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Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius

J. Appl. Phys. 136, 083103 (2024)

https://doi.org/10.1063/5.0227663

Published: August 2024

View article titled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Journal Articles

Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface

Hanbin Zhang, Hancheng Wang, Jian Du, Wenhao Chen, Jin Wang, Junjun Xue, Ting Zhi

J. Appl. Phys. 136, 023106 (2024)

https://doi.org/10.1063/5.0211495

Published: July 2024

View article titled, Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface

Journal Articles

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

K. N. Schrock, D. A. Montealegre, W. Dai, M. Z. Bellus, L. M. Nichols, J. P. Prineas

J. Appl. Phys. 135, 183101 (2024)

https://doi.org/10.1063/5.0193624

Published: May 2024

View article titled, Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

Journal Articles

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

L. Sun, P. Kruszewski, V. P. Markevich, C. A. Dawe, A. R. Peaker, I. F. Crowe, J. Plesiewicz, P. Prystawko, Sz. Grzanka, E. Grzanka, R. Jakiela, D. Binks, M. P. Halsall

J. Appl. Phys. 135, 175702 (2024)

https://doi.org/10.1063/5.0205998

Published: May 2024

View article titled, The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal Articles

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Stefan Wolter, Steffen Bornemann, Andreas Waag

J. Appl. Phys. 135, 045702 (2024)

https://doi.org/10.1063/5.0181278

Published: January 2024

View article titled, The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Journal Articles

Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED

Xi Bao, Yunxia Guan, Wanjiao Li, Jiayi Song, Lijia Chen, Cheng Wang, Shuang Xu, Keao Peng, Lianbin Niu

J. Appl. Phys. 134, 193902 (2023)

https://doi.org/10.1063/5.0173874

Published: November 2023

View article titled, Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED

Includes: Supplementary data

Journal Articles

MgF₂ as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Nrita Gaur, Gangadhar S. Banappanavar, Dinesh Kabra

J. Appl. Phys. 134, 025501 (2023)

https://doi.org/10.1063/5.0152626

Published: July 2023

View article titled, MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Journal Articles

Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector

Xiaoyu Zhao, Yuechang Sun, Lang Shi, Shengjun Zhou

J. Appl. Phys. 133, 235703 (2023)

https://doi.org/10.1063/5.0152951

Published: June 2023

View article titled, Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector

Journal Articles

Photoluminescence performance of BaAl₂O₄:Eu²⁺ cyan phosphor ceramics

Xiaomeng Yin, Yanna Tian, Jie Chen, Xuezhuan Yi, Renjie Jiang, Dawei Zhang, Hui Lin, Shengming Zhou, Sachuronggui Bai

J. Appl. Phys. 133, 175105 (2023)

https://doi.org/10.1063/5.0148978

Published: May 2023

View article titled, Photoluminescence performance of BaAl2O4:Eu2+ cyan phosphor ceramics

Journal Articles

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck

J. Appl. Phys. 133, 143101 (2023)

https://doi.org/10.1063/5.0142035

Published: April 2023

View article titled, Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Includes: Supplementary data

Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar

J. Appl. Phys. 133, 104302 (2023)

https://doi.org/10.1063/5.0139599

Published: March 2023

View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Journal Articles

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

C. Berger, S. Neugebauer, F. Hörich, A. Dadgar, A. Strittmatter

J. Appl. Phys. 132, 233103 (2022)

https://doi.org/10.1063/5.0130757

Published: December 2022

View article titled, Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

Journal Articles

Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Yifan Zhu, Huimin Lu, Jianping Wang, Tongjun Yu, Zizheng Li, Yucheng Tian

J. Appl. Phys. 132, 225704 (2022)

https://doi.org/10.1063/5.0128213

Published: December 2022

View article titled, Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Journal Articles

Control of emission diffraction angles and laser threshold in mixed-order sampled distributed feedback laser with organic gain media

H. Park, S. Alasvand Yazdani, F. Bencheikh, R. Komatsu, S. Yokoyama, T. Kamiya, C. Adachi

J. Appl. Phys. 132, 203101 (2022)

https://doi.org/10.1063/5.0123476

Published: November 2022

View article titled, Control of emission diffraction angles and laser threshold in mixed-order sampled distributed feedback laser with organic gain media

Includes: Supplementary data

Journal Articles

Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Boyang Lu, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lai Wang

J. Appl. Phys. 132, 174505 (2022)

https://doi.org/10.1063/5.0106537

Published: November 2022

View article titled, Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Journal Articles

Photoluminescence properties of Yb²⁺-doped Ba_0.75Al₁₁O_17.25 green phosphor ceramic

Xiaomeng Yin, Hui Lin, Dawei Zhang, Ruijin Hong, Wenlan Gao, Jian Zhang, Bai Sachuronggui

J. Appl. Phys. 132, 115105 (2022)

https://doi.org/10.1063/5.0106956

Published: September 2022

View article titled, Photoluminescence properties of Yb2+-doped Ba0.75Al11O17.25 green phosphor ceramic

Journal Articles

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, B. Gil

J. Appl. Phys. 132, 035302 (2022)

https://doi.org/10.1063/5.0089892

Published: July 2022

View article titled, Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal Articles

Point defect creation by proton and carbon irradiation of α-Ga₂O₃

Alexander Y. Polyakov, Vladimir I. Nikolaev, Igor N. Meshkov, Krzysztof Siemek, Petr B. Lagov, Eugene B. Yakimov, Alexei I. Pechnikov, Oleg S. Orlov, Alexey A. Sidorin, Sergey I. Stepanov, Ivan V. Shchemerov, Anton A. Vasilev, Alexey V. Chernykh, Anton A. Losev, Alexandr D. Miliachenko, Igor A. Khrisanov, Yu.S. Pavlov, U. A. Kobets, Stephen J. Pearton

J. Appl. Phys. 132, 035701 (2022)

https://doi.org/10.1063/5.0100359

Published: July 2022

View article titled, Point defect creation by proton and carbon irradiation of α-Ga2O3

Includes: Supplementary data

Journal Articles

Emerging materials and devices for efficient light generation

Shunsuke Murai, Russell J. Holmes, Jun Lin, Miguel Anaya, Gabriel Lozano

J. Appl. Phys. 131, 160401 (2022)

https://doi.org/10.1063/5.0094210

Published: April 2022

View article titled, Emerging materials and devices for efficient light generation

Journal Articles

Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer

Yinzuo Qian, Peng Du, Pengfei Liu, Shengjun Zhou

J. Appl. Phys. 131, 095702 (2022)

https://doi.org/10.1063/5.0080123

Published: March 2022

View article titled, Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer

NARROW

Topics

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Linearly polarized GaN micro-LED with adjustable directional emission integrated with a continuous metasurface

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED

MgF₂ as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector

Photoluminescence performance of BaAl₂O₄:Eu²⁺ cyan phosphor ceramics

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Control of emission diffraction angles and laser threshold in mixed-order sampled distributed feedback laser with organic gain media

Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Photoluminescence properties of Yb²⁺-doped Ba_0.75Al₁₁O_17.25 green phosphor ceramic

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Point defect creation by proton and carbon irradiation of α-Ga₂O₃

Emerging materials and devices for efficient light generation

Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer

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