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Journal Articles

Growth and properties of Sn-doped sol-gel Ga2O3 thin films

FeaturedOpen Access
Kate M. Wislang, Rodrigo Martinez-Gazoni, Roger J. Reeves, Martin W. Allen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 043410 (2025)
https://doi.org/10.1116/6.0004540
Published: June 2025
View articletitled, Growth and properties of Sn-doped sol-gel Ga2O3 thin films
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Journal Articles

Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6 × 1013/cm2

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Jinxiu Zhao, Zhiyu Lin, Chen Wang, Xinghan Cai, Jun Yu, Lu Kang, Ying Wu, Jeffrey Xu, Mengwei Si
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 043409 (2025)
https://doi.org/10.1116/5.0268479
Published: June 2025
View articletitled, Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6 × 1013/cm2
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Journal Articles

Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method

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D. A. Bauman, D. I. Panov, V. A. Spiridonov, A. Yu. Ivanov, P. A. Bogdanov, W. V. Lundin, E. Yu. Lundina, A. F. Tsatsulnikov, M. V. Tokarev, B. Y. Ber, S. S. Rachkov, D. Yu. Kazantsev, P. N. Brunkov, A. E. Romanov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 042804 (2025)
https://doi.org/10.1116/6.0004535
Published: May 2025
View articletitled, Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method
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Journal Articles

In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride

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Michael Snure, Eric W. Blanton, Gordon Grzybowski, Bita Pourbahari, Nabil Bassim, Nicholas R. Glavin
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 043405 (2025)
https://doi.org/10.1116/6.0004483
Published: May 2025
View articletitled, In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride
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Journal Articles

Luminescence and thermally stimulated conductivity of polycrystalline β-Ga2O3: Mn and β-Ga2O3: Mn, Si

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Andriy Luchechko, Vyacheslav Vasyltsiv, Markiyan Kushlyk, Ihor Syvorotka, Lyudmyla Kostyk, Dmytro Slobodzyan, Yaroslav Zhydachevskyy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 042802 (2025)
https://doi.org/10.1116/6.0004570
Published: May 2025
View articletitled, Luminescence and thermally stimulated conductivity of polycrystalline β-Ga2O3: Mn and β-Ga2O3: Mn, Si
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Journal Articles

Thermal annealing and radiation effects on structural and electrical properties of NbN/GaN superconductor/semiconductor junction

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Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan, Gabriel Calderon Ortiz, Ahmed Ibreljic, Jinwoo Hwang, A. F. M. Anhar Uddin Bhuiyan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 042701 (2025)
https://doi.org/10.1116/6.0004539
Published: May 2025
View articletitled, Thermal annealing and radiation effects on structural and electrical properties of NbN/GaN superconductor/semiconductor junction
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Journal Articles

Insight into the mechanism of lattice damage in ground and polished InAs substrates

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Xinyu Lv, Hui Xie, Chenhui Li, Wenwen Yang, Yihan Bai, Guowei Wang, Youwen Zhao, Yingqiang Xu, Lijie Liu, Li He, Guiying Shen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 033208 (2025)
https://doi.org/10.1116/6.0004487
Published: April 2025
View articletitled, Insight into the mechanism of lattice damage in ground and polished InAs substrates
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Journal Articles

Growth of InBi on InSb(100) via molecular beam epitaxy

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Molly McDonough, Yuxi Zhang, Nasim Alem, Stephanie Law
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 033406 (2025)
https://doi.org/10.1116/6.0004418
Published: April 2025
View articletitled, Growth of InBi on InSb(100) via molecular beam epitaxy
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Journal Articles

Growth regimes of (0001) AlN by ammonia molecular beam epitaxy

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Ashley E. Wissel-Garcia, Feng Wu, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 032706 (2025)
https://doi.org/10.1116/6.0004399
Published: April 2025
View articletitled, Growth regimes of (0001) AlN by ammonia molecular beam epitaxy
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Journal Articles

Optimizing GaAs/AlGaAs growth on GaAs (111)B for enhanced nonlinear efficiency in quantum optical metasurfaces

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T. Blaikie, M. C. Tam, S. Stich, M. Belkin, Z. R. Wasilewski
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 032703 (2025)
https://doi.org/10.1116/6.0004450
Published: April 2025
View articletitled, Optimizing GaAs/AlGaAs growth on GaAs (111)B for enhanced nonlinear efficiency in quantum optical metasurfaces
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Journal Articles

Molybdenum carbonitride Schottky contacts prepared by thermal atomic layer deposition on gallium nitride

