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Journal Articles

Identification of an upper limit to the laser pulse duration in photonic band-edge liquid crystal lasers

C. M. Brown, I. Pakamoryte, P. J. W. Hands
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 053103 (2025)
https://doi.org/10.1063/5.0246291
Published: February 2025
View articletitled, Identification of an upper limit to the laser pulse duration in photonic band-edge liquid crystal lasers
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Journal Articles

Electronic vs optical bandgap of stoichiometric V2O5: Effects of surface transfer doping and electron accumulation layer

Sangyeon Lee, Qi Wang, Vidhya Chakrapani
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 205101 (2024)
https://doi.org/10.1063/5.0233493
Published: November 2024
View articletitled, Electronic vs optical bandgap of stoichiometric V2O5: Effects of surface transfer doping and electron accumulation layer
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Journal Articles

Studying single-electron traps in newly fabricated Skipper-CCDs for the Oscura experiment using the pocket-pumping technique

Editor’s Pick
Santiago Ezequiel Perez Garcia, Brenda Aurea Cervantes Vergara, Juan Cruz Estrada, Stephen Holland, Dario Pablo Rodrigues Ferreira Maltez, Javier Tiffenberg
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 204502 (2024)
https://doi.org/10.1063/5.0232693
Published: November 2024
View articletitled, Studying single-electron traps in newly fabricated Skipper-CCDs for the Oscura experiment using the pocket-pumping technique
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Journal Articles

Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs

V. A. Shalygin, I. S. Makhov, R. B. Adamov, M. Ya. Vinnichenko, V. P. Khvostikov, D. A. Firsov
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195703 (2024)
https://doi.org/10.1063/5.0233573
Published: November 2024
View articletitled, Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs
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Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 083103 (2024)
https://doi.org/10.1063/5.0227663
Published: August 2024
View articletitled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
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Journal Articles

Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications

Anuja Singh, Bhaskaran Muralidharan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055703 (2024)
https://doi.org/10.1063/5.0218463
Published: August 2024
View articletitled, Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications
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Journal Articles

Atomic-like Autler–Townes splitting controlled by destructive and constructive natural non-Hermitian quantization in Eu3+: BiPO4

Muhammad Usman, Iqbal Hussain, Faisal Munir, Muhammad Kashif Majeed, Faisal Nadeem, Usman Javed, Qinyue Yang, Huanrong Fan, Yanpeng Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 243103 (2024)
https://doi.org/10.1063/5.0205501
Published: June 2024
View articletitled, Atomic-like Autler–Townes splitting controlled by destructive and constructive natural non-Hermitian quantization in Eu3+: BiPO4
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Journal Articles

Simultaneous observation of transverse and longitudinal photonic spin splitting in monolayer WSe2 via quantum weak measurement

Soumen Mandal, Akash Das, Manik Pradhan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 203103 (2024)
https://doi.org/10.1063/5.0208376
Published: May 2024
View articletitled, Simultaneous observation of transverse and longitudinal photonic spin splitting in monolayer WSe2 via quantum weak measurement
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Journal Articles

Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

Shintaro Komaba, Nana Taketa, Meita Asami, Masakazu Sugiyama, Tetsuo Ikari, Atsuhiko Fukuyama
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 153103 (2024)
https://doi.org/10.1063/5.0176339
Published: April 2024
View articletitled, Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements
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Journal Articles

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Stefan Wolter, Steffen Bornemann, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045702 (2024)
https://doi.org/10.1063/5.0181278
Published: January 2024
View articletitled, The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes
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Journal Articles

Exciton localization and dynamics in GaNAsP nanowires

M. Jansson, W. M. Chen, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 044303 (2024)
https://doi.org/10.1063/5.0179114
Published: January 2024
View articletitled, Exciton localization and dynamics in GaNAsP nanowires
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Journal Articles

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Henryk Turski, Mikolaj Chlipala, Ewelina Zdanowicz, Ernest Rogowicz, Grzegorz Muziol, Joanna Moneta, Szymon Grzanka, Marcin Kryśko, Marcin Syperek, Robert Kudrawiec, Czeslaw Skierbiszewski
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 243105 (2023)
https://doi.org/10.1063/5.0177614
Published: December 2023
View articletitled, Competition between built-in polarization and p–n junction field in III-nitride heterostructures
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Journal Articles

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

A. T. Newell, J. V. Logan, R. A. Carrasco, C. P. Hains, G. Ariyawansa, J. M. Duran, G. Balakrishnan, D. Maestas, C. P. Morath, P. T. Webster
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 144501 (2023)
https://doi.org/10.1063/5.0169264
Published: October 2023
View articletitled, Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors
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Journal Articles

Energy transfer assisted plasmonic random laser emission from polymer optical fiber

B. Anugop, V. P. N. Nampoori, M. Kailasnath
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 133104 (2023)
https://doi.org/10.1063/5.0156643
Published: October 2023
View articletitled, Energy transfer assisted plasmonic random laser emission from polymer optical fiber
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Journal Articles

Long-lasting deformation potential effect in Ge induced by UV photoexcitation

R. Rathore, H. Singhal, C. Kamal, J. A. Chakera
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 035101 (2023)
https://doi.org/10.1063/5.0155986
Published: July 2023
View articletitled, Long-lasting deformation potential effect in Ge induced by UV photoexcitation
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Includes: Supplementary data
Journal Articles

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

Takeyoshi Onuma, Kanta Kudo, Mizuki Ono, Wataru Kosaka, Kohei Shima, Kyohei Ishii, Kentaro Kaneko, Yuichi Ota, Tomohiro Yamaguchi, Kazunobu Kojima, Shizuo Fujita, Shigefusa F. Chichibu, Tohru Honda
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 025102 (2023)
https://doi.org/10.1063/5.0155269
Published: July 2023
View articletitled, Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO
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Journal Articles

MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Nrita Gaur, Gangadhar S. Banappanavar, Dinesh Kabra
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 025501 (2023)
https://doi.org/10.1063/5.0152626
Published: July 2023
View articletitled, MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices
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Journal Articles

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, S. F. Chichibu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 163102 (2022)
https://doi.org/10.1063/5.0106540
Published: October 2022
View articletitled, Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)
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Journal Articles

Photoexcited carrier dynamics in semi-insulating 4H-SiC by Raman spectroscopy

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Meng-meng Gao, Liu-yan Fan, Xiao-ye Gong, Jing-lin You, Zhi-zhan Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 135702 (2022)
https://doi.org/10.1063/5.0108903
Published: October 2022
View articletitled, Photoexcited carrier dynamics in semi-insulating 4H-SiC by Raman spectroscopy
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Journal Articles

Pressure-dependent photoluminescence of Eu-activated aluminate hydride Sr3−xAxAlO4H:Eu2+ (A = Ca, Ba; x = 0, 1): Application of advanced U-determination technique for luminescence wavelength prediction

Tong Wu, Hansen Hua, Jumpei Ueda, Setsuhisa Tanabe, Satoru Matsuishi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 083104 (2022)
https://doi.org/10.1063/5.0102219
Published: August 2022
View articletitled, Pressure-dependent photoluminescence of Eu-activated aluminate hydride Sr3−xAxAlO4H:Eu2+ (A = Ca, Ba; x = 0, 1): Application of advanced U-determination technique for luminescence wavelength prediction
Open the PDF for Pressure-dependent photoluminescence of Eu-activated aluminate hydride Sr3−xAxAlO4H:Eu2+ (A = Ca, Ba; x = 0, 1): Application of advanced U-determination technique for luminescence wavelength prediction in another window
Includes: Supplementary data