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Journal Articles

Enhancing up-conversion luminescence in Yb/Er co-doped CsPbCl₃ single crystals

T. M. Muzyka, A. S. Pushak, Y. M. Furgala, S. Z. Malynych, I. E. Moroz, A. Kotlov, T. M. Demkiv, A. S. Voloshinovskii, R. V. Gamernyk

J. Appl. Phys. 136, 215103 (2024)

https://doi.org/10.1063/5.0232266

Published: December 2024

View article titled, Enhancing up-conversion luminescence in Yb/Er co-doped CsPbCl3 single crystals

Journal Articles

High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Matthieu Lafossas, Simona Torrengo, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley, Yvon Cordier, Matthew Charles

J. Appl. Phys. 136, 175705 (2024)

https://doi.org/10.1063/5.0228976

Published: November 2024

View article titled, High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

Journal Articles

N-doping strategy for enhancing the adsorption performance of Ti₂CT₂ MXene for Sr ion

Sifan Li, Yujuan Zhang, Kaikai Qiu, Yu Zhang, Jingyuan Jin, Weiqun Shi

J. Appl. Phys. 136, 164302 (2024)

https://doi.org/10.1063/5.0229938

Published: October 2024

View article titled, N-doping strategy for enhancing the adsorption performance of Ti2CT2 MXene for Sr ion

Journal Articles

The novel impedance matching device realized by the structure of air-gap ring based on the doping method at microwave frequency

Lin Zhao, Jiaxin Li, Li Pan

J. Appl. Phys. 136, 113102 (2024)

https://doi.org/10.1063/5.0230486

Published: September 2024

View article titled, The novel impedance matching device realized by the structure of air-gap ring based on the doping method at microwave frequency

Journal Articles

Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Dongseong Yang, Yina Moon, Nara Han, Minwoo Lee, Jeongwoo Beak, Geon Chang Song, Seung-Hoon Lee, Dong-Yu Kim

J. Appl. Phys. 136, 045701 (2024)

https://doi.org/10.1063/5.0203757

Published: July 2024

View article titled, Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Journal Articles

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n⁺ epitaxial wafer

Shenzhong Li, Tong Zhao, Defan Wu, Xingbo Liang, Hao Chen, Qunlin Nie, Daxi Tian, Xiangyang Ma, Deren Yang

J. Appl. Phys. 135, 235704 (2024)

https://doi.org/10.1063/5.0202400

Published: June 2024

View article titled, Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer

Journal Articles

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Fabio Isa, Javier A. Schmidt, Stefano Aghion, Enrico Napolitani, Giovanni Isella, Rafael Ferragut

J. Appl. Phys. 135, 165704 (2024)

https://doi.org/10.1063/5.0179101

Published: April 2024

View article titled, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Journal Articles

Analytical model of a nanowire-based betavoltaic device

Amanda Thomas, Ray R. LaPierre

J. Appl. Phys. 135, 134302 (2024)

https://doi.org/10.1063/5.0202949

Published: April 2024

View article titled, Analytical model of a nanowire-based betavoltaic device

Journal Articles

Superparamagnetic properties of metal-free nitrogen-doped graphene quantum dots

Muhammad Shehzad Sultan, Vladimir I. Makarov, Frank Mendoza, Muhammad Sajjad, Danilo G. Barrionuevo Diestra, Flavia P. N. Inbanathan, Eli Skelton, Uvinduni I. Premadasa, Katherine Leslee A. Cimatu, Khaled Habiba, Wojciech M. Jadwisienczak, Brad R. Weiner, Gerardo Morell

J. Appl. Phys. 135, 083904 (2024)

https://doi.org/10.1063/5.0173931

Published: February 2024

View article titled, Superparamagnetic properties of metal-free nitrogen-doped graphene quantum dots

Journal Articles

Effect of Zn/Si ratio on conversion luminescent properties of Er³⁺/Yb³⁺ co-doped oxyfluoride glasses used for solar cells

Ziyou Zhou, Zhiwei Luo, Juxia Tong, Haozhang Liang, Anxian Lu

J. Appl. Phys. 135, 083102 (2024)

https://doi.org/10.1063/5.0179516

Published: February 2024

View article titled, Effect of Zn/Si ratio on conversion luminescent properties of Er3+/Yb3+ co-doped oxyfluoride glasses used for solar cells

Journal Articles

Erratum: “Design principles for achieving red emission in Eu²⁺/Eu³⁺ doped inorganic solids” [J. Appl. Phys. 129, 200903 (2021)]

Jianwei Qiao, Zhiguo Xia

J. Appl. Phys. 135, 029902 (2024)

https://doi.org/10.1063/5.0194774

Published: January 2024

View article titled, Erratum: “Design principles for achieving red emission in Eu2+/Eu3+ doped inorganic solids” [J. Appl. Phys. 129, 200903 (2021)]

Journal Articles

Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature

J. Guise, H. Ratovo, M. Thual, P. Fehlen, F. Gonzalez-Posada Flores, J.-B. Rodriguez, L. Cerutti, E. Centeno, S. Blin, T. Taliercio

J. Appl. Phys. 134, 165701 (2023)

https://doi.org/10.1063/5.0167272

Published: October 2023

View article titled, Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature

Journal Articles

Publisher’s note: “Structural evaluation in vicinity of composition induced non-ergodic to ergodic crossover in niobium doped (Na_0.41K_0.09Bi_0.5)TiO₃” [J. Appl. Phys. 134 , 044105 (2023)]

