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Journal Articles

Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys

Gongyi Hong, Alexander Chaney, Adam Charnas, Yunjo Kim, Thaddeus J. Asel, Adam T. Neal, Shin Mou
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245706 (2024)
https://doi.org/10.1063/5.0229570
Published: December 2024
View articletitled, Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys
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Journal Articles

Characterization of field emission from random nano-structured surface in using fractional field emission models

Samra Kanwal, Noreen Raheem, M. Q. Mehmood, M. Zubair, L. K. Ang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 073301 (2024)
https://doi.org/10.1063/5.0220388
Published: August 2024
View articletitled, Characterization of field emission from random nano-structured surface in using fractional field emission models
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Journal Articles

Erratum: “Structure formation on the surface of indium phosphide irradiated by femtosecond laser pulses” [J. Appl. Phys. 97, 013538 (2005)]

Dominik Kaczmarek, Thies Johannes Albert, Martin Munz, Heinz Sturm, Jörn Bonse
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 049903 (2024)
https://doi.org/10.1063/5.0222903
Published: July 2024
View articletitled, Erratum: “Structure formation on the surface of indium phosphide irradiated by femtosecond laser pulses” [J. Appl. Phys. 97, 013538 (2005)]
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Journal Articles

Atomistic wave packet investigation of phonon scattering at rough surfaces

Xuesong Zhang, Yan Wang, Dongqiang Lei, Zhifeng Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045102 (2024)
https://doi.org/10.1063/5.0214814
Published: July 2024
View articletitled, Atomistic wave packet investigation of phonon scattering at rough surfaces
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Journal Articles

Interface smoothing in short-period W/B4C multilayers using neon ion beam polishing

D. IJpes, A. E. Yakshin, J. M. Sturm, M. D. Ackermann
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 245303 (2023)
https://doi.org/10.1063/5.0175793
Published: December 2023
View articletitled, Interface smoothing in short-period W/B4C multilayers using neon ion beam polishing
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Journal Articles

Evidence of charged interface states limited scattering in GaN heterostructures

Indraneel Sanyal, Yu-Chih Chen, Chuan-Yue Yu, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085702 (2023)
https://doi.org/10.1063/5.0159380
Published: August 2023
View articletitled, Evidence of charged interface states limited scattering in GaN heterostructures
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Journal Articles

Sputter yields of surfaces with nanoscale textures: Analytical results and Monte Carlo simulations

R. Mark Bradley, Gerhard Hobler
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065303 (2023)
https://doi.org/10.1063/5.0137324
Published: February 2023
View articletitled, Sputter yields of surfaces with nanoscale textures: Analytical results and Monte Carlo simulations
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Journal Articles

Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials

H. J. Haugan, S. Elhamri, K. Mahalingam, D. Das, L. R. Ram-Mohan, R. G. Bedford, K. G. Eyink
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 024301 (2023)
https://doi.org/10.1063/5.0135914
Published: January 2023
View articletitled, Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials
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Journal Articles

High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Suman Das, Tamara Isaacs-Smith, Ayayi Ahyi, Marcelo A. Kuroda, Sarit Dhar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 225701 (2021)
https://doi.org/10.1063/5.0073523
Published: December 2021
View articletitled, High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
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Includes: Supplementary data
Journal Articles

Barrier height study of two-well resonant-phonon terahertz quantum cascade lasers. I. The third-order tunneling current theory

Teppei Miyoshi, Dayan Ban
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 183103 (2021)
https://doi.org/10.1063/5.0062447
Published: November 2021
View articletitled, Barrier height study of two-well resonant-phonon terahertz quantum cascade lasers. I. The third-order tunneling current theory
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Journal Articles

Interface roughness and interface roughness scattering in amorphous oxide thin-film transistors

Xiao Wang, Ananth Dodabalapur
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 145302 (2021)
https://doi.org/10.1063/5.0065088
Published: October 2021
View articletitled, Interface roughness and interface roughness scattering in amorphous oxide thin-film transistors
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Includes: Supplementary data
Journal Articles

Morphology evolution of the light trapping structure using atmospheric plasma textured c-Si wafer for silicon solar cells

Peng Zhang, Jie Wu, Hengxi Tian, Yuqing Dong, Deping Yu
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 023105 (2021)
https://doi.org/10.1063/5.0044508
Published: July 2021
View articletitled, Morphology evolution of the light trapping structure using atmospheric plasma textured c-Si wafer for silicon solar cells
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Journal Articles

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Editor’s Pick
Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu, Satoshi Moriyama, Jun-ichi Inoue, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 185707 (2020)
https://doi.org/10.1063/5.0001868
Published: May 2020
View articletitled, Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
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Journal Articles

Strain induced mobility enhancement in p-type silicon structures: Bulk and quantum well (quantum kinetic approach)

K. L. Kovalenko, S. I. Kozlovskiy, N. N. Sharan
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 082515 (2019)
https://doi.org/10.1063/1.5045620
Published: December 2018
View articletitled, Strain induced mobility enhancement in p-type silicon structures: Bulk and quantum well (quantum kinetic approach)
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Journal Articles

Effect of stacking faults and surface roughness on the thermal conductivity of InAs nanowires

Editor’s Pick
K. Vuttivorakulchai, M. Luisier, A. Schenk
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 205101 (2018)
https://doi.org/10.1063/1.5051677
Published: November 2018
View articletitled, Effect of stacking faults and surface roughness on the thermal conductivity of InAs nanowires
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Journal Articles

The intrinsic atomic-level surface roughness mobility limit of 4H-SiC

C. Darmody, N. Goldsman
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 105702 (2018)
https://doi.org/10.1063/1.5042765
Published: September 2018
View articletitled, The intrinsic atomic-level surface roughness mobility limit of 4H-SiC
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Journal Articles

The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

Gokula Kannan, Dragica Vasileska
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 114303 (2017)
https://doi.org/10.1063/1.5003253
Published: September 2017
View articletitled, The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs
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Journal Articles

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

D. Lizzit, O. Badami, R. Specogna, D. Esseni
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 245301 (2017)
https://doi.org/10.1063/1.4986644
Published: June 2017
View articletitled, Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme
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Journal Articles

Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations

Dax M. Crum, Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 224301 (2016)
https://doi.org/10.1063/1.4970913
Published: December 2016
View articletitled, Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations
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Journal Articles

A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistors

E. R. Hsieh, Steve S. Chung
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 204502 (2016)
https://doi.org/10.1063/1.4952987
Published: May 2016
View articletitled, A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistors
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