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Journal Articles

Depth profiling of temperature in water at a micrometer scale using time resolved Brillouin scattering

Zouhir Maslah, Bertrand Audoin

J. Appl. Phys. 136, 123101 (2024)

https://doi.org/10.1063/5.0225134

Published: September 2024

View article titled, Depth profiling of temperature in water at a micrometer scale using time resolved Brillouin scattering

Journal Articles

Low-temperature formation of Ti₂AlN during post-deposition annealing of reactive multilayer systems

Moses O. Nnaji, David A. Tavakoli, Dale A. Hitchcock, Eric M. Vogel

J. Appl. Phys. 136, 115302 (2024)

https://doi.org/10.1063/5.0230405

Published: September 2024

View article titled, Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems

Journal Articles

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto

J. Appl. Phys. 136, 095702 (2024)

https://doi.org/10.1063/5.0221700

Published: September 2024

View article titled, Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Journal Articles

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

C. A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball

J. Appl. Phys. 136, 045705 (2024)

https://doi.org/10.1063/5.0202581

Published: July 2024

View article titled, Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal Articles

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Anusmita Chakravorty, Alexandre Boulle, Aurélien Debelle, Gouranga Manna, Pinku Saha, D. Kanjilal, Debdulal Kabiraj

J. Appl. Phys. 136, 035902 (2024)

https://doi.org/10.1063/5.0205284

Published: July 2024

View article titled, Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Journal Articles

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n⁺ epitaxial wafer

Shenzhong Li, Tong Zhao, Defan Wu, Xingbo Liang, Hao Chen, Qunlin Nie, Daxi Tian, Xiangyang Ma, Deren Yang

J. Appl. Phys. 135, 235704 (2024)

https://doi.org/10.1063/5.0202400

Published: June 2024

View article titled, Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer

Journal Articles

Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance

Bettina Wehring, Firat Karakus, Lukas Gerlich, Benjamin Lilienthal-Uhlig, Michael Hecker, Christoph Leyens

J. Appl. Phys. 135, 215302 (2024)

https://doi.org/10.1063/5.0211802

Published: June 2024

View article titled, Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance

Journal Articles

Quantitative characterization of occupational sites of implanted P atoms in diamond

Jyoji Nakata, Yuhei Seki, Yasushi Hoshino

J. Appl. Phys. 135, 195705 (2024)

https://doi.org/10.1063/5.0204258

Published: May 2024

View article titled, Quantitative characterization of occupational sites of implanted P atoms in diamond

Journal Articles

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

P. Kumar, M. E. Bathen, M. I. M. Martins, T. Prokscha, U. Grossner

J. Appl. Phys. 135, 185704 (2024)

https://doi.org/10.1063/5.0205965

Published: May 2024

View article titled, Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

Journal Articles

Buried junction and efficient carrier separation in CdSe_xTe_1−x/CdTe solar cells

Hongxu Jiang, Yanbo Cai, Guangwei Wang, Kai Yi, Fei Liu, Juan Tian, Kai Shen, Deliang Wang

J. Appl. Phys. 135, 143102 (2024)

https://doi.org/10.1063/5.0188812

Published: April 2024

View article titled, Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Journal Articles

Modulation of insulator metal transition of VO₂ films grown on Al₂O₃ (001) and TiO₂ (001) substrates by the crystallization of capping Ge₂Sb₂Te₅ layer

Takuto Ohnuki, Kunio Okimura, Reki Nakamoto, Yuji Muraoka, Joe Sakai, Masashi Kuwahara

J. Appl. Phys. 134, 245302 (2023)

https://doi.org/10.1063/5.0176810

Published: December 2023

View article titled, Modulation of insulator metal transition of VO₂ films grown on Al2O3 (001) and TiO2 (001) substrates by the crystallization of capping Ge2Sb2Te5 layer

Journal Articles

Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply

Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka

J. Appl. Phys. 134, 193101 (2023)

https://doi.org/10.1063/5.0178803

Published: November 2023

View article titled, Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply

Journal Articles

380-keV Ar⁺-irradiation effects on optical phonons in graphite studied with transient reflection measurement

Tetsuya Kimata, Taichi Kato, Itsuki Takagi, Yuma Konno, Hiroyuki Okazaki, Shunya Yamamoto, Tetsuya Yamaki, Kazutaka G. Nakamura

J. Appl. Phys. 134, 135306 (2023)

https://doi.org/10.1063/5.0161215

Published: October 2023

View article titled, 380-keV Ar+-irradiation effects on optical phonons in graphite studied with transient reflection measurement

