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Journal Articles

Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction

Open Access
T. Saquib, F. Akyol, H. Ozden, N. Somaiah, J. Sahoo, R. Muralidharan, D. N. Nath
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 065701 (2024)
https://doi.org/10.1063/5.0188055
Published: February 2024
View articletitled, Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction
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Journal Articles

MoS2|ZnO isotype heterostructure diode: Carrier transport and band alignment

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Shikha Srivastava, Yashowanta N. Mohapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 205702 (2021)
https://doi.org/10.1063/5.0048592
Published: May 2021
View articletitled, MoS2|ZnO isotype heterostructure diode: Carrier transport and band alignment
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Journal Articles

Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy

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Weijiang Li, Xiang Zhang, Jie Zhao, Jianchang Yan, Zhiqiang Liu, Junxi Wang, Jinmin Li, Tongbo Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 015302 (2020)
https://doi.org/10.1063/1.5125978
Published: January 2020
View articletitled, Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy
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Journal Articles

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

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Xiushi Huang, Zhaomeng Gao, Pei Li, Longfei Wang, Xiansheng Liu, Weifeng Zhang, Haizhong Guo
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 084502 (2018)
https://doi.org/10.1063/1.5018772
Published: February 2018
View articletitled, Resistance change effect in SrTiO3/Si (001) isotype heterojunction
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Includes: Supplementary data
Journal Articles

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

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M. N. Fireman, Haoran Li, Stacia Keller, Umesh K. Mishra, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 205702 (2017)
https://doi.org/10.1063/1.4983767
Published: May 2017
View articletitled, Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy
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Journal Articles

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

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Micha N. Fireman, David A. Browne, Umesh K. Mishra, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 055709 (2016)
https://doi.org/10.1063/1.4941323
Published: February 2016
View articletitled, Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy
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Journal Articles

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

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Greeshma Chandan, Shruti Mukundan, Lokesh Mohan, Basanta Roul, S. B. Krupanidhi
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 024503 (2015)
https://doi.org/10.1063/1.4926480
Published: July 2015
View articletitled, Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias
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Journal Articles

Electrical characterization and modelling of n–n Ge-Si heterojunctions with relatively low interface state densities

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R. Peibst, E. P. Rugeramigabo, K. R. Hofmann
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 124502 (2012)
https://doi.org/10.1063/1.4768255
Published: December 2012
View articletitled, Electrical characterization and modelling of n–n Ge-Si heterojunctions with relatively low interface state densities
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Journal Articles

Competition between the barrier and injection mechanisms of nonlinearity of the current-voltage characteristic in Mott-barrier detector diodes

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V. I. Shashkin, N. V. Vostokov
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 043702 (2009)
https://doi.org/10.1063/1.3194791
Published: August 2009
View articletitled, Competition between the barrier and injection mechanisms of nonlinearity of the current-voltage characteristic in Mott-barrier detector diodes
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Journal Articles

A high-energy inelastic neutron scattering investigation of the Gd–Co exchange interactions in Gd Co 4 B : Comparison with density-functional calculations

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Olivier Isnard, Michael D. Kuz’min, Manuel Richter, Michael Loewenhaupt, Robert Bewley
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 013922 (2008)
https://doi.org/10.1063/1.2953099
Published: July 2008
View articletitled, A high-energy inelastic neutron scattering investigation of the Gd–Co exchange interactions in Gd Co 4 B : Comparison with density-functional calculations
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Journal Articles

Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer

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G. J. Przybylek, C. L. Reynolds,, Jr., F. S. Walters
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 5788–5791 (2004)
https://doi.org/10.1063/1.1801160
Published: November 2004
View articletitled, Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer
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Journal Articles

Comment on “Schottky diodes with a δ-doped near-surface layer” [J. Appl. Phys. 90 , 6205 (2001)]

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V. Shashkin, A. Murel
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 2190–2191 (2004)
https://doi.org/10.1063/1.1637722
Published: February 2004
View articletitled, Comment on “Schottky diodes with a δ-doped near-surface layer” [J. Appl. Phys. 90 , 6205 (2001)]
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Journal Articles

Interface photoluminescence in type II broken-gap P–Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p- InAs single heterostructures

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K. D. Moiseev, A. Krier, Yu. P. Yakovlev
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 3988–3992 (2001)
https://doi.org/10.1063/1.1402968
Published: October 2001
View articletitled, Interface photoluminescence in type II broken-gap P–Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p- InAs single heterostructures
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Journal Articles

ZnSe/GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements

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A. Souifi, R. Adhiri, R. Le Dantec, G. Guillot, P. Uusimaa, A. Rinta-Möykky, M. Pessa
Journal: Journal of Applied Physics
J. Appl. Phys. 85, 7759–7763 (1999)
https://doi.org/10.1063/1.370581
Published: June 1999
View articletitled, ZnSe/GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements
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Journal Articles

Measurement of band offsets and interface charges by the C–V matching method

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Y. Nemirovsky, G. Gordon, D. Goren
Journal: Journal of Applied Physics
J. Appl. Phys. 84, 1113–1120 (1998)
https://doi.org/10.1063/1.368111
Published: July 1998
View articletitled, Measurement of band offsets and interface charges by the C–V matching method
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Journal Articles

Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe /n -GaAs heterojunction

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Madan Niraula, Toru Aoki, Yoichiro Nakanishi, Yoshinori Hatanaka
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 2656–2661 (1998)
https://doi.org/10.1063/1.367028
Published: March 1998
View articletitled, Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe /n -GaAs heterojunction
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Journal Articles

Waveguides based on drift and diffusion

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K. Hayata, M. Koshiba
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 1808–1809 (1995)
https://doi.org/10.1063/1.358878
Published: February 1995
View articletitled, Waveguides based on drift and diffusion
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Journal Articles

Origin of recombination transitions at the lattice‐matched GaInAsSb‐GaSb n‐N type‐II heterojunctions

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E. Hulicius, J. Oswald, J. Pangrác, T. Šimeček, N. S. Bresler, V. N. Cheban, O. B. Gusev, A. N. Titkov
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 4189–4193 (1994)
https://doi.org/10.1063/1.356003
Published: April 1994
View articletitled, Origin of recombination transitions at the lattice‐matched GaInAsSb‐GaSb n‐N type‐II heterojunctions
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Journal Articles

Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy

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L. Vescan, R. Apetz, H. Lüth
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 7427–7430 (1993)
https://doi.org/10.1063/1.353984
Published: June 1993
View articletitled, Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy
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Journal Articles

Capacitance‐voltage profiling through graded heterojunctions: Theory and experiment

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M. Sundaram, A. C. Gossard
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 251–260 (1993)
https://doi.org/10.1063/1.353897
Published: January 1993
View articletitled, Capacitance‐voltage profiling through graded heterojunctions: Theory and experiment
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