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Journal Articles

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3

A. A. Vasilev, A. I. Kochkova, A. Y. Polyakov, A. A. Romanov, N. R. Matros, L. A. Alexanyan, I. V. Shchemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 025701 (2024)
https://doi.org/10.1063/5.0209322
Published: July 2024
View article titled, Observation of temperature-dependent capture cross section for main deep-levels in β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

Matthew A. Mircovich, John Kouvetakis, José Menéndez
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 124501 (2024)
https://doi.org/10.1063/5.0185557
Published: March 2024
View article titled, A practical theoretical model for Ge-like epitaxial diodes: I. The <em>I</em>–<em>V</em> characteristics
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Journal Articles

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Hideharu Matsuura, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Yuuki Ishida, Sadafumi Yoshida
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 115701 (2023)
https://doi.org/10.1063/5.0165404
Published: September 2023
View article titled, Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC
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Journal Articles

Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy

Amanda Langørgen, Ymir Kalmann Frodason, Robert Karsthof, Holger von Wenckstern, Ingvild Julie Thue Jensen, Lasse Vines, Marius Grundmann
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 015701 (2023)
https://doi.org/10.1063/5.0150994
Published: July 2023
View article titled, Defect level in <em>κ</em>-Ga<sub>2</sub>O<sub>3</sub> revealed by thermal admittance spectroscopy
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Journal Articles

Investigation of time variations of redox reactions in SrRuO3 through interface-sensitive resistance measurements

Hiroshi Kambara, Hiroshi Shimazaki, Kenichi Tenya
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 125306 (2023)
https://doi.org/10.1063/5.0135695
Published: March 2023
View article titled, Investigation of time variations of redox reactions in SrRuO<sub>3</sub> through interface-sensitive resistance measurements
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Includes: Supplementary data
Journal Articles

Hopping charge transport in hydrogenated amorphous silicon–germanium alloy thin films

L. Stolik, M. A. Eslamisaray, E. Nguyen, U. R. Kortshagen, J. Kakalios
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 225110 (2022)
https://doi.org/10.1063/5.0077441
Published: June 2022
View article titled, Hopping charge transport in hydrogenated amorphous silicon–germanium alloy thin films
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Journal Articles

Electronic and ionic conductivity in β-Ga2O3 single crystals

Leila Ghadbeigi, Rujun Sun, Jani Jesenovec, Arkka Bhattacharyya, John McCloy, Sriram Krishnamoorthy, Michael A. Scarpulla, Berardi Sensale-Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 085102 (2022)
https://doi.org/10.1063/5.0073395
Published: February 2022
View article titled, Electronic and ionic conductivity in β-Ga<sub>2</sub>O<sub>3</sub> single crystals
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Journal Articles

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

Editor’s Pick
Joyce Ann T. de Guzman, Vladimir P. Markevich, Ian D. Hawkins, José Coutinho, Hussein M. Ayedh, Jeff Binns, Nikolay V. Abrosimov, Stanislau B. Lastovskii, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 245703 (2021)
https://doi.org/10.1063/5.0076980
Published: December 2021
View article titled, Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
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Journal Articles

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Manuel Fregolent, Carlo De Santi, Matteo Buffolo, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 245704 (2021)
https://doi.org/10.1063/5.0065434
Published: December 2021
View article titled, Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes
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Journal Articles

Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

Ramdas P. Khade, Sujan Sarkar, Amitava DasGupta, Nandita DasGupta
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 205707 (2021)
https://doi.org/10.1063/5.0066036
Published: November 2021
View article titled, Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor
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Journal Articles

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Xiaorui Wang, Tao Wang, Dapeng Yu, Shijie Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 205704 (2021)
https://doi.org/10.1063/5.0064466
Published: November 2021
View article titled, Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells
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Journal Articles

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 205701 (2021)
https://doi.org/10.1063/5.0066681
Published: November 2021
View article titled, Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
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Journal Articles

Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions

M. Nyborg, Ilia Kolevatov, G. C. Vásquez, K. Bergum, E. Monakhov
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 175701 (2021)
https://doi.org/10.1063/5.0059406
Published: November 2021
View article titled, Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions
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Journal Articles

Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors

B. S. Chaudhari, H. Goto, M. Niraula, K. Yasuda
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 055302 (2021)
https://doi.org/10.1063/5.0058504
Published: August 2021
View article titled, Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors
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Journal Articles

A carbon-doping related luminescence band in GaN revealed by below bandgap excitation

F. Zimmermann, J. Beyer, F. C. Beyer, G. Gärtner, I. Gamov, K. Irmscher, E. Richter, M. Weyers, J. Heitmann
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 055703 (2021)
https://doi.org/10.1063/5.0053940
Published: August 2021
View article titled, A carbon-doping related luminescence band in GaN revealed by below bandgap excitation
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Journal Articles

Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se2 solar cells

Hamidou Tangara, Setareh Zahedi-Azad, Jennifer Not, Jakob Schick, Alban Lafuente-Sampietro, Muhammad Monirul Islam, Roland Scheer, Takeaki Sakurai
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 183108 (2021)
https://doi.org/10.1063/5.0046098
Published: May 2021
View article titled, Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se<sub>2</sub> solar cells
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Includes: Supplementary data
Journal Articles

Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions

Alexander Azarov, Augustinas Galeckas, Vishnukanthan Venkatachalapathy, Zengxia Mei, Xiaolong Du, Eduard Monakhov, Andrej Kuznetsov
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 125701 (2020)
https://doi.org/10.1063/5.0021089
Published: September 2020
View article titled, Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions
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Journal Articles

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

Shun Washiyama, Yan Guan, Seiji Mita, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 115301 (2020)
https://doi.org/10.1063/5.0002891
Published: March 2020
View article titled, Recovery kinetics in high temperature annealed AlN heteroepitaxial films
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Journal Articles

Giant shifts of photoluminescence bands in GaN

Michael A. Reshchikov
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 055701 (2020)
https://doi.org/10.1063/1.5140686
Published: February 2020
View article titled, Giant shifts of photoluminescence bands in GaN
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Journal Articles

Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy

C. R. Engst, I. Eisele, C. Kutter
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 035704 (2020)
https://doi.org/10.1063/1.5134663
Published: January 2020
View article titled, Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy
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