer etching of AlGaN/GaN with HBr and Ar

Kevin G. Crawford, James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne, David A. J. Moran
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042601 (2022)
https://doi.org/10.1116/6.0001862
Published: May 2022
View article titled, High synergy atomic layer etching of AlGaN/GaN with HBr and Ar
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Journal Articles

Optical dielectric properties of HfO2-based films

Hongyi Dou, Nives Strkalj, Yizhi Zhang, Judith L. MacManus-Driscoll, Quanxi Jia, Haiyan Wang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 033412 (2022)
https://doi.org/10.1116/6.0001651
Published: April 2022
View article titled, Optical dielectric properties of HfO<sub>2</sub>-based films
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Journal Articles

Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications

Won-Bum Lee, Hyun-Jun Jeong, Hye-Mi Kim, Jin-Seong Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 032402 (2022)
https://doi.org/10.1116/6.0001643
Published: April 2022
View article titled, Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications
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Includes: Supplementary data
Journal Articles

Detection of H2 facilitated by ionic liquid gating of tungsten oxide films

Martin S. Barbosa, Ranilson A. da Silva, Clara Santato, Marcelo O. Orlandi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 013202 (2022)
https://doi.org/10.1116/6.0001405
Published: November 2021
View article titled, Detection of H<sub>2</sub> facilitated by ionic liquid gating of tungsten oxide films
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Includes: Supplementary data