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Journal Articles

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Bingyan Zhu, Wanting Yang, Yuhui Deng, Qiong Yang, Jie Jiang, Limei Jiang

J. Appl. Phys. 135, 114102 (2024)

https://doi.org/10.1063/5.0190068

Published: March 2024

View article titled, Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Journal Articles

Modulating the ferromagnetism of Fe₃GeTe₂ with 3d transition metal adsorption and strain-engineering

Miaojia Yuan, Zesen Lei, Lei Zhao, Ruishan Tan, Meng Guo, Tao Jing, Qilong Sun

J. Appl. Phys. 134, 213903 (2023)

https://doi.org/10.1063/5.0169727

Published: December 2023

View article titled, Modulating the ferromagnetism of Fe3GeTe2 with 3d transition metal adsorption and strain-engineering

Journal Articles

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Philipp Hans, Cristian Mocuta, Yannick Le-Friec, Philippe Boivin, Roberto Simola, Olivier Thomas

J. Appl. Phys. 134, 105102 (2023)

https://doi.org/10.1063/5.0157506

Published: September 2023

View article titled, Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Includes: Supplementary data

Journal Articles

Abnormal topological domains in a high-density array of ferroelectric nanodots

Zhongwen Li, Rui Bo, Hui Shen, Yi Lin, Guang Song, Yanzong Wang, Guannan Li, Feng Nan, Chao Wang, Yangjiang Wu, Zhengzhong Zhang, Hao Liu

J. Appl. Phys. 133, 094102 (2023)

https://doi.org/10.1063/5.0119239

Published: March 2023

View article titled, Abnormal topological domains in a high-density array of ferroelectric nanodots

Journal Articles

Insights into nonvolatile resistive switching in monolayer hexagonal boron nitride

Sanchali Mitra, Santanu Mahapatra

J. Appl. Phys. 132, 224302 (2022)

https://doi.org/10.1063/5.0128682

Published: December 2022

View article titled, Insights into nonvolatile resistive switching in monolayer hexagonal boron nitride

Includes: Supplementary data

Journal Articles

Spontaneous exchange bias and large dielectric constant in Bi_0.8Tb_0.2Fe_0.8Mn_0.2O₃ multiferroic

Seema Kumari, Khyati Anand, Mohd Alam, Labanya Ghosh, Swayangsiddha Ghosh, Prince Gupta, Rahul Singh, A. K. Jain, S. M. Yusuf, Anup K. Ghosh, Anita Mohan, Sandip Chatterjee

J. Appl. Phys. 132, 183909 (2022)

https://doi.org/10.1063/5.0106110

Published: November 2022

View article titled, Spontaneous exchange bias and large dielectric constant in Bi0.8Tb0.2Fe0.8Mn0.2O3 multiferroic

Journal Articles

Use of combined linear and nonlinear formalisms applied to the transport of protons and secondary electrons in a Monte Carlo code: Applications for space missions

P. Caron, C. Inguimbert, Q. Gibaru, M. Pinson

J. Appl. Phys. 132, 145103 (2022)

https://doi.org/10.1063/5.0112501

Published: October 2022

View article titled, Use of combined linear and nonlinear formalisms applied to the transport of protons and secondary electrons in a Monte Carlo code: Applications for space missions

Journal Articles

Tailoring skyrmion motion dynamics via magnetoelectric coupling: Toward highly energy-efficient and reliable non-volatile memory applications

Xuefeng Zhao, Di Wang, Hao Zhang, Long Liu, Huai Lin, Ziwei Wang, Xueying Zhang, Changqing Xie, Weinan Lin, Nan Gao, Cheng Pan, Guozhong Xing

J. Appl. Phys. 132, 084902 (2022)

https://doi.org/10.1063/5.0103237

Published: August 2022

View article titled, Tailoring skyrmion motion dynamics via magnetoelectric coupling: Toward highly energy-efficient and reliable non-volatile memory applications

Includes: Supplementary data

Journal Articles

The role of momentum conservation on the tunneling between a two-dimensional electron gas and self-assembled quantum dots

Daming Zhou, Jens Kerski, Andreas Beckel, Martin Geller, Axel Lorke, Arne Ludwig, Andreas D. Wieck, Xiaoshuang Chen, Wei Lu

J. Appl. Phys. 132, 064401 (2022)

https://doi.org/10.1063/5.0098561

Published: August 2022

View article titled, The role of momentum conservation on the tunneling between a two-dimensional electron gas and self-assembled quantum dots

Journal Articles

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Dongqi Zheng, Mengwei Si, Sou-Chi Chang, Nazila Haratipour, Zhizhong Chen, Adam Charnas, Shouyuan Huang, Kang Wang, Letian Dou, Xianfan Xu, Uygar E. Avci, Peide D. Ye

J. Appl. Phys. 132, 054101 (2022)

https://doi.org/10.1063/5.0098827

Published: August 2022

View article titled, Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Includes: Supplementary data

Journal Articles

Unraveling the optical bandgap and local structural change during phase transition in In₃SbTe₂ material through UV–Vis–NIR and XPS studies

Anushmita Pathak, Shivendra Kumar Pandey

J. Appl. Phys. 131, 205305 (2022)

https://doi.org/10.1063/5.0089399

Published: May 2022

View article titled, Unraveling the optical bandgap and local structural change during phase transition in In3SbTe2 material through UV–Vis–NIR and XPS studies

Journal Articles

Room temperature magnetic field modulation of diode-like behavior in Ca-doped BiFeO₃ thin films

