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Journal Articles

Resistive switching behavior of quasi-2D CsPbBr₃ memristors: Impact of ambient atmosphere on logic storage and computing integration with anti-crosstalk and reconfiguration features

Mufan Zhu, ChuTing Yao, Xiaofei Zhang, Song He, Baochang Cheng, Jie Zhao

J. Appl. Phys. 136, 225501 (2024)

https://doi.org/10.1063/5.0220511

Published: December 2024

View article titled, Resistive switching behavior of quasi-2D CsPbBr3 memristors: Impact of ambient atmosphere on logic storage and computing integration with anti-crosstalk and reconfiguration features

Journal Articles

Large resistive switching in ultrathin BiFeO₃ thin films

Zhijun Ma, Zhiwei Wang, Qi Zhang, Yizhong Guo, Peng Zhou, Kun Liang, Tianjin Zhang, Nagarajan Valanoor

J. Appl. Phys. 136, 154101 (2024)

https://doi.org/10.1063/5.0231809

Published: October 2024

View article titled, Large resistive switching in ultrathin BiFeO3 thin films

Journal Articles

Flexible memristors with low-operation voltage and high bending stability based on Cu₂AgBiI₆ perovskite

Xinci Chen, Xiang Yin, Zicong Li, Lingyu Meng, Xiaoli Han, Zhijun Zhang, Xianmin Zhang

J. Appl. Phys. 136, 094501 (2024)

https://doi.org/10.1063/5.0231148

Published: September 2024

View article titled, Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Journal Articles

Observation of transient aspects of self-sustained oscillations and the role of parallel capacitance in VO₂-based planar devices

Junpei Kidokoro, Md. Suruz Mian, Lamisa Hoque, Peng Yu, Kunio Okimura, Toshihiro Nakanishi

J. Appl. Phys. 136, 065303 (2024)

https://doi.org/10.1063/5.0211327

Published: August 2024

View article titled, Observation of transient aspects of self-sustained oscillations and the role of parallel capacitance in VO2-based planar devices

Journal Articles

Observation and characterization of titanium-like nano-filament in TiO₂ memristor using superconducting electrode(s) and Andreev spectroscopy

Martin Moško, Mária Koscelanská, Antónia Mošková, Marek Vidiš, Serhii Volkov, Maroš Gregor, Magdaléna Poláčková, Tomáš Roch, Branislav Grančič, Leonid Satrapinskyy, Peter Kúš, Andrej Plecenik, Tomáš Plecenik

J. Appl. Phys. 136, 054303 (2024)

https://doi.org/10.1063/5.0221209

Published: August 2024

View article titled, Observation and characterization of titanium-like nano-filament in TiO2 memristor using superconducting electrode(s) and Andreev spectroscopy

Journal Articles

Full factorial analysis of gradual switching in thermally oxidized memristive devices

P. Stasner, T. Hennen, E. Gorbunova, A. Garcia Munoz, R. Waser, D. J. Wouters

J. Appl. Phys. 135, 234901 (2024)

https://doi.org/10.1063/5.0214036

Published: June 2024

View article titled, Full factorial analysis of gradual switching in thermally oxidized memristive devices

Journal Articles

Modeling defect-level switching for nonlinear and hysteretic electronic devices

Jiahao Dong, R. Jaramillo

J. Appl. Phys. 135, 224501 (2024)

https://doi.org/10.1063/5.0197121

Published: June 2024

View article titled, Modeling defect-level switching for nonlinear and hysteretic electronic devices

Journal Articles

Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage

Heidemarie Schmidt

J. Appl. Phys. 135, 200902 (2024)

https://doi.org/10.1063/5.0206891

Published: May 2024

View article titled, Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage

Journal Articles

Nature of point defects in monolayer MoS₂ and the MoS₂/Au(111) heterojunction

Roozbeh Anvari, Wennie Wang

J. Appl. Phys. 135, 174304 (2024)

https://doi.org/10.1063/5.0205981

Published: May 2024

View article titled, Nature of point defects in monolayer MoS2 and the MoS2/Au(111) heterojunction

Journal Articles

Nonvolatile behavior of resistive switching memory in Ag/WO_x/TiO_y/ITO device based on WO_x/TiO_y heterojunction

Hosameldeen Elshekh, Hongyan Wang, Chuan Yang, Shouhui Zhu

J. Appl. Phys. 135, 135107 (2024)

https://doi.org/10.1063/5.0189364

Published: April 2024

View article titled, Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Journal Articles

Impact of laser energy density on engineering resistive switching dynamics in self-rectifying analog memristors based on BiFeO₃ thin films

Xianyue Zhao, Kefeng Li, Ziang Chen, Jan Dellith, Andrea Dellith, Marco Diegel, Daniel Blaschke, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du

