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Journal Articles

High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Yangfan Li, Longfei Xiao, Chongbiao Luan, Yan Qin, Xun Sun, Huiru Sha, Jian Jiao, Xiufang Chen, Hongtao Li, Xiangang Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235702 (2024)
https://doi.org/10.1063/5.0197027
Published: June 2024
View article titled, High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate
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Journal Articles

Solid–liquid heterojunction UV photoelectrochemical photodetector based on WO3 nanosheets and acidic electrolyte

Chaoqian Han, Lin Zhang, Yuanze Meng, Liying Wang, Xijia Yang, Xuesong Li, Yang Gao, Wei Lü
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 215702 (2024)
https://doi.org/10.1063/5.0206333
Published: June 2024
View article titled, Solid–liquid heterojunction UV photoelectrochemical photodetector based on WO<sub>3</sub> nanosheets and acidic electrolyte
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Journal Articles

Chip-integrated optical fiber force sensing system

Kang Fu, Fan Shi, Binju Wang, Jianwei Fu, Jiabin Yan, Yongjin Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 234501 (2023)
https://doi.org/10.1063/5.0186220
Published: December 2023
View article titled, Chip-integrated optical fiber force sensing system
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Journal Articles

Bound states in the continuum (BIC) in silicon nanodisk array on mirror structure: Perfect absorption associated with quasi-BIC below the bandgap

Keisuke Moriasa, Hiroaki Hasebe, Hiroshi Sugimoto, Minoru Fujii
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 173102 (2023)
https://doi.org/10.1063/5.0146896
Published: May 2023
View article titled, Bound states in the continuum (BIC) in silicon nanodisk array on mirror structure: Perfect absorption associated with quasi-BIC below the bandgap
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Includes: Supplementary data
Journal Articles

Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes

Hoon Jeong, Minkyu Cho, Zhiyu Xu, Frank Mehnke, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Nepomuk Otte, Russell D. Dupuis
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 103102 (2022)
https://doi.org/10.1063/5.0073515
Published: March 2022
View article titled, Breakdown characteristics of deep-ultraviolet Al<sub>0.6</sub>Ga<sub>0.4</sub>N p-i-n avalanche photodiodes
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Journal Articles

Optical coupling enhancement of multi-color terahertz quantum well detector

Xueqi Bai, Peng Bai, Xiaohong Li, Siheng Huang, Xinran Lian, Wenjun Song, Zhiwen Shi, Wenzhong Shen, Yueheng Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 203102 (2021)
https://doi.org/10.1063/5.0070519
Published: November 2021
View article titled, Optical coupling enhancement of multi-color terahertz quantum well detector
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Journal Articles

Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination

Takafumi Fujita, Ryota Hayashi, Makoto Kohda, Julian Ritzmann, Arne Ludwig, Junsaku Nitta, Andreas D. Wieck, Akira Oiwa
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 234301 (2021)
https://doi.org/10.1063/5.0047558
Published: June 2021
View article titled, Distinguishing persistent effects in an undoped GaAs/AlGaAs quantum well by top-gate-dependent illumination
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Journal Articles

Terahertz emission from a bulk GaSe crystal excited by above bandgap photons

R. Norkus, I. Nevinskas, A. Krotkus
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 225701 (2020)
https://doi.org/10.1063/5.0027944
Published: December 2020
View article titled, Terahertz emission from a bulk GaSe crystal excited by above bandgap photons
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Journal Articles

A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors

Samiran Ganguly, Moon-Hyung Jang, Yaohua Tan, Sung-Shik Yoo, Mool C. Gupta, Avik W. Ghosh
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 143103 (2019)
https://doi.org/10.1063/1.5087818
Published: October 2019
View article titled, A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors
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Journal Articles

Highly responsive graphene phototransistor for visible light enhanced by poly(3-hexylthiophene)

Che Yongli, Cao Xiaolong, Zhang Yating, Yao Jianquan
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 193102 (2019)
https://doi.org/10.1063/1.5081506
Published: May 2019
View article titled, Highly responsive graphene phototransistor for visible light enhanced by poly(3-hexylthiophene)
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Journal Articles

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Piotr M. Mensz, Ben Dror, Akhil Ajay, Catherine Bougerol, Eva Monroy, Meir Orenstein, Gad Bahir
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 174505 (2019)
https://doi.org/10.1063/1.5079408
Published: May 2019
View article titled, Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature
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Journal Articles

Achieving balance of valley occupancy in narrow AlAs quantum wells

A. R. Khisameeva, A. V. Shchepetilnikov, V. M. Muravev, S. I. Gubarev, D. D. Frolov, Yu. A. Nefyodov, I. V. Kukushkin, C. Reichl, W. Dietsche, W. Wegscheider
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 154501 (2019)
https://doi.org/10.1063/1.5079511
Published: April 2019
View article titled, Achieving balance of valley occupancy in narrow AlAs quantum wells
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Journal Articles

Photogating and high gain in ReS2 field-effect transistors

Editor’s Pick
C. Garcia, N. R. Pradhan, D. Rhodes, L. Balicas, S. A. McGill
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 204306 (2018)
https://doi.org/10.1063/1.5050821
Published: November 2018
View article titled, Photogating and high gain in ReS<sub>2</sub> field-effect transistors
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Journal Articles

Effect of morphology on optical and efficiently enhanced electrical properties of W-ZnS for UV sensor applications

Neena Prasad, Karthikeyan Balasubramanian
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 045702 (2018)
https://doi.org/10.1063/1.5040433
Published: July 2018
View article titled, Effect of morphology on optical and efficiently enhanced electrical properties of W-ZnS for UV sensor applications
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Journal Articles

Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias

P. K. Chang, J. G. Hwu
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 024503 (2018)
https://doi.org/10.1063/1.5044678
Published: July 2018
View article titled, Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO<sub>2</sub>/SiC tunnel diode structure with low gate bias
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Journal Articles

Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements

Wolf-Alexander Quitsch, Daniel Sager, Moritz Loewenich, Tobias Meyer, Berthold Hahn, Gerd Bacher
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 214502 (2018)
https://doi.org/10.1063/1.5022026
Published: May 2018
View article titled, Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements
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Journal Articles

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

Y. Zhou, D. S. Ang, P. S. Kalaga
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161555 (2018)
https://doi.org/10.1063/1.5002606
Published: January 2018
View article titled, Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study
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Journal Articles

Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis

E. E. Perl, D. Kuciauskas, J. Simon, D. J. Friedman, M. A. Steiner
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 233102 (2017)
https://doi.org/10.1063/1.5003631
Published: December 2017
View article titled, Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis
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Journal Articles

Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity

C. R. Engst, M. Rommel, C. Bscheid, I. Eisele, C. Kutter
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 215704 (2017)
https://doi.org/10.1063/1.4993127
Published: December 2017
View article titled, Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity
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Journal Articles

CaFe2O4 as a self-sufficient solar energy converter

C. Tablero
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 133114 (2017)
https://doi.org/10.1063/1.4993537
Published: October 2017
View article titled, CaFe<sub>2</sub>O<sub>4</sub> as a self-sufficient solar energy converter
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