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Journal Articles

Charge carrier recombination in TiO₂ and SrTiO₃ single crystals: Impact of CoO_x cocatalyst loading

Endong Zhang, Toru Takayoshi, Zhenhua Pan, Masashi Kato

J. Appl. Phys. 136, 205303 (2024)

https://doi.org/10.1063/5.0234709

Published: November 2024

View articletitled, Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading

Journal Articles

Magnetooptical gyrotropic effects in nanosized BiYIG films and diamagnetic YAG substrates

Yu. P. Sukhorukov, A. V. Telegin, I. D. Lobov, S. V. Naumov, S. S. Dubinin, K. A. Merencova, M. S. Artemyev, A. P. Nosov

J. Appl. Phys. 136, 193905 (2024)

https://doi.org/10.1063/5.0233868

Published: November 2024

View articletitled, Magnetooptical gyrotropic effects in nanosized BiYIG films and diamagnetic YAG substrates

Journal Articles

Interface defect state induced spin injection in organic magnetic tunnel junctions

Pamulapati Soujanya, Debajit Deb

J. Appl. Phys. 136, 143903 (2024)

https://doi.org/10.1063/5.0232653

Published: October 2024

View articletitled, Interface defect state induced spin injection in organic magnetic tunnel junctions

Journal Articles

A method to obtain the trapping energy and trapping range between hydrogen and defects at finite temperature

Zhengyang Ming, Ze Chen, Zhaofan Wang, Chao Yin, Shifeng Mao, Minyou Ye

J. Appl. Phys. 136, 085304 (2024)

https://doi.org/10.1063/5.0220312

Published: August 2024

View articletitled, A method to obtain the trapping energy and trapping range between hydrogen and defects at finite temperature

Journal Articles

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

N. Smith, J. Berens, G. Pobegen, T. Grasser, A. Shluger

J. Appl. Phys. 136, 085702 (2024)

https://doi.org/10.1063/5.0213528

Published: August 2024

View articletitled, Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Journal Articles

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

M. Weger, J. Kuegler, M. Nelhiebel, M. Moser, M. Bockstedte, G. Pobegen

J. Appl. Phys. 136, 034502 (2024)

https://doi.org/10.1063/5.0203724

Published: July 2024

View articletitled, Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Journal Articles

Theoretical study of the influence of GaO_x interfacial layer on the GaN/SiO₂ interface property

Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi

J. Appl. Phys. 135, 175303 (2024)

https://doi.org/10.1063/5.0204285

Published: May 2024

View articletitled, Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property

Journal Articles

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Stephen J. Moxim, Nicholas J. Harmon, Kenneth J. Myers, James P. Ashton, Elias B. Frantz, Michael E. Flatté, Patrick M. Lenahan, Jason T. Ryan

J. Appl. Phys. 135, 155703 (2024)

https://doi.org/10.1063/5.0203331

Published: April 2024

View articletitled, Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Journal Articles

An analytic descriptor for determining the effect of grain-boundary structures of metals on solute segregation

Xin Li, Yujun Li, Wang Gao

J. Appl. Phys. 135, 145303 (2024)

https://doi.org/10.1063/5.0198079

Published: April 2024

View articletitled, An analytic descriptor for determining the effect of grain-boundary structures of metals on solute segregation

Journal Articles

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Matthias Passlack, Nujhat Tasneem, Chinsung Park, Prasanna Venkat Ravindran, Hang Chen, Dipjyoti Das, Shimeng Yu, Edward Chen, Jer-Fu Wang, Chih-Sheng Chang, Yu-Ming Lin, Iuliana Radu, Asif Khan

J. Appl. Phys. 135, 134501 (2024)

https://doi.org/10.1063/5.0180919

Published: April 2024

View articletitled, The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Journal Articles

Carrier injection induced degradation of nitrogen passivated SiC–SiO₂ interface simulated by time-dependent density functional theory

Tao Xiong, Xiuming Dou, Wen-Feng Li, Hongyu Wen, Hui-Xiong Deng, Yue-Yang Liu

J. Appl. Phys. 135, 105701 (2024)

https://doi.org/10.1063/5.0190278

Published: March 2024

View articletitled, Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory

Journal Articles

O₂ and Ar plasma processing over SiO₂/Si stack: Effects of processing gas on interface defect generation and recovery

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori

J. Appl. Phys. 135, 053301 (2024)

https://doi.org/10.1063/5.0184779

Published: February 2024

View articletitled, O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery

Journal Articles

ZnO/SnO₂ bilayer electron transport layer strategy to improve the performance of FAPbI₃ solar cell

