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Journal Articles

Effect of resonant impurities on electrical resistivity in polycrystalline graphene

S. E. Krasavin, V. A. Osipov
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 134301 (2025)
https://doi.org/10.1063/5.0244803
Published: April 2025
View articletitled, Effect of resonant impurities on electrical resistivity in polycrystalline graphene
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Journal Articles

Accurate in situ rock density measurement with cosmic ray muon radiography

Jie Pang, Zhiwei Li, Shuning Dong, Jingtai Li, Xin Mao, Hao Ding, Hao Wang, Xiaoming Guo, Lei Liu, Jianming Zhang, Xinzhou Feng, Bin Liu, Xiaoping Ouyang, Ran Han
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 204901 (2024)
https://doi.org/10.1063/5.0207047
Published: May 2024
View articletitled, Accurate in situ rock density measurement with cosmic ray muon radiography
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Journal Articles

Photoluminescent Bragg curves in lithium fluoride thin films on silicon substrates irradiated with a 35 MeV proton beam

E. Nichelatti, V. Nigro, M. Piccinini, M. A. Vincenti, A. Ampollini, L. Picardi, C. Ronsivalle, R. M. Montereali
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 014501 (2022)
https://doi.org/10.1063/5.0098769
Published: July 2022
View articletitled, Photoluminescent Bragg curves in lithium fluoride thin films on silicon substrates irradiated with a 35 MeV proton beam
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Journal Articles

Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 145701 (2022)
https://doi.org/10.1063/5.0086172
Published: April 2022
View articletitled, Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs
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Journal Articles

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure

Editor’s Pick
Jiahui Duan, Hao Xu, Shujing Zhao, Fengbin Tian, Jinjuan Xiang, Kai Han, Tingting Li, Xiaolei Wang, Wenwu Wang, Tianchun Ye
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 134102 (2022)
https://doi.org/10.1063/5.0084816
Published: April 2022
View articletitled, Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure
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Journal Articles

Invariant embedding approach to secondary electron emission from metals

F. X. Bronold, H. Fehske
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 113302 (2022)
https://doi.org/10.1063/5.0082468
Published: March 2022
View articletitled, Invariant embedding approach to secondary electron emission from metals
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Journal Articles

High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Suman Das, Tamara Isaacs-Smith, Ayayi Ahyi, Marcelo A. Kuroda, Sarit Dhar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 225701 (2021)
https://doi.org/10.1063/5.0073523
Published: December 2021
View articletitled, High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
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Includes: Supplementary data
Journal Articles

An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers

Editor’s Pick
K. Naydenov, N. Donato, F. Udrea
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 194504 (2020)
https://doi.org/10.1063/5.0002838
Published: May 2020
View articletitled, An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers
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Journal Articles

Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Chi-Yin Cheng, Dragica Vasileska
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 155702 (2020)
https://doi.org/10.1063/1.5144214
Published: April 2020
View articletitled, Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions
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Journal Articles

Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter

Sungchul Jung, Hoon Hahn Yoon, Hanbyul Jin, Kyuhyung Mo, Gahyun Choi, Junghyun Lee, Hyesung Park, Kibog Park
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 184302 (2019)
https://doi.org/10.1063/1.5089494
Published: May 2019
View articletitled, Reduction of water-molecule-induced current-voltage hysteresis in graphene field effect transistor with semi-dry transfer using flexible supporter
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Includes: Supplementary data
Journal Articles

Current-voltage and flicker noise analysis and unified modeling for amorphous indium-gallium-zinc-oxide thin film transistors with etch stop layer from 298 to 333 K

Wondwosen Eshetu Muhea, Thomas Gneiting, Benjamin Iñiguez
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 144502 (2019)
https://doi.org/10.1063/1.5086107
Published: April 2019
View articletitled, Current-voltage and flicker noise analysis and unified modeling for amorphous indium-gallium-zinc-oxide thin film transistors with etch stop layer from 298 to 333 K
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Journal Articles

A generalized muon trajectory estimation algorithm with energy loss for application to muon tomography

Stylianos Chatzidakis, Zhengzhi Liu, Jason P. Hayward, John M. Scaglione
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 124903 (2018)
https://doi.org/10.1063/1.5024671
Published: March 2018
View articletitled, A generalized muon trajectory estimation algorithm with energy loss for application to muon tomography
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Journal Articles

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Minxi Cai, Ruohe Yao
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 154503 (2017)
https://doi.org/10.1063/1.4994152
Published: October 2017
View articletitled, Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region
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Journal Articles

The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

Gokula Kannan, Dragica Vasileska
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 114303 (2017)
https://doi.org/10.1063/1.5003253
Published: September 2017
View articletitled, The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs
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Journal Articles

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

D. Lizzit, O. Badami, R. Specogna, D. Esseni
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 245301 (2017)
https://doi.org/10.1063/1.4986644
Published: June 2017
View articletitled, Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme
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Journal Articles

Population dynamics of graphene driven by a few-cycle laser pulse

Chunling Ding, Rong Yu, Xiangying Hao, Duo Zhang, Fengxia Zu
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 214301 (2017)
https://doi.org/10.1063/1.4984313
Published: June 2017
View articletitled, Population dynamics of graphene driven by a few-cycle laser pulse
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Journal Articles

Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ ), and ( 1 1 ¯ 00 ) MOS structures with heavily doped p-bodies

Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 145703 (2017)
https://doi.org/10.1063/1.4981127
Published: April 2017
View articletitled, Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ ), and ( 1 1 ¯ 00 ) MOS structures with heavily doped p-bodies
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Journal Articles

Poly (ethylene imine)-modulated transport behaviors of graphene field effect transistors with double Dirac points

Yilin Sun, Dan Xie, Cheng Zhang, Xinming Li, Jianlong Xu, Mengxing Sun, Changjiu Teng, Xian Li, Hongwei Zhu
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 134305 (2017)
https://doi.org/10.1063/1.4979687
Published: April 2017
View articletitled, Poly (ethylene imine)-modulated transport behaviors of graphene field effect transistors with double Dirac points
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Journal Articles

Multicarrier transport in InGaSb/InAs superlattice structures

W. C. Mitchel, Said Elhamri, H. J. Haugan, Gail J. Brown, Shin Mou, Frank Szmulowicz
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 175701 (2016)
https://doi.org/10.1063/1.4966136
Published: November 2016
View articletitled, Multicarrier transport in InGaSb/InAs superlattice structures
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Journal Articles

Temperature and field dependent low frequency noise characterization of Ge n-FETs

Sayantan Ghosh, Piyush Bhatt, Yogesh Tiwari, Chandan Joishi, Saurabh Lodha
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 095703 (2016)
https://doi.org/10.1063/1.4961875
Published: September 2016
View articletitled, Temperature and field dependent low frequency noise characterization of Ge n-FETs
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