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Journal Articles

Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field

R. A. Coppeta, R. Fabbro, M. Pusterhofer, T. Haber, G. Fasching, D. Cooper
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 143105 (2023)
https://doi.org/10.1063/5.0145680
Published: April 2023
View article titled, Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field
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Journal Articles

Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells

Zhiming Shi, Aiqin Tian, Xiaojuan Sun, Xuan Li, Hang Zang, Xujun Su, Hao Lin, Peng Xu, Hui Yang, Jianping Liu, Dabing Li
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 123103 (2023)
https://doi.org/10.1063/5.0136104
Published: March 2023
View article titled, Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells
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Journal Articles

Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

Pankul Dhingra, Aaron J. Muhowski, Brian D. Li, Yukun Sun, Ryan D. Hool, Daniel Wasserman, Minjoo Larry Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 103101 (2023)
https://doi.org/10.1063/5.0136621
Published: March 2023
View article titled, Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy
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Journal Articles

Transport properties of magneto-excitations in integer and fractional quantum Hall insulators

A. V. Gorbunov, A. V. Larionov, L. V. Kulik, V. B. Timofeev
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 244301 (2022)
https://doi.org/10.1063/5.0127047
Published: December 2022
View article titled, Transport properties of magneto-excitations in integer and fractional quantum Hall insulators
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Journal Articles

Bipolar persistent photoconductivity in HgTe/CdHgTe double quantum well heterostructures and its application for reversible change in the conductivity type

Ilya Nikolaev, Aleksei Kazakov, Konstantin Drozdov, Mikhail Bannikov, Kirill Spirin, Roman Menshchikov, Sergey Dvoretsky, Nikolay Mikhailov, Dmitry Khokhlov, Anton Ikonnikov
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 234301 (2022)
https://doi.org/10.1063/5.0121364
Published: December 2022
View article titled, Bipolar persistent photoconductivity in HgTe/CdHgTe double quantum well heterostructures and its application for reversible change in the conductivity type
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Includes: Supplementary data
Journal Articles

Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Yifan Zhu, Huimin Lu, Jianping Wang, Tongjun Yu, Zizheng Li, Yucheng Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 225704 (2022)
https://doi.org/10.1063/5.0128213
Published: December 2022
View article titled, Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission
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Journal Articles

Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Boyang Lu, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lai Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 174505 (2022)
https://doi.org/10.1063/5.0106537
Published: November 2022
View article titled, Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes
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Journal Articles

Emerging materials and devices for efficient light generation

Shunsuke Murai, Russell J. Holmes, Jun Lin, Miguel Anaya, Gabriel Lozano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 160401 (2022)
https://doi.org/10.1063/5.0094210
Published: April 2022
View article titled, Emerging materials and devices for efficient light generation
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Journal Articles

Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates

Mitsuru Funato, Yoshinobu Matsuda, Keito Mori-Tamamura, Atsushi A. Yamaguchi, Hiroki Goto, Yasunobu Sumida, Yujiro Ishihara, Yoichi Kawakami
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 074502 (2022)
https://doi.org/10.1063/5.0081815
Published: February 2022
View article titled, Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates
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Journal Articles

Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

Alessandro Caria, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 043102 (2022)
https://doi.org/10.1063/5.0079022
Published: January 2022
View article titled, Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence
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Journal Articles

Defect characterization of { 10 1 ¯ 3 } GaN by electron microscopy

Gunnar Kusch, Martin Frentrup, Nan Hu, Hiroshi Amano, Rachel A. Oliver, Markus Pristovsek
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 035705 (2022)
https://doi.org/10.1063/5.0077084
Published: January 2022
View article titled, Defect characterization of { 10 1 ¯ 3 } GaN by electron microscopy
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Includes: Supplementary data
Journal Articles

Surface phonon polaritons for infrared optoelectronics

Christopher R. Gubbin, Simone De Liberato, Thomas G. Folland
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 030901 (2022)
https://doi.org/10.1063/5.0064234
Published: January 2022
View article titled, Surface phonon polaritons for infrared optoelectronics
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Journal Articles

Piezo-phototronics in quantum well structures

Xinhuan Dai, Qilin Hua, Wei Sha, Jiangwen Wang, Weiguo Hu
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 010903 (2022)
https://doi.org/10.1063/5.0069663
Published: January 2022
View article titled, Piezo-phototronics in quantum well structures
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Journal Articles

Ensemble Monte Carlo modeling of quantum cascade detectors

Christian Jirauschek, Johannes Popp, Michael Haider, Martin Franckié, Jérôme Faist
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 203103 (2021)
https://doi.org/10.1063/5.0065540
Published: November 2021
View article titled, Ensemble Monte Carlo modeling of quantum cascade detectors
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Journal Articles

Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Xiaorui Wang, Tao Wang, Dapeng Yu, Shijie Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 205704 (2021)
https://doi.org/10.1063/5.0064466
Published: November 2021
View article titled, Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells
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Journal Articles

Optical coupling enhancement of multi-color terahertz quantum well detector

Xueqi Bai, Peng Bai, Xiaohong Li, Siheng Huang, Xinran Lian, Wenjun Song, Zhiwen Shi, Wenzhong Shen, Yueheng Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 203102 (2021)
https://doi.org/10.1063/5.0070519
Published: November 2021
View article titled, Optical coupling enhancement of multi-color terahertz quantum well detector
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Journal Articles

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

J. Yang, B. B. Wang, D. G. Zhao, Z. S. Liu, F. Liang, P. Chen, Y. H. Zhang, Z. Z. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 173105 (2021)
https://doi.org/10.1063/5.0069567
Published: November 2021
View article titled, Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers
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Journal Articles

Adlayer control for tunable AlGaN self-assembled superlattices

Zachary Engel, Evan A. Clinton, Keisuke Motoki, Habib Ahmad, Christopher M. Matthews, W. Alan Doolittle
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 165304 (2021)
https://doi.org/10.1063/5.0069534
Published: October 2021
View article titled, Adlayer control for tunable AlGaN self-assembled superlattices
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Journal Articles

Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant

Brandon Dzuba, Trang Nguyen, Yang Cao, Rosa E. Diaz, Michael J. Manfra, Oana Malis
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 105702 (2021)
https://doi.org/10.1063/5.0058154
Published: September 2021
View article titled, Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant
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Includes: Supplementary data
Journal Articles

Efficient third-harmonic generation in asymmetric InxGa1-xN/InN double quantum wells

Taher Zahedi, Zaker Hossein Firouzeh
Journal: