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Journal Articles

Two-step nucleation and crystal growth in a metastable solution

Dmitri V. Alexandrov, Eugenya V. Makoveeva

J. Appl. Phys. 134, 234701 (2023)

https://doi.org/10.1063/5.0173801

Published: December 2023

View article titled, Two-step nucleation and crystal growth in a metastable solution

Journal Articles

Thermodynamic analysis of oxide vapor phase epitaxy of GaN

Yuki Sakurai, Shigeyoshi Usami, Masayuki Imanishi, Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Mihoko Maruyama, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, Yusuke Mori

J. Appl. Phys. 134, 085704 (2023)

https://doi.org/10.1063/5.0160106

Published: August 2023

View article titled, Thermodynamic analysis of oxide vapor phase epitaxy of GaN

Journal Articles

Interplay between salt precipitation, corner liquid film flow, and gas–liquid displacement during evaporation in microfluidic pore networks

Rui Wu, Feng Chen

J. Appl. Phys. 133, 074701 (2023)

https://doi.org/10.1063/5.0135135

Published: February 2023

View article titled, Interplay between salt precipitation, corner liquid film flow, and gas–liquid displacement during evaporation in microfluidic pore networks

Includes: Supplementary data

Journal Articles

High electron mobility in AlN:Si by point and extended defect management

Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar

J. Appl. Phys. 132, 185703 (2022)

https://doi.org/10.1063/5.0124589

Published: November 2022

View article titled, High electron mobility in AlN:Si by point and extended defect management

Journal Articles

Room-temperature nonradiative recombination lifetimes in c-plane Al_1−xIn_xN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, S. F. Chichibu

J. Appl. Phys. 132, 163102 (2022)

https://doi.org/10.1063/5.0106540

Published: October 2022

View article titled, Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Journal Articles

Characteristic boundary layer evolution in globulitic solidification of alloys with interface curvature and attachment kinetics

Bohan Li, Hui Xing, Hanxu Jing, Rui Hu

J. Appl. Phys. 132, 135113 (2022)

https://doi.org/10.1063/5.0106555

Published: October 2022

View article titled, Characteristic boundary layer evolution in globulitic solidification of alloys with interface curvature and attachment kinetics

Journal Articles

Mg-doping and free-hole properties of hot-wall MOCVD GaN

A. Papamichail, A. Kakanakova-Georgieva, E. Ö. Sveinbjörnsson, A. R. Persson, B. Hult, N. Rorsman, V. Stanishev, S. P. Le, P. O. Å. Persson, M. Nawaz, J. T. Chen, P. P. Paskov, V. Darakchieva

J. Appl. Phys. 131, 185704 (2022)

https://doi.org/10.1063/5.0089406

Published: May 2022

View article titled, Mg-doping and free-hole properties of hot-wall MOCVD GaN

Includes: Supplementary data

Journal Articles

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study

Arijit Roy, Min-Gyu Cho, Pil-Ryung Cha

J. Appl. Phys. 131, 185106 (2022)

https://doi.org/10.1063/5.0087758

Published: May 2022

View article titled, Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study

Includes: Supplementary data

Journal Articles

Uphill phosphorus diffusion in carbon co-implanted silicon

P. Dumas, S. Duguay, F. Hilario, A. Gauthier, D. Blavette

J. Appl. Phys. 131, 115102 (2022)

https://doi.org/10.1063/5.0074682

Published: March 2022

View article titled, Uphill phosphorus diffusion in carbon co-implanted silicon

Journal Articles

Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process

Haruo Sudo, Kozo Nakamura, Hideyuki Okamura, Susumu Maeda, Koji Sueoka

J. Appl. Phys. 131, 055704 (2022)

https://doi.org/10.1063/5.0080164

Published: February 2022

View article titled, Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process

Journal Articles

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Dennis Szymanski, Dolar Khachariya, Tim B. Eldred, Pegah Bagheri, Shun Washiyama, Alexander Chang, Spyridon Pavlidis, Ronny Kirste, Pramod Reddy, Erhard Kohn, Lincoln Lauhon, Ramon Collazo, Zlatko Sitar

J. Appl. Phys. 131, 015703 (2022)

https://doi.org/10.1063/5.0076044

Published: January 2022

View article titled, GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Journal Articles

A pathway to highly conducting Ge-doped AlGaN

Pegah Bagheri, Ji Hyun Kim, Shun Washiyama, Pramod Reddy, Andrew Klump, Ronny Kirste, Seiji Mita, Ramón Collazo, Zlatko Sitar

J. Appl. Phys. 130, 205703 (2021)

https://doi.org/10.1063/5.0071791

Published: November 2021

View article titled, A pathway to highly conducting Ge-doped AlGaN

Journal Articles

Equation to determine the sizes of various light and heavy metallic nanoparticles prepared by pulsed wire discharge

