Page 1 | Search Results | Journal of Vacuum Science & Technology A

Skip Nav Destination

1-20 of 442

Sort by

Sort Order Select

Journal Articles

Germanium surface cleaning and ALD of a protective boron nitride overlayer

Olatomide B. Omolere, Qasim Adesope, Samar Alhowity, Tochi L. Agbara, Jeffry A. Kelber

J. Vac. Sci. Technol. A 41, 062411 (2023)

https://doi.org/10.1116/6.0002928

Published: November 2023

View article titled, Germanium surface cleaning and ALD of a protective boron nitride overlayer

Includes: Supplementary data

Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han

J. Vac. Sci. Technol. A 41, 062406 (2023)

https://doi.org/10.1116/6.0003004

Published: October 2023

View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Includes: Supplementary data

Journal Articles

Plasma deposited carbon containing zirconia films as thermal barriers

Vitali Bedarev, Philipp A. Maaß, Anna Thewes, Marc Böke, Achim von Keudell

J. Vac. Sci. Technol. A 41, 053001 (2023)

https://doi.org/10.1116/6.0002745

Published: July 2023

View article titled, Plasma deposited carbon containing zirconia films as thermal barriers

Journal Articles

Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

Zhaojing Gao, Dieudonné Niyonkuru, Arthur Yelon, Clara Santato

J. Vac. Sci. Technol. A 41, 043405 (2023)

https://doi.org/10.1116/6.0002410

Published: June 2023

View article titled, Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

Includes: Supplementary data

Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga₂O₃ rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 41, 043404 (2023)

https://doi.org/10.1116/6.0002722

Published: June 2023

View article titled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Journal Articles

Selective generation of reactive oxygen species in plasma-activated water using CO₂ plasma

Vikas Rathore, Sudhir Kumar Nema

J. Vac. Sci. Technol. A 41, 043001 (2023)

https://doi.org/10.1116/6.0002460

Published: May 2023

View article titled, Selective generation of reactive oxygen species in plasma-activated water using CO2 plasma

Journal Articles

Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates

Lingyu Meng, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao

J. Vac. Sci. Technol. A 40, 062706 (2022)

https://doi.org/10.1116/6.0002179

Published: November 2022

View article titled, Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates

Journal Articles

Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions

Gilles Delie, Peter M. Litwin, Gaby C. Abad, Stephen J. McDonnell, Daniele Chiappe, Valeri V. Afanasiev

J. Vac. Sci. Technol. A 40, 062201 (2022)

https://doi.org/10.1116/6.0001987

Published: September 2022

View article titled, Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions

Journal Articles

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Ashwin Jayaraman, Sang Bok Kim, Luke M. Davis, Xiabing Lou, Xizhu Zhao, Roy G. Gordon

J. Vac. Sci. Technol. A 40, 062402 (2022)

https://doi.org/10.1116/6.0001997

Published: September 2022

View article titled, Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Includes: Supplementary data

Journal Articles

Conductive n-type gallium nitride thin films prepared by sputter deposition

Patrick Loretz, Thomas Tschirky, Fabio Isa, Jörg Patscheider, Matthias Trottmann, Adrian Wichser, Jacopo Pedrini, Emiliano Bonera, Fabio Pezzoli, Dominik Jaeger

J. Vac. Sci. Technol. A 40, 042703 (2022)

https://doi.org/10.1116/6.0001623

Published: June 2022

View article titled, Conductive n-type gallium nitride thin films prepared by sputter deposition

Journal Articles

Impacts of growth conditions on InAlBiAs electrical properties and morphology

James Bork, Wilder Acuna, Joshua Zide

J. Vac. Sci. Technol. A 40, 042702 (2022)

https://doi.org/10.1116/6.0001894

Published: June 2022

View article titled, Impacts of growth conditions on InAlBiAs electrical properties and morphology

