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Journal Articles

Electron-enhanced atomic layer deposition of Ru thin films using Ru(DMBD)(CO)₃ and effect of forming gas anneal

Michael A. Collings, Marcel Junige, Andrew S. Cavanagh, Victor Wang, Andrew C. Kummel, Steven M. George

J. Vac. Sci. Technol. A 41, 062408 (2023)

https://doi.org/10.1116/6.0002938

Published: November 2023

View article titled, Electron-enhanced atomic layer deposition of Ru thin films using Ru(DMBD)(CO)3 and effect of forming gas anneal

Journal Articles

Correlation of interfacial and dielectric characteristics in atomic layer deposited Al₂O₃/TiO₂ nanolaminates grown with different precursor purge times

Partha Sarathi Padhi, R. S. Ajimsha, S. K. Rai, Sushmita Bhartiya, Aniruddha Bose, Bidyadhar Das, Manoj Kumar Tiwari, Pankaj Misra

J. Vac. Sci. Technol. A 41, 063201 (2023)

https://doi.org/10.1116/6.0002849

Published: September 2023

View article titled, Correlation of interfacial and dielectric characteristics in atomic layer deposited Al2O3/TiO2 nanolaminates grown with different precursor purge times

Includes: Supplementary data

Journal Articles

Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces

Sanjie Liu, Yangfeng Li, Qing Liu, Jiayou Tao, Xinhe Zheng

J. Vac. Sci. Technol. A 41, 052405 (2023)

https://doi.org/10.1116/6.0002639

Published: August 2023

View article titled, Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces

Journal Articles

Carbon impurity concentrations in BaSnO₃ films grown by molecular beam epitaxy using a tin oxide source

Wangzhou Wu, Nicholas G. Combs, Thomas E. Mates, Susanne Stemmer

J. Vac. Sci. Technol. A 38, 043405 (2020)

https://doi.org/10.1116/6.0000122

Published: June 2020

View article titled, Carbon impurity concentrations in BaSnO3 films grown by molecular beam epitaxy using a tin oxide source

Includes: Supplementary data

Journal Articles

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Neeraj Nepal, Virginia R. Anderson, Scooter D. Johnson, Brian P. Downey, David J. Meyer, Zachary R. Robinson, Jeffrey M. Woodward, Karl F. Ludwig, Charles R. Eddy, Jr.

J. Vac. Sci. Technol. A 37, 020910 (2019)

https://doi.org/10.1116/1.5063340

Published: January 2019

View article titled, Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Journal Articles

Influence of N₂/H₂ and N₂ plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition

Mustafa Alevli, Nese Gungor

J. Vac. Sci. Technol. A 36, 01A110 (2018)

https://doi.org/10.1116/1.4998920

Published: December 2017

View article titled, Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition

Journal Articles

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Sydney C. Buttera, David J. Mandia, Seán T. Barry

J. Vac. Sci. Technol. A 35, 01B128 (2017)

https://doi.org/10.1116/1.4972469

Published: December 2016

View article titled, Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Journal Articles

Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

Sebastian Franke, Matthias Baumkötter, Carsten Monka, Sebastian Raabe, Reinhard Caspary, Hans-Hermann Johannes, Wolfgang Kowalsky, Sebastian Beck, Annemarie Pucci, Hassan Gargouri

J. Vac. Sci. Technol. A 35, 01B117 (2017)

https://doi.org/10.1116/1.4971173

Published: December 2016

View article titled, Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

Journal Articles

XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

Theodor Weiss, Jonas Warneke, Volkmar Zielasek, Petra Swiderek, Marcus Bäumer

J. Vac. Sci. Technol. A 34, 041515 (2016)

https://doi.org/10.1116/1.4953469

Published: June 2016

View article titled, XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

Journal Articles

Planar regions of GaAs (001) prepared by Ga droplet motion

Changxi Zheng, Wen-Xin Tang, David E. Jesson

J. Vac. Sci. Technol. A 34, 043201 (2016)

https://doi.org/10.1116/1.4948530

Published: May 2016

View article titled, Planar regions of GaAs (001) prepared by Ga droplet motion

Journal Articles

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Lingcong Le, Xiaoguang He, Xiaojing Li, Y. T. Zhang, G. T. Du

