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Journal Articles

Electrodeless method for ultra-low mobility with carrier-resolution of nanochannel

Yongjin Kim, Thao Phuong Nguyen, Mihyun Yang, Hyojin Yoon, Manoj Kumar Sharma, Jungsub Lee, Hoyeol Lee, Suar Oh, Moonhor Ree, Junwoo Son, Ji Hoon Shim, Jeehoon Kim, Seong Chu Lim, Kyuwook Ihm
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 205705 (2023)
https://doi.org/10.1063/5.0167472
Published: November 2023
View article titled, Electrodeless method for ultra-low mobility with carrier-resolution of nanochannel
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Includes: Supplementary data
Journal Articles

Origin of depressed fill factor in organic solar cells due to S-shape current–voltage characteristics

Aniket Rana, Amit Kumar, Nikita Vashistha, Kuldeep K. Garg, Suresh Chand, Rajiv K. Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 053101 (2020)
https://doi.org/10.1063/1.5131355
Published: February 2020
View article titled, Origin of depressed fill factor in organic solar cells due to S-shape current–voltage characteristics
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Includes: Supplementary data
Journal Articles

Hole transport layer influencing the charge carrier dynamics during the degradation of organic solar cells

Aniket Rana, Amit Kumar, Suresh Chand, Rajiv K. Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 053102 (2019)
https://doi.org/10.1063/1.5059555
Published: February 2019
View article titled, Hole transport layer influencing the charge carrier dynamics during the degradation of organic solar cells
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Includes: Supplementary data
Journal Articles

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

Karl W. Böer
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 165701 (2016)
https://doi.org/10.1063/1.4964877
Published: October 2016
View article titled, Minimum entropy principle-based solar cell operation without a <em>pn</em>-junction and a thin CdS layer to extract the holes from the emitter
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Journal Articles

Wave-particle duality of gated p-i-n fin field-effect transistors based on tunneling and diffusion transportation

Yu-Hsien Lin, Wan-Ting Tsai
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 214504 (2015)
https://doi.org/10.1063/1.4921951
Published: June 2015
View article titled, Wave-particle duality of gated p-i-n fin field-effect transistors based on tunneling and diffusion transportation
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Journal Articles

Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation

V. Dobrovolsky
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 154503 (2014)
https://doi.org/10.1063/1.4897929
Published: October 2014
View article titled, Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation
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Journal Articles

A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics

Vishnu Gopal
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 084502 (2014)
https://doi.org/10.1063/1.4893899
Published: August 2014
View article titled, A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics
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Journal Articles

Revisiting single photon avalanche diode current-voltage modeling and transient characteristics

M. Javitt, V. Savuskan, T. Merhav, Y. Nemirovsky
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 204503 (2014)
https://doi.org/10.1063/1.4875855
Published: May 2014
View article titled, Revisiting single photon avalanche diode current-voltage modeling and transient characteristics
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Journal Articles

Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing

K. Sudoh, R. Hiruta, H. Kuribayashi
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 183512 (2013)
https://doi.org/10.1063/1.4829912
Published: November 2013
View article titled, Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing
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Journal Articles

Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors

M. Sakhno, A. Golenkov, F. Sizov
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 164503 (2013)
https://doi.org/10.1063/1.4826364
Published: October 2013
View article titled, Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors
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Journal Articles

A thousand-fold enhancement of photoluminescence in porous silicon using ion irradiation

S. Azimi, J. Song, Z. Y. Dang, M. B. H. Breese
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 053517 (2013)
https://doi.org/10.1063/1.4817658
Published: August 2013
View article titled, A thousand-fold enhancement of photoluminescence in porous silicon using ion irradiation
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Journal Articles

Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes

W. C. Germs, S. L. M. van Mensfoort, R. J. de Vries, R. Coehoorn
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 074506 (2012)
https://doi.org/10.1063/1.3701575
Published: April 2012
View article titled, Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes
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Journal Articles

Effect of surface charge density and electro-osmotic flow on ionic current in a bipolar nanopore fluidic diode

Kunwar Pal Singh, Manoj Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 084322 (2011)
https://doi.org/10.1063/1.3656708
Published: October 2011
View article titled, Effect of surface charge density and electro-osmotic flow on ionic current in a bipolar nanopore fluidic diode
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Journal Articles

A first principles theoretical examination of graphene-based field effect transistors

James G. Champlain
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 084515 (2011)
https://doi.org/10.1063/1.3573517
Published: April 2011
View article titled, A first principles theoretical examination of graphene-based field effect transistors
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Journal Articles

Stress-induced traps in multilayered structures

Magdalena Lidia Ciurea, Sorina Lazanu, Ionel Stavarache, Ana-Maria Lepadatu, Vladimir Iancu, Mihai Razvan Mitroi, Raoul Rashid Nigmatullin, Cristina Mihaela Baleanu
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013717 (2011)
https://doi.org/10.1063/1.3525582
Published: January 2011
View article titled, Stress-induced traps in multilayered structures
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Journal Articles

Nanostructure determines the intensity-dependence of open-circuit voltage in plastic solar cells

Obadiah G. Reid, Hao Xin, Samson A. Jenekhe, David S. Ginger
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 084320 (2010)
https://doi.org/10.1063/1.3482009
Published: October 2010
View article titled, Nanostructure determines the intensity-dependence of open-circuit voltage in plastic solar cells
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Includes: Supplementary data
Journal Articles

The effect of Co on room temperature positive magnetoresistance in the Co x  C 1 − x / Si system

Xin Zhang, Xiaozhong Zhang, Caihua Wan
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 063712 (2010)
https://doi.org/10.1063/1.3487942
Published: September 2010
View article titled, The effect of Co on room temperature positive magnetoresistance in the Co x  C 1 − x / Si system
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Journal Articles

Effect of proton energy on damage generation in irradiated silicon

S. Väyrynen, J. Räisänen
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 084903 (2010)
https://doi.org/10.1063/1.3371714
Published: April 2010
View article titled, Effect of proton energy on damage generation in irradiated silicon
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Journal Articles

Drain current model for thin-film transistors with interface trap states

Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 034502 (2010)
https://doi.org/10.1063/1.3289439
Published: February 2010
View article titled, Drain current model for thin-film transistors with interface trap states
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Journal Articles

Polymer field-effect transistors based on semiconducting polymer heterojunctions

Chuan Liu, Henning Sirringhaus
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 014516 (2010)
https://doi.org/10.1063/1.3264732
Published: January 2010
View article titled, Polymer field-effect transistors based on semiconducting polymer heterojunctions
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