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Journal Articles

Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy

S. Usami, R. Higashiyama, M. Imanishi, J. Takino, T. Sumi, Y. Okayama, M. Yoshimura, M. Hata, M. Isemura, Y. Mori
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 085103 (2024)
https://doi.org/10.1063/5.0211640
Published: August 2024
View article titled, Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy
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Journal Articles

Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

Editor’s Pick
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 225702 (2024)
https://doi.org/10.1063/5.0199961
Published: June 2024
View article titled, Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
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Journal Articles

Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing

Yuki Ogawa, Ryota Akaike, Jiei Hayama, Kenjiro Uesugi, Kanako Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 193106 (2024)
https://doi.org/10.1063/5.0202824
Published: May 2024
View article titled, Crystal orientation control of <em>a</em>-plane AlN films on <em>r</em>-plane sapphire fabricated by sputtering and high-temperature annealing
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Journal Articles

Synchrotron radiation x-ray topography applied to nitride semiconductor crystals

Qirui Zhang, Songyang Lv, Lei Liu, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Lingshuang Lv, Xiangang Xu, Lei Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 180701 (2024)
https://doi.org/10.1063/5.0199146
Published: May 2024
View article titled, Synchrotron radiation x-ray topography applied to nitride semiconductor crystals
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Journal Articles

Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride

Kenji Hirata, Yu Ikemoto, Masato Uehara, Hiroshi Yamada, Sri Ayu Anggraini, Morito Akiyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 164101 (2024)
https://doi.org/10.1063/5.0191816
Published: April 2024
View article titled, Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride
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Journal Articles

Predictions of thorium super nitrides and superconductivity under pressure: Ab initio calculations

B. D. Sahoo, K. D. Joshi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165901 (2024)
https://doi.org/10.1063/5.0206354
Published: April 2024
View article titled, Predictions of thorium super nitrides and superconductivity under pressure: <em>Ab initio</em> calculations
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Journal Articles

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

M. Yassine, A. Yassine, A. Nair, B. Sundarapandian, N. Afshar, L. Kirste, S. Fichtner, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 155702 (2024)
https://doi.org/10.1063/5.0190885
Published: April 2024
View article titled, Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures
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Journal Articles

Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting

Jacob J. Cordell, Stephan Lany, M. Brooks Tellekamp
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 075001 (2024)
https://doi.org/10.1063/5.0187547
Published: February 2024
View article titled, Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N<sub>2</sub> on structure, elastic moduli, and polarization for solid state lighting
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Journal Articles

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Stefan Wolter, Steffen Bornemann, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045702 (2024)
https://doi.org/10.1063/5.0181278
Published: January 2024
View article titled, The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes
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Journal Articles

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Henryk Turski, Mikolaj Chlipala, Ewelina Zdanowicz, Ernest Rogowicz, Grzegorz Muziol, Joanna Moneta, Szymon Grzanka, Marcin Kryśko, Marcin Syperek, Robert Kudrawiec, Czeslaw Skierbiszewski
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 243105 (2023)
https://doi.org/10.1063/5.0177614
Published: December 2023
View article titled, Competition between built-in polarization and p–n junction field in III-nitride heterostructures
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Journal Articles

Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

Balasubramanian Sundarapandian, Ali Yassine, Lutz Kirste, Martina Baeumler, Patrik Straňák, Evelin Fisslthaler, Mario Prescher, Mohamed Yassine, Akash Nair, Mohit Raghuwanshi, Oliver Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 185107 (2023)
https://doi.org/10.1063/5.0171167
Published: November 2023
View article titled, Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
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Journal Articles

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Sean Knight, Steffen Richter, Alexis Papamichail, Philipp Kühne, Nerijus Armakavicius, Shiqi Guo, Axel R. Persson, Vallery Stanishev, Viktor Rindert, Per O. Å. Persson, Plamen P. Paskov, Mathias Schubert, Vanya Darakchieva
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 185701 (2023)
https://doi.org/10.1063/5.0163754
Published: November 2023
View article titled, Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>N/GaN heterostructures (0.07 ≤ <em>x</em> ≤ 0.42)
Open the PDF for Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>N/GaN heterostructures (0.07 ≤ <em>x</em> ≤ 0.42) in another window
Includes: Supplementary data
Journal Articles

Industrial application potential of high power impulse magnetron sputtering for wear and corrosion protection coatings

Joerg Vetter, Tetsuhide Shimizu, Denis Kurapov, Tomoya Sasaki, Juergen Mueller, Dominic Stangier, Markus Esselbach
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 160701 (2023)
https://doi.org/10.1063/5.0159292
Published: October 2023
View article titled, Industrial application potential of high power impulse magnetron sputtering for wear and corrosion protection coatings
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Journal Articles

Silicon diffusion in AlN

V. Bonito Oliva, D. Mangelinck, S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann, P. Vennéguès, M. Albrecht
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095103 (2023)
https://doi.org/10.1063/5.0159641
Published: September 2023
View article titled, Silicon diffusion in AlN
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Journal Articles

Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)

Johanna Meier, Patrick Häuser, Christian Blumberg, Tim Smola, Werner Prost, Nils Weimann, Gerd Bacher
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 044303 (2023)
https://doi.org/10.1063/5.0153713
Published: July 2023
View article titled, Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)
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Includes: Supplementary data
Journal Articles

Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, Peter Ramvall
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 035701 (2023)
https://doi.org/10.1063/5.0139114
Published: July 2023
View article titled, Acceptor activation of Mg-doped GaN—Effects of N<sub>2</sub>/O<sub>2</sub> vs N<sub>2</sub> as ambient gas during annealing
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Includes: Supplementary data
Journal Articles

Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing

Lukas Peters, Dmitry Sergeev, Christoph Margenfeld, Michael Müller, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 235704 (2023)
https://doi.org/10.1063/5.0152054
Published: June 2023
View article titled, Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing
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Journal Articles

Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185701 (2023)
https://doi.org/10.1063/5.0147667
Published: May 2023
View article titled, Origins of epitaxial macro-terraces and macro-steps on GaN substrates
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Journal Articles

Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates

Momoko Deura, Takuya Nakahara, Wan Chi Lee, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 165301 (2023)
https://doi.org/10.1063/5.0143985
Published: April 2023
View article titled, Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
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Journal Articles

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 143101 (2023)
https://doi.org/10.1063/5.0142035
Published: April 2023
View article titled, Low-efficiency-droop <em>c</em>-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers
Open the PDF for Low-efficiency-droop <em>c</em>-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers in another window
Includes: Supplementary data