1-20 of 209
Lattice scattering
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

High electron mobility in heavily sulfur-doped 4H-SiC

FeaturedOpen Access
Mitsuaki Kaneko, Taiga Matsuoka, Tsunenobu Kimoto
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 205702 (2024)
https://doi.org/10.1063/5.0207833
Published: May 2024
View articletitled, High electron mobility in heavily sulfur-doped 4H-SiC
Open the PDF for High electron mobility in heavily sulfur-doped 4H-SiC in another window
Journal Articles

Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities

Editor’s PickFree
D. L. Rode, John S. Cetnar
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 075701 (2023)
https://doi.org/10.1063/5.0165201
Published: August 2023
View articletitled, Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities
Open the PDF for Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities in another window
Journal Articles

Construct Schottky interface containing energy-filtering effect: An efficient strategy to decouple thermopower and conductivity

Available to Purchase
Zizhen Lin, Xiaofan Ping, Dongming Zhao, Lichuang Wang, Menglei Li, Zihe Cai, Yun Zhang, Xinlian Li, Xuankai Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 015101 (2023)
https://doi.org/10.1063/5.0151143
Published: July 2023
View articletitled, Construct Schottky interface containing energy-filtering effect: An efficient strategy to decouple thermopower and conductivity
Open the PDF for Construct Schottky interface containing energy-filtering effect: An efficient strategy to decouple thermopower and conductivity in another window
Includes: Supplementary data
Journal Articles

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Editor’s PickAvailable to Purchase
Zachary T. Piontkowski, Evan L. Runnerstrom, Angela Cleri, Anthony McDonald, Jon Ihlefeld, Christopher Saltonstall, Jon-Paul Maria, Thomas E. Beechem
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 195105 (2021)
https://doi.org/10.1063/5.0073345
Published: November 2021
View articletitled, Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide
Open the PDF for Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide in another window
Includes: Supplementary data
Journal Articles

Investigation of Coulomb scattering in terahertz quantum cascade lasers

Available to Purchase
Teppei Miyoshi, Dayan Ban
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 153102 (2021)
https://doi.org/10.1063/5.0041392
Published: April 2021
View articletitled, Investigation of Coulomb scattering in terahertz quantum cascade lasers
Open the PDF for Investigation of Coulomb scattering in terahertz quantum cascade lasers in another window
Journal Articles

An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers

Editor’s PickAvailable to Purchase
K. Naydenov, N. Donato, F. Udrea
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 194504 (2020)
https://doi.org/10.1063/5.0002838
Published: May 2020
View articletitled, An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers
Open the PDF for An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers in another window
Journal Articles

Electrical and photo-electrical properties of spin-coated nanocrystalline PbS thin films evaluated using thermoelectric effect

Available to Purchase
Dhaval Vankhade, Tapas K. Chaudhuri
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 175107 (2020)
https://doi.org/10.1063/1.5138908
Published: May 2020
View articletitled, Electrical and photo-electrical properties of spin-coated nanocrystalline PbS thin films evaluated using thermoelectric effect
Open the PDF for Electrical and photo-electrical properties of spin-coated nanocrystalline PbS thin films evaluated using thermoelectric effect in another window
Journal Articles

A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance

Available to Purchase
Raveena Gupta, Baljinder Kaur, Jesús Carrete, Chandan Bera
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 225105 (2019)
https://doi.org/10.1063/1.5127346
Published: December 2019
View articletitled, A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance
Open the PDF for A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance in another window
Journal Articles

Impact of the scattering physics on the power factor of complex thermoelectric materials

Available to Purchase
Patrizio Graziosi, Chathurangi Kumarasinghe, Neophytos Neophytou
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 155701 (2019)
https://doi.org/10.1063/1.5116793
Published: October 2019
View articletitled, Impact of the scattering physics on the power factor of complex thermoelectric materials
Open the PDF for Impact of the scattering physics on the power factor of complex thermoelectric materials in another window
Includes: Supplementary data
Journal Articles

Lattice resonances in dielectric metasurfaces

Open Access
Gabriel W. Castellanos, Ping Bai, Jaime Gómez Rivas
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 213105 (2019)
https://doi.org/10.1063/1.5094122
Published: June 2019
View articletitled, Lattice resonances in dielectric metasurfaces
Open the PDF for Lattice resonances in dielectric metasurfaces in another window
Journal Articles

