Page 1 | Search Results | Journal of Vacuum Science & Technology A

1-20 of 1296

Sort by

Sort Order Select

Journal Articles

Perspective on comparative radiation hardness of Ga₂O₃ polymorphs

S. J. Pearton, Fan Ren, Alexander Y. Polyakov, Eugene B. Yakimov, Leonid Chernyak, Aman Haque

J. Vac. Sci. Technol. A 43, 038501 (2025)

https://doi.org/10.1116/6.0004444

Published: March 2025

View article titled, Perspective on comparative radiation hardness of Ga2O3 polymorphs

Journal Articles

Consequences of low bias frequencies in inductively coupled plasmas on ion angular distributions for high aspect ratio plasma etching

Evan Litch, Hyunjae Lee, Sang Ki Nam, Mark J. Kushner

J. Vac. Sci. Technol. A 43, 033001 (2025)

https://doi.org/10.1116/6.0004250

Published: March 2025

View article titled, Consequences of low bias frequencies in inductively coupled plasmas on ion angular distributions for high aspect ratio plasma etching

Journal Articles

Effect of phase transition on structural, dielectric, and electrical properties of pulsed laser deposited Y doped high-k HfO₂ thin films

Mangla Nand, P. S. Padhi, Shilpa Tripathi, Yogesh Kumar, Pabitra Sahu, Manvendra Kumar, Anit Dawar, Sunil Ojha, Pankaj Misra, Himanshu Srivastava, S. K. Rai

J. Vac. Sci. Technol. A 43, 023411 (2025)

https://doi.org/10.1116/6.0004269

Published: March 2025

View article titled, Effect of phase transition on structural, dielectric, and electrical properties of pulsed laser deposited Y doped high-k HfO2 thin films

Journal Articles

Role of a cyclopentadienyl ligand in Hf precursors using H₂O or O₃ as oxidant in atomic layer deposition

Youngmin Song, Hui-Jin Kim, Soo Hyun Lee, Sujin Kwon, Bonggeun Shong, Il-Kwon Oh

J. Vac. Sci. Technol. A 43, 022414 (2025)

https://doi.org/10.1116/6.0004358

Published: March 2025

View article titled, Role of a cyclopentadienyl ligand in Hf precursors using H2O or O3 as oxidant in atomic layer deposition

Journal Articles

Effects of ozone on physical and electrical properties of In–Ga–Zn–O film by thermal atomic layer deposition

Yongqing Shen, Xinlv Duan, Jinjuan Xiang, Zhengying Jiao, Liguo Chai, Xueli Ma, Yuting Chen, Di Geng, Guilei Wang, Chao Zhao

J. Vac. Sci. Technol. A 43, 022411 (2025)

https://doi.org/10.1116/6.0004355

Published: February 2025

View article titled, Effects of ozone on physical and electrical properties of In–Ga–Zn–O film by thermal atomic layer deposition

Journal Articles

Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

Zsófia Baji, Zsolt Fogarassy, Attila Sulyok, Zsolt Endre Horváth, Zoltán Szabó

J. Vac. Sci. Technol. A 43, 022405 (2025)

https://doi.org/10.1116/6.0004127

Published: February 2025

View article titled, Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

Journal Articles

Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se₂ devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]

Daniel Abou-Ras, Susanne Siebentritt

J. Vac. Sci. Technol. A 43, 023403 (2025)

https://doi.org/10.1116/6.0004284

Published: January 2025

View article titled, Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se2 devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]

Journal Articles

Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride

Gilbert B. Rayner, Jr., Noel O’Toole, Bangzhi Liu, Jeffrey Shallenberger, Jiadi Zhu, Tomás Palacios, Piush Behera, Suraj Cheema, Blaine Johs, Nicholas A. Strnad

J. Vac. Sci. Technol. A 43, 020401 (2025)

https://doi.org/10.1116/6.0004180

Published: January 2025

View article titled, Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride

Journal Articles

Si-doped HZO and ZrO₂ for hysteresis free high-k dielectric

Harshil Kashyap, Ping-Che Lee, Kisung Chae, Matthias Passlack, Ajay K. Yadav, Keith Wong, Srini Nemani, Ellie Yieh, Jeffrey Spiegelman, Kyeongjae Cho, Asif Islam Khan, Andrew C. Kummel

J. Vac. Sci. Technol. A 43, 022401 (2025)

https://doi.org/10.1116/6.0003895

Published: January 2025

View article titled, Si-doped HZO and ZrO2 for hysteresis free high-k dielectric

Journal Articles

Internal chemical potential in mixed covalent-ionic photosensitive systems

Małgorzata Kot, Karsten Henkel, Dieter Schmeißer

J. Vac. Sci. Technol. A 43, 012802 (2025)

https://doi.org/10.1116/6.0004179

Published: January 2025

View article titled, Internal chemical potential in mixed covalent-ionic photosensitive systems

