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Journal Articles

Superconducting titanium nitride films grown by directional reactive evaporation

Raymond Mencia, Yen-Hsiang Lin, Vladimir Manucharyan

J. Appl. Phys. 130, 225109 (2021)

https://doi.org/10.1063/5.0048819

Published: December 2021

View article titled, Superconducting titanium nitride films grown by directional reactive evaporation

Journal Articles

Ultrafast dynamics and short-lived carriers in Cu nitride and oxynitride layers

Marios Sergides, Matthew Zervos, Andreas Othonos

J. Appl. Phys. 128, 125704 (2020)

https://doi.org/10.1063/5.0022758

Published: September 2020

View article titled, Ultrafast dynamics and short-lived carriers in Cu nitride and oxynitride layers

Journal Articles

Optical and structural investigations on titanium oxynitride films for visible-UV photocatalytic applications

Jun Mizushiro, Kohei Yoshimatsu, Naoki Ohashi, Masahiko Tanaka, Osami Sakata, Akira Ohtomo

J. Appl. Phys. 127, 135301 (2020)

https://doi.org/10.1063/1.5143609

Published: April 2020

View article titled, Optical and structural investigations on titanium oxynitride films for visible-UV photocatalytic applications

Journal Articles

Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices

M. A. Gribelyuk, B. Fu, W. W. Zhao

J. Appl. Phys. 125, 165306 (2019)

https://doi.org/10.1063/1.5083952

Published: April 2019

View article titled, Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices

Journal Articles

Investigation of the mechanism of enhanced and directed differentiation of neural stem cells by an atmospheric plasma jet: A gene-level study

Shasha Zhao, Rui Han, Yuan Li, Chen Lu, Xingyu Chen, Zilan Xiong, Xiang Mao

J. Appl. Phys. 125, 163301 (2019)

https://doi.org/10.1063/1.5060650

Published: April 2019

View article titled, Investigation of the mechanism of enhanced and directed differentiation of neural stem cells by an atmospheric plasma jet: A gene-level study

Includes: Supplementary data

Journal Articles

Enhanced surface passivation of predictable quantum efficient detectors by silicon nitride and silicon oxynitride/silicon nitride stack

Therese Sørheim Stokkan, Halvard Haug, Chi Kwong Tang, Erik Stensrud Marstein, Jarle Gran

J. Appl. Phys. 124, 214502 (2018)

https://doi.org/10.1063/1.5054696

Published: December 2018

View article titled, Enhanced surface passivation of predictable quantum efficient detectors by silicon nitride and silicon oxynitride/silicon nitride stack

Journal Articles

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Jaya Jha, Bhanu B. Upadhyay, Kuldeep Takhar, Navneet Bhardwaj, Swaroop Ganguly, Dipankar Saha

J. Appl. Phys. 124, 165704 (2018)

https://doi.org/10.1063/1.5044590

Published: October 2018

View article titled, Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal Articles

A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

Dan Berco, Umesh Chand, Hossein Fariborzi

J. Appl. Phys. 122, 164502 (2017)

https://doi.org/10.1063/1.5008727

Published: October 2017

View article titled, A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

Journal Articles

Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Jan Valenta, Michael Greben, Sebastian Gutsch, Daniel Hiller, Margit Zacharias

J. Appl. Phys. 122, 144303 (2017)

https://doi.org/10.1063/1.4999023

Published: October 2017

View article titled, Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Journal Articles

Effect of Cl₂ plasma treatment and annealing on vanadium based metal contacts to Si-doped Al_0.75Ga_0.25N

Mickael Lapeyrade, Sabine Alamé, Johannes Glaab, Anna Mogilatenko, Ralph-Stephan Unger, Christian Kuhn, Tim Wernicke, Patrick Vogt, Arne Knauer, Ute Zeimer, Sven Einfeldt, Markus Weyers, Michael Kneissl

J. Appl. Phys. 122, 125701 (2017)

https://doi.org/10.1063/1.4993447

Published: September 2017

View article titled, Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Journal Articles

Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework

Hao Shen, Lingbo Xu, Dongsheng Li, Deren Yang

J. Appl. Phys. 122, 113103 (2017)

https://doi.org/10.1063/1.4987035

Published: September 2017

View article titled, Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework

Journal Articles

Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors

S. Lombardo, E. Y. Wu, J. H. Stathis

J. Appl. Phys. 122, 085701 (2017)

https://doi.org/10.1063/1.4985794

Published: August 2017

View article titled, Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors

Journal Articles

Evolution of target condition in reactive HiPIMS as a function of duty cycle: An opportunity for refractive index grading

