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Journal Articles

Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching

Achintya Dutta, P. Ashok, Amit Verma
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145306 (2023)
https://doi.org/10.1063/5.0167547
Published: October 2023
View article titled, Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching
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Journal Articles

Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers

Deepali Jagga, Artur Useinov
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 124101 (2023)
https://doi.org/10.1063/5.0166078
Published: September 2023
View article titled, Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers
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Journal Articles

Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

Venkata K. Perla, Sarit K. Ghosh, Pooja Kumari, Chandan Saha, Kaushik Mallick
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 104501 (2023)
https://doi.org/10.1063/5.0165055
Published: September 2023
View article titled, Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication
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Includes: Supplementary data
Journal Articles

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Mahesh Kumar Yadav, Somnath S. Kundale, Santosh S. Sutar, Tukaram D. Dongale, Pradip Kumar, Neeraj Panwar
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105101 (2023)
https://doi.org/10.1063/5.0159624
Published: September 2023
View article titled, Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device
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Journal Articles

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Dongfang Chen, Shaoqing Liu, Xu Jiang, Jun Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 094101 (2023)
https://doi.org/10.1063/5.0168599
Published: September 2023
View article titled, Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures
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Includes: Supplementary data
Journal Articles

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Yasuhisa Omura, Abhijit Mallik
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 065105 (2023)
https://doi.org/10.1063/5.0156183
Published: August 2023
View article titled, Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate
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Journal Articles

Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

Chandra Prakash, Ambesh Dixit
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 044903 (2023)
https://doi.org/10.1063/5.0155463
Published: July 2023
View article titled, Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture
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Includes: Supplementary data
Journal Articles

Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study

Matthew P. West, Georges Pavlidis, Robert H. Montgomery, Fabia Farlin Athena, Muhammad S. Jamil, Andrea Centrone, Samuel Graham, Eric M. Vogel
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185101 (2023)
https://doi.org/10.1063/5.0145201
Published: May 2023
View article titled, Thermal environment impact on HfO<sub>x</sub> RRAM operation: A nanoscale thermometry and modeling study
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Includes: Supplementary data
Journal Articles

Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress

C. Laguna, M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi, G. Navarro
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 074501 (2023)
https://doi.org/10.1063/5.0134947
Published: February 2023
View article titled, Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress
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Journal Articles

The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Taehoon Park, Hakcheon Jeong, See-On Park, Seok Man Hong, Seokho Seo, Seungwoo Park, Shinhyun Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 075701 (2023)
https://doi.org/10.1063/5.0131593
Published: February 2023
View article titled, The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WO<sub>x</sub>/p-Si based memristor
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Journal Articles

Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing

Jianxing Zhang, Hangfei Li, Tao Liu, Shijie Dong, Sheng Xu, Hailian Li, Jie Su
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 044502 (2023)
https://doi.org/10.1063/5.0133146
Published: January 2023
View article titled, Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing
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Includes: Supplementary data
Journal Articles

Phase-field simulation of nonvolatile ferroelectric-domain-wall memory

Yankai Zhu, Gang Bai, Wei Li, Cunfa Gao
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 234102 (2022)
https://doi.org/10.1063/5.0123297
Published: December 2022
View article titled, Phase-field simulation of nonvolatile ferroelectric-domain-wall memory
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Journal Articles

Polarization retention dependence of imprint time within LiNbO3 single-crystal domain wall devices

Wen Di Zhang, Xiao Zhuang, Jun Jiang, An Quan Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 224103 (2022)
https://doi.org/10.1063/5.0126608
Published: December 2022
View article titled, Polarization retention dependence of imprint time within LiNbO<sub>3</sub> single-crystal domain wall devices
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Journal Articles

Insights into nonvolatile resistive switching in monolayer hexagonal boron nitride

Sanchali Mitra, Santanu Mahapatra
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 224302 (2022)
https://doi.org/10.1063/5.0128682
Published: December 2022
View article titled, Insights into nonvolatile resistive switching in monolayer hexagonal boron nitride
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Includes: Supplementary data
Journal Articles

Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO3 ferroelectric tunnel junction

Xiao Long, Huan Tan, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214103 (2022)
https://doi.org/10.1063/5.0125040
Published: December 2022
View article titled, Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO<sub>3</sub> ferroelectric tunnel junction
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Includes: Supplementary data
Journal Articles

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

F. Jiménez-Molinos, G. Vinuesa, H. García, A. Tarre, A. Tamm, K. Kalam, K. Kukli, S. Dueñas, H. Castán, M. B. González, F. Campabadal, J. B. Roldán
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 194501 (2022)
https://doi.org/10.1063/5.0104890
Published: November 2022
View article titled, Thermal effects on TiN/Ti/HfO<sub>2</sub>/Pt memristors charge conduction
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Journal Articles

Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices

Shiva Lamichhane, Savita Sharma, Monika Tomar, Arijit Chowdhuri
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 134102 (2022)
https://doi.org/10.1063/5.0103236
Published: October 2022
View article titled, Effect of variation in glancing angle deposition on resistive switching property of WO<sub>3</sub> thin films for RRAM devices
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Journal Articles

Toward accurate ferroelectric polarization estimation in nanoscopic systems

Sambit Mohapatra, Wolfgang Weber, Martin Bowen, Samy Boukari, Victor Da Costa
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 134101 (2022)
https://doi.org/10.1063/5.0102920
Published: October 2022
View article titled, Toward accurate ferroelectric polarization estimation in nanoscopic systems
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Includes: Supplementary data
Journal Articles

Unravelling the role of oxygen vacancies on the current transport mechanisms in all-perovskite nickelate/titanate heterojunctions for nonvolatile memory applications

Yong Zhang, Shunhua Gao, Chunrui Ma, Lu Lu, Chuan Yu Han, Ming Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 135303 (2022)
https://doi.org/10.1063/5.0111879
Published: October 2022
View article titled, Unravelling the role of oxygen vacancies on the current transport mechanisms in all-perovskite nickelate/titanate heterojunctions for nonvolatile memory applications
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Includes: Supplementary data
Journal Articles

Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effect

M. M. Chang, D. Y. Guo, X. L. Zhong, F. B. Zhang, J. B. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 123105 (2022)
https://doi.org/10.1063/5.0105752
Published: September 2022
View article titled, Impact of 100 MeV high-energy proton irradiation on <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector: Oxygen vacancies formation and resistance switching effect
Open the PDF for Impact of 100 MeV high-energy proton irradiation on <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector: Oxygen vacancies formation and resistance switching effect in another window