Includes: Supplementary data

Journal Articles

Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry

A. Parisini, P. Mazzolini, O. Bierwagen, C. Borelli, K. Egbo, A. Sacchi, M. Bosi, L. Seravalli, A. Tahraoui, R. Fornari

J. Vac. Sci. Technol. A 40, 042701 (2022)

https://doi.org/10.1116/6.0001857

Published: June 2022

View article titled, Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry

Includes: Supplementary data

Journal Articles

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

T.-Huong Dang, M. Konczykowski, H. Jaffrès, V. I. Safarov, H.-J. Drouhin

J. Vac. Sci. Technol. A 40, 033416 (2022)

https://doi.org/10.1116/6.0001821

Published: May 2022

View article titled, Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Journal Articles

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Sneha Banerjee, Peng Zhang

J. Vac. Sci. Technol. A 40, 030802 (2022)

https://doi.org/10.1116/6.0001724

Published: May 2022

View article titled, Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Journal Articles

Manipulation of thin metal film morphology on weakly interacting substrates via selective deployment of alloying species

Andreas Jamnig, Nikolaos Pliatsikas, Gregory Abadias, Kostas Sarakinos

J. Vac. Sci. Technol. A 40, 033407 (2022)

https://doi.org/10.1116/6.0001700

Published: April 2022

View article titled, Manipulation of thin metal film morphology on weakly interacting substrates via selective deployment of alloying species

Journal Articles

Optical constants of single-crystalline Ni(100) from 77 to 770 K from ellipsometry measurements

Farzin Abadizaman, Jaden Love, Stefan Zollner

J. Vac. Sci. Technol. A 40, 033202 (2022)

https://doi.org/10.1116/6.0001763

Published: March 2022

View article titled, Optical constants of single-crystalline Ni(100) from 77 to 770 K from ellipsometry measurements

Journal Articles

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton, Jihyun Kim

J. Vac. Sci. Technol. A 40, 020804 (2022)

https://doi.org/10.1116/6.0001701

Published: February 2022

View article titled, Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Journal Articles

Optoelectronic properties of transparent oxide semiconductor ASnO₃ (A = Ba, Sr, and Ca) epitaxial films and thin film transistors

Anup V. Sanchela, Mian Wei, Hai Jun Cho, Hiromichi Ohta

J. Vac. Sci. Technol. A 40, 020803 (2022)

https://doi.org/10.1116/6.0001474

Published: February 2022

View article titled, Optoelectronic properties of transparent oxide semiconductor ASnO3 (A = Ba, Sr, and Ca) epitaxial films and thin film transistors

Journal Articles

Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl₄ + H₂O

Kristina L. Malinowski, Shawn A. Gregory, Jamie P. Wooding, Oliver B. Hvidsten, Alexandra Jungreis, Mark D. Losego

J. Vac. Sci. Technol. A 40, 013418 (2022)

https://doi.org/10.1116/6.0001544

Published: January 2022

View article titled, Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl4 + H2O

Journal Articles

Atomic-scale growth, imaging, spectroscopy, and electronic transport properties of metal-oxide films and interfaces

Takeo Ohsawa

J. Vac. Sci. Technol. A 40, 010806 (2022)

https://doi.org/10.1116/6.0001469

Published: December 2021

View article titled, Atomic-scale growth, imaging, spectroscopy, and electronic transport properties of metal-oxide films and interfaces

NARROW

Topics

Germanium surface cleaning and ALD of a protective boron nitride overlayer

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Plasma deposited carbon containing zirconia films as thermal barriers

Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga₂O₃ rectifiers

Selective generation of reactive oxygen species in plasma-activated water using CO₂ plasma

Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates

Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Conductive n-type gallium nitride thin films prepared by sputter deposition

Impacts of growth conditions on InAlBiAs electrical properties and morphology

Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Manipulation of thin metal film morphology on weakly interacting substrates via selective deployment of alloying species

Optical constants of single-crystalline Ni(100) from 77 to 770 K from ellipsometry measurements

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Optoelectronic properties of transparent oxide semiconductor ASnO₃ (A = Ba, Sr, and Ca) epitaxial films and thin film transistors

Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl₄ + H₂O

Atomic-scale growth, imaging, spectroscopy, and electronic transport properties of metal-oxide films and interfaces

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only