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Journal Articles

Distribution of atomic rearrangement vectors in a metallic glass

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Ajay Annamareddy, Bu Wang, Paul M. Voyles, Dane Morgan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 195103 (2022)
https://doi.org/10.1063/5.0125531
Published: November 2022
View articletitled, Distribution of atomic rearrangement vectors in a metallic glass
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Journal Articles

Transition-metal ions in β-Ga2O3 crystals: Identification of Ni acceptors

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T. D. Gustafson, N. C. Giles, B. C. Holloway, J. Jesenovec, B. L. Dutton, J. S. McCloy, M. D. McCluskey, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 185705 (2022)
https://doi.org/10.1063/5.0126467
Published: November 2022
View articletitled, Transition-metal ions in β-Ga2O3 crystals: Identification of Ni acceptors
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Journal Articles

Study of EPR-based nanodielectrics under operational conditions for DC cable insulation

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Mohamadreza Arab Baferani, Tohid Shahsavarian, Mattewos Tefferi, Qin Chen, Yang Cao
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 084101 (2022)
https://doi.org/10.1063/5.0091930
Published: August 2022
View articletitled, Study of EPR-based nanodielectrics under operational conditions for DC cable insulation
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Journal Articles

Zn acceptors in β-Ga2O3 crystals

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T. D. Gustafson, J. Jesenovec, C. A. Lenyk, N. C. Giles, J. S. McCloy, M. D. McCluskey, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 155701 (2021)
https://doi.org/10.1063/5.0047947
Published: April 2021
View articletitled, Zn acceptors in β-Ga2O3 crystals
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Journal Articles

Charge trapping at Fe due to midgap levels in Ga2O3

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Suman Bhandari, M. E. Zvanut
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 085703 (2021)
https://doi.org/10.1063/5.0042622
Published: February 2021
View articletitled, Charge trapping at Fe due to midgap levels in Ga2O3
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Journal Articles

Photoinduced trapping of charge at sulfur vacancies and copper ions in photorefractive Sn2P2S6 crystals

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T. D. Gustafson, E. M. Golden, E. M. Scherrer, N. C. Giles, A. A. Grabar, S. A. Basun, D. R. Evans, J. E. Slagle, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 085702 (2021)
https://doi.org/10.1063/5.0042905
Published: February 2021
View articletitled, Photoinduced trapping of charge at sulfur vacancies and copper ions in photorefractive Sn2P2S6 crystals
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Journal Articles

Doping of ultra-thin Si films: Combined first-principles calculations and experimental study

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Farzan Gity, Fintan Meaney, Anya Curran, Paul K. Hurley, Stephen Fahy, Ray Duffy, Lida Ansari
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 015701 (2021)
https://doi.org/10.1063/5.0035693
Published: January 2021
View articletitled, Doping of ultra-thin Si films: Combined first-principles calculations and experimental study
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Includes: Supplementary data
Journal Articles

Correlation between bonding, vacancy migration mechanisms, and creep in model binary and ternary hcp-Mg solid solutions

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Priyanvada Paranjape, S. G. Srinivasan, Deep Choudhuri
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 145103 (2020)
https://doi.org/10.1063/5.0018600
Published: October 2020
View articletitled, Correlation between bonding, vacancy migration mechanisms, and creep in model binary and ternary hcp-Mg solid solutions
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Journal Articles

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

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V. Meyers, E. Rocco, T. J. Anderson, J. C. Gallagher, M. A. Ebrish, K. Jones, M. Derenge, M. Shevelev, V. Sklyar, K. Hogan, B. McEwen, F. Shahedipour-Sandvik
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 085701 (2020)
https://doi.org/10.1063/5.0016358
Published: August 2020
View articletitled, p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
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Journal Articles

Structural relaxation of nanocrystalline PdAu alloy: Mapping pathways through the potential energy landscape

Open Access
Michael Johannes Deckarm, Nils Boussard, Christian Braun, Rainer Birringer
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 125115 (2020)
https://doi.org/10.1063/1.5141525
Published: March 2020
View articletitled, Structural relaxation of nanocrystalline PdAu alloy: Mapping pathways through the potential energy landscape
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Journal Articles

