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Journal Articles

Positron annihilation spectroscopy guided by two-component density functional theory calculations distinguishes irradiation-induced vacancy type in 4H-SiC

Open Access
Jian Li, Jianrong Sun, Yinan Tian, Wei Zhang, Hailong Chang, Pengcheng Gao
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 145905 (2024)
https://doi.org/10.1063/5.0226531
Published: October 2024
View articletitled, Positron annihilation spectroscopy guided by two-component density functional theory calculations distinguishes irradiation-induced vacancy type in 4H-SiC
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Journal Articles

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Open Access
Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 185701 (2024)
https://doi.org/10.1063/5.0201931
Published: May 2024
View articletitled, Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
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Journal Articles

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Open Access
Fabio Isa, Javier A. Schmidt, Stefano Aghion, Enrico Napolitani, Giovanni Isella, Rafael Ferragut
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165704 (2024)
https://doi.org/10.1063/5.0179101
Published: April 2024
View articletitled, Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon
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Journal Articles

Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics

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Juanmei Duan, Maciej O. Liedke, Wojciech Dawidowski, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095102 (2023)
https://doi.org/10.1063/5.0151582
Published: September 2023
View articletitled, Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
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Journal Articles

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

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Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185702 (2023)
https://doi.org/10.1063/5.0142766
Published: May 2023
View articletitled, Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
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Journal Articles

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

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R. Auguste, M. O. Liedke, M. Butterling, B. P. Uberuaga, F. A. Selim, A. Wagner, P. Hosemann
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185901 (2023)
https://doi.org/10.1063/5.0144308
Published: May 2023
View articletitled, In situ measurements of non-equilibrium positron state defects during He irradiation in Si
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Journal Articles

Theoretical study on the correlation of swelling peaks between neutron and heavy ion irradiated 15-15Ti stainless steel

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A.-Li Wen, Qiao-Li Zhang, Ping Fan, Hai-Liang Ma, Ke Li, Cui-Lan Ren, He-Fei Huang, Sheng-yun Zhu, Da-Qing Yuan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 225902 (2022)
https://doi.org/10.1063/5.0103468
Published: December 2022
View articletitled, Theoretical study on the correlation of swelling peaks between neutron and heavy ion irradiated 15-15Ti stainless steel
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Journal Articles

Interface effect of Fe and Fe2O3 on the distributions of ion induced defects

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Hyosim Kim, Matthew R. Chancey, Thaihang Chung, Ian Brackenbury, Maciej O. Liedke, Maik Butterling, Eric Hirschmann, Andreas Wagner, Jon K. Baldwin, Ben K. Derby, Nan Li, Kayla H. Yano, Danny J. Edwards, Yongqiang Wang, Farida A. Selim
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 105901 (2022)
https://doi.org/10.1063/5.0095013
Published: September 2022
View articletitled, Interface effect of Fe and Fe2O3 on the distributions of ion induced defects
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Journal Articles

Theoretical investigation of charged vacancies and clusters in UXO2 (X = La, Ce, Pu, Am)

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J. Bouchet, R. M. Dianzinga, G. Jomard
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 075110 (2022)
https://doi.org/10.1063/5.0098635
Published: August 2022
View articletitled, Theoretical investigation of charged vacancies and clusters in UXO2 (X = La, Ce, Pu, Am)
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Journal Articles

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

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Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, Nobuyuki Ikarashi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 065703 (2022)
https://doi.org/10.1063/5.0097866
Published: August 2022
View articletitled, Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
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Journal Articles

Point defect creation by proton and carbon irradiation of α-Ga2O3

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Alexander Y. Polyakov, Vladimir I. Nikolaev, Igor N. Meshkov, Krzysztof Siemek, Petr B. Lagov, Eugene B. Yakimov, Alexei I. Pechnikov, Oleg S. Orlov, Alexey A. Sidorin, Sergey I. Stepanov, Ivan V. Shchemerov, Anton A. Vasilev, Alexey V. Chernykh, Anton A. Losev, Alexandr D. Miliachenko, Igor A. Khrisanov, Yu.S. Pavlov, U. A. Kobets, Stephen J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 035701 (2022)
https://doi.org/10.1063/5.0100359
Published: July 2022
View articletitled, Point defect creation by proton and carbon irradiation of α-Ga2O3
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Includes: Supplementary data
Journal Articles

Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy

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Afrina Khanam, Jonatan Slotte, Filip Tuomisto, Subhali Subhechha, Mihaela Popovici, Gouri Sankar Kar
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 245301 (2022)
https://doi.org/10.1063/5.0094558
Published: June 2022
View articletitled, Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy
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Journal Articles

The mechanism behind the high radiation tolerance of Fe–Cr alloys

Editor’s PickOpen Access
S. Agarwal, M. Butterling, M. O. Liedke, K. H. Yano, D. K. Schreiber, A. C. L. Jones, B. P. Uberuaga, Y. Q. Wang, M. Chancey, H. Kim, B. K. Derby, N. Li, D. J. Edwards, P. Hosemann, D. Kaoumi, E. Hirschmann, A. Wagner, F. A. Selim
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 125903 (2022)
https://doi.org/10.1063/5.0085086
Published: March 2022
View articletitled, The mechanism behind the high radiation tolerance of Fe–Cr alloys
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Journal Articles

Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering

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A. Miyashita, M. Maekawa, C. Suzuki, S. Yamamoto, A. Kawasuso, J. Wang, T. Seki, R. Y. Umetsu, K. Takanashi
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 225301 (2021)
https://doi.org/10.1063/5.0071807
Published: December 2021
View articletitled, Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering
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Journal Articles

Positron annihilation lifetime spectroscopy: When is it feasible to decompose the spectrum?

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J. V. Logan, S. W. McAlpine, P. T. Webster, C. P. Morath, M. P. Short
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 145104 (2021)
https://doi.org/10.1063/5.0049304
Published: October 2021
View articletitled, Positron annihilation lifetime spectroscopy: When is it feasible to decompose the spectrum?
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Journal Articles

Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

Editor’s PickAvailable to Purchase
Anurag Vohra, Geoffrey Pourtois, Roger Loo, Wilfried Vandervorst
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 125702 (2021)
https://doi.org/10.1063/5.0064952
Published: September 2021
View articletitled, Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation
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Journal Articles

Neutron irradiation induced defects in oxides and their impact on the oxide properties

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M. Haseman, C. B. Somodi, P. Stepanov, D. E. Wall, L. A. Boatner, P. Hosemann, Y. Q. Wang, B. P. Uberuaga, F. A. Selim
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 215901 (2021)
https://doi.org/10.1063/5.0046292
Published: June 2021
View articletitled, Neutron irradiation induced defects in oxides and their impact on the oxide properties
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Journal Articles

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

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Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F. Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 085704 (2020)
https://doi.org/10.1063/5.0015225
Published: August 2020
View articletitled, Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
Open the PDF for Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams in another window
Journal Articles

More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques

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J. V. Logan, M. P. Short, P. T. Webster, C. P. Morath
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 045105 (2020)
https://doi.org/10.1063/5.0011021
Published: July 2020
View articletitled, More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques
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Includes: Supplementary data
Journal Articles

TiSr antisite: An abundant point defect in SrTiO3

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Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Christo Guguschev, Toni Markurt, Matthias Bickermann, Filip Tuomisto
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 245702 (2020)
https://doi.org/10.1063/5.0010304
Published: June 2020
View articletitled, TiSr antisite: An abundant point defect in SrTiO3
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