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Journal Articles

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Editor’s PickOpen Access
W. R. Wampler, G. Vizkelethy, M. Titze
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 204501 (2024)
https://doi.org/10.1063/5.0237175
Published: November 2024
View articletitled, Statistical analysis of displacement damage in small devices from neutron and ion irradiation
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Journal Articles

Physically constrained learning of MOS capacitor electrostatics

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Tejas Govind Indani, Kunal Narayan Chaudhury, Sirsha Guha, Santanu Mahapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 184903 (2023)
https://doi.org/10.1063/5.0168104
Published: November 2023
View articletitled, Physically constrained learning of MOS capacitor electrostatics
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Includes: Supplementary data
Journal Articles

Significantly improved triethylamine sensing performance and mechanism of tin oxide by doping Pd: Experimental and DFT studies

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Gaojie Li, Linqi Zhang, Kai Du, Xinxin Wang, Menghao Yin
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 084502 (2023)
https://doi.org/10.1063/5.0161984
Published: August 2023
View articletitled, Significantly improved triethylamine sensing performance and mechanism of tin oxide by doping Pd: Experimental and DFT studies
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Journal Articles

Plasma enhanced chemical vapor deposition of p-type Cu2O from metal organic precursors

Open Access
D. E. Gomersall, A. J. Flewitt
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 215301 (2022)
https://doi.org/10.1063/5.0089757
Published: June 2022
View articletitled, Plasma enhanced chemical vapor deposition of p-type Cu2O from metal organic precursors
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Journal Articles

High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

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Sandeep K. Chaudhuri, OmerFaruk Karadavut, Joshua W. Kleppinger, Krishna C. Mandal
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 074501 (2021)
https://doi.org/10.1063/5.0059151
Published: August 2021
View articletitled, High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
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Journal Articles

Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2

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Elias B. Frantz, David J. Michalak, Nicholas J. Harmon, Eric M. Henry, Stephen J. Moxim, Michael E. Flatté, Sean W. King, James S. Clarke, Patrick M. Lenahan
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 065701 (2021)
https://doi.org/10.1063/5.0057871
Published: August 2021
View articletitled, Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2
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Journal Articles

Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

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Tsung-En Lee, Mengnan Ke, Kimihiko Kato, Mitsuru Takenaka, Shinichi Takagi
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 185705 (2020)
https://doi.org/10.1063/1.5144198
Published: May 2020
View articletitled, Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing
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Journal Articles

Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

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S.-H. Yoon, K. Kato, C. Yokoyama, D.-H. Ahn, M. Takenaka, S. Takagi
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 184501 (2019)
https://doi.org/10.1063/1.5111630
Published: November 2019
View articletitled, Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties
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Journal Articles

Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions

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J. Zhang, X. Chen, L. Wang, Z. S. Zheng, H. P. Zhu, B. Li, J. T. Gao, D. L. Li, J. J. Luo, Z. S. Han, C. Song, X. Y. Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 115701 (2019)
https://doi.org/10.1063/1.5052584
Published: March 2019
View articletitled, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions
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Journal Articles

Thickness-dependent dielectric breakdown and nanopore creation on sub-10-nm-thick SiN membranes in solution

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Itaru Yanagi, Koji Fujisaki, Hirotaka Hamamura, Ken-ichi Takeda
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 045301 (2017)
https://doi.org/10.1063/1.4974286
Published: January 2017
View articletitled, Thickness-dependent dielectric breakdown and nanopore creation on sub-10-nm-thick SiN membranes in solution
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Journal Articles

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

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M. Kasper, G. Gramse, J. Hoffmann, C. Gaquiere, R. Feger, A. Stelzer, J. Smoliner, F. Kienberger
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 184301 (2014)
https://doi.org/10.1063/1.4897922
Published: November 2014
View articletitled, Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz
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Journal Articles

Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

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S. Fadida, P. Shekhter, D. Cvetko, L. Floreano, A. Verdini, L. Nyns, S. Van Elshocht, I. Kymissis, M. Eizenberg
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 164101 (2014)
https://doi.org/10.1063/1.4898645
Published: October 2014
View articletitled, Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
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Journal Articles

The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

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L. Rebohle, Y. Berencén, R. Wutzler, M. Braun, D. Hiller, J. M. Ramírez, B. Garrido, M. Helm, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 123104 (2014)
https://doi.org/10.1063/1.4896588
Published: September 2014
View articletitled, The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments
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Journal Articles

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

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J. M. Ramírez, S. Cueff, Y. Berencén, C. Labbé, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 083103 (2014)
https://doi.org/10.1063/1.4893706
Published: August 2014
View articletitled, Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm
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Journal Articles

The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures

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H. M. Przewlocki, T. Gutt, K. Piskorski
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 204510 (2014)
https://doi.org/10.1063/1.4880399
Published: May 2014
View articletitled, The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures
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Journal Articles

Photoassisted electron emission from metal-oxide-semiconductor cathodes based on nanocrystalline silicon

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H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, M. Takai
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 153705 (2013)
https://doi.org/10.1063/1.4801887
Published: April 2013
View articletitled, Photoassisted electron emission from metal-oxide-semiconductor cathodes based on nanocrystalline silicon
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Journal Articles

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

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É. O’Connor, K. Cherkaoui, S. Monaghan, D. O’Connell, I. Povey, P. Casey, S. B. Newcomb, Y. Y. Gomeniuk, G. Provenzano, F. Crupi, G. Hughes, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 124104 (2012)
https://doi.org/10.1063/1.4729331
Published: June 2012
View articletitled, Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
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Journal Articles

Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems

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I. Humer, H. P. Huber, F. Kienberger, J. Danzberger, J. Smoliner
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 074313 (2012)
https://doi.org/10.1063/1.3702580
Published: April 2012
View articletitled, Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems
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Journal Articles

Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions

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D. Suzuki, M. Natsui, T. Endoh, H. Ohno, T. Hanyu
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 111, 07E318 (2012)
https://doi.org/10.1063/1.3672411
Published: February 2012
View articletitled, Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions
Open the PDF for Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions in another window
Journal Articles

Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition

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Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 084504 (2011)
https://doi.org/10.1063/1.3651400
Published: October 2011
View articletitled, Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition
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