1-20 of 282
Schottky barriers
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165703 (2024)
https://doi.org/10.1063/5.0203526
Published: April 2024
View article titled, Trap states and carrier diffusion lengths in NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunctions
Open the PDF for Trap states and carrier diffusion lengths in NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunctions in another window
Journal Articles

Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

Haoxin Li, Zhao Han, Xuanze Zhou, Guangwei Xu, Shibing Long
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 114501 (2024)
https://doi.org/10.1063/5.0195890
Published: March 2024
View article titled, Negative bias stress stable PtO<sub>x</sub>/InGaZnO<sub>x</sub> Schottky barrier diodes optimized by oxygen annealing
Open the PDF for Negative bias stress stable PtO<sub>x</sub>/InGaZnO<sub>x</sub> Schottky barrier diodes optimized by oxygen annealing in another window
Journal Articles

Verification of modulation mechanism of the interfacial dipole effect by changing the stacking sequence of monatomic layers in perovskite oxides

Atsushi Tamura, Koji Kita
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 235301 (2023)
https://doi.org/10.1063/5.0169529
Published: December 2023
View article titled, Verification of modulation mechanism of the interfacial dipole effect by changing the stacking sequence of monatomic layers in perovskite oxides
Open the PDF for Verification of modulation mechanism of the interfacial dipole effect by changing the stacking sequence of monatomic layers in perovskite oxides in another window
Journal Articles

Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts

Fan Zhang, Rongxin Wang, Fangzhi Li, Aiqin Tian, Jianping Liu, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 055302 (2023)
https://doi.org/10.1063/5.0140421
Published: August 2023
View article titled, Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts
Open the PDF for Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts in another window
Journal Articles

Spinodal decomposition-derived giant polarization in TiO2–SnO2 generated from a metastable phase

Takashi Teranishi, Hideki Matsui, Shinya Kondo, Akira Kishimoto
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 174101 (2023)
https://doi.org/10.1063/5.0144782
Published: May 2023
View article titled, Spinodal decomposition-derived giant polarization in TiO<sub>2</sub>–SnO<sub>2</sub> generated from a metastable phase
Open the PDF for Spinodal decomposition-derived giant polarization in TiO<sub>2</sub>–SnO<sub>2</sub> generated from a metastable phase in another window
Journal Articles

Frequency modulations due to domain dynamics in terahertz quantum cascade lasers

E. Önder, D. O. Winge, M. Franckié, A. Forrer, U. Senica, G. Scalari, A. Wacker
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 123101 (2023)
https://doi.org/10.1063/5.0137716
Published: March 2023
View article titled, Frequency modulations due to domain dynamics in terahertz quantum cascade lasers
Open the PDF for Frequency modulations due to domain dynamics in terahertz quantum cascade lasers in another window
Journal Articles

Superior dielectric and varistor properties of ZnO or SnO2 diffused calcium copper titanate ceramics

Lokeswararao Dhavala, Sai Muthukumar V, Vijay Sai Kollipara, Varma Kalidindi B. R.
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 094103 (2023)
https://doi.org/10.1063/5.0139359
Published: March 2023
View article titled, Superior dielectric and varistor properties of ZnO or SnO<sub>2</sub> diffused calcium copper titanate ceramics
Open the PDF for Superior dielectric and varistor properties of ZnO or SnO<sub>2</sub> diffused calcium copper titanate ceramics in another window
Includes: Supplementary data
Journal Articles

High-performance Al-doped ZnO flexible ultraviolet photodetector via piezo-phototronic effect

Xiao-ling Lu, Xiao-bin Guo, Feng-chao Su, Zheng Su, Wen-hai Qiu, Yan-ping Jiang, Wen-hua Li, Zhen-hua Tang, Xin-gui Tang
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 075301 (2023)
https://doi.org/10.1063/5.0133534
Published: February 2023
View article titled, High-performance Al-doped ZnO flexible ultraviolet photodetector via piezo-phototronic effect
Open the PDF for High-performance Al-doped ZnO flexible ultraviolet photodetector via piezo-phototronic effect in another window
Journal Articles

The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Taehoon Park, Hakcheon Jeong, See-On Park, Seok Man Hong, Seokho Seo, Seungwoo Park, Shinhyun Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 075701 (2023)
https://doi.org/10.1063/5.0131593
Published: February 2023
View article titled, The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WO<sub>x</sub>/p-Si based memristor
Open the PDF for The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WO<sub>x</sub>/p-Si based memristor in another window
Journal Articles

Transient conduction of ZnO varistors under moderate time-varying voltages: Dynamics of interfacial charges of the double Schottky barrier