Ankur Sharma, Pinki Yadav, Indranil Bhaumik, M. N. Singh, Vasant Sathe, Gurvinderjit Singh

J. Appl. Phys. 134, 099901 (2023)

https://doi.org/10.1063/5.0173739

Published: September 2023

View article titled, Publisher’s note: “Structural evaluation in vicinity of composition induced non-ergodic to ergodic crossover in niobium doped (Na0.41K0.09Bi0.5)TiO3” [J. Appl. Phys. 134 , 044105 (2023)]

Journal Articles

Significantly improved triethylamine sensing performance and mechanism of tin oxide by doping Pd: Experimental and DFT studies

Gaojie Li, Linqi Zhang, Kai Du, Xinxin Wang, Menghao Yin

J. Appl. Phys. 134, 084502 (2023)

https://doi.org/10.1063/5.0161984

Published: August 2023

View article titled, Significantly improved triethylamine sensing performance and mechanism of tin oxide by doping Pd: Experimental and DFT studies

Journal Articles

Optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As determined by variable-angle spectroscopic ellipsometry

D. Quispe, B. Eng, M. Kim, A. L. Onno, B. J. Coppa, Z. J. Yu, M. L. Lee, Z. C. Holman

J. Appl. Phys. 134, 073104 (2023)

https://doi.org/10.1063/5.0155214

Published: August 2023

View article titled, Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry

Includes: Supplementary data

Journal Articles

Classes of O–D centers in unintentionally and Fe-doped β-Ga₂O₃ annealed in a D₂ ambient

Amanda Portoff, Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan Glaser, Stephen J. Pearton

J. Appl. Phys. 134, 045701 (2023)

https://doi.org/10.1063/5.0160331

Published: July 2023

View article titled, Classes of O–D centers in unintentionally and Fe-doped β-Ga2O3 annealed in a D2 ambient

Includes: Supplementary data

Journal Articles

Erratum: “Origin of irreversible to reversible transition in acetone detection for Y-doped BiFeO₃ perovskite” [J. Appl. Phys. 128, 144501 (2020)]

S. Neogi, R. Ghosh

J. Appl. Phys. 133, 229901 (2023)

https://doi.org/10.1063/5.0159249

Published: June 2023

View article titled, Erratum: “Origin of irreversible to reversible transition in acetone detection for Y-doped BiFeO3 perovskite” [J. Appl. Phys. 128, 144501 (2020)]

Journal Articles

Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Clément Chassain, Andrzej Kusiak, Cécile Gaborieau, Yannick Anguy, Nguyet-Phuong Tran, Chiara Sabbione, Marie-Claire Cyrille, Claudia Wiemer, Alessio Lamperti, Jean-Luc Battaglia

J. Appl. Phys. 133, 225102 (2023)

https://doi.org/10.1063/5.0152049

Published: June 2023

View article titled, Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Journal Articles

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Jesse M. Brown, Saurabh Vishwakarma, David J. Smith, Robert J. Nemanich

J. Appl. Phys. 133, 215303 (2023)

https://doi.org/10.1063/5.0145771

Published: June 2023

View article titled, Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Journal Articles

Balance between thermal stability and operation speed realized by Ti gradient doping in Sb₂Te₃ phase-change memory

Yuntao Zeng, Xiangjun Liu, Ming Xu, Xiaomin Cheng, Xiangshui Miao

J. Appl. Phys. 133, 164501 (2023)

https://doi.org/10.1063/5.0144241

Published: April 2023

View article titled, Balance between thermal stability and operation speed realized by Ti gradient doping in Sb2Te3 phase-change memory

Includes: Supplementary data

NARROW

Topics

Enhancing up-conversion luminescence in Yb/Er co-doped CsPbCl₃ single crystals

High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon

N-doping strategy for enhancing the adsorption performance of Ti₂CT₂ MXene for Sr ion

The novel impedance matching device realized by the structure of air-gap ring based on the doping method at microwave frequency

Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n⁺ epitaxial wafer

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Analytical model of a nanowire-based betavoltaic device

Superparamagnetic properties of metal-free nitrogen-doped graphene quantum dots

Effect of Zn/Si ratio on conversion luminescent properties of Er³⁺/Yb³⁺ co-doped oxyfluoride glasses used for solar cells

Erratum: “Design principles for achieving red emission in Eu²⁺/Eu³⁺ doped inorganic solids” [J. Appl. Phys. 129, 200903 (2021)]

Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature

Publisher’s note: “Structural evaluation in vicinity of composition induced non-ergodic to ergodic crossover in niobium doped (Na_0.41K_0.09Bi_0.5)TiO₃” [J. Appl. Phys. 134 , 044105 (2023)]

Significantly improved triethylamine sensing performance and mechanism of tin oxide by doping Pd: Experimental and DFT studies

Optical constants of polycrystalline Al_0.25Ga_0.75P and Al_0.9Ga_0.1As determined by variable-angle spectroscopic ellipsometry

Classes of O–D centers in unintentionally and Fe-doped β-Ga₂O₃ annealed in a D₂ ambient

Erratum: “Origin of irreversible to reversible transition in acetone detection for Y-doped BiFeO₃ perovskite” [J. Appl. Phys. 128, 144501 (2020)]

Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Balance between thermal stability and operation speed realized by Ti gradient doping in Sb₂Te₃ phase-change memory

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