J. Vac. Sci. Technol. A 33, 021505 (2015)

https://doi.org/10.1116/1.4904035

Published: December 2014

View article titled, Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Journal Articles

Carbon-induced trapping levels in oxide dielectrics

Hiral D. Tailor, John L. Lyons, Minseok Choi, Anderson Janotti, Chris G. Van de Walle

J. Vac. Sci. Technol. A 33, 01A120 (2015)

https://doi.org/10.1116/1.4901234

Published: November 2014

View article titled, Carbon-induced trapping levels in oxide dielectrics

Journal Articles

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Ki-Moon Jeon, Jae-Su Shin, Ju-Young Yun, Sang Jun Lee, Sang-Woo Kang

J. Vac. Sci. Technol. A 32, 031511 (2014)

https://doi.org/10.1116/1.4871455

Published: April 2014

View article titled, Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Journal Articles

Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

Micheal Burke, Alan Blake, Ian M. Povey, Michael Schmidt, Nikolay Petkov, Patrick Carolan, Aidan J. Quinn

J. Vac. Sci. Technol. A 32, 031506 (2014)

https://doi.org/10.1116/1.4868215

Published: March 2014

View article titled, Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

Includes: Supplementary data

Journal Articles

Low temperature oxidation of plutonium

Art J. Nelson, Paul Roussel

J. Vac. Sci. Technol. A 31, 031406 (2013)

https://doi.org/10.1116/1.4802596

Published: April 2013

View article titled, Low temperature oxidation of plutonium

Journal Articles

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Kun Tang, Shulin Gu, Jiandong Ye, Shunming Zhu, Shimin Huang, Ran Gu, Rong Zhang, Yi Shi, Youdou Zheng

J. Vac. Sci. Technol. A 30, 051508 (2012)

https://doi.org/10.1116/1.4738949

Published: July 2012

View article titled, Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Journal Articles

In situ study of erosion and deposition of amorphous hydrogenated carbon films by exposure to a hydrogen atom beam

Sabina Markelj, Primož Pelicon, Iztok Čadež, Thomas Schwarz-Selinger, Wolfgang Jacob

J. Vac. Sci. Technol. A 30, 041601 (2012)

https://doi.org/10.1116/1.4723637

Published: June 2012

View article titled, In situ study of erosion and deposition of amorphous hydrogenated carbon films by exposure to a hydrogen atom beam

Journal Articles

Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NH_x radical formation

Hideharu Shimizu, Kaoru Sakoda, Takeshi Momose, Mitsuo Koshi, Yukihiro Shimogaki

J. Vac. Sci. Technol. A 30, 01A144 (2012)

https://doi.org/10.1116/1.3666034

Published: December 2011

View article titled, Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation

Journal Articles

Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

C. N. Hunter, M. H. Check, C. Muratore, A. A. Voevodin

J. Vac. Sci. Technol. A 28, 419–424 (2010)

https://doi.org/10.1116/1.3372401

Published: March 2010

View article titled, Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

Journal Articles

Analysis of carbon in SrTiO 3 grown by hybrid molecular beam epitaxy

Bharat Jalan, Joël Cagnon, Thomas E. Mates, Susanne Stemmer

J. Vac. Sci. Technol. A 27, 1365–1368 (2009)

https://doi.org/10.1116/1.3253355

Published: October 2009

View article titled, Analysis of carbon in SrTiO 3 grown by hybrid molecular beam epitaxy

NARROW

Topics

Electron-enhanced atomic layer deposition of Ru thin films using Ru(DMBD)(CO)₃ and effect of forming gas anneal

Correlation of interfacial and dielectric characteristics in atomic layer deposited Al₂O₃/TiO₂ nanolaminates grown with different precursor purge times

Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces

Carbon impurity concentrations in BaSnO₃ films grown by molecular beam epitaxy using a tin oxide source

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Influence of N₂/H₂ and N₂ plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources

XPS study of thermal and electron-induced decomposition of Ni and Co acetylacetonate thin films for metal deposition

Planar regions of GaAs (001) prepared by Ga droplet motion

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Carbon-induced trapping levels in oxide dielectrics

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

Low temperature oxidation of plutonium

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

In situ study of erosion and deposition of amorphous hydrogenated carbon films by exposure to a hydrogen atom beam

Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NH_x radical formation

Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

Analysis of carbon in SrTiO 3 grown by hybrid molecular beam epitaxy

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