Structural relaxation of nanocrystalline PdAu alloy: Probing the spectrum of potential barriers

Open Access
Michael Johannes Deckarm, Christian Braun, Rainer Birringer
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 205102 (2019)
https://doi.org/10.1063/1.5121520
Published: November 2019
View articletitled, Structural relaxation of nanocrystalline PdAu alloy: Probing the spectrum of potential barriers
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Journal Articles

Electrically active boron doping in the core of Si nanocrystals by planar inductively coupled plasma CVD

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Chandralina Patra, Debajyoti Das
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 155305 (2019)
https://doi.org/10.1063/1.5082721
Published: October 2019
View articletitled, Electrically active boron doping in the core of Si nanocrystals by planar inductively coupled plasma CVD
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Journal Articles

Broad tunability of emission wavelength by strain coupled InAs/GaAs1 − xSbx quantum dot heterostructures

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Jhuma Saha, Debabrata Das, Debiprasad Panda, Binita Tongbram, Arka Chatterjee, Baolai Liang, Kantimay Das Gupta, Samir Kumar Pal, Subhananda Chakrabarti
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 154302 (2019)
https://doi.org/10.1063/1.5108949
Published: October 2019
View articletitled, Broad tunability of emission wavelength by strain coupled InAs/GaAs1 − xSbx quantum dot heterostructures
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Journal Articles

Defect energy levels in carbon implanted n-type homoepitaxial GaN

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G. Alfieri, V. K. Sundaramoorthy
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 125301 (2019)
https://doi.org/10.1063/1.5109237
Published: September 2019
View articletitled, Defect energy levels in carbon implanted n-type homoepitaxial GaN
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Journal Articles

Thermochemical characterization of Zr/Fe2O3 pyrotechnic mixture under natural aging conditions

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Byung Heon Han, Yoocheon Kim, Seung-gyo Jang, Jeayong Yoo, Jack J. Yoh
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 105113 (2019)
https://doi.org/10.1063/1.5096803
Published: September 2019
View articletitled, Thermochemical characterization of Zr/Fe2O3 pyrotechnic mixture under natural aging conditions
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Journal Articles

Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars

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Daniele Gastaldo, Nikita Strelkov, Liliana D. Buda-Prejbeanu, Bernard Dieny, Olivier Boulle, Paolo Allia, Paola Tiberto
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 103905 (2019)
https://doi.org/10.1063/1.5109484
Published: September 2019
View articletitled, Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars
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Includes: Supplementary data
Journal Articles

Electrical conduction and dielectric relaxation mechanisms in the KNN-based ceramics

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Xiaozhi Wang, Yu Huan, Zhenxing Wang, Xiujuan Lin, Shifeng Huang, Tao Wei, Longtu Li, Xiaohui Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 104101 (2019)
https://doi.org/10.1063/1.5110582
Published: September 2019
View articletitled, Electrical conduction and dielectric relaxation mechanisms in the KNN-based ceramics
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Includes: Supplementary data
Journal Articles

Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties

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Shin-ichiro Sato (佐藤 真一郎), Takuma Narahara (楢原 拓真), Yuta Abe (阿部 裕太), Yasuto Hijikata (土方 泰斗), Takahide Umeda (梅田 享英), Takeshi Ohshima (大島 武)
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 083105 (2019)
https://doi.org/10.1063/1.5099327
Published: August 2019
View articletitled, Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
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Journal Articles

Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates

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Zon, Supachok Thainoi, Suwit Kiravittaya, Aniwat Tandaechanurat, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 084301 (2019)
https://doi.org/10.1063/1.5097261
Published: August 2019
View articletitled, Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates
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Journal Articles

Cesium desorption mechanism in Cs0.33WO3 by first-principles molecular dynamics calculations

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Satoshi Yoshio, Kenji Adachi, Momoji Kubo
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 073101 (2019)
https://doi.org/10.1063/1.5097416
Published: August 2019
View articletitled, Cesium desorption mechanism in Cs0.33WO3 by first-principles molecular dynamics calculations
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