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Journal Articles

Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films

Sanghun Lee, Seunggi Seo, Tae Hyun Kim, Hwi Yoon, Seonyeong Park, Seunggyu Na, Jeongwoo Seo, Soo-Hyun Kim, Seung-min Chung, Hyungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 162, 124203 (2025)
https://doi.org/10.1063/5.0257779
Published: March 2025
View articletitled, Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films
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Journal Articles

Effect of active layer thickness on device performance of InSnZnO thin-film transistors grown by atomic layer deposition

Yu Zhang, Binbin Luo, Runzhou Li, Xuefeng Wu, Rongxu Bai, Qingqing Sun, David W. Zhang, Shen Hu, Li Ji
Journal: The Journal of Chemical Physics
J. Chem. Phys. 162, 054718 (2025)
https://doi.org/10.1063/5.0249972
Published: February 2025
View articletitled, Effect of active layer thickness on device performance of InSnZnO thin-film transistors grown by atomic layer deposition
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Journal Articles

Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition method

Woohyun Park, Yongjin Park, Sungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 161, 234706 (2024)
https://doi.org/10.1063/5.0239966
Published: December 2024
View articletitled, Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition method
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Journal Articles

Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells

Yue Liu, Huamei Zhang, Rutao Meng, Jiabin Dong, Xuejun Xu, Jincheng Zhang, Yi Zhang
Journal: The Journal of Chemical Physics
J. Chem. Phys. 161, 124709 (2024)
https://doi.org/10.1063/5.0232512
Published: September 2024
View articletitled, Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells
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Journal Articles

Optical quantification of the weak van der Waals coupling between multilayer antimonene and bilayer MoS2 using ultrafast coherent vibration spectroscopy

Peng-Jui Wang, Zih-Sian Yang, Che-Jia Chang, Shih-Yen Lin, Chi-Kuang Sun
Journal: The Journal of Chemical Physics
J. Chem. Phys. 161, 094704 (2024)
https://doi.org/10.1063/5.0216616
Published: September 2024
View articletitled, Optical quantification of the weak van der Waals coupling between multilayer antimonene and bilayer MoS2 using ultrafast coherent vibration spectroscopy
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Journal Articles

HfAlOx-based ferroelectric memristor for nociceptor and synapse functions

Dongyeol Ju, Yongjin Park, Minseo Noh, Minsuk Koo, Sungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 161, 084706 (2024)
https://doi.org/10.1063/5.0224896
Published: August 2024
View articletitled, HfAlOx-based ferroelectric memristor for nociceptor and synapse functions
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Journal Articles

In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN

Marc J. M. Merkx, Ilker Tezsevin, Pengmei Yu, Thijs Janssen, Rik H. G. M. Heinemans, Rik J. Lengers, Jiun-Ruey Chen, Christopher J. Jezewski, Scott B. Clendenning, Wilhelmus M. M. Kessels, Tania E. Sandoval, Adriaan J. M. Mackus
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 204701 (2024)
https://doi.org/10.1063/5.0207496
Published: May 2024
View articletitled, In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN
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Journal Articles

Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems

Juri Kim, Subaek Lee, Yeongkyo Seo, Sungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 144703 (2024)
https://doi.org/10.1063/5.0202610
Published: April 2024
View articletitled, Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems
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Journal Articles

Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition

Whang Je Woo, Seunggi Seo, Hwi Yoon, Sanghun Lee, Donghyun Kim, Seonyeong Park, Youngjun Kim, Inkyu Sohn, JuSang Park, Seung-min Chung, Hyungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 104701 (2024)
https://doi.org/10.1063/5.0196668
Published: March 2024
View articletitled, Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition
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Includes: Supplementary data
Journal Articles

Erratum: “Understanding chemical and physical mechanisms in atomic layer deposition” [J. Chem. Phys. 152, 040902 (2020)]

Nathaniel E. Richey, Camila de Paula, Stacey F. Bent
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 089901 (2024)
https://doi.org/10.1063/5.0202455
Published: February 2024
View articletitled, Erratum: “Understanding chemical and physical mechanisms in atomic layer deposition” [J. Chem. Phys. 152, 040902 (2020)]
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Journal Articles

Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

Jiyuan Zhu, Shen Hu, Bojia Chen, Shice Wei, Yu Zhang, Xuefeng Wu, Xingli Zou, Xionggang Lu, Qingqing Sun, David W. Zhang, Li Ji
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 044706 (2024)
https://doi.org/10.1063/5.0188101
Published: January 2024
View articletitled, Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation
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Includes: Supplementary data
Journal Articles

Increase in the effective viscosity of polyethylene under extreme nanoconfinement

Tian Ren, Zachary R. Hinton, Renjing Huang, Thomas H. Epps, III, LaShanda Korley, Raymond J. Gorte, Daeyeon Lee
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 024909 (2024)
https://doi.org/10.1063/5.0185144
Published: January 2024
View articletitled, Increase in the effective viscosity of polyethylene under extreme nanoconfinement
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Includes: Supplementary data
Journal Articles

Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition

Hwi Yoon, Yujin Lee, Ga Yeon Lee, Seunggi Seo, Bo Keun Park, Taek-Mo Chung, Il-Kwon Oh, Hyungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 024302 (2024)
https://doi.org/10.1063/5.0182690
Published: January 2024
View articletitled, Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition
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Journal Articles

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer

Juri Kim, Yongjin Park, Jung-Kyu Lee, Sungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 159, 214711 (2023)
https://doi.org/10.1063/5.0182699
Published: December 2023
View articletitled, Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer
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Includes: Supplementary data
Journal Articles

Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films

Jiyuan Zhu, Shen Hu, Bojia Chen, Yu Zhang, Shice Wei, Xiangyu Guo, Xingli Zou, Xionggang Lu, Qingqing Sun, David W. Zhang, Li Ji
Journal: The Journal of Chemical Physics
J. Chem. Phys. 159, 174704 (2023)
https://doi.org/10.1063/5.0170886
Published: November 2023
View articletitled, Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films
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Includes: Supplementary data
Journal Articles

Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors

Jason Tolentino, Markelle Gibbs, Alex Abelson, Matt Law
Journal: The Journal of Chemical Physics
J. Chem. Phys. 159, 044709 (2023)
https://doi.org/10.1063/5.0152100
Published: July 2023
View articletitled, Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors
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Includes: Supplementary data
Journal Articles

Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study

Giane B. Damas, Karl Rönnby, Henrik Pedersen, Lars Ojamäe
Journal: The Journal of Chemical Physics
J. Chem. Phys. 158, 174313 (2023)
https://doi.org/10.1063/5.0148070
Published: May 2023
View articletitled, Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study
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Includes: Supplementary data
Journal Articles

Computational and experimental studies on band alignment of ZnO/InxGa2−xO3/GaN heterojunctions

Xilai Liu, Chunxiang Zhao, Chunyao Niu, Yu Jia
Journal: The Journal of Chemical Physics
J. Chem. Phys. 158, 134720 (2023)
https://doi.org/10.1063/5.0134277
Published: April 2023
View articletitled, Computational and experimental studies on band alignment of ZnO/InxGa2−xO3/GaN heterojunctions
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Journal Articles

Excitation wavelength-dependent photoluminescence decay of single quantum dots near plasmonic gold nanoparticles

Yonglei Sun, Yongchen Wang, Hua Zhu, Na Jin, Adnan Mohammad, Necmi Biyikli, Ou Chen, Kun Chen, Jing Zhao
Journal: The Journal of Chemical Physics
J. Chem. Phys. 156, 154701 (2022)
https://doi.org/10.1063/5.0089090
Published: April 2022
View articletitled, Excitation wavelength-dependent photoluminescence decay of single quantum dots near plasmonic gold nanoparticles
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Includes: Supplementary data
Journal Articles

Atom by atom built subnanometer copper cluster catalyst for the highly selective oxidative dehydrogenation of cyclohexene

Stanislav Valtera, Juraj Jašík, Mykhailo Vaidulych, Joanna Elżbieta Olszówka, Magda Zlámalová, Hana Tarábková, Ladislav Kavan, Štefan Vajda
Journal: The Journal of Chemical Physics
J. Chem. Phys. 156, 114302 (2022)
https://doi.org/10.1063/5.0065350
Published: March 2022
View articletitled, Atom by atom built subnanometer copper cluster catalyst for the highly selective oxidative dehydrogenation of cyclohexene
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Includes: Supplementary data