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Special Topic Collection Commemorating the Career of John Coburn

This collection of articles honors the seminal and interdisciplinary contributions of Dr. John Coburn in Plasma Science and Technology and Plasma-Surface Interactions. The articles are on important challenges, new developments, and current understanding in a wide range of topics in Plasma Science and Technology and Plasma-Surface Interactions and offers the readers the newest, outstanding research in the many fields John Coburn influenced and participated in. The collection caters to both scientists and professionals in industry while connecting fundamental research with practical applications.

Guest Editor(s): David Graves and Eray Aydil

Atomic Layer Etching (ALE)

Mechanism of SiN etching rate fluctuation in atomic layer etching

Akiko Hirata; Masanaga Fukasawa; Katsuhisa Kugimiya; Kojiro Nagaoka; Kazuhiro Karahashi; Satoshi Hamaguchi; Hayato Iwamoto

https://doi.org/10.1116/6.0000257

Plasma Science and Technology

Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas

Jordan Piet; Wilfrid Faider; Aurélie Girard; François Boulard; Christophe Cardinaud

https://doi.org/10.1116/6.0000397

Atomic Layer Etching (ALE)

Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)₂ on a nickel oxide surface in atomic layer etching processes

Abdulrahman H. Basher; Marjan Krstić; Karin Fink; Tomoko Ito; Kazuhiro Karahashi; Wolfgang Wenzel; Satoshi Hamaguchi

https://doi.org/10.1116/6.0000293

Review Articles

Etch selectivity during plasma-assisted etching of SiO₂ and SiN_x: Transitioning from reactive ion etching to atomic layer etching

Ryan J. Gasvoda; Zhonghao Zhang; Scott Wang; Eric A. Hudson; Sumit Agarwal

https://doi.org/10.1116/6.0000395

Plasma Science and Technology

Effects of O₂ addition on in-plasma photo-assisted etching of Si with chlorine

Linfeng Du; Emilia W. Hirsch; Demetre J. Economou; Vincent M. Donnelly

https://doi.org/10.1116/6.0000338

Atomic Layer Etching (ALE)

In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar⁺ ions and Cl radicals

Masaki Hasegawa; Takayoshi Tsutsumi; Atsushi Tanide; Shohei Nakamura; Hiroki Kondo; Kenji Ishikawa; Makoto Sekine; Masaru Hori

https://doi.org/10.1116/6.0000124

Plasma Science and Technology

Atomic layer etching of metals with anisotropy, specificity, and selectivity

Xia Sang; Yantao Xia; Philippe Sautet; Jane P. Chang

https://doi.org/10.1116/6.0000225

Plasma Science and Technology

Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

Robert Soriano; Gilles Cunge; Nader Sadeghi

https://doi.org/10.1116/6.0000134

Plasma Science and Technology

Effect of frequency and applied voltage of an atmospheric-pressure dielectric-barrier discharge on breakdown and hydroxyl-radical generation with a liquid electrode

Joshua M. Blatz; Daniel Benjamin; Faraz A. Choudhury; Benjamin B. Minkoff; Michael R. Sussman; J. Leon Shohet

https://doi.org/10.1116/6.0000125

Review Articles

The role of plasma in plasma-enhanced atomic layer deposition of crystalline films

David R. Boris; Virginia D. Wheeler; Neeraj Nepal; Syed B. Qadri; Scott G. Walton; Charles (Chip) R. Eddy

https://doi.org/10.1116/6.0000145

Plasma Science and Technology

O^·, H^·, and ^·OH radical etching probability of polystyrene obtained for a radio frequency driven atmospheric pressure plasma jet

V. S. Santosh K. Kondeti; Yashuang Zheng; Pingshan Luan; Gottlieb S. Oehrlein; Peter J. Bruggeman

https://doi.org/10.1116/6.0000123

Plasma Science and Technology

Gas-phase diagnostic studies of H₂ and CH₄ inductively coupled plasmas

Tara L. Van Surksum; Ellen R. Fisher

https://doi.org/10.1116/6.0000090

Plasma Science and Technology

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Christophe Vallée; Marceline Bonvalot; Samia Belahcen; Taguhi Yeghoyan; Moustapha Jaffal; Rémi Vallat; Ahmad Chaker; Gautier Lefèvre; Sylvain David; Ahmad Bsiesy; Nicolas Possémé; Rémy Gassilloud; Agnès Granier

https://doi.org/10.1116/1.5140841

Atomic Layer Etching (ALE)

Atomic-layer etching of GaN by using an HBr neutral beam

Daisuke Ohori; Takahiro Sawada; Kenta Sugawara; Masaya Okada; Ken Nakata; Kazutaka Inoue; Daisuke Sato; Hideyuki Kurihara; Seiji Samukawa

https://doi.org/10.1116/6.0000126

Plasma Science and Technology

Utilizing photosensitive polymers to evaluate UV radiation exposures in different plasma chamber configurations

Luxherta Buzi; Hiroyuki Miyazoe; Matthew. P. Sagianis; Nathan Marchack; John M. Papalia; Sebastian. U. Engelmann

https://doi.org/10.1116/1.5143032

Thin Films

Chemical vapor deposition of metallic films using plasma electrons as reducing agents

Hama Nadhom; Daniel Lundin; Polla Rouf; Henrik Pedersen

https://doi.org/10.1116/1.5142850

Plasma Science and Technology

Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics

Askar A. Rezvanov; Andrey V. Miakonkikh; Dmitry S. Seregin; Alexey S. Vishnevskiy; Konstantin A. Vorotilov; Konstantin V. Rudenko; Mikhail R. Baklanov

https://doi.org/10.1116/1.5143417

Atomic Layer Etching (ALE)