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Journal Articles

MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

Guangying Wang, Yuting Li, Cheng Liu, Qinchen Lin, Surjava Sanyal, Chirag Gupta, Shubhra S. Pasayat
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062706 (2023)
https://doi.org/10.1116/6.0002996
Published: November 2023
View article titled, MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design
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Journal Articles

Germanium surface cleaning and ALD of a protective boron nitride overlayer

Olatomide B. Omolere, Qasim Adesope, Samar Alhowity, Tochi L. Agbara, Jeffry A. Kelber
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062411 (2023)
https://doi.org/10.1116/6.0002928
Published: November 2023
View article titled, Germanium surface cleaning and ALD of a protective boron nitride overlayer
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Includes: Supplementary data
Journal Articles

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Peng Su, Wensen Ai, Xuejiang Chen, Lijun Liu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062704 (2023)
https://doi.org/10.1116/6.0003115
Published: October 2023
View article titled, Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth
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Journal Articles

Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition

Seokhwi Song, Eungju Kim, Kyunghoo Kim, Jangho Bae, Jinho Lee, Chang Hwa Jung, Hanjin Lim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062404 (2023)
https://doi.org/10.1116/6.0002901
Published: October 2023
View article titled, Stabilization of the tetragonal phase in ZrO<sub>2</sub> thin films according to ozone concentration using atomic layer deposition
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Journal Articles

Ion track formation and porosity in InSb induced by swift heavy ion irradiation

Taleb Alwadi, Christian Notthoff, Shankar Dutt, Jessica Wierbik, Nahid Afrin, Alexander Kiy, Patrick Kluth
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063404 (2023)
https://doi.org/10.1116/6.0003007
Published: October 2023
View article titled, Ion track formation and porosity in InSb induced by swift heavy ion irradiation
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Journal Articles

Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Xuguang Luo, Xiong Zhang, Ruiting Fang, Lin Chen, Shenyu Xu, Jia Cui, Zhiyi Lou, Yifeng Xu, Shuchang Wang, Guohua Hu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052705 (2023)
https://doi.org/10.1116/6.0002870
Published: July 2023
View article titled, Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice
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Journal Articles

MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

Fatih F. Ince, Mega Frost, Subhashree Seth, Darryl Shima, Thomas J. Rotter, Ganesh Balakrishnan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052704 (2023)
https://doi.org/10.1116/6.0002681
Published: July 2023
View article titled, MBE growth of In<sub>0.53</sub>Ga<sub>0.47</sub>Sb on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP substrates using the interfacial misfit dislocation arrays
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Journal Articles

Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence

Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, Toshiki Makimoto
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052702 (2023)
https://doi.org/10.1116/6.0002522
Published: July 2023
View article titled, Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence
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Journal Articles

Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system

Hsin-Ying Lee, Guo-Long Zhu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053406 (2023)
https://doi.org/10.1116/6.0002826
Published: July 2023
View article titled, Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system
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Journal Articles

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Stefan P. Svensson, Nadeemullah A. Mahadik, Gela Kipshidze, Dmitri Donetski, Jingze Zhao, Gregory Belenky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 040802 (2023)
https://doi.org/10.1116/6.0002715
Published: June 2023
View article titled, Review of virtual substrate technologies for 6.3 Ångström lattice constants
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Journal Articles

N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042709 (2023)
https://doi.org/10.1116/6.0002594
Published: June 2023
View article titled, N<sub>2</sub>O grown high Al composition nitrogen doped β-(AlGa)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> using MOCVD
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Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Published: June 2023
View article titled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers
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Journal Articles

Influence of boron contents on mechanical properties and high-temperature tribological behavior in (AlCrNbTiB)N coatings

Tzu-Ling Chen, Sheng-Yu Hsu, Yuan-Tai Lai, Shou-Yi Chang, Hsueh-Hsing Hung, Su-Yueh Tsai, Jenq-Gong Duh
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043101 (2023)
https://doi.org/10.1116/6.0002538
Published: May 2023
View article titled, Influence of boron contents on mechanical properties and high-temperature tribological behavior in (AlCrNbTiB)N coatings
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Includes: Supplementary data
Journal Articles

Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Kathleen Kash, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033206 (2023)
https://doi.org/10.1116/6.0002524
Published: April 2023
View article titled, Design of InGaN-ZnSnGa<sub>2</sub>N<sub>4</sub> quantum wells for high-efficiency amber light emitting diodes
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Journal Articles

Transient photocapacitance spectroscopy of deep-levels in (001) β-Ga2O3

Fenfen Fenda Florena, Aboulaye Traoré, Takeaki Sakurai
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033205 (2023)
https://doi.org/10.1116/6.0002378
Published: March 2023
View article titled, Transient photocapacitance spectroscopy of deep-levels in (001) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Effect of vacuum heat treatment on tribological properties of metal-doped CuS/MoS2 coating

Ming Cao, Lan Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033102 (2023)
https://doi.org/10.1116/6.0002360
Published: March 2023
View article titled, Effect of vacuum heat treatment on tribological properties of metal-doped CuS/MoS<sub>2</sub> coating
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Journal Articles

Multiple superconducting transitions in α-Sn/β-Sn mixed films grown by molecular beam epitaxy

Yuanfeng Ding, Bingxin Li, Jinshan Yao, Huanhuan Song, Lian Wei, Yang Lu, Junwei Huang, Hongtao Yuan, Hong Lu, Yan-Feng Chen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023406 (2023)
https://doi.org/10.1116/6.0002273
Published: February 2023
View article titled, Multiple superconducting transitions in <em>α</em>-Sn/<em>β</em>-Sn mixed films grown by molecular beam epitaxy
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Journal Articles

On the possible nature of deep centers in Ga2O3

A. Y. Polyakov, A. I. Kochkova, Amanda Langørgen, Lasse Vines, A. Vasilev, I. V. Shchemerov, A. A. Romanov, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023401 (2023)
https://doi.org/10.1116/6.0002307
Published: January 2023
View article titled, On the possible nature of deep centers in Ga<sub>2</sub>O<sub>3</sub>
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Includes: Supplementary data
Journal Articles

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Dinusha Herath Mudiyanselage, Dawei Wang, Houqiang Fu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023201 (2023)
https://doi.org/10.1116/6.0002265
Published: January 2023
View article titled, Ultrawide bandgap vertical β-(Al<em><sub>x</sub></em>Ga<sub>1<em>−x</em></sub>)<sub>2</sub>O<sub>3</sub> Schottky barrier diodes on free-standing β-Ga<sub>2</sub>O<sub>3</sub> substrates
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Journal Articles

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Andreas Fischer, David Mui, Aaron Routzahn, Ryan Gasvoda, Jim Sims, Thorsten Lill
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012601 (2023)
https://doi.org/10.1116/6.0002244
Published: December 2022
View article titled, Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures
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