Zhuolin Cheng, Zongke Hou, Tong Wu, Yao Wang, Rou Li, Ying Lin, Jianying Li, Shengtao Li, Kangning Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 054101 (2023)
https://doi.org/10.1063/5.0127816
Published: February 2023
View article titled, Transient conduction of ZnO varistors under moderate time-varying voltages: Dynamics of interfacial charges of the double Schottky barrier
Open the PDF for Transient conduction of ZnO varistors under moderate time-varying voltages: Dynamics of interfacial charges of the double Schottky barrier in another window
Includes: Supplementary data
Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 045702 (2023)
https://doi.org/10.1063/5.0121416
Published: January 2023
View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Proton radiation effects on electronic defect states in MOCVD-grown (010) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245102 (2022)
https://doi.org/10.1063/5.0099136
Published: December 2022
View article titled, Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions
Open the PDF for Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions in another window
Journal Articles

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Editor’s Pick
A. Mazzoni, R. Burke, M. Chin, S. Najmaei, M. Dubey, N. Goldsman, K. Daniels
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 224305 (2022)
https://doi.org/10.1063/5.0124105
Published: December 2022
View article titled, Comparison of contact metals evaporated onto monolayer molybdenum disulfide
Open the PDF for Comparison of contact metals evaporated onto monolayer molybdenum disulfide in another window
Includes: Supplementary data
Journal Articles

Transition of the colossal permittivity related dielectric relaxation in V-doped CaCu3Ti4O12 ceramics

Kangning Wu, Rou Li, Ran Jia, Zhuang Tang, Ying Lin, Jianying Li
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 164103 (2022)
https://doi.org/10.1063/5.0112436
Published: October 2022
View article titled, Transition of the colossal permittivity related dielectric relaxation in V-doped CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> ceramics
Open the PDF for Transition of the colossal permittivity related dielectric relaxation in V-doped CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> ceramics in another window
Includes: Supplementary data
Journal Articles

Graphene/Cs2PbI2Cl2 van der Waals heterostructure with tunable Schottky barriers and contact types

Min Wang, Ting-Ping Hou, Kai-Ming Wu, Heng-Fu Lin
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165101 (2022)
https://doi.org/10.1063/5.0104799
Published: October 2022
View article titled, Graphene/Cs<sub>2</sub>PbI<sub>2</sub>Cl<sub>2</sub> van der Waals heterostructure with tunable Schottky barriers and contact types
Open the PDF for Graphene/Cs<sub>2</sub>PbI<sub>2</sub>Cl<sub>2</sub> van der Waals heterostructure with tunable Schottky barriers and contact types in another window
Includes: Supplementary data
Journal Articles

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

Xiao Wang, Ananth Dodabalapur
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 044501 (2022)
https://doi.org/10.1063/5.0083876
Published: July 2022
View article titled, Modeling of thin-film transistor device characteristics based on fundamental charge transport physics
Open the PDF for Modeling of thin-film transistor device characteristics based on fundamental charge transport physics in another window
Includes: Supplementary data
Journal Articles

Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling

S. Ramesh, Ts. Ivanov, A. Sibaja-Hernandez, A. Alian, E. Camerotto, A. Milenin, N. Pinna, S. El Kazzi, D. Lin, P. Lagrain, P. Favia, H. Bender, N. Collaert, K. De Meyer
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 024302 (2022)
https://doi.org/10.1063/5.0092535
Published: July 2022
View article titled, Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling
Open the PDF for Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling in another window
Journal Articles

Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate

Genqiang Chen, Wei Wang, Shi He, Juan Wang, Shumiao Zhang, Minghui Zhang, Hong-Xing Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 015702 (2022)
https://doi.org/10.1063/5.0098804
Published: July 2022
View article titled, Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate
Open the PDF for Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate in another window
Journal Articles

Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces

Daram N. Ramdin, Micah S. Haseman, Hsien-Lien Huang, Kevin D. Leedy, Jinwoo Hwang, Leonard J. Brillson
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 205302 (2022)
https://doi.org/10.1063/5.0090161
Published: May 2022
View article titled, Optical and electronic effects of rapid thermal annealing at Ir–Ga<sub>2</sub>O<sub>3</sub> interfaces
Open the PDF for Optical and electronic effects of rapid thermal annealing at Ir–Ga<sub>2</sub>O<sub>3</sub> interfaces in another window
Includes: Supplementary data
Journal Articles

1 GeV proton damage in β-Ga2O3

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 185701 (2021)
https://doi.org/10.1063/5.0068306
Published: November 2021
View article titled, 1 GeV proton damage in β-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for 1 GeV proton damage in β-Ga<sub>2</sub>O<sub>3</sub> in another window
Includes: Supplementary data