Includes: Supplementary data

Journal Articles

Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams

Akira Uedono, Takeshi Nogami, Oleg Gluschenkov, Yasir Sulehria, Junjun Liu, Toshiyuki Tabata, Lu Lu, Katsuhiro Mitsuda, Ian Brown, Yasutoshi Okuno

J. Appl. Phys. 134, 135103 (2023)

https://doi.org/10.1063/5.0166145

Published: October 2023

View article titled, Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams

Journal Articles

Resistivity size effect in epitaxial VNi₂ layers

Minghua Zhang, Daniel Gall

J. Appl. Phys. 134, 105302 (2023)

https://doi.org/10.1063/5.0160462

Published: September 2023

View article titled, Resistivity size effect in epitaxial VNi2 layers

Includes: Supplementary data

Journal Articles

Response to “Comment on ‘Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral equation and imperialist competitive algorithm method’” [J. Appl. Phys. 134, 056101 (2023)]

A. Mandelis, S. Kooshki, A. Melnikov

J. Appl. Phys. 134, 056102 (2023)

https://doi.org/10.1063/5.0155055

Published: August 2023

View article titled, Response to “Comment on ‘Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral equation and imperialist competitive algorithm method’” [J. Appl. Phys. 134, 056101 (2023)]

Journal Articles

Comment on “Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral-equation and imperialist competitive algorithm method” [J. Appl. Phys. 133, 055102 (2023)]

Jean-Claude Krapez

J. Appl. Phys. 134, 056101 (2023)

https://doi.org/10.1063/5.0151465

Published: August 2023

View article titled, Comment on “Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral-equation and imperialist competitive algorithm method” [J. Appl. Phys. 133, 055102 (2023)]

Includes: Supplementary data

Journal Articles

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

Soumen Kar, Conan Weiland, Chenyu Zhou, Ekta Bhatia, Brian Martinick, Jakub Nalaskowski, John Mucci, Stephen Olson, Pui Yee Hung, Ilyssa Wells, Hunter Frost, Corbet S. Johnson, Thomas Murray, Vidya Kaushik, Sean Kirkpatrick, Kiet Chau, Michael J. Walsh, Mingzhao Liu, Satyavolu S. Papa Rao

J. Appl. Phys. 134, 025301 (2023)

https://doi.org/10.1063/5.0153617

Published: July 2023

View article titled, Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

Journal Articles

Microsphere-assisted enhanced photothermal lens detection integrated with digital holographic microscopy for 3D particle sensing and thermal diffusivity measurement

S. Kabi, A. R. Moradi, H. Cabrera

J. Appl. Phys. 133, 215103 (2023)

https://doi.org/10.1063/5.0146942

Published: June 2023

View article titled, Microsphere-assisted enhanced photothermal lens detection integrated with digital holographic microscopy for 3D particle sensing and thermal diffusivity measurement

Journal Articles

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

R. Auguste, M. O. Liedke, M. Butterling, B. P. Uberuaga, F. A. Selim, A. Wagner, P. Hosemann

J. Appl. Phys. 133, 185901 (2023)

https://doi.org/10.1063/5.0144308

Published: May 2023

View article titled, In situ measurements of non-equilibrium positron state defects during He irradiation in Si

NARROW

Topics

Depth profiling of temperature in water at a micrometer scale using time resolved Brillouin scattering

Low-temperature formation of Ti₂AlN during post-deposition annealing of reactive multilayer systems

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n⁺ epitaxial wafer

Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance

Quantitative characterization of occupational sites of implanted P atoms in diamond

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

Buried junction and efficient carrier separation in CdSe_xTe_1−x/CdTe solar cells

Modulation of insulator metal transition of VO₂ films grown on Al₂O₃ (001) and TiO₂ (001) substrates by the crystallization of capping Ge₂Sb₂Te₅ layer

Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply

380-keV Ar⁺-irradiation effects on optical phonons in graphite studied with transient reflection measurement

Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams

Resistivity size effect in epitaxial VNi₂ layers

Response to “Comment on ‘Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral equation and imperialist competitive algorithm method’” [J. Appl. Phys. 134, 056101 (2023)]

Comment on “Simultaneous density and thermal conductivity depth profile reconstructions from noised thermal-wave amplitude and phase data using a combined integral-equation and imperialist competitive algorithm method” [J. Appl. Phys. 133, 055102 (2023)]

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

Microsphere-assisted enhanced photothermal lens detection integrated with digital holographic microscopy for 3D particle sensing and thermal diffusivity measurement

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

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