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Journal Articles

A global plasma and surface model of hydrogen/methane inductively coupled discharge to analyze hydrocarbon plasma–surface interactions in extreme-ultraviolet lithography machines

Efe Kemaneci, Achim von Keudell, Luuk Heijmans, Andrei M. Yakunin, Mark van de Kerkhof
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043301 (2024)
https://doi.org/10.1063/5.0213569
Published: July 2024
View article titled, A global plasma and surface model of hydrogen/methane inductively coupled discharge to analyze hydrocarbon plasma–surface interactions in extreme-ultraviolet lithography machines
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Journal Articles

Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

A. Lex, A. Avramescu, F. Vögl, M. Brandl, M. Binder, M. Hetzl, H. Spende, S. Wolter, A. Waag, N. von Malm
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 024501 (2024)
https://doi.org/10.1063/5.0204652
Published: July 2024
View article titled, Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics
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Journal Articles

Basic principles of modeling reactive sputtering

Viktor I. Shapovalov
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165306 (2024)
https://doi.org/10.1063/5.0204220
Published: April 2024
View article titled, Basic principles of modeling reactive sputtering
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Journal Articles

Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition

Qihang Li, Jinping Luo, Zaoyang Li, Mark H. Rummeli, Lijun Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 125302 (2024)
https://doi.org/10.1063/5.0199471
Published: March 2024
View article titled, Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition
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Journal Articles

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Kai Li, Yinchu Shen, Zhijuan Su, Yaping Dan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 014301 (2024)
https://doi.org/10.1063/5.0181306
Published: January 2024
View article titled, Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses
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Journal Articles

Air stable plasma passivation of GaAs at room temperature

Christoffer Kauppinen
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 235705 (2023)
https://doi.org/10.1063/5.0165867
Published: December 2023
View article titled, Air stable plasma passivation of GaAs at room temperature
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Journal Articles

Influence of surface facets on the electronic structure of silicon nanowires and slabs from atomistic calculations

F. A. Nuñez-Murillo, J. R. Cárdenas
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 214302 (2023)
https://doi.org/10.1063/5.0176463
Published: December 2023
View article titled, Influence of surface facets on the electronic structure of silicon nanowires and slabs from atomistic calculations
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Includes: Supplementary data
Journal Articles

Evaluating an electric field modulated plasma enhanced atomic layer deposition of platinum layers on different substrates

Mingming Yan, Tianchong Zhang, Bo Wang, Jing Liu, Xiaoxiao Liang, Yuanze Xu, Futing Yi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 155303 (2023)
https://doi.org/10.1063/5.0157164
Published: October 2023
View article titled, Evaluating an electric field modulated plasma enhanced atomic layer deposition of platinum layers on different substrates
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Journal Articles

Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition

Haris Naeem Abbasi, Xin Qi, Jiarui Gong, Zheng Ju, Seunghwan Min, Yong-Hang Zhang, Zhenqiang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 135304 (2023)
https://doi.org/10.1063/5.0161858
Published: October 2023
View article titled, Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition
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Journal Articles

Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression

Hanif Mohammadi, Ronel C. Roca, Yuwei Zhang, Hyunju Lee, Yoshio Ohshita, Naotaka Iwata, Itaru Kamiya
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185303 (2023)
https://doi.org/10.1063/5.0140035
Published: May 2023
View article titled, Passivation capping of InAs surface quantum dots by TMA/Al<sub>2</sub>O<sub>3</sub>: PL enhancement and blueshift suppression
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Includes: Supplementary data
Journal Articles

Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices

Nalin Vilochan Mishra, Aditya Sankar Medury
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 175702 (2023)
https://doi.org/10.1063/5.0147578
Published: May 2023
View article titled, Impact of band edge energy on interface traps and electrostatics of ultra-thin-body silicon-on-insulator devices
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Includes: Supplementary data
Journal Articles

Hydrogenation of p+ poly-Si by Al2O3 nanolayers prepared by atomic layer deposition

Roel J. Theeuwes, Jimmy Melskens, Wolfhard Beyer, Uwe Breuer, Astrid Gutjahr, Agnes A. Mewe, Bart Macco, Wilhelmus M. M. Kessels
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 145301 (2023)
https://doi.org/10.1063/5.0141029
Published: April 2023
View article titled, Hydrogenation of <em>p</em><sup>+</sup> poly-Si by Al<sub>2</sub>O<sub>3</sub> nanolayers prepared by atomic layer deposition
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Includes: Supplementary data
Journal Articles

Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators

I. R. Hooper, E. Khorani, X. Romain, L. E. Barr, T. Niewelt, S. Saxena, A. Wratten, N. E. Grant, J. D. Murphy, E. Hendry
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 233102 (2022)
https://doi.org/10.1063/5.0128234
Published: December 2022
View article titled, Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators
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Includes: Supplementary data
Journal Articles

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Christopher Chen, Jeong-Mo Hwang, Young-Woo Ok, Wook-Jin Choi, Vijaykumar Upadhyaya, Brian Rounsaville, Ajeet Rohatgi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 213302 (2022)
https://doi.org/10.1063/5.0111681
Published: December 2022
View article titled, Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
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Journal Articles

Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors

D. Ramos, M. Delmas, R. Ivanov, D. Evans, L. Žurauskaitė, S. Almqvist, S. Becanovic, L. Höglund, E. Costard, P. E. Hellström
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 204501 (2022)
https://doi.org/10.1063/5.0106878
Published: November 2022
View article titled, Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors
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Journal Articles

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Yuanchao Huang, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 155704 (2022)
https://doi.org/10.1063/5.0108726
Published: October 2022
View article titled, Effect of hydrogen on the unintentional doping of 4H silicon carbide
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Journal Articles

Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy

J. D. Murphy, N. E. Grant, S. L. Pain, T. Niewelt, A. Wratten, E. Khorani, V. P. Markevich, A. R. Peaker, P. P. Altermatt, J. S. Lord, K. Yokoyama
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 065704 (2022)
https://doi.org/10.1063/5.0099492
Published: August 2022
View article titled, Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy
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Journal Articles

Identifying the physical mechanisms of polycrystalline lead salt photoconductors

Steven Jost
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 064503 (2022)
https://doi.org/10.1063/5.0098505
Published: August 2022
View article titled, Identifying the physical mechanisms of polycrystalline lead salt photoconductors
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Journal Articles

Extracting surface recombination parameters of germanium–dielectric interfaces by corona-lifetime experiments

Wilhelmus J. H. (Willem-Jan) Berghuis, Max Helmes, Jimmy Melskens, Roel J. Theeuwes, Wilhelmus M. M. (Erwin) Kessels, Bart Macco
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 195301 (2022)
https://doi.org/10.1063/5.0091759
Published: May 2022
View article titled, Extracting surface recombination parameters of germanium–dielectric interfaces by corona-lifetime experiments
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Includes: Supplementary data
Journal Articles

On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon

Dominic C. Walter, Vladimir V. Voronkov, Robert Falster, Dennis Bredemeier, Jan Schmidt
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 165702 (2022)
https://doi.org/10.1063/5.0086307
Published: April 2022
View article titled, On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon
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