1-20 of 1026
Nitrides
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Approach to improving the energy efficiency of thermoelectric coolers for IR detectors

Open Access
L. Vikhor, V. Lysko, M. Kotsur, M. Havrylyuk
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 094503 (2025)
https://doi.org/10.1063/5.0255434
Published: March 2025
View article titled, Approach to improving the energy efficiency of thermoelectric coolers for IR detectors
Open the PDF for Approach to improving the energy efficiency of thermoelectric coolers for IR detectors in another window
Journal Articles

Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas

Open Access
Joseph E. Dill, Chuan F. C. Chang, Debdeep Jena, Huili Grace Xing
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 025702 (2025)
https://doi.org/10.1063/5.0248998
Published: January 2025
View article titled, Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas
Open the PDF for Two-carrier model-fitting of Hall effect in semiconductors with dual-band occupation: A case study in GaN two-dimensional hole gas in another window
Journal Articles

Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging

Open Access
Stefan Wolter, Vladislav Agluschewitsch, Silke Wolter, Frederik Lüßmann, Christoph Margenfeld, Georg Schöttler, Jana Hartmann, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245703 (2024)
https://doi.org/10.1063/5.0243841
Published: December 2024
View article titled, Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging
Open the PDF for Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging in another window
Journal Articles

Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing

Open Access
Stefan Kosanovic, Kai Sun, Ashley Jian, Xin Zhai, Umesh Mishra, Elaheh Ahmadi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 235703 (2024)
https://doi.org/10.1063/5.0232477
Published: December 2024
View article titled, Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing
Open the PDF for Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing in another window
Journal Articles

Desorption kinetics of indium adlayers on GaN(0001): Fractional order and non-monotonic behavior

Open Access
L. Lymperakis, K. Lymperakis, E. Iliopoulos
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 215701 (2024)
https://doi.org/10.1063/5.0240751
Published: December 2024
View article titled, Desorption kinetics of indium adlayers on GaN(0001): Fractional order and non-monotonic behavior
Open the PDF for Desorption kinetics of indium adlayers on GaN(0001): Fractional order and non-monotonic behavior in another window
Journal Articles

Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy

Open Access
Muzafar Ahmad Rather, Shao-Hsiang Hsu, Chih-Chieh Lin, Yen-Huang Tien, Chien-Ting Wu, Tung-Yuan Yu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195301 (2024)
https://doi.org/10.1063/5.0230671
Published: November 2024
View article titled, Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy
Open the PDF for Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy in another window
Journal Articles

Electrical and structural characterization of YAlN at high alloy concentrations

Open Access
N. Afshar, M. Yassine, A. Yassine, N. Maier, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 185103 (2024)
https://doi.org/10.1063/5.0241907
Published: November 2024
View article titled, Electrical and structural characterization of YAlN at high alloy concentrations
Open the PDF for Electrical and structural characterization of YAlN at high alloy concentrations in another window
Journal Articles

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Open Access
Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 164501 (2024)
https://doi.org/10.1063/5.0228156
Published: October 2024
View article titled, Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis
Open the PDF for Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis in another window
Journal Articles

Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy

Open Access
S. Usami, R. Higashiyama, M. Imanishi, J. Takino, T. Sumi, Y. Okayama, M. Yoshimura, M. Hata, M. Isemura, Y. Mori
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 085103 (2024)
https://doi.org/10.1063/5.0211640
Published: August 2024
View article titled, Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy
Open the PDF for Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy in another window
Journal Articles

Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

Editor’s PickOpen Access
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 225702 (2024)
https://doi.org/10.1063/5.0199961
Published: June 2024
View article titled, Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
Open the PDF for Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction in another window
Journal Articles

Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing

Open Access
Yuki Ogawa, Ryota Akaike, Jiei Hayama, Kenjiro Uesugi, Kanako Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 193106 (2024)
https://doi.org/10.1063/5.0202824
Published: May 2024
View article titled, Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing
Open the PDF for Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing in another window
Journal Articles

Synchrotron radiation x-ray topography applied to nitride semiconductor crystals

Open Access
Qirui Zhang, Songyang Lv, Lei Liu, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Lingshuang Lv, Xiangang Xu, Lei Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 180701 (2024)
https://doi.org/10.1063/5.0199146
Published: May 2024
View article titled, Synchrotron radiation x-ray topography applied to nitride semiconductor crystals
Open the PDF for Synchrotron radiation x-ray topography applied to nitride semiconductor crystals in another window
Journal Articles

Predictions of thorium super nitrides and superconductivity under pressure: Ab initio calculations

Open Access
B. D. Sahoo, K. D. Joshi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165901 (2024)
https://doi.org/10.1063/5.0206354
Published: April 2024
View article titled, Predictions of thorium super nitrides and superconductivity under pressure: Ab initio calculations
Open the PDF for Predictions of thorium super nitrides and superconductivity under pressure: Ab initio calculations in another window
Journal Articles

Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride

Open Access
Kenji Hirata, Yu Ikemoto, Masato Uehara, Hiroshi Yamada, Sri Ayu Anggraini, Morito Akiyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 164101 (2024)
https://doi.org/10.1063/5.0191816
Published: April 2024
View article titled, Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride
Open the PDF for Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride in another window
Journal Articles

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

Open Access
M. Yassine, A. Yassine, A. Nair, B. Sundarapandian, N. Afshar, L. Kirste, S. Fichtner, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 155702 (2024)
https://doi.org/10.1063/5.0190885
Published: April 2024
View article titled, Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures
Open the PDF for Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures in another window
Journal Articles

A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride

Open Access
Erik S. Cheng, Peter L. G. Ventzek, Gyeong S. Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 095305 (2024)
https://doi.org/10.1063/5.0180299
Published: March 2024
View article titled, A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride
Open the PDF for A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride in another window
Journal Articles

Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting

Open Access
Jacob J. Cordell, Stephan Lany, M. Brooks Tellekamp
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 075001 (2024)
https://doi.org/10.1063/5.0187547
Published: February 2024
View article titled, Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting
Open the PDF for Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting in another window
Journal Articles

Unusual tilted growth and epitaxial relationship of NaCl B1-structured NiO and CrN on r-plane Al2O3

Open Access
Faezeh A. F. Lahiji, Biplab Paul, Arnaud le Febvrier, Per Eklund
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 065302 (2024)
https://doi.org/10.1063/5.0188559
Published: February 2024
View article titled, Unusual tilted growth and epitaxial relationship of NaCl B1-structured NiO and CrN on r-plane Al2O3
Open the PDF for Unusual tilted growth and epitaxial relationship of NaCl B1-structured NiO and CrN on r-plane Al2O3 in another window
Journal Articles

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Open Access
Stefan Wolter, Steffen Bornemann, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045702 (2024)
https://doi.org/10.1063/5.0181278
Published: January 2024
View article titled, The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes
Open the PDF for The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes in another window
Journal Articles

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Open Access
Henryk Turski, Mikolaj Chlipala, Ewelina Zdanowicz, Ernest Rogowicz, Grzegorz Muziol, Joanna Moneta, Szymon Grzanka, Marcin Kryśko, Marcin Syperek, Robert Kudrawiec, Czeslaw Skierbiszewski
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 243105 (2023)
https://doi.org/10.1063/5.0177614
Published: December 2023
View article titled, Competition between built-in polarization and p–n junction field in III-nitride heterostructures
Open the PDF for Competition between built-in polarization and p–n junction field in III-nitride heterostructures in another window