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Journal Articles

Low-energy atomic and molecular hydrogen ion interaction with low-work function electride 12CaO · 7 A l 2 O 3

Hitoshi Yamaoka, Nozomi Tanaka, Mayuko Nishiwaki, Ippei Yamada, Mamiko Sasao, Yoshikatsu Matsumoto, Katsuyoshi Tsumori, Motoi Wada
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043306 (2024)
https://doi.org/10.1063/5.0212246
Published: July 2024
View article titled, Low-energy atomic and molecular hydrogen ion interaction with low-work function electride 12CaO · 7 A l 2 O 3
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Journal Articles

Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

Lanpeng Qiang, Emmanuel Chereau, Philippe Regreny, Geoffrey Avit, Agnès Trassoudaine, Evelyne Gil, Yamina André, Jean-Marie Bluet, David Albertini, Georges Brémond
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 034301 (2024)
https://doi.org/10.1063/5.0215140
Published: July 2024
View article titled, Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
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Journal Articles

Theoretical modeling of defect diffusion in wide bandgap semiconductors

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Ylva Knausgård Hommedal, Marianne Etzelmüller Bathen, Vilde Mari Reinertsen, Klaus Magnus Johansen, Lasse Vines, Ymir Kalmann Frodason
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 170902 (2024)
https://doi.org/10.1063/5.0205866
Published: May 2024
View article titled, Theoretical modeling of defect diffusion in wide bandgap semiconductors
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Journal Articles

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

L. Sun, P. Kruszewski, V. P. Markevich, C. A. Dawe, A. R. Peaker, I. F. Crowe, J. Plesiewicz, P. Prystawko, Sz. Grzanka, E. Grzanka, R. Jakiela, D. Binks, M. P. Halsall
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 175702 (2024)
https://doi.org/10.1063/5.0205998
Published: May 2024
View article titled, The effect of Fe<sub>Ga</sub> (0/–) level presence on material properties in dilute Al<sub>x</sub>Ga<sub>1−x</sub>N layers
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Journal Articles

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Fabio Isa, Javier A. Schmidt, Stefano Aghion, Enrico Napolitani, Giovanni Isella, Rafael Ferragut
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165704 (2024)
https://doi.org/10.1063/5.0179101
Published: April 2024
View article titled, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon
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Journal Articles

Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply

Muhamad Mustofa, Katsuhiko Saito, Qixin Guo, Tooru Tanaka
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 193101 (2023)
https://doi.org/10.1063/5.0178803
Published: November 2023
View article titled, Improved phosphorus doping in ZnTe by molecular beam epitaxy under alternating source supply
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Journal Articles

Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

Balasubramanian Sundarapandian, Ali Yassine, Lutz Kirste, Martina Baeumler, Patrik Straňák, Evelin Fisslthaler, Mario Prescher, Mohamed Yassine, Akash Nair, Mohit Raghuwanshi, Oliver Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 185107 (2023)
https://doi.org/10.1063/5.0171167
Published: November 2023
View article titled, Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
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Journal Articles

Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, Peter Ramvall
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 035701 (2023)
https://doi.org/10.1063/5.0139114
Published: July 2023
View article titled, Acceptor activation of Mg-doped GaN—Effects of N<sub>2</sub>/O<sub>2</sub> vs N<sub>2</sub> as ambient gas during annealing
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Includes: Supplementary data
Journal Articles

Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition

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H. Alex Hsain, Younghwan Lee, Patrick D. Lomenzo, Ruben Alcala, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N. Parsons, Jacob L. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 225304 (2023)
https://doi.org/10.1063/5.0147124
Published: June 2023
View article titled, Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition
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Includes: Supplementary data
Journal Articles

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245102 (2022)
https://doi.org/10.1063/5.0099136
Published: December 2022
View article titled, Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions
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Journal Articles

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO2 interface after NO annealing

Naoki Komatsu, Mizuho Ohmoto, Mitsuharu Uemoto, Tomoya Ono
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 155701 (2022)
https://doi.org/10.1063/5.0102472
Published: October 2022
View article titled, Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO<sub>2</sub> interface after NO annealing
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Includes: Supplementary data
Journal Articles

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 185701 (2022)
https://doi.org/10.1063/5.0087248
Published: May 2022
View article titled, Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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Journal Articles

Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films

A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng, Andreas Fiedler, Hsien-Lien Huang, Adam T. Neal, Erich Steinbrunner, Shin Mou, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 145301 (2022)
https://doi.org/10.1063/5.0084062
Published: April 2022
View article titled, Si doping in MOCVD grown (010) β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films
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Journal Articles

Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3 ( 010 ) interface

Hannah N. Masten, Jamie D. Phillips, Rebecca L. Peterson
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 035106 (2022)
https://doi.org/10.1063/5.0070105
Published: January 2022
View article titled, Effects of high temperature annealing on the atomic layer deposited HfO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> ( 010 ) interface
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Journal Articles

Polarity reversal of resistance response to trace H2 gas in the air between asymmetrically shaped electrodes on rutile-TiO2 single crystal

T. T. Suzuki, T. Ohgaki, Y. Adachi, I. Sakaguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 034501 (2022)
https://doi.org/10.1063/5.0078296
Published: January 2022
View article titled, Polarity reversal of resistance response to trace H<sub>2</sub> gas in the air between asymmetrically shaped electrodes on rutile-TiO<sub>2</sub> single crystal
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Journal Articles

The effect of annealing on photoluminescence from defects in ammonothermal GaN

M. A. Reshchikov, D. O. Demchenko, D. Ye, O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 035704 (2022)
https://doi.org/10.1063/5.0077796
Published: January 2022
View article titled, The effect of annealing on photoluminescence from defects in ammonothermal GaN
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Journal Articles

Ga-ion beam surface modification of glass using a custom-built liquid metal ion beam

Byeong Jun Cha, Woo Jun Byeon, Chang Min Choi, Boo Ki Min, Jinwan Cho, Ji Young Baek, Young Dok Kim, Myoung Choul Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 014901 (2022)
https://doi.org/10.1063/5.0071815
Published: January 2022
View article titled, Ga-ion beam surface modification of glass using a custom-built liquid metal ion beam
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Journal Articles

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Dennis Szymanski, Dolar Khachariya, Tim B. Eldred, Pegah Bagheri, Shun Washiyama, Alexander Chang, Spyridon Pavlidis, Ronny Kirste, Pramod Reddy, Erhard Kohn, Lincoln Lauhon, Ramon Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 015703 (2022)
https://doi.org/10.1063/5.0076044
Published: January 2022
View article titled, GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
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Journal Articles

Nitrogen diffusion in zinc oxide

N. H. Nickel, M. A. Gluba
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 245702 (2021)
https://doi.org/10.1063/5.0070510
Published: December 2021
View article titled, Nitrogen diffusion in zinc oxide
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Journal Articles

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

Leonardo Cancellara, Toni Markurt, Tobias Schulz, Martin Albrecht, Sylvia Hagedorn, Sebastian Walde, Markus Weyers, Shun Washiyama, Ramon Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 203101 (2021)
https://doi.org/10.1063/5.0065935
Published: November 2021
View article titled, Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
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Includes: Supplementary data