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Journal Articles

Impacts of silicon carbide defects on electrical characteristics of SiC devices

Lingling Lai, Yingxin Cui, Yu Zhong, Kuan Yew Cheong, Handoko Linewih, Xiangang Xu, Jisheng Han
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 060701 (2025)
https://doi.org/10.1063/5.0239362
Published: February 2025
View article titled, Impacts of silicon carbide defects on electrical characteristics of SiC devices
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Journal Articles

Investigation of the solar cell materials Cu(In,Ga)Se2 and Cu2ZnSnS4 with muon spin spectroscopy and density-functional calculations

R. C. Vilão, A. G. Marinopoulos, D. G. Santos, H. V. Alberto, J. M. Gil, P. W. Mengyan, M. Kauk-Kuusik, J. S. Lord, A. Weidinger
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055704 (2024)
https://doi.org/10.1063/5.0205837
Published: August 2024
View article titled, Investigation of the solar cell materials Cu(In,Ga)Se<sub>2</sub> and Cu<sub>2</sub>ZnSnS<sub>4</sub> with muon spin spectroscopy and density-functional calculations
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Journal Articles

Quantification of the strong, phonon-induced Urbach tails in β-Ga2O3 and their implications on electrical breakdown

Ariful Islam, Nathan David Rock, Michael A. Scarpulla
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 035701 (2024)
https://doi.org/10.1063/5.0211588
Published: July 2024
View article titled, Quantification of the strong, phonon-induced Urbach tails in β-Ga<sub>2</sub>O<sub>3</sub> and their implications on electrical breakdown
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Journal Articles

Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers

Fumihiro Fujie, Tsubasa Shiono, Koichi Murata, Naoto Ishibashi, Yuichiro Mabuchi, Hidekazu Tsuchida
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235706 (2024)
https://doi.org/10.1063/5.0210422
Published: June 2024
View article titled, Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers
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Journal Articles

Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels

Yuanchao Huang, Rong Wang, Deren Yang, Xiaodong Pi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195703 (2024)
https://doi.org/10.1063/5.0190242
Published: May 2024
View article titled, Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels
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Journal Articles

Hydrogen passivation of acceptor defects in delafossite CuMO2 (M = Al, Ga, In): Insights for enhanced p-type conductivity

Aroon Ananchuensook, Intuon Chatratin, Anderson Janotti, Teeraphat Watcharatharapong, Jiraroj T-Thienprasert, Adisak Boonchun, Sirichok Jungthawan, Pakpoom Reunchan
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 185705 (2024)
https://doi.org/10.1063/5.0201483
Published: May 2024
View article titled, Hydrogen passivation of acceptor defects in delafossite CuMO<sub>2</sub> (M = Al, Ga, In): Insights for enhanced p-type conductivity
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Journal Articles

Synchrotron radiation x-ray topography applied to nitride semiconductor crystals

Qirui Zhang, Songyang Lv, Lei Liu, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Lingshuang Lv, Xiangang Xu, Lei Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 180701 (2024)
https://doi.org/10.1063/5.0199146
Published: May 2024
View article titled, Synchrotron radiation x-ray topography applied to nitride semiconductor crystals
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Journal Articles

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Fabio Isa, Javier A. Schmidt, Stefano Aghion, Enrico Napolitani, Giovanni Isella, Rafael Ferragut
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165704 (2024)
https://doi.org/10.1063/5.0179101
Published: April 2024
View article titled, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon
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Journal Articles

Deep selenium donors in ZnGeP2 crystals: An electron paramagnetic resonance study of a nonlinear optical material

T. D. Gustafson, L. E. Halliburton, N. C. Giles, P. G. Schunemann, K. T. Zawilski, J. Jesenovec, K. L. Averett, J. E. Slagle
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 155704 (2024)
https://doi.org/10.1063/5.0205739
Published: April 2024
View article titled, Deep selenium donors in ZnGeP<sub>2</sub> crystals: An electron paramagnetic resonance study of a nonlinear optical material
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Journal Articles

Understanding layered compounds under high pressure

J. Pellicer-Porres
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 091101 (2024)
https://doi.org/10.1063/5.0190274
Published: March 2024
View article titled, Understanding layered compounds under high pressure
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Journal Articles

Strained AlGaInAs on InP: Bandgap dependence on composition—Model benchmark and optimization

Marcin Zyskowski, Nick de Louw, Steven Kleijn, Francisco Javier Díaz Otero
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 243103 (2023)
https://doi.org/10.1063/5.0173760
Published: December 2023
View article titled, Strained AlGaInAs on InP: Bandgap dependence on composition—Model benchmark and optimization
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Journal Articles

Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

M. Holiatkina, A. Pöppl, E. Kalabukhova, J. Lančok, D. Savchenko
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 145702 (2023)
https://doi.org/10.1063/5.0172320
Published: October 2023
View article titled, Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations
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Journal Articles