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Available to Purchase
Tetsuo Narita (成田哲生), Kazuyoshi Tomita (冨田一義), Yutaka Tokuda (徳田豊), Tatsuya Kogiso (小木曽達也), Masahiro Horita (堀田昌宏), Tetsu Kachi (加地徹)
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 215701 (2018)
https://doi.org/10.1063/1.5057373
Published: December 2018
View articletitled, The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE
Open the PDF for The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE in another window
Journal Articles

On the mechanism of charge transport in low density polyethylene

Available to Purchase
Avnish K. Upadhyay, C. C. Reddy
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 064105 (2017)
https://doi.org/10.1063/1.4997941
Published: August 2017
View articletitled, On the mechanism of charge transport in low density polyethylene
Open the PDF for On the mechanism of charge transport in low density polyethylene in another window
Journal Articles

High field electron transport in indium gallium nitride and indium aluminium nitride

Available to Purchase
N. A. Masyukov, A. V. Dmitriev
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 065701 (2017)
https://doi.org/10.1063/1.4986576
Published: August 2017
View articletitled, High field electron transport in indium gallium nitride and indium aluminium nitride
Open the PDF for High field electron transport in indium gallium nitride and indium aluminium nitride in another window
Journal Articles

Role of interface roughness scattering, temperature, and structural parameters on the performance characteristics of III-nitride quantum cascade detectors

Available to Purchase
S. Saha, J. Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 053104 (2017)
https://doi.org/10.1063/1.4975481
Published: February 2017
View articletitled, Role of interface roughness scattering, temperature, and structural parameters on the performance characteristics of III-nitride quantum cascade detectors
Open the PDF for Role of interface roughness scattering, temperature, and structural parameters on the performance characteristics of III-nitride quantum cascade detectors in another window
Journal Articles

Heavy hole effect on the thermoelectric properties of highly doped p-type lead telluride

Available to Purchase
N. I. Babenko, A. V. Dmitriev
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 025704 (2017)
https://doi.org/10.1063/1.4974049
Published: January 2017
View articletitled, Heavy hole effect on the thermoelectric properties of highly doped p-type lead telluride
Open the PDF for Heavy hole effect on the thermoelectric properties of highly doped p-type lead telluride in another window
Journal Articles

Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations

Free
Dax M. Crum, Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 224301 (2016)
https://doi.org/10.1063/1.4970913
Published: December 2016
View articletitled, Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations
Open the PDF for Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations in another window
Journal Articles

Electrical and structural properties of In-implanted Si1−xGex alloys

Available to Purchase
R. Feng, F. Kremer, D. J. Sprouster, S. Mirzaei, S. Decoster, C. J. Glover, S. A. Medling, J. L. Hansen, A. Nylandsted-Larsen, S. P. Russo, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 025709 (2016)
https://doi.org/10.1063/1.4940046
Published: January 2016
View articletitled, Electrical and structural properties of In-implanted Si1−xGex alloys
Open the PDF for Electrical and structural properties of In-implanted Si1−xGex alloys in another window
Journal Articles

Comparative study of electron transport mechanisms in epitaxial and polycrystalline zinc nitride films

Available to Purchase
Xiang Cao, Yuuki Yamaguchi, Yoshihiko Ninomiya, Naoomi Yamada
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 025104 (2016)
https://doi.org/10.1063/1.4939598
Published: January 2016
View articletitled, Comparative study of electron transport mechanisms in epitaxial and polycrystalline zinc nitride films
Open the PDF for Comparative study of electron transport mechanisms in epitaxial and polycrystalline zinc nitride films in another window
Journal Articles

Plasmon-enhanced phonon and ionized impurity scattering in doped silicon

Available to Purchase
Ming-Jer Chen, Shang-Hsun Hsieh, Chuan-Li Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 045703 (2015)
https://doi.org/10.1063/1.4927268
Published: July 2015
View articletitled, Plasmon-enhanced phonon and ionized impurity scattering in doped silicon
Open the PDF for Plasmon-enhanced phonon and ionized impurity scattering in doped silicon in another window
Journal Articles

Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells

Available to Purchase
Takashi Manago, Shuichi Ishida, Hirotaka Geka, Ichiro Shibasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 065701 (2015)
https://doi.org/10.1063/1.4907806
Published: February 2015
View articletitled, Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells
Open the PDF for Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells in another window