Lei Wu, Juanfei Li, Chunhui Dong, Xiaoqiang Wang, Jinsheng Li, Mingya Li

J. Appl. Phys. 131, 145104 (2022)

https://doi.org/10.1063/5.0084403

Published: April 2022

View article titled, Room temperature magnetic field modulation of diode-like behavior in Ca-doped BiFeO3 thin films

Includes: Supplementary data

Journal Articles

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick, Amit Agarwal

J. Appl. Phys. 131, 034101 (2022)

https://doi.org/10.1063/5.0072124

Published: January 2022

View article titled, Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Includes: Supplementary data

Journal Articles

Temperature lag with the onset of exchange bias, superparamagnetic blocking, and antiferromagnetic ordering in ultrathin ferromagnet/antiferromagnet thin film

Yu Shiratsuchi, Yiran Tao, Rou Tsutsumi, Kentaro Toyoki, Ryoichi Nakatani

J. Appl. Phys. 130, 193902 (2021)

https://doi.org/10.1063/5.0060606

Published: November 2021

View article titled, Temperature lag with the onset of exchange bias, superparamagnetic blocking, and antiferromagnetic ordering in ultrathin ferromagnet/antiferromagnet thin film

Journal Articles

Solid-state electrochemical redox control of the optoelectronic properties for SrFeO_x thin films

Qian Yang, Hai Jun Cho, Hyoungjeen Jeen, Hiromichi Ohta

J. Appl. Phys. 129, 215303 (2021)

https://doi.org/10.1063/5.0053939

Published: June 2021

View article titled, Solid-state electrochemical redox control of the optoelectronic properties for SrFeOx thin films

Includes: Supplementary data

Journal Articles

The use of photothermal techniques for thermal conductivity and thermal boundary resistance measurements of phase-change chalcogenides alloys

Jean-Luc Battaglia, Andrzej Kusiak, Kanka Ghosh

J. Appl. Phys. 129, 055106 (2021)

https://doi.org/10.1063/5.0020983

Published: February 2021

View article titled, The use of photothermal techniques for thermal conductivity and thermal boundary resistance measurements of phase-change chalcogenides alloys

Journal Articles

Experimental and theoretical study of capacitive memory of metal-oxide-semiconductor devices based on Er-doped In₂O₃ nano-column arrays

Anupam Ghosh, Rini Lahiri, Shyam Murli Manohar Dhar Dwivedi, Aniruddha Mondal

J. Appl. Phys. 128, 095704 (2020)

https://doi.org/10.1063/5.0013904

Published: September 2020

View article titled, Experimental and theoretical study of capacitive memory of metal-oxide-semiconductor devices based on Er-doped In2O3 nano-column arrays

Journal Articles

Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots

A. Meo, R. Chepulskyy, D. Apalkov, R. W. Chantrell, R. F. L. Evans

J. Appl. Phys. 128, 073905 (2020)

https://doi.org/10.1063/5.0018909

Published: August 2020

View article titled, Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots

Journal Articles

Integration of fluorographene trapping medium in MoS₂-based nonvolatile memory device

Kai Ping Chang, Haneen Abushammala, Mamina Sahoo, Alexandre Jaffre, David Alamarguy, Yu Jiang, Mohamed Boutchich, Chao-Sung Lai

J. Appl. Phys. 127, 245106 (2020)

https://doi.org/10.1063/1.5126793

Published: June 2020

View article titled, Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device

Includes: Supplementary data

Journal Articles

Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO₂ _– _x/TiO₂ _– _y-based bilayer structures

D. Sakellaropoulos, P. Bousoulas, D. Tsoukalas

J. Appl. Phys. 126, 044501 (2019)

https://doi.org/10.1063/1.5094242

Published: July 2019

View article titled, Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2 – x/TiO2 – y-based bilayer structures

NARROW

Topics

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Modulating the ferromagnetism of Fe₃GeTe₂ with 3d transition metal adsorption and strain-engineering

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Abnormal topological domains in a high-density array of ferroelectric nanodots

Insights into nonvolatile resistive switching in monolayer hexagonal boron nitride

Spontaneous exchange bias and large dielectric constant in Bi_0.8Tb_0.2Fe_0.8Mn_0.2O₃ multiferroic

Use of combined linear and nonlinear formalisms applied to the transport of protons and secondary electrons in a Monte Carlo code: Applications for space missions

Tailoring skyrmion motion dynamics via magnetoelectric coupling: Toward highly energy-efficient and reliable non-volatile memory applications

The role of momentum conservation on the tunneling between a two-dimensional electron gas and self-assembled quantum dots

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions

Unraveling the optical bandgap and local structural change during phase transition in In₃SbTe₂ material through UV–Vis–NIR and XPS studies

Room temperature magnetic field modulation of diode-like behavior in Ca-doped BiFeO₃ thin films

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

Temperature lag with the onset of exchange bias, superparamagnetic blocking, and antiferromagnetic ordering in ultrathin ferromagnet/antiferromagnet thin film

Solid-state electrochemical redox control of the optoelectronic properties for SrFeO_x thin films

The use of photothermal techniques for thermal conductivity and thermal boundary resistance measurements of phase-change chalcogenides alloys

Experimental and theoretical study of capacitive memory of metal-oxide-semiconductor devices based on Er-doped In₂O₃ nano-column arrays

Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots

Integration of fluorographene trapping medium in MoS₂-based nonvolatile memory device

Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO₂ _– _x/TiO₂ _– _y-based bilayer structures

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