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Journal Articles

Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED

Xi Bao, Yunxia Guan, Wanjiao Li, Jiayi Song, Lijia Chen, Cheng Wang, Shuang Xu, Keao Peng, Lianbin Niu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 193902 (2023)
https://doi.org/10.1063/5.0173874
Published: November 2023
View article titled, Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED
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Includes: Supplementary data
Journal Articles

MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Nrita Gaur, Gangadhar S. Banappanavar, Dinesh Kabra
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 025501 (2023)
https://doi.org/10.1063/5.0152626
Published: July 2023
View article titled, MgF<sub>2</sub> as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices
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Journal Articles

Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector

Xiaoyu Zhao, Yuechang Sun, Lang Shi, Shengjun Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 235703 (2023)
https://doi.org/10.1063/5.0152951
Published: June 2023
View article titled, Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector
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Journal Articles

Photoluminescence performance of BaAl2O4:Eu2+ cyan phosphor ceramics

Xiaomeng Yin, Yanna Tian, Jie Chen, Xuezhuan Yi, Renjie Jiang, Dawei Zhang, Hui Lin, Shengming Zhou, Sachuronggui Bai
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 175105 (2023)
https://doi.org/10.1063/5.0148978
Published: May 2023
View article titled, Photoluminescence performance of BaAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup> cyan phosphor ceramics
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Journal Articles

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 143101 (2023)
https://doi.org/10.1063/5.0142035
Published: April 2023
View article titled, Low-efficiency-droop <em>c</em>-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers
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Includes: Supplementary data
Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
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Journal Articles

Intramolecular charge transfer for optical applications

Pralok K. Samanta, Ramprasad Misra
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 020901 (2023)
https://doi.org/10.1063/5.0131426
Published: January 2023
View article titled, Intramolecular charge transfer for optical applications
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Journal Articles

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

C. Berger, S. Neugebauer, F. Hörich, A. Dadgar, A. Strittmatter
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 233103 (2022)
https://doi.org/10.1063/5.0130757
Published: December 2022
View article titled, Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
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Journal Articles

Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission

Yifan Zhu, Huimin Lu, Jianping Wang, Tongjun Yu, Zizheng Li, Yucheng Tian
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 225704 (2022)
https://doi.org/10.1063/5.0128213
Published: December 2022
View article titled, Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission
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Journal Articles

Control of emission diffraction angles and laser threshold in mixed-order sampled distributed feedback laser with organic gain media

H. Park, S. Alasvand Yazdani, F. Bencheikh, R. Komatsu, S. Yokoyama, T. Kamiya, C. Adachi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 203101 (2022)
https://doi.org/10.1063/5.0123476
Published: November 2022
View article titled, Control of emission diffraction angles and laser threshold in mixed-order sampled distributed feedback laser with organic gain media
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Includes: Supplementary data
Journal Articles

From lab to lamp: Understanding downconverter degradation in LED packages

Shruti Hariyani, Jakoah Brgoch, Florencio Garcia-Santamaria, Srinivas P. Sista, James E. Murphy, Anant A. Setlur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 190901 (2022)
https://doi.org/10.1063/5.0122735
Published: November 2022
View article titled, From lab to lamp: Understanding downconverter degradation in LED packages
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Journal Articles

Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes

Boyang Lu, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lai Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 174505 (2022)
https://doi.org/10.1063/5.0106537
Published: November 2022
View article titled, Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes
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Journal Articles

Photoluminescence properties of Yb2+-doped Ba0.75Al11O17.25 green phosphor ceramic

Xiaomeng Yin, Hui Lin, Dawei Zhang, Ruijin Hong, Wenlan Gao, Jian Zhang, Bai Sachuronggui
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 115105 (2022)
https://doi.org/10.1063/5.0106956
Published: September 2022
View article titled, Photoluminescence properties of Yb<sup>2+</sup>-doped Ba<sub>0.75</sub>Al<sub>11</sub>O<sub>17.25</sub> green phosphor ceramic
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Journal Articles

Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes

Wai Yuen Fu, Hoi Wai Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 060903 (2022)
https://doi.org/10.1063/5.0089750
Published: August 2022
View article titled, Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes
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Journal Articles

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, B. Gil
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035302 (2022)
https://doi.org/10.1063/5.0089892
Published: July 2022
View article titled, Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
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Journal Articles

Point defect creation by proton and carbon irradiation of α-Ga2O3

Alexander Y. Polyakov, Vladimir I. Nikolaev, Igor N. Meshkov, Krzysztof Siemek, Petr B. Lagov, Eugene B. Yakimov, Alexei I. Pechnikov, Oleg S. Orlov, Alexey A. Sidorin, Sergey I. Stepanov, Ivan V. Shchemerov, Anton A. Vasilev, Alexey V. Chernykh, Anton A. Losev, Alexandr D. Miliachenko, Igor A. Khrisanov, Yu.S. Pavlov, U. A. Kobets, Stephen J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035701 (2022)
https://doi.org/10.1063/5.0100359
Published: July 2022
View article titled, Point defect creation by proton and carbon irradiation of α-Ga<sub>2</sub>O<sub>3</sub>
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Includes: Supplementary data
Journal Articles

Emerging materials and devices for efficient light generation

Shunsuke Murai, Russell J. Holmes, Jun Lin, Miguel Anaya, Gabriel Lozano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 160401 (2022)
https://doi.org/10.1063/5.0094210
Published: April 2022
View article titled, Emerging materials and devices for efficient light generation
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Journal Articles

Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer

Yinzuo Qian, Peng Du, Pengfei Liu, Shengjun Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 095702 (2022)
https://doi.org/10.1063/5.0080123
Published: March 2022
View article titled, Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer
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Journal Articles

Persistent photoconductivity in barium titanate

Christopher Pansegrau, Matthew D. McCluskey
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 095701 (2022)
https://doi.org/10.1063/5.0075484
Published: March 2022
View article titled, Persistent photoconductivity in barium titanate
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Includes: Supplementary data
Journal Articles

Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates

Mitsuru Funato, Yoshinobu Matsuda, Keito Mori-Tamamura, Atsushi A. Yamaguchi, Hiroki Goto, Yasunobu Sumida, Yujiro Ishihara, Yoichi Kawakami
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 074502 (2022)
https://doi.org/10.1063/5.0081815
Published: February 2022
View article titled, Optical anisotropy of (11 2 ¯ 3) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates
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