Xuli Ning, Yulong Wang, Xiaoqi Ren, Haikuo Guo, Haoran Yang, Jiali Wei, Jingwei Guo, Tiantian Li, Chengjun Zhu, Fuhua Hou

J. Appl. Phys. 135, 015301 (2024)

https://doi.org/10.1063/5.0170543

Published: January 2024

View articletitled, ZnO/SnO2 bilayer electron transport layer strategy to improve the performance of FAPbI3 solar cell

Journal Articles

Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

Boualem Djezzar

J. Appl. Phys. 134, 220701 (2023)

https://doi.org/10.1063/5.0176246

Published: December 2023

View articletitled, Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

Journal Articles

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

C. T.-K. Lew, V. K. Sewani, T. Ohshima, J. C. McCallum, B. C. Johnson

J. Appl. Phys. 134, 055703 (2023)

https://doi.org/10.1063/5.0167650

Published: August 2023

View articletitled, Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Journal Articles

Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO₂/SiO₂/Si transistors

S. J. Moxim, J. P. Ashton, M. A. Anders, J. T. Ryan

J. Appl. Phys. 133, 145702 (2023)

https://doi.org/10.1063/5.0145937

Published: April 2023

View articletitled, Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors

Journal Articles

Investigation of time variations of redox reactions in SrRuO₃ through interface-sensitive resistance measurements

Hiroshi Kambara, Hiroshi Shimazaki, Kenichi Tenya

J. Appl. Phys. 133, 125306 (2023)

https://doi.org/10.1063/5.0135695

Published: March 2023

View articletitled, Investigation of time variations of redox reactions in SrRuO3 through interface-sensitive resistance measurements

Includes: Supplementary data

Journal Articles

Publisher’s Note: “On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zr_x,Ti_1−x)O₃ ferroelectric thin films: A unique mechanism based on charge trapping by interface defects” [J. Appl. Phys. 133, 014101 (2023)]

Rachid Bouregba

J. Appl. Phys. 133, 039902 (2023)

https://doi.org/10.1063/5.0141379

Published: January 2023

View articletitled, Publisher’s Note: “On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zrx,Ti1−x)O3 ferroelectric thin films: A unique mechanism based on charge trapping by interface defects” [J. Appl. Phys. 133, 014101 (2023)]

Journal Articles

On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zr_x,Ti_1−x)O₃ ferroelectric thin films: A unique mechanism based on charge trapping by interface defects

Rachid Bouregba

J. Appl. Phys. 133, 014101 (2023)

https://doi.org/10.1063/5.0127530

Published: January 2023

View articletitled, On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zrx,Ti1−x)O3 ferroelectric thin films: A unique mechanism based on charge trapping by interface defects

Journal Articles

The introduction of carbon nanosheet buffer layer for enhanced hydrogen evolution performance of C₃N₄/CoP photocatalysts

Xiaochun Zheng, Shoutian Ren, Qixiao Gai, Yidi Wang, Wenjun Liu

J. Appl. Phys. 132, 185305 (2022)

https://doi.org/10.1063/5.0112887

Published: November 2022

View articletitled, The introduction of carbon nanosheet buffer layer for enhanced hydrogen evolution performance of C3N4/CoP photocatalysts

Includes: Supplementary data

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Charge carrier recombination in TiO₂ and SrTiO₃ single crystals: Impact of CoO_x cocatalyst loading

Magnetooptical gyrotropic effects in nanosized BiYIG films and diamagnetic YAG substrates

Interface defect state induced spin injection in organic magnetic tunnel junctions

A method to obtain the trapping energy and trapping range between hydrogen and defects at finite temperature

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Theoretical study of the influence of GaO_x interfacial layer on the GaN/SiO₂ interface property

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

An analytic descriptor for determining the effect of grain-boundary structures of metals on solute segregation

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Carrier injection induced degradation of nitrogen passivated SiC–SiO₂ interface simulated by time-dependent density functional theory

O₂ and Ar plasma processing over SiO₂/Si stack: Effects of processing gas on interface defect generation and recovery

ZnO/SnO₂ bilayer electron transport layer strategy to improve the performance of FAPbI₃ solar cell

Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO₂/SiO₂/Si transistors

Investigation of time variations of redox reactions in SrRuO₃ through interface-sensitive resistance measurements

Publisher’s Note: “On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zr_x,Ti_1−x)O₃ ferroelectric thin films: A unique mechanism based on charge trapping by interface defects” [J. Appl. Phys. 133, 014101 (2023)]

On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zr_x,Ti_1−x)O₃ ferroelectric thin films: A unique mechanism based on charge trapping by interface defects

The introduction of carbon nanosheet buffer layer for enhanced hydrogen evolution performance of C₃N₄/CoP photocatalysts

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