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Jacob W. Clark, Chan-Wen Chiu, Bangzhi Liu, Thomas J. Larrabee, Sr., Nathan S. Banner, Nicholas D. Redwing, Jennifer Gray, Suzanne E. Mohney
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 032402 (2025)
https://doi.org/10.1116/6.0004241
Published: March 2025
View articletitled, Molybdenum carbonitride Schottky contacts prepared by thermal atomic layer deposition on gallium nitride
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Journal Articles

Perspective on comparative radiation hardness of Ga2O3 polymorphs

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S. J. Pearton, Fan Ren, Alexander Y. Polyakov, Eugene B. Yakimov, Leonid Chernyak, Aman Haque
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 038501 (2025)
https://doi.org/10.1116/6.0004444
Published: March 2025
View articletitled, Perspective on comparative radiation hardness of Ga2O3 polymorphs
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Journal Articles

Effect of phase transition on structural, dielectric, and electrical properties of pulsed laser deposited Y doped high-k HfO2 thin films

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Mangla Nand, P. S. Padhi, Shilpa Tripathi, Yogesh Kumar, Pabitra Sahu, Manvendra Kumar, Anit Dawar, Sunil Ojha, Pankaj Misra, Himanshu Srivastava, S. K. Rai
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 023411 (2025)
https://doi.org/10.1116/6.0004269
Published: March 2025
View articletitled, Effect of phase transition on structural, dielectric, and electrical properties of pulsed laser deposited Y doped high-k HfO2 thin films
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Journal Articles

Sn-doping concentration dependence of electrical, optical, and magnetic properties in epitaxial Mn-doped indium tin oxide films deposited by RF magnetron sputtering

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Saiki Kitagawa, Toshihiro Nakamura
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 023409 (2025)
https://doi.org/10.1116/6.0004278
Published: February 2025
View articletitled, Sn-doping concentration dependence of electrical, optical, and magnetic properties in epitaxial Mn-doped indium tin oxide films deposited by RF magnetron sputtering
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Journal Articles

Nucleation studies of high-κ aluminum oxide and hafnium oxide thin films on silicon carbide by plasma-enhanced atomic layer deposition

Open Access
B. Galizia, E. Schilirò, P. Fiorenza, S. Peters, J. Zessin, F. Roccaforte, R. Lo Nigro
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 022410 (2025)
https://doi.org/10.1116/6.0004252
Published: February 2025
View articletitled, Nucleation studies of high-κ aluminum oxide and hafnium oxide thin films on silicon carbide by plasma-enhanced atomic layer deposition
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Journal Articles

Remote plasma assisted processing and semiconductor interface electronic structure

FeaturedOpen Access
Leonard J. Brillson
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 020801 (2025)
https://doi.org/10.1116/6.0004200
Published: January 2025
View articletitled, Remote plasma assisted processing and semiconductor interface electronic structure
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Journal Articles

Si-doped HZO and ZrO2 for hysteresis free high-k dielectric

Editor’s PickAvailable to Purchase
Harshil Kashyap, Ping-Che Lee, Kisung Chae, Matthias Passlack, Ajay K. Yadav, Keith Wong, Srini Nemani, Ellie Yieh, Jeffrey Spiegelman, Kyeongjae Cho, Asif Islam Khan, Andrew C. Kummel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 022401 (2025)
https://doi.org/10.1116/6.0003895
Published: January 2025
View articletitled, Si-doped HZO and ZrO2 for hysteresis free high-k dielectric
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Journal Articles

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. II. Experiments and model validation

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Zach Zajo, David S. L. Mui, Ji Zhu, Yusef Shari’ati, Mark Kawaguchi, Eric S. G. Shaqfeh
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 013007 (2025)
https://doi.org/10.1116/6.0004156
Published: January 2025
View articletitled, Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. II. Experiments and model validation
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Journal Articles

Molecular dynamics investigation of heteroepitaxial growth of quaternary AlInGaN on wurtzite-GaN surface along [0001] direction

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Anuj Debnath, Chandan K. Das
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 012702 (2025)
https://doi.org/10.1116/6.0004113
Published: December 2024
View articletitled, Molecular dynamics investigation of heteroepitaxial growth of quaternary AlInGaN on wurtzite-GaN surface along [0001] direction
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Journal Articles

Surface passivation approaches for silicon, germanium, and III–V semiconductors

Editor’s PickOpen Access
Roel J. Theeuwes, Wilhelmus M. M. Kessels, Bart Macco
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 060801 (2024)
https://doi.org/10.1116/6.0004030
Published: November 2024
View articletitled, Surface passivation approaches for silicon, germanium, and III–V semiconductors
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