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Journal Articles

Optical and electronic effects of rapid thermal annealing at Ir–Ga₂O₃ interfaces

Daram N. Ramdin, Micah S. Haseman, Hsien-Lien Huang, Kevin D. Leedy, Jinwoo Hwang, Leonard J. Brillson

J. Appl. Phys. 131, 205302 (2022)

https://doi.org/10.1063/5.0090161

Published: May 2022

View articletitled, Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

Includes: Supplementary data

Journal Articles

Point defects in Ga₂O₃

Matthew D. McCluskey

J. Appl. Phys. 127, 101101 (2020)

https://doi.org/10.1063/1.5142195

Published: March 2020

View articletitled, Point defects in Ga2O3

Journal Articles

Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO₃

Hantian Gao, Sulata Sahu, Clive A. Randall, Leonard J. Brillson

J. Appl. Phys. 127, 094105 (2020)

https://doi.org/10.1063/1.5130892

Published: March 2020

View articletitled, Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO3

Includes: Supplementary data

Journal Articles

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Yosuke Nagasawa, Ryuichi Sugie, Kazunobu Kojima, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Shigefusa F. Chichibu

J. Appl. Phys. 126, 215703 (2019)

https://doi.org/10.1063/1.5125623

Published: December 2019

View articletitled, Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Journal Articles

Modeling and interpretation of UV and blue luminescence intensity in β-Ga₂O₃ by silicon and nitrogen doping

T. Onuma, Y. Nakata, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, S. Yamakoshi, M. Higashiwaki

J. Appl. Phys. 124, 075103 (2018)

https://doi.org/10.1063/1.5030612

Published: August 2018

View articletitled, Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

Journal Articles

Bandgap and band edge positions in compositionally graded ZnCdO

I. J. T. Jensen, K. M. Johansen, W. Zhan, V. Venkatachalapathy, L. Brillson, A. Yu. Kuznetsov, Ø. Prytz

J. Appl. Phys. 124, 015302 (2018)

https://doi.org/10.1063/1.5036710

Published: July 2018

View articletitled, Bandgap and band edge positions in compositionally graded ZnCdO

Journal Articles

Interface properties of Si-SiO₂-Ta₂O₅ structure by cathodoluminescence spectroscopy

A. P. Baraban, V. A. Dmitriev, V. E. Drozd, V. A. Prokofiev, S. N. Samarin, E. O. Filatova

J. Appl. Phys. 119, 055307 (2016)

https://doi.org/10.1063/1.4941270

Published: February 2016

View articletitled, Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

Journal Articles

Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

B. J. M. Brenny, T. Coenen, A. Polman

J. Appl. Phys. 115, 244307 (2014)

https://doi.org/10.1063/1.4885426

Published: June 2014

View articletitled, Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

Journal Articles

Temperature dependence of the indirect bandgap in thallium bromide from cathodoluminescence spectroscopy

A. Ray, Holland M. Smith, III, N. M. Haegel

J. Appl. Phys. 115, 163709 (2014)

https://doi.org/10.1063/1.4874265

Published: April 2014

View articletitled, Temperature dependence of the indirect bandgap in thallium bromide from cathodoluminescence spectroscopy

Journal Articles

Heterojunction band offsets and dipole formation at BaTiO₃/SrTiO₃ interfaces

Snjezana Balaz, Zhaoquan Zeng, Leonard J. Brillson

J. Appl. Phys. 114, 183701 (2013)

https://doi.org/10.1063/1.4829695

Published: November 2013

View articletitled, Heterojunction band offsets and dipole formation at BaTiO3/SrTiO3 interfaces

Journal Articles

Spectroscopic analysis of Eu³⁺ in single-crystal hexagonal phase AlN

John B. Gruber, Ulrich Vetter, Takashi Taniguchi, Gary W. Burdick, Hans Hofsäss, Sreerenjini Chandra, Dhiraj K. Sardar

J. Appl. Phys. 110, 023104 (2011)

https://doi.org/10.1063/1.3609076

Published: July 2011

View articletitled, Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN

Journal Articles

Inhomogeneities in Ni ∕ 4 H - Si C Schottky barriers: Localized Fermi-level pinning by defect states

D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, S. Tumakha, M. Gao, L. J. Brillson

J. Appl. Phys. 101, 114514 (2007)

https://doi.org/10.1063/1.2745436

Published: June 2007

View articletitled, Inhomogeneities in Ni ∕ 4 H - Si C Schottky barriers: Localized Fermi-level pinning by defect states

