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Journal Articles

Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography

Zhiheng Lin, Yaoxun Wang, Yun-Ran Wang, Im Sik Han, Mark Hopkinson
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 123104 (2024)
https://doi.org/10.1063/5.0215529
Published: September 2024
View article titled, Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography
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Journal Articles

Spatially resolved luminescence properties of etched quantum well microstructures

J. P. Landesman, E. Diak, R. R. LaPierre, C. Levallois, S. Ghanad-Tavakoli
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 123102 (2024)
https://doi.org/10.1063/5.0225999
Published: September 2024
View article titled, Spatially resolved luminescence properties of etched quantum well microstructures
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Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 083103 (2024)
https://doi.org/10.1063/5.0227663
Published: August 2024
View article titled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
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Journal Articles

Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

Pengyan Wen, Huixin Xiu, Shuming Zhang, Jianping Liu, Yimeng Chen, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043103 (2024)
https://doi.org/10.1063/5.0215654
Published: July 2024
View article titled, Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography
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Journal Articles

Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface

Hanbin Zhang, Hancheng Wang, Jian Du, Wenhao Chen, Jin Wang, Junjun Xue, Ting Zhi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 023106 (2024)
https://doi.org/10.1063/5.0211495
Published: July 2024
View article titled, Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface
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Journal Articles

Alloy composition dependent built-in polarization fields and quantized carrier states in III-nitride multi-quantum well structures

Nikhil Ranjan Das, Moubani Bandyopadhyay
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 203105 (2024)
https://doi.org/10.1063/5.0203312
Published: May 2024
View article titled, Alloy composition dependent built-in polarization fields and quantized carrier states in III-nitride multi-quantum well structures
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Journal Articles

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

K. N. Schrock, D. A. Montealegre, W. Dai, M. Z. Bellus, L. M. Nichols, J. P. Prineas
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 183101 (2024)
https://doi.org/10.1063/5.0193624
Published: May 2024
View article titled, Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes
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Journal Articles

Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

Shintaro Komaba, Nana Taketa, Meita Asami, Masakazu Sugiyama, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 153103 (2024)
https://doi.org/10.1063/5.0176339
Published: April 2024
View article titled, Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements
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Journal Articles

Magnetic field-induced phase transition in spinor exciton-polaritons condensate

A. S. Abdalla, Suliman Alameen, K. Ayuel, Muhammad Sheraz Khan, Hajer Adam, Elsadig O. Fadol
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 124401 (2024)
https://doi.org/10.1063/5.0192393
Published: March 2024
View article titled, Magnetic field-induced phase transition in spinor exciton-polaritons condensate
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Journal Articles

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, M. Vladimirova
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 095702 (2024)
https://doi.org/10.1063/5.0182659
Published: March 2024
View article titled, Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
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Journal Articles

Chip-integrated optical fiber force sensing system

Kang Fu, Fan Shi, Binju Wang, Jianwei Fu, Jiabin Yan, Yongjin Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 234501 (2023)
https://doi.org/10.1063/5.0186220
Published: December 2023
View article titled, Chip-integrated optical fiber force sensing system
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Journal Articles

Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field

R. A. Coppeta, R. Fabbro, M. Pusterhofer, T. Haber, G. Fasching, D. Cooper
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 143105 (2023)
https://doi.org/10.1063/5.0145680
Published: April 2023
View article titled, Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field
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Journal Articles

Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells

Zhiming Shi, Aiqin Tian, Xiaojuan Sun, Xuan Li, Hang Zang, Xujun Su, Hao Lin, Peng Xu, Hui Yang, Jianping Liu, Dabing Li
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 123103 (2023)
https://doi.org/10.1063/5.0136104
Published: March 2023
View article titled, Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells
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Journal Articles

Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

Pankul Dhingra, Aaron J. Muhowski, Brian D. Li, Yukun Sun, Ryan D. Hool, Daniel Wasserman, Minjoo Larry Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 103101 (2023)
https://doi.org/10.1063/5.0136621
Published: March 2023
View article titled, Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy
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Journal Articles

Transport properties of magneto-excitations in integer and fractional quantum Hall insulators

A. V. Gorbunov, A. V. Larionov, L. V. Kulik, V. B. Timofeev
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 244301 (2022)
https://doi.org/10.1063/5.0127047
Published: December 2022
View article titled, Transport properties of magneto-excitations in integer and fractional quantum Hall insulators
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Journal Articles

Bipolar persistent photoconductivity in HgTe/CdHgTe double quantum well heterostructures and its application for reversible change in the conductivity type

Ilya Nikolaev, Aleksei Kazakov, Konstantin Drozdov, Mikhail Bannikov, Kirill Spirin, Roman Menshchikov, Sergey Dvoretsky, Nikolay Mikhailov, Dmitry Khokhlov, Anton Ikonnikov
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 234301 (2022)
https://doi.org/10.1063/5.0121364
Published: December 2022
View article titled, Bipolar persistent photoconductivity in HgTe/CdHgTe double quantum well heterostructures and its application for reversible change in the conductivity type
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Includes: Supplementary data
Journal Articles

Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Yifan Zhu, Huimin Lu, Jianping Wang, Tongjun Yu, Zizheng Li, Yucheng Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 225704 (2022)
https://doi.org/10.1063/5.0128213
Published: December 2022
View article titled, Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission
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Journal Articles

Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Boyang Lu, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lai Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 174505 (2022)
https://doi.org/10.1063/5.0106537
Published: November 2022
View article titled, Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes
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Journal Articles

Emerging materials and devices for efficient light generation

Shunsuke Murai, Russell J. Holmes, Jun Lin, Miguel Anaya, Gabriel Lozano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 160401 (2022)
https://doi.org/10.1063/5.0094210
Published: April 2022
View article titled, Emerging materials and devices for efficient light generation
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Journal Articles

Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates

Mitsuru Funato, Yoshinobu Matsuda, Keito Mori-Tamamura, Atsushi A. Yamaguchi, Hiroki Goto, Yasunobu Sumida, Yujiro Ishihara, Yoichi Kawakami
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 074502 (2022)
https://doi.org/10.1063/5.0081815
Published: February 2022
View article titled, Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates
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