J. Appl. Phys. 135, 135303 (2024)

https://doi.org/10.1063/5.0196718

Published: April 2024

View article titled, Impact of laser energy density on engineering resistive switching dynamics in self-rectifying analog memristors based on BiFeO3 thin films

Journal Articles

Charge trapping-induced current–voltage hysteresis in a squaraine nanowire mesh enables synaptic memristive functionality

Karl Griffin, Gareth Redmond

J. Appl. Phys. 135, 065502 (2024)

https://doi.org/10.1063/5.0176391

Published: February 2024

View article titled, Charge trapping-induced current–voltage hysteresis in a squaraine nanowire mesh enables synaptic memristive functionality

Journal Articles

Modulation of insulator metal transition of VO₂ films grown on Al₂O₃ (001) and TiO₂ (001) substrates by the crystallization of capping Ge₂Sb₂Te₅ layer

Takuto Ohnuki, Kunio Okimura, Reki Nakamoto, Yuji Muraoka, Joe Sakai, Masashi Kuwahara

J. Appl. Phys. 134, 245302 (2023)

https://doi.org/10.1063/5.0176810

Published: December 2023

View article titled, Modulation of insulator metal transition of VO₂ films grown on Al2O3 (001) and TiO2 (001) substrates by the crystallization of capping Ge2Sb2Te5 layer

Journal Articles

Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching

Achintya Dutta, P. Ashok, Amit Verma

J. Appl. Phys. 134, 145306 (2023)

https://doi.org/10.1063/5.0167547

Published: October 2023

View article titled, Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching

Journal Articles

Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers

Deepali Jagga, Artur Useinov

J. Appl. Phys. 134, 124101 (2023)

https://doi.org/10.1063/5.0166078

Published: September 2023

View article titled, Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers

Journal Articles

Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

Venkata K. Perla, Sarit K. Ghosh, Pooja Kumari, Chandan Saha, Kaushik Mallick

J. Appl. Phys. 134, 104501 (2023)

https://doi.org/10.1063/5.0165055

Published: September 2023

View article titled, Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

Includes: Supplementary data

Journal Articles

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Mahesh Kumar Yadav, Somnath S. Kundale, Santosh S. Sutar, Tukaram D. Dongale, Pradip Kumar, Neeraj Panwar

J. Appl. Phys. 134, 105101 (2023)

https://doi.org/10.1063/5.0159624

Published: September 2023

View article titled, Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Journal Articles

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Dongfang Chen, Shaoqing Liu, Xu Jiang, Jun Jiang

J. Appl. Phys. 134, 094101 (2023)

https://doi.org/10.1063/5.0168599

Published: September 2023

View article titled, Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Includes: Supplementary data

Journal Articles

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Yasuhisa Omura, Abhijit Mallik

J. Appl. Phys. 134, 065105 (2023)

https://doi.org/10.1063/5.0156183

Published: August 2023

View article titled, Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Journal Articles

Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

Chandra Prakash, Ambesh Dixit

J. Appl. Phys. 134, 044903 (2023)

https://doi.org/10.1063/5.0155463

Published: July 2023

View article titled, Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

Includes: Supplementary data

NARROW

Topics

Resistive switching behavior of quasi-2D CsPbBr₃ memristors: Impact of ambient atmosphere on logic storage and computing integration with anti-crosstalk and reconfiguration features

Large resistive switching in ultrathin BiFeO₃ thin films

Flexible memristors with low-operation voltage and high bending stability based on Cu₂AgBiI₆ perovskite

Observation of transient aspects of self-sustained oscillations and the role of parallel capacitance in VO₂-based planar devices

Observation and characterization of titanium-like nano-filament in TiO₂ memristor using superconducting electrode(s) and Andreev spectroscopy

Full factorial analysis of gradual switching in thermally oxidized memristive devices

Modeling defect-level switching for nonlinear and hysteretic electronic devices

Prospects for memristors with hysteretic memristance as so-far missing core hardware element for transfer-less data computing and storage

Nature of point defects in monolayer MoS₂ and the MoS₂/Au(111) heterojunction

Nonvolatile behavior of resistive switching memory in Ag/WO_x/TiO_y/ITO device based on WO_x/TiO_y heterojunction

Impact of laser energy density on engineering resistive switching dynamics in self-rectifying analog memristors based on BiFeO₃ thin films

Charge trapping-induced current–voltage hysteresis in a squaraine nanowire mesh enables synaptic memristive functionality

Modulation of insulator metal transition of VO₂ films grown on Al₂O₃ (001) and TiO₂ (001) substrates by the crystallization of capping Ge₂Sb₂Te₅ layer

Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching

Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers

Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Copper oxide memristor as artificial synapses emulating Hebbian symmetric and asymmetric learning behavior for neuromorphic computing beyond von Neumann architecture

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