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Journal Articles

Suppression of phase separation in AlGaInAs compositionally graded buffers for 1550 nm photovoltaic converters on GaAs

Kevin L. Schulte, John F. Geisz, Harvey L. Guthrey, Ryan M. France, Edgard Winter da Costa, Myles A. Steiner

J. Appl. Phys. 137, 035301 (2025)

https://doi.org/10.1063/5.0244178

Published: January 2025

View article titled, Suppression of phase separation in AlGaInAs compositionally graded buffers for 1550 nm photovoltaic converters on GaAs

Journal Articles

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Anusmita Chakravorty, Alexandre Boulle, Aurélien Debelle, Gouranga Manna, Pinku Saha, D. Kanjilal, Debdulal Kabiraj

J. Appl. Phys. 136, 035902 (2024)

https://doi.org/10.1063/5.0205284

Published: July 2024

View article titled, Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Journal Articles

Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi₂Se₃ thin film

Sudhanshu Gautam, V. K. Maurya, Vishnu Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha

J. Appl. Phys. 135, 194401 (2024)

https://doi.org/10.1063/5.0206345

Published: May 2024

View article titled, Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film

Journal Articles

Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Tuhin Dey, Augustus W. Arbogast, Qian Meng, Md. Shamim Reza, Aaron J. Muhowski, Joshua J. P. Cooper, Erdem Ozdemir, Fabian U. Naab, Thales Borrely, Jonathan Anderson, Rachel S. Goldman, Daniel Wasserman, Seth R. Bank, Mark W. Holtz, Edwin L. Piner, Mark A. Wistey

J. Appl. Phys. 134, 193102 (2023)

https://doi.org/10.1063/5.0173429

Published: November 2023

View article titled, Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Growth modes and chemical-phase separation in GaP_1−xN_x layers grown by chemical beam epitaxy on GaP/Si(001)

K. Ben Saddik, S. Fernández-Garrido, R. Volkov, J. Grandal, N. Borgardt, B. J. García

J. Appl. Phys. 134, 175703 (2023)

https://doi.org/10.1063/5.0173748

Published: November 2023

View article titled, Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

Journal Articles

Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate

Kapil Narang, Rajesh K. Bag, Akhilesh Pandey, Anshu Goyal, Vikash K. Singh, Jaya Lohani, Brajesh S. Yadav, Sachin Saini, Preeti Bharti, Sandeep Dalal, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh

J. Appl. Phys. 134, 145302 (2023)

https://doi.org/10.1063/5.0141724

Published: October 2023

View article titled, Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate

Journal Articles

Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers

Wenwu Pan, Shuo Ma, Xiao Sun, Shimul Kanti Nath, Songqing Zhang, Renjie Gu, Zekai Zhang, Lorenzo Faraone, Wen Lei

J. Appl. Phys. 133, 185301 (2023)

https://doi.org/10.1063/5.0143854

Published: May 2023

View article titled, Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers

Journal Articles

Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium

Shu-Yu Wen, Li He, Yuan-Hao Zhu, Jun-Wei Luo

J. Appl. Phys. 133, 045703 (2023)

https://doi.org/10.1063/5.0134924

Published: January 2023

View article titled, Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium

Journal Articles

In situ MOCVD growth and band offsets of Al₂O₃ dielectric on β-Ga₂O₃ and β-(Al_xGa_1−x)₂O₃ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao

J. Appl. Phys. 132, 165301 (2022)

https://doi.org/10.1063/5.0104433

Published: October 2022

View article titled, In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films

Includes: Supplementary data

Journal Articles

Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

M. Yassine, A. Nair, J. Fammels, E. Wade, Z. Fu, A. Yassine, L. Kirste, O. Ambacher

J. Appl. Phys. 132, 114101 (2022)

https://doi.org/10.1063/5.0103578

Published: September 2022

View article titled, Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

Journal Articles

Tailoring interface epitaxy and magnetism in La_1−xSr_xMnO₃/SrTiO₃ heterostructures via temperature-driven defect engineering

Alan Molinari, Saleh Gorji, Jan Michalička, Christian Kübel, Horst Hahn, Robert Kruk

J. Appl. Phys. 132, 105304 (2022)

https://doi.org/10.1063/5.0095406

Published: September 2022

View article titled, Tailoring interface epitaxy and magnetism in La1−xSrxMnO3/SrTiO3 heterostructures via temperature-driven defect engineering

Includes: Supplementary data

Journal Articles

Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers

Wenwu Pan, Shimul Kanti Nath, Shuo Ma, Renjie Gu, Zekai Zhang, Lan Fu, Lorenzo Faraone, Wen Lei

J. Appl. Phys. 131, 205304 (2022)

https://doi.org/10.1063/5.0091573

Published: May 2022

View article titled, Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers

Journal Articles

Properties of topological crystalline insulator Pb_0.5Sn_0.5Te epitaxial films doped with bismuth