Journal Articles

Effect of the buffer layer on the energy storage performance of Pb_0.97La_0.02Zr_0.5Sn_0.5O₃ thin film

Xin Liu, Jiawei Wang, Zhongshuai Liang, Weidong Zhao, Ruizhi Wang, Yiwei Tong, Yonghong Cheng

J. Vac. Sci. Technol. A 43, 013403 (2025)

https://doi.org/10.1116/6.0004172

Published: December 2024

View article titled, Effect of the buffer layer on the energy storage performance of Pb0.97La0.02Zr0.5Sn0.5O3 thin film

Journal Articles

Investigating the effects of etching systems and low-temperature thermal processing on hafnium zirconium oxide thin film properties

Wen-Hsi Lee, Edward Kuo, Chia-Nung Hung, Tai-Chen Kuo

J. Vac. Sci. Technol. A 43, 012602 (2025)

https://doi.org/10.1116/6.0004040

Published: December 2024

View article titled, Investigating the effects of etching systems and low-temperature thermal processing on hafnium zirconium oxide thin film properties

Journal Articles

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 018501 (2025)

https://doi.org/10.1116/6.0004146

Published: December 2024

View article titled, Perspective on breakdown in Ga2O3 vertical rectifiers

Journal Articles

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 012701 (2025)

https://doi.org/10.1116/6.0004141

Published: December 2024

View article titled, kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Journal Articles

Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment

Wen-Hsi Lee, Chien-Ching Feng, Guan-Fu Chen, Tai-Chen Kuo

J. Vac. Sci. Technol. A 42, 062409 (2024)

https://doi.org/10.1116/6.0004041

Published: November 2024

View article titled, Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment

Journal Articles

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Chi-Yuan Kuo, Wei-Chen Lin, Tsung-Tien Lo, Ching-Hsuan Shen, Ming-Yu Shen, Chia-Chan Lee, Chi-Ping Lin, Yuang-Ming Lin, Haw-Tyng Huang, Po-Chun Yeh, Hsin-Chu Chen, Chih-I Wu

J. Vac. Sci. Technol. A 42, 053412 (2024)

https://doi.org/10.1116/5.0226672

Published: August 2024

View article titled, Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

Journal Articles

MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Yu-Xuan Zeng, Xi-Rui Wang, Ruo-Yun Yang, Wei Huang, Lei Yang, Hong-Ping Ma, Qing-Chun Zhang

J. Vac. Sci. Technol. A 42, 053207 (2024)

https://doi.org/10.1116/5.0202640

Published: August 2024

View article titled, MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Journal Articles

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Behnam Zeinalvand Farzin, Jong Su Kim, Geun Hyeong Kim, DongKun Lee, Im Sik Han, Sang Jun Lee

J. Vac. Sci. Technol. A 42, 053203 (2024)

https://doi.org/10.1116/6.0003787

Published: August 2024

View article titled, Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Journal Articles

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 053204 (2024)

https://doi.org/10.1116/6.0003839

Published: August 2024

View article titled, Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal Articles

Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

Vitaly Kuzmenko, Alexander Melnikov, Alexandr Isaev, Andrey Miakonkikh

J. Vac. Sci. Technol. A 42, 052602 (2024)

https://doi.org/10.1116/6.0003717

Published: July 2024

View article titled, Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

NARROW

Topics

Perspective on comparative radiation hardness of Ga₂O₃ polymorphs

Consequences of low bias frequencies in inductively coupled plasmas on ion angular distributions for high aspect ratio plasma etching

Effect of phase transition on structural, dielectric, and electrical properties of pulsed laser deposited Y doped high-k HfO₂ thin films

Role of a cyclopentadienyl ligand in Hf precursors using H₂O or O₃ as oxidant in atomic layer deposition

Effects of ozone on physical and electrical properties of In–Ga–Zn–O film by thermal atomic layer deposition

Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se₂ devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]

Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride

Si-doped HZO and ZrO₂ for hysteresis free high-k dielectric

Internal chemical potential in mixed covalent-ionic photosensitive systems

Effect of the buffer layer on the energy storage performance of Pb_0.97La_0.02Zr_0.5Sn_0.5O₃ thin film

Investigating the effects of etching systems and low-temperature thermal processing on hafnium zirconium oxide thin film properties

Perspective on breakdown in Ga₂O₃ vertical rectifiers

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment

Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process

MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only