Hieu Duy Nguyen, Toru Sasaki, Chu Minh Ngo, Yoshinori Tokoi, Thi-Mai-Dung Do, Tadachika Nakayama, Hisayuki Suematsu, Koichi Niihara

J. Appl. Phys. 130, 185901 (2021)

https://doi.org/10.1063/5.0064989

Published: November 2021

View article titled, Equation to determine the sizes of various light and heavy metallic nanoparticles prepared by pulsed wire discharge

Journal Articles

Effect of magnetic field-dependent effective thermal conductivity of melted layer on nanosecond laser ablation of copper and formation of nanoparticles at atmospheric air pressure

Khwairakpam Shantakumar Singh, Ashwini Kumar Sharma

J. Appl. Phys. 130, 043302 (2021)

https://doi.org/10.1063/5.0051286

Published: July 2021

View article titled, Effect of magnetic field-dependent effective thermal conductivity of melted layer on nanosecond laser ablation of copper and formation of nanoparticles at atmospheric air pressure

Journal Articles

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas, P.-L. Julliard, J. Borrel, S. Duguay, F. Hilario, F. Deprat, V. Lu, W. Zhao, W Zou, E. Arevalo, D. Blavette

J. Appl. Phys. 129, 195706 (2021)

https://doi.org/10.1063/5.0049782

Published: May 2021

View article titled, Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Journal Articles

Electric field induced charge migration and formation of conducting filament during resistive switching in electrochemical metallization (ECM) memory cells

Arijit Roy, Pil-Ryung Cha

J. Appl. Phys. 128, 205102 (2020)

https://doi.org/10.1063/5.0026350

Published: November 2020

View article titled, Electric field induced charge migration and formation of conducting filament during resistive switching in electrochemical metallization (ECM) memory cells

Includes: Supplementary data

Journal Articles

Effect of grain size on thin film stress and morphology using kinetic Monte Carlo simulations

Eric Chason, Piyush Jagtap

J. Appl. Phys. 128, 145301 (2020)

https://doi.org/10.1063/5.0023081

Published: October 2020

View article titled, Effect of grain size on thin film stress and morphology using kinetic Monte Carlo simulations

Journal Articles

The essential role of redox potential/equilibrium constant in the ability of non-equilibrium plasma for nano-synthesis in liquids

Van-Phuoc Thai, Hideto Furuno, Nobuo Saito, Kazumasa Takahashi, Toru Sasaki, Takashi Kikuchi

J. Appl. Phys. 128, 043305 (2020)

https://doi.org/10.1063/5.0012983

Published: July 2020

View article titled, The essential role of redox potential/equilibrium constant in the ability of non-equilibrium plasma for nano-synthesis in liquids

Journal Articles

Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

Shashwat Rathkanthiwar, Anisha Kalra, Rangarajan Muralidharan, Digbijoy N. Nath, Srinivasan Raghavan

J. Appl. Phys. 127, 205301 (2020)

https://doi.org/10.1063/1.5127193

Published: May 2020

View article titled, Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

Includes: Supplementary data

Journal Articles

The role of chemical potential in compensation control in Si:AlGaN

Shun Washiyama, Pramod Reddy, Biplab Sarkar, Mathew H. Breckenridge, Qiang Guo, Pegah Bagheri, Andrew Klump, Ronny Kirste, James Tweedie, Seiji Mita, Zlatko Sitar, Ramón Collazo

J. Appl. Phys. 127, 105702 (2020)

https://doi.org/10.1063/1.5132953

Published: March 2020

View article titled, The role of chemical potential in compensation control in Si:AlGaN

NARROW

Topics

Two-step nucleation and crystal growth in a metastable solution

Thermodynamic analysis of oxide vapor phase epitaxy of GaN

Interplay between salt precipitation, corner liquid film flow, and gas–liquid displacement during evaporation in microfluidic pore networks

High electron mobility in AlN:Si by point and extended defect management

Room-temperature nonradiative recombination lifetimes in c-plane Al_1−xIn_xN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Characteristic boundary layer evolution in globulitic solidification of alloys with interface curvature and attachment kinetics

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study

Uphill phosphorus diffusion in carbon co-implanted silicon

Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

A pathway to highly conducting Ge-doped AlGaN

Equation to determine the sizes of various light and heavy metallic nanoparticles prepared by pulsed wire discharge

Effect of magnetic field-dependent effective thermal conductivity of melted layer on nanosecond laser ablation of copper and formation of nanoparticles at atmospheric air pressure

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Electric field induced charge migration and formation of conducting filament during resistive switching in electrochemical metallization (ECM) memory cells

Effect of grain size on thin film stress and morphology using kinetic Monte Carlo simulations

The essential role of redox potential/equilibrium constant in the ability of non-equilibrium plasma for nano-synthesis in liquids

Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

The role of chemical potential in compensation control in Si:AlGaN

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