Journal Articles

Controlled catalytic growth and characterization of zinc oxide nanopillars on a -plane sapphire

A. Reiser, A. Ladenburger, G. M. Prinz, M. Schirra, M. Feneberg, A. Langlois, R. Enchelmaier, Y. Li, R. Sauer, K. Thonke

J. Appl. Phys. 101, 054319 (2007)

https://doi.org/10.1063/1.2710295

Published: March 2007

View articletitled, Controlled catalytic growth and characterization of zinc oxide nanopillars on a -plane sapphire

Journal Articles

Stress dependence of the cathodoluminescence spectrum of N-doped 3 C ‐ Si C

Alessandro Alan Porporati, Koichiro Hosokawa, Wenliang Zhu, Giuseppe Pezzotti

J. Appl. Phys. 100, 093508 (2006)

https://doi.org/10.1063/1.2363260

Published: November 2006

View articletitled, Stress dependence of the cathodoluminescence spectrum of N-doped 3 C ‐ Si C

Journal Articles

Remote hydrogen plasma processing of ZnO single crystal surfaces

Yuri M. Strzhemechny, John Nemergut, Phillip E. Smith, Junjik Bae, David C. Look, Leonard J. Brillson

J. Appl. Phys. 94, 4256–4262 (2003)

https://doi.org/10.1063/1.1606859

Published: October 2003

View articletitled, Remote hydrogen plasma processing of ZnO single crystal surfaces

Journal Articles

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

M. Yoshikawa, K. Matsuda, Y. Yamaguchi, T. Matsunobe, Y. Nagasawa, H. Fujino, T. Yamane

J. Appl. Phys. 92, 7153–7156 (2002)

https://doi.org/10.1063/1.1520726

Published: December 2002

View articletitled, Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

Journal Articles

Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy

B. D. White, L. J. Brillson, M. Bataiev, L. J. Brillson, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, D. M. Fleetwood, S. T. Pantelides

J. Appl. Phys. 92, 5729–5734 (2002)

https://doi.org/10.1063/1.1512319

Published: November 2002

View articletitled, Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy

Journal Articles

Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

A. Kakanakova-Georgieva, R. Yakimova, A. Henry, M. K. Linnarsson, M. Syväjärvi, E. Janzén

J. Appl. Phys. 91, 2890–2895 (2002)

https://doi.org/10.1063/1.1436293

Published: March 2002

View articletitled, Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

Journal Articles

Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

U. Egger, M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, U. Gösele, R. Franzheld, M. Uematsu, H. Ito

J. Appl. Phys. 81, 6056–6061 (1997)

https://doi.org/10.1063/1.364453

Published: May 1997

View articletitled, Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Journal Articles

Electron irradiation‐induced changes in the surface topography of silicon dioxide

M. A. Stevens Kalceff, M. R. Phillips, A. R. Moon

J. Appl. Phys. 80, 4308–4314 (1996)

https://doi.org/10.1063/1.363379

Published: October 1996

View articletitled, Electron irradiation‐induced changes in the surface topography of silicon dioxide

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Optical and electronic effects of rapid thermal annealing at Ir–Ga₂O₃ interfaces

Point defects in Ga₂O₃

Direct, spatially resolved observation of defect states with electromigration and degradation of single crystal SrTiO₃

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Modeling and interpretation of UV and blue luminescence intensity in β-Ga₂O₃ by silicon and nitrogen doping

Bandgap and band edge positions in compositionally graded ZnCdO

Interface properties of Si-SiO₂-Ta₂O₅ structure by cathodoluminescence spectroscopy

Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

Temperature dependence of the indirect bandgap in thallium bromide from cathodoluminescence spectroscopy

Heterojunction band offsets and dipole formation at BaTiO₃/SrTiO₃ interfaces

Spectroscopic analysis of Eu³⁺ in single-crystal hexagonal phase AlN

Inhomogeneities in Ni ∕ 4 H - Si C Schottky barriers: Localized Fermi-level pinning by defect states

Controlled catalytic growth and characterization of zinc oxide nanopillars on a -plane sapphire

Stress dependence of the cathodoluminescence spectrum of N-doped 3 C ‐ Si C

Remote hydrogen plasma processing of ZnO single crystal surfaces

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy

Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Electron irradiation‐induced changes in the surface topography of silicon dioxide

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