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Journal Articles

Ferroelastic strain control of multiple nonvolatile resistance tuning in Cr:In₂O₃/PMN-PT(111) multiferroic heterostructures

Hao Ni, Yuying Yuan, Qiang Fu, Chen Zhang, Lefan Liu, Deliang Cheng, Shuyi Sun

J. Appl. Phys. 136, 045303 (2024)

https://doi.org/10.1063/5.0220844

Published: July 2024

View article titled, Ferroelastic strain control of multiple nonvolatile resistance tuning in Cr:In2O3/PMN-PT(111) multiferroic heterostructures

Journal Articles

Influence of local structures on amorphous alumina exhibiting resistance random-access memory function

Masato Kubota, Seiichi Kato

J. Appl. Phys. 136, 025102 (2024)

https://doi.org/10.1063/5.0208486

Published: July 2024

View article titled, Influence of local structures on amorphous alumina exhibiting resistance random-access memory function

Journal Articles

Thermal optimization of two-terminal SOT-MRAM

Haotian Su, Heungdong Kwon, William Hwang, Fen Xue, Çağıl Köroğlu, Wilman Tsai, Mehdi Asheghi, Kenneth E. Goodson, Shan X. Wang, Eric Pop

J. Appl. Phys. 136, 013901 (2024)

https://doi.org/10.1063/5.0211620

Published: July 2024

View article titled, Thermal optimization of two-terminal SOT-MRAM

Journal Articles

Crystallization dynamics probed by transient resistance in phase change memory cells

Efrat Ordan, Rivka-Galya Nir-Harwood, Mor M. Dahan, Yair Keller, Eilam Yalon

J. Appl. Phys. 135, 205703 (2024)

https://doi.org/10.1063/5.0202152

Published: May 2024

View article titled, Crystallization dynamics probed by transient resistance in phase change memory cells

Journal Articles

Skyrmionium dynamics on a racetrack in the presence of a magnetic defect

H. Vigo-Cotrina, S. Navarro-Vilca, S. Urcia-Romero

J. Appl. Phys. 135, 163903 (2024)

https://doi.org/10.1063/5.0207827

Published: April 2024

View article titled, Skyrmionium dynamics on a racetrack in the presence of a magnetic defect

Journal Articles

Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu

J. Appl. Phys. 135, 145704 (2024)

https://doi.org/10.1063/5.0198244

Published: April 2024

View article titled, Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Journal Articles

Photoinduced growth of the crystalline phase of tellurium on a 1T′-MoTe₂ matrix

Paulo Victor Sciammarella, Matheus Almeida de Souza, Luciano de Moura Guimarães, Maria Ivonete Nogueira da Silva, Juan Carlos González Pérez, Leandro Gutierrez Rizzi, Eduardo Nery Duarte Araujo

J. Appl. Phys. 135, 025302 (2024)

https://doi.org/10.1063/5.0152814

Published: January 2024

View article titled, Photoinduced growth of the crystalline phase of tellurium on a 1T′-MoTe2 matrix

Journal Articles

Atomic and electronic origin of robust off-state insulation properties in Al-rich Al_xTe_y glass for ovonic threshold switching applications

Xiao-Dong Li, Maoan Tian, Bai-Qian Wang, Nian-Ke Chen, Xian-Bin Li

J. Appl. Phys. 134, 204502 (2023)

https://doi.org/10.1063/5.0168408

Published: November 2023

View article titled, Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications

Includes: Supplementary data

Journal Articles

In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials

Ruijuan Qi, Jinzhong Zhang, Fengrui Sui, Sannian Song, Xi Li, Zhitang Song

J. Appl. Phys. 134, 205702 (2023)

https://doi.org/10.1063/5.0179391

Published: November 2023

View article titled, In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials

Includes: Supplementary data

Journal Articles

Ga doping induced thermal stabilization of fcc phase in Ge₂Sb₂Te₅ thin films: A step toward power-efficient phase change memories

Neeru Bala, Manju, U. K. Goutam, Anup Thakur

J. Appl. Phys. 134, 135301 (2023)

https://doi.org/10.1063/5.0167336

Published: October 2023

View article titled, Ga doping induced thermal stabilization of fcc phase in Ge2Sb2Te5 thin films: A step toward power-efficient phase change memories

Journal Articles

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

H. Alex Hsain, Younghwan Lee, Patrick D. Lomenzo, Ruben Alcala, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N. Parsons, Jacob L. Jones

J. Appl. Phys. 133, 225304 (2023)

https://doi.org/10.1063/5.0147124

Published: June 2023

View article titled, Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Includes: Supplementary data

Journal Articles

Wake up and retention in zinc magnesium oxide ferroelectric films

Leonard Jacques, Gyunghyun Ryu, Devin Goodling, Saiphaneendra Bachu, Rojin Taheri, Pedram Yousefian, Smitha Shetty, Betul Akkopru-Akgun, Clive Randall, Nasim Alem, Jon-Paul Maria, Susan Trolier-McKinstry

J. Appl. Phys. 133, 224102 (2023)

https://doi.org/10.1063/5.0153750

Published: June 2023

View article titled, Wake up and retention in zinc magnesium oxide ferroelectric films