B. A. Kawata, C. I. Fornari, P. Kagerer, J. Heßdörfer, H. Bentmann, F. Reinert, A. K. Okazaki, P. H. O. Rappl, E. Abramof

J. Appl. Phys. 131, 085302 (2022)

https://doi.org/10.1063/5.0080329

Published: February 2022

View article titled, Properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth

Includes: Supplementary data

Journal Articles

Structural, electrical, and luminescence properties of (0001) ZnO epitaxial layers grown on c-GaN/sapphire templates by pulsed laser deposition technique

Simran, Santosh Kumar Yadav, Poulab Chakrabarti, Subhabrata Dhar

J. Appl. Phys. 131, 015302 (2022)

https://doi.org/10.1063/5.0073311

Published: January 2022

View article titled, Structural, electrical, and luminescence properties of (0001) ZnO epitaxial layers grown on c-GaN/sapphire templates by pulsed laser deposition technique

Includes: Supplementary data

Journal Articles

Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers

Takuto Izawa, Hirono Okano, Shintaro Morita, Noboru Ohtani

J. Appl. Phys. 130, 095702 (2021)

https://doi.org/10.1063/5.0057627

Published: September 2021

View article titled, Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers

Journal Articles

Influence of swift heavy ion irradiations on temperature dependent phononic behavior of epitaxial LaNiO₃ thin film

Sunidhi, Vishal Sharma, Sunil K. Arora, Florencio Sánchez, Fouran Singh, Vasant Sathe

J. Appl. Phys. 130, 015301 (2021)

https://doi.org/10.1063/5.0046259

Published: July 2021

View article titled, Influence of swift heavy ion irradiations on temperature dependent phononic behavior of epitaxial LaNiO3 thin film

Includes: Supplementary data

Journal Articles

Deterioration of the piezoelectric properties of (Bi_0.5Na_0.5)TiO₃ when using Na₂CO₃ as a sintering aid: A crystallographic and microstructural study

Tadhg Mahon, Dimosthenis Giannopoulos, Sybrand van der Zwaag, Pim Groen

J. Appl. Phys. 129, 134102 (2021)

https://doi.org/10.1063/5.0044636

Published: April 2021

View article titled, Deterioration of the piezoelectric properties of (Bi0.5Na0.5)TiO3 when using Na2CO3 as a sintering aid: A crystallographic and microstructural study

Journal Articles

A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Michael E. Liao, Mark S. Goorsky

J. Appl. Phys. 129, 025105 (2021)

https://doi.org/10.1063/5.0020313

Published: January 2021

View article titled, A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Journal Articles

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Pierre Ruterana, Magali Morales, Nicolas Chery, Thi Huong Ngo, Marie-Pierre Chauvat, Kaddour Lekhal, Benjamin Damilano, Bernard Gil

J. Appl. Phys. 128, 223102 (2020)

https://doi.org/10.1063/5.0027119

Published: December 2020

View article titled, Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Journal Articles

Influence of Ga content and high temperature annealing on the short range order and magnetostriction of Fe–Ga single crystals

Richard A. Laroche, Sivaraman Guruswamy

J. Appl. Phys. 128, 195102 (2020)

https://doi.org/10.1063/5.0029241

Published: November 2020

View article titled, Influence of Ga content and high temperature annealing on the short range order and magnetostriction of Fe–Ga single crystals

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Topics

Suppression of phase separation in AlGaInAs compositionally graded buffers for 1550 nm photovoltaic converters on GaAs

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi₂Se₃ thin film

Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Growth modes and chemical-phase separation in GaP_1−xN_x layers grown by chemical beam epitaxy on GaP/Si(001)

Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate

Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers

Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium

In situ MOCVD growth and band offsets of Al₂O₃ dielectric on β-Ga₂O₃ and β-(Al_xGa_1−x)₂O₃ thin films

Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

Tailoring interface epitaxy and magnetism in La_1−xSr_xMnO₃/SrTiO₃ heterostructures via temperature-driven defect engineering

Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers

Properties of topological crystalline insulator Pb_0.5Sn_0.5Te epitaxial films doped with bismuth

Structural, electrical, and luminescence properties of (0001) ZnO epitaxial layers grown on c-GaN/sapphire templates by pulsed laser deposition technique

Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers

Influence of swift heavy ion irradiations on temperature dependent phononic behavior of epitaxial LaNiO₃ thin film

Deterioration of the piezoelectric properties of (Bi_0.5Na_0.5)TiO₃ when using Na₂CO₃ as a sintering aid: A crystallographic and microstructural study

A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Influence of Ga content and high temperature annealing on the short range order and magnetostriction of Fe–Ga single crystals

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