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Journal Articles

Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography

Zhiheng Lin, Yaoxun Wang, Yun-Ran Wang, Im Sik Han, Mark Hopkinson

J. Appl. Phys. 136, 123104 (2024)

https://doi.org/10.1063/5.0215529

Published: September 2024

View article titled, Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography

Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius

J. Appl. Phys. 136, 083103 (2024)

https://doi.org/10.1063/5.0227663

Published: August 2024

View article titled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Journal Articles

Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

A. Lex, A. Avramescu, F. Vögl, M. Brandl, M. Binder, M. Hetzl, H. Spende, S. Wolter, A. Waag, N. von Malm

J. Appl. Phys. 136, 024501 (2024)

https://doi.org/10.1063/5.0204652

Published: July 2024

View article titled, Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

Journal Articles

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

K. N. Schrock, D. A. Montealegre, W. Dai, M. Z. Bellus, L. M. Nichols, J. P. Prineas

J. Appl. Phys. 135, 183101 (2024)

https://doi.org/10.1063/5.0193624

Published: May 2024

View article titled, Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

Journal Articles

Low voltage thick-film electroluminescent device with evaporated ZnS:Mn and spin coated BaTiO₃ dielectric layer

Taisei Kitawaki, Koichi Wani, Takahito Imai, Shin-ichi Yamamoto

J. Appl. Phys. 134, 044502 (2023)

https://doi.org/10.1063/5.0158080

Published: July 2023

View article titled, Low voltage thick-film electroluminescent device with evaporated ZnS:Mn and spin coated BaTiO3 dielectric layer

Journal Articles

MgF₂ as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Nrita Gaur, Gangadhar S. Banappanavar, Dinesh Kabra

J. Appl. Phys. 134, 025501 (2023)

https://doi.org/10.1063/5.0152626

Published: July 2023

View article titled, MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Journal Articles

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

Ryan M. France, Jennifer Selvidge, Kunal Mukherjee, Myles A. Steiner

J. Appl. Phys. 132, 184502 (2022)

https://doi.org/10.1063/5.0125998

Published: November 2022

View article titled, Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

Journal Articles

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Jeong-Hwan Park, Wentao Cai, Heajeong Cheong, Yasuhisa Ushida, Da-Hoon Lee, Yuto Ando, Yuta Furusawa, Yoshio Honda, Dong-Seon Lee, Tae-Yeon Seong, Hiroshi Amano

J. Appl. Phys. 131, 153104 (2022)

https://doi.org/10.1063/5.0085384

Published: April 2022

View article titled, The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Includes: Supplementary data

Journal Articles

Field-induced light emission from a close-packed Mn-doped ZnS quantum-dot layer in an alternate-current thin-film electroluminescent configuration

A. V. Longo, B. Notebaert, A. Chevillot, M. Gaceur, R. Messina, A. Durnez, T. Baptiste, C. Dupuis, A. Madouri, N. Battaglini, S. Ammar

J. Appl. Phys. 131, 044503 (2022)

https://doi.org/10.1063/5.0080328

Published: January 2022

View article titled, Field-induced light emission from a close-packed Mn-doped ZnS quantum-dot layer in an alternate-current thin-film electroluminescent configuration

Journal Articles

Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model

Salman Bawa, Tingwei Zhang, Liam Dow, Samuel Peter, Adrian H. Kitai

J. Appl. Phys. 129, 044501 (2021)

https://doi.org/10.1063/5.0033243

Published: January 2021

View article titled, Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model

Journal Articles

Hot-carrier enhanced light emission: The origin of above-threshold photons from electrically driven plasmonic tunnel junctions

Yunxuan Zhu, Longji Cui, Douglas Natelson

J. Appl. Phys. 128, 233105 (2020)

https://doi.org/10.1063/5.0024392

Published: December 2020

View article titled, Hot-carrier enhanced light emission: The origin of above-threshold photons from electrically driven plasmonic tunnel junctions

Journal Articles

Full InGaN red light emitting diodes

A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A. M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J. C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta

J. Appl. Phys. 128, 135704 (2020)

https://doi.org/10.1063/5.0016217

Published: October 2020

View article titled, Full InGaN red light emitting diodes

Journal Articles

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Dong-Pyo Han, Chan-Hyoung Oh, Dong-Soo Shin, Jong-In Shim, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

J. Appl. Phys. 128, 123103 (2020)

https://doi.org/10.1063/5.0008041

Published: September 2020

View article titled, Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Journal Articles

Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) In_xAl_1−xN

Roy Byung Kyu Chung

J. Appl. Phys. 128, 043104 (2020)

https://doi.org/10.1063/5.0005247

Published: July 2020

View article titled, Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) InxAl1−xN

Journal Articles

Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Kangkai Tian, Chunshuang Chu, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Xingye Zhou, Zhihong Feng, Tongbo Wei, Zi-Hui Zhang

J. Appl. Phys. 126, 245702 (2019)

https://doi.org/10.1063/1.5127916

Published: December 2019

View article titled, Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Journal Articles

Ge doped GaN and Al_0.5Ga_0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara, B. Damilano, G. Feuillet, S. Vézian, K. Ayadi, S. Chenot, J.-Y. Duboz

J. Appl. Phys. 126, 224503 (2019)

https://doi.org/10.1063/1.5121379

Published: December 2019

View article titled, Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal Articles

On the temperature dependence of the efficiency of electroluminescence

Alberto Casado, Ivan Radevici, Toufik Sadi, Jani Oksanen

J. Appl. Phys. 126, 173102 (2019)

https://doi.org/10.1063/1.5124566

Published: November 2019

View article titled, On the temperature dependence of the efficiency of electroluminescence

Journal Articles

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

A. Y. Polyakov, C. Haller, N. B. Smirnov, A. S. Shiko, I. V. Shchemerov, S. V. Chernykh, L. A. Alexanyan, P. B. Lagov, Yu. S. Pavlov, J.-F. Carlin, M. Mosca, R. Butté, N. Grandjean, S. J. Pearton

J. Appl. Phys. 126, 125708 (2019)

https://doi.org/10.1063/1.5122314

Published: September 2019

View article titled, Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Includes: Supplementary data

Journal Articles

Impact of superlinear defect-related recombination on LED performance at low injection

T. H. Gfroerer, Ruiming Chen, Grace Watt, Zhiqiang Liu, Yong Zhang

J. Appl. Phys. 125, 204502 (2019)

https://doi.org/10.1063/1.5089125

Published: May 2019

View article titled, Impact of superlinear defect-related recombination on LED performance at low injection

Journal Articles

Correlation between bias-dependent ESR signals and magnetic field effects in organic light emitting diodes

Katsuichi Kanemoto, Shuto Hatanaka, Takayuki Suzuki

J. Appl. Phys. 125, 125501 (2019)

https://doi.org/10.1063/1.5084216

Published: March 2019

View article titled, Correlation between bias-dependent ESR signals and magnetic field effects in organic light emitting diodes

Includes: Supplementary data

NARROW

Topics

Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

Low voltage thick-film electroluminescent device with evaporated ZnS:Mn and spin coated BaTiO₃ dielectric layer

MgF₂ as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Field-induced light emission from a close-packed Mn-doped ZnS quantum-dot layer in an alternate-current thin-film electroluminescent configuration

Porous SiC electroluminescence from p–i–n junction and a lateral carrier diffusion model

Hot-carrier enhanced light emission: The origin of above-threshold photons from electrically driven plasmonic tunnel junctions

Full InGaN red light emitting diodes

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) In_xAl_1−xN

Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission

Ge doped GaN and Al_0.5Ga_0.5N-based tunnel junctions on top of visible and UV light emitting diodes

On the temperature dependence of the efficiency of electroluminescence

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Impact of superlinear defect-related recombination on LED performance at low injection

Correlation between bias-dependent ESR signals and magnetic field effects in organic light emitting diodes

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