Includes: Supplementary data

Journal Articles

Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Clément Chassain, Andrzej Kusiak, Cécile Gaborieau, Yannick Anguy, Nguyet-Phuong Tran, Chiara Sabbione, Marie-Claire Cyrille, Claudia Wiemer, Alessio Lamperti, Jean-Luc Battaglia

J. Appl. Phys. 133, 225102 (2023)

https://doi.org/10.1063/5.0152049

Published: June 2023

View article titled, Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Journal Articles

Suppression of skyrmion Hall effect via standing surface acoustic waves in hybrid ferroelectric/ferromagnetic heterostructures

Chao Chen, Dahai Wei, Liang Sun, Na Lei

J. Appl. Phys. 133, 203904 (2023)

https://doi.org/10.1063/5.0142206

Published: May 2023

View article titled, Suppression of skyrmion Hall effect via standing surface acoustic waves in hybrid ferroelectric/ferromagnetic heterostructures

Includes: Supplementary data

Journal Articles

Doped HfO₂-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

Bao Zhang, Peizhen Hong, Jingwen Hou, Zongliang Huo, Tianchun Ye

J. Appl. Phys. 133, 164103 (2023)

https://doi.org/10.1063/5.0141082

Published: April 2023

View article titled, Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

Includes: Supplementary data

Journal Articles

Balance between thermal stability and operation speed realized by Ti gradient doping in Sb₂Te₃ phase-change memory

Yuntao Zeng, Xiangjun Liu, Ming Xu, Xiaomin Cheng, Xiangshui Miao

J. Appl. Phys. 133, 164501 (2023)

https://doi.org/10.1063/5.0144241

Published: April 2023

View article titled, Balance between thermal stability and operation speed realized by Ti gradient doping in Sb2Te3 phase-change memory

Includes: Supplementary data

Journal Articles

Inversion symmetry breaking in spin–orbit torque-induced magnetization switching to improve the recording density of multi-level magnetoresistive random-access memory

Uraku Kamihoki, Yuichiro Kurokawa, Masahiro Fujimoto, Hiromi Yuasa

J. Appl. Phys. 133, 143902 (2023)

https://doi.org/10.1063/5.0131540

Published: April 2023

View article titled, Inversion symmetry breaking in spin–orbit torque-induced magnetization switching to improve the recording density of multi-level magnetoresistive random-access memory

Journal Articles

Temperature-dependent thermal conductivity of Ge₂Sb₂Te₅ polymorphs from 80 to 500 K

Qinshu Li, Or Levit, Eilam Yalon, Bo Sun

J. Appl. Phys. 133, 135105 (2023)

https://doi.org/10.1063/5.0142536

Published: April 2023

View article titled, Temperature-dependent thermal conductivity of Ge2Sb2Te5 polymorphs from 80 to 500 K

Journal Articles

2D Piezoelectrics, pyroelectrics, and ferroelectrics

Wenjuan Zhu, Xia Hong, Peide D. Ye, Yi Gu

J. Appl. Phys. 133, 120402 (2023)

https://doi.org/10.1063/5.0149661

Published: March 2023

View article titled, 2D Piezoelectrics, pyroelectrics, and ferroelectrics

Journal Articles

Growth dominated crystallization of GeTe mushroom cells during partial SET operation

Yiqi Yu, Marek Skowronski

J. Appl. Phys. 133, 044501 (2023)

https://doi.org/10.1063/5.0129023

Published: January 2023

View article titled, Growth dominated crystallization of GeTe mushroom cells during partial SET operation

Includes: Supplementary data

NARROW

Topics

Ferroelastic strain control of multiple nonvolatile resistance tuning in Cr:In₂O₃/PMN-PT(111) multiferroic heterostructures

Influence of local structures on amorphous alumina exhibiting resistance random-access memory function

Thermal optimization of two-terminal SOT-MRAM

Crystallization dynamics probed by transient resistance in phase change memory cells

Skyrmionium dynamics on a racetrack in the presence of a magnetic defect

Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Photoinduced growth of the crystalline phase of tellurium on a 1T′-MoTe₂ matrix

Atomic and electronic origin of robust off-state insulation properties in Al-rich Al_xTe_y glass for ovonic threshold switching applications

In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials

Ga doping induced thermal stabilization of fcc phase in Ge₂Sb₂Te₅ thin films: A step toward power-efficient phase change memories

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

Wake up and retention in zinc magnesium oxide ferroelectric films

Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Suppression of skyrmion Hall effect via standing surface acoustic waves in hybrid ferroelectric/ferromagnetic heterostructures

Doped HfO₂-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET

Balance between thermal stability and operation speed realized by Ti gradient doping in Sb₂Te₃ phase-change memory

Inversion symmetry breaking in spin–orbit torque-induced magnetization switching to improve the recording density of multi-level magnetoresistive random-access memory

Temperature-dependent thermal conductivity of Ge₂Sb₂Te₅ polymorphs from 80 to 500 K

2D Piezoelectrics, pyroelectrics, and ferroelectrics

Growth dominated crystallization of GeTe mushroom cells during partial SET operation

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