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Journal Articles

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

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Rigo A. Carrasco, Christian P. Morath, Perry C. Grant, Gamini Ariyawansa, Chad A. Stephenson, Clark N. Kadlec, Samuel D. Hawkins, John F. Klem, Eric A. Shaner, Elizabeth H. Steenbergen, Stephen T. Schaefer, Shane R. Johnson, Preston T. Webster
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 184501 (2021)
https://doi.org/10.1063/5.0047178
Published: May 2021
View articletitled, Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
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Journal Articles

Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications

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Jinal Tapar, Saurabh Kishen, Kumar Prashant, Kaushik Nayak, Naresh Kumar Emani
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 153102 (2020)
https://doi.org/10.1063/1.5132613
Published: April 2020
View articletitled, Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications
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Includes: Supplementary data
Journal Articles

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

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M. W. Gerber, R. N. Kleiman
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 095705 (2017)
https://doi.org/10.1063/1.5001128
Published: September 2017
View articletitled, Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay
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Journal Articles

Charge transfer at organic-inorganic interfaces—Indoline layers on semiconductor substrates

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I. Meyenburg, J. Falgenhauer, N. W. Rosemann, S. Chatterjee, D. Schlettwein, W. Heimbrodt
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 215502 (2016)
https://doi.org/10.1063/1.4969041
Published: December 2016
View articletitled, Charge transfer at organic-inorganic interfaces—Indoline layers on semiconductor substrates
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Includes: Supplementary data
Journal Articles

Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

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J. Kundrotas, A. Čerškus, G. Valušis, L. H. Li, E. H. Linfield, A. Johannessen, E. Johannessen
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 043105 (2012)
https://doi.org/10.1063/1.4745893
Published: August 2012
View articletitled, Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition
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Journal Articles

Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells

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A. Giorgioni, E. Gatti, E. Grilli, A. Chernikov, S. Chatterjee, D. Chrastina, G. Isella, M. Guzzi
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 013501 (2012)
https://doi.org/10.1063/1.3673271
Published: January 2012
View articletitled, Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells
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Journal Articles

Spatially resolved inhomogeneous depressions of the excitons Zeeman splitting in an integrated magnetic-multiple quantum wells system

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A. Abdelrahman, H. Kang, S. Y. Yim, M. Vasiliev, K. Alameh, Y. T. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 013710 (2011)
https://doi.org/10.1063/1.3603000
Published: July 2011
View articletitled, Spatially resolved inhomogeneous depressions of the excitons Zeeman splitting in an integrated magnetic-multiple quantum wells system
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Journal Articles

Measurement of the intersystem crossing rate in aluminum tris(8-hydroxyquinoline) and its modulation by an applied magnetic field

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Sijie Zhang, Jingyao Song, T. Kreouzis, W. P. Gillin
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 043511 (2009)
https://doi.org/10.1063/1.3204015
Published: August 2009
View articletitled, Measurement of the intersystem crossing rate in aluminum tris(8-hydroxyquinoline) and its modulation by an applied magnetic field
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Journal Articles

Carrier trapping effects on photoluminescence decay time in In Ga N ∕ Ga N quantum wells with nanocluster structures

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Yen-Cheng Lu, Cheng-Yen Chen, Hsiang-Chen Wang, C. C. Yang, Yung-Chen Cheng
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 063511 (2007)
https://doi.org/10.1063/1.2711148
Published: March 2007
View articletitled, Carrier trapping effects on photoluminescence decay time in In Ga N ∕ Ga N quantum wells with nanocluster structures
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Journal Articles

A unified decay formula for luminescence decays

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Byung Mook Weon, Jong-Lam Lee, Jung Ho Je
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 096101 (2005)
https://doi.org/10.1063/1.2126120
Published: November 2005
View articletitled, A unified decay formula for luminescence decays
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Journal Articles

Spectroscopy and recombination dynamics of In As ∕ Al As quantum dots

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P. Dawson, E. O. Göbel, K. Pierz
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 013541 (2005)
https://doi.org/10.1063/1.1941468
Published: July 2005
View articletitled, Spectroscopy and recombination dynamics of In As ∕ Al As quantum dots
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Journal Articles

Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure

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J. S. Massa, G. S. Buller, A. C. Walker
Journal: Journal of Applied Physics
J. Appl. Phys. 82, 712–717 (1997)
https://doi.org/10.1063/1.365603
Published: July 1997
View articletitled, Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure
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Journal Articles

Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well

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Wei Li, Peder Bergman, Bo Monemar, H. Amano, I. Akasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 81, 1005–1007 (1997)
https://doi.org/10.1063/1.364194
Published: January 1997
View articletitled, Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
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Journal Articles

Ultrafast carrier dynamics at a metal‐semiconductor interface

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P. C. M. Christianen, P. J. van Hall, H. J. A. Bluyssen, M. R. Leys, L. Drost, J. H. Wolter
Journal: Journal of Applied Physics
J. Appl. Phys. 80, 6831–6838 (1996)
https://doi.org/10.1063/1.363749
Published: December 1996
View articletitled, Ultrafast carrier dynamics at a metal‐semiconductor interface
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Journal Articles

Time‐resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique

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S. J. Fancey, G. S. Buller, J. S. Massa, A. C. Walker, C. J. McLean, A. McKee, A. C. Bryce, J. H. Marsh, R. M. De La Rue
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 9390–9392 (1996)
https://doi.org/10.1063/1.362573
Published: June 1996
View articletitled, Time‐resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique
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Journal Articles

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

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M. D. Sturge, Janet L. Mackay, Colette Maloney, J.K. Pribram
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 5639–5641 (1989)
https://doi.org/10.1063/1.343675
Published: December 1989
View articletitled, Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures
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Journal Articles

Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures

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P. Dawson, K. J. Moore, C. T. Foxon, G. W. ‘t Hooft, R. P. M. van Hal
Journal: Journal of Applied Physics
J. Appl. Phys. 65, 3606–3609 (1989)
https://doi.org/10.1063/1.342640
Published: May 1989
View articletitled, Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures
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