Thermodynamic analysis of oxide vapor phase epitaxy of GaN

Yuki Sakurai, Shigeyoshi Usami, Masayuki Imanishi, Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Mihoko Maruyama, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, Yusuke Mori
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085704 (2023)
https://doi.org/10.1063/5.0160106
Published: August 2023
View article titled, Thermodynamic analysis of oxide vapor phase epitaxy of GaN
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Journal Articles

Intrinsic point defects (vacancies and antisites) in CdGeP2 crystals

T. D. Gustafson, N. C. Giles, P. G. Schunemann, K. T. Zawilski, K. L. Averett, J. E. Slagle, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 245703 (2023)
https://doi.org/10.1063/5.0156144
Published: June 2023
View article titled, Intrinsic point defects (vacancies and antisites) in CdGeP<sub>2</sub> crystals
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Journal Articles

Erratum: “Raman study of Cd1−xZnxTe phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)]

T. Alhaddad, M. B. Shoker, O. Pagès, A. V. Postnikov, V. J. B. Torres, A. Polian, Y. Le Godec, J.-P. Itié, L. Broch, M. B. Bouzourâa, A. En Naciri, S. Diliberto, S. Michel, P. Franchetti, A. Marasek, K. Strzałkowski
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 139901 (2023)
https://doi.org/10.1063/5.0150353
Published: April 2023
View article titled, Erratum: “Raman study of Cd<sub>1−<em>x</em></sub>Zn<em><sub>x</sub></em>Te phonons and phonon-polaritons – Experiment and <em>ab initio</em> calculations” [J. Appl. Phys. 133, 065701 (2023)]
Open the PDF for Erratum: “Raman study of Cd<sub>1−<em>x</em></sub>Zn<em><sub>x</sub></em>Te phonons and phonon-polaritons – Experiment and <em>ab initio</em> calculations” [J. Appl. Phys. 133, 065701 (2023)] in another window
Journal Articles

Erratum: “Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals” [J. Appl. Phys. 132, 175101 (2022)]

O. Ambacher, S. Mihalic, E. Wade, M. Yassine, A. Yassine, N. Feil, B. Christian
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 249901 (2022)
https://doi.org/10.1063/5.0134565
Published: December 2022
View article titled, Erratum: “Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal Sc<em><sub>x</sub></em>Al<sub>1−<em>x</em></sub>N crystals” [J. Appl. Phys. 132, 175101 (2022)]
Open the PDF for Erratum: “Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal Sc<em><sub>x</sub></em>Al<sub>1−<em>x</em></sub>N crystals” [J. Appl. Phys. 132, 175101 (2022)] in another window
Journal Articles

Transition-metal ions in β-Ga2O3 crystals: Identification of Ni acceptors

T. D. Gustafson, N. C. Giles, B. C. Holloway, J. Jesenovec, B. L. Dutton, J. S. McCloy, M. D. McCluskey, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 185705 (2022)
https://doi.org/10.1063/5.0126467
Published: November 2022
View article titled, Transition-metal ions in β-Ga<sub>2</sub>O<sub>3</sub> crystals: Identification of Ni acceptors
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Journal Articles

Propagation of dislocations in diamond (111) homoepitaxial layer

Kimiyoshi Ichikawa, Satoshi Koizumi, Tokuyuki Teraji
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 025302 (2022)
https://doi.org/10.1063/5.0096444
Published: July 2022
View article titled, Propagation of dislocations in diamond (111) homoepitaxial layer
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Journal Articles

N2, NO, and O2 molecules in LiGaO2 in both Ga and Li sites and their relation to the vacancies

Klichchupong Dabsamut, Adisak Boonchun, Walter R. L. Lambrecht
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 145705 (2022)
https://doi.org/10.1063/5.0085366
Published: April 2022
View article titled, N<sub>2</sub>, NO, and O<sub>2</sub> molecules in LiGaO<sub>2</sub> in both Ga and Li sites and their relation to the vacancies
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Includes: Supplementary data
Journal Articles

Cu2+ and Cu3+ acceptors in β-Ga2O3 crystals: A magnetic resonance and optical absorption study

T. D. Gustafson, N. C. Giles, B. C. Holloway, C. A. Lenyk, J. Jesenovec, J. S. McCloy, M. D. McCluskey, L. E. Halliburton
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 065702 (2022)
https://doi.org/10.1063/5.0080502
Published: February 2022
View article titled, Cu<sup>2+</sup> and Cu<sup>3+</sup> acceptors in β-Ga<sub>2</sub>O<sub>3</sub> crystals: A magnetic resonance and optical absorption study
Open the PDF for Cu<sup>2+</sup> and Cu<sup>3+</sup> acceptors in β-Ga<sub>2</sub>O<sub>3</sub> crystals: A magnetic resonance and optical absorption study in another window