Rajesh Ganesan, Behnam Akhavan, James G. Partridge, Dougal G. McCulloch, David R. McKenzie, Marcela M. M. Bilek

J. Appl. Phys. 121, 171909 (2017)

https://doi.org/10.1063/1.4977824

Published: March 2017

View article titled, Evolution of target condition in reactive HiPIMS as a function of duty cycle: An opportunity for refractive index grading

Journal Articles

Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

Haining Cao, Pooja Srivastava, Keunsu Choi, Seungchul Kim, Kwang-Ryeol Lee

J. Appl. Phys. 119, 125305 (2016)

https://doi.org/10.1063/1.4944707

Published: March 2016

View article titled, Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

Includes: Supplementary data

Journal Articles

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

J. Schön, T. Niewelt, J. Broisch, W. Warta, M. C. Schubert

J. Appl. Phys. 118, 245702 (2015)

https://doi.org/10.1063/1.4938569

Published: December 2015

View article titled, Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

Journal Articles

Formation of Ge nanoparticles in SiO_xN_y by ion implantation and thermal annealing

S. Mirzaei, F. Kremer, D. J. Sprouster, L. L. Araujo, R. Feng, C. J. Glover, M. C. Ridgway

J. Appl. Phys. 118, 154309 (2015)

https://doi.org/10.1063/1.4933396

Published: October 2015

View article titled, Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing

Journal Articles

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Wen-Cheng Ke, Fang-Wei Lee, Cheng-Yi Yang, Wei-Kuo Chen, Hao-Ping Huang

J. Appl. Phys. 118, 155303 (2015)

https://doi.org/10.1063/1.4933273

Published: October 2015

View article titled, Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Journal Articles

Formation of size-controlled and luminescent Si nanocrystals from SiO_xN_y/Si₃N₄ hetero-superlattices

A. Zelenina, A. Sarikov, S. Gutsch, N. Zakharov, P. Werner, A. Reichert, C. Weiss, M. Zacharias

J. Appl. Phys. 117, 175303 (2015)

https://doi.org/10.1063/1.4919603

Published: May 2015

View article titled, Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices

Journal Articles

A hybrid ferroelectric-flash memory cells

Jae Hyo Park, Chang Woo Byun, Ki Hwan Seok, Hyung Yoon Kim, Hee Jae Chae, Sol Kyu Lee, Se Wan Son, Donghwan Ahn, Seung Ki Joo

J. Appl. Phys. 116, 124512 (2014)

https://doi.org/10.1063/1.4896737

Published: September 2014

View article titled, A hybrid ferroelectric-flash memory cells

Journal Articles

Stress stabilization of a new ferroelectric phase incorporated into SrTaO₂N thin films

Wenliang Zhu, Hideyuki Kamisaka, Daichi Oka, Yasushi Hirose, Andrea Leto, Tetsuya Hasegawa, Giuseppe Pezzotti

J. Appl. Phys. 116, 053505 (2014)

https://doi.org/10.1063/1.4891981

Published: August 2014

View article titled, Stress stabilization of a new ferroelectric phase incorporated into SrTaO2N thin films

NARROW

Topics

Superconducting titanium nitride films grown by directional reactive evaporation

Ultrafast dynamics and short-lived carriers in Cu nitride and oxynitride layers

Optical and structural investigations on titanium oxynitride films for visible-UV photocatalytic applications

Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices

Investigation of the mechanism of enhanced and directed differentiation of neural stem cells by an atmospheric plasma jet: A gene-level study

Enhanced surface passivation of predictable quantum efficient detectors by silicon nitride and silicon oxynitride/silicon nitride stack

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Effect of Cl₂ plasma treatment and annealing on vanadium based metal contacts to Si-doped Al_0.75Ga_0.25N

Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework

Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors

Evolution of target condition in reactive HiPIMS as a function of duty cycle: An opportunity for refractive index grading

Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

Formation of Ge nanoparticles in SiO_xN_y by ion implantation and thermal annealing

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Formation of size-controlled and luminescent Si nanocrystals from SiO_xN_y/Si₃N₄ hetero-superlattices

A hybrid ferroelectric-flash memory cells

Stress stabilization of a new ferroelectric phase incorporated into SrTaO₂N thin films

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