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Journal Articles

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Ze F. Scales, Christian Koller, Liverios Lymperakis, Michael Nelhiebel, Michael Stoeger-Pollach
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045704 (2024)
https://doi.org/10.1063/5.0213275
Published: July 2024
View article titled, The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN
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Journal Articles

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Jakub Pongrácz, Petr Vacek, Roman Gröger
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 195704 (2023)
https://doi.org/10.1063/5.0171937
Published: November 2023
View article titled, Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid
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Journal Articles

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Andrew Norman, Jake Soto, Bruce Odekirk, Robert E. Stahlbush, Nadeemullah A. Mahadik, Brian P. Gorman, Mowafak Al-Jassim
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 075704 (2023)
https://doi.org/10.1063/5.0153103
Published: August 2023
View article titled, Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability
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Includes: Supplementary data
Journal Articles

Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current

Abdelillah El Hdiy
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 214304 (2022)
https://doi.org/10.1063/5.0090630
Published: June 2022
View article titled, Effects of carrier storage in an uncapped Ge–Si core–shell nanocrystal on simulated nano-electron beam induced current
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Journal Articles

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak, Leonid Chernyak, Minghan Xian, Fan Ren, Stephen J. Pearton, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Zinovi Dashevsky
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 085702 (2020)
https://doi.org/10.1063/5.0017742
Published: August 2020
View article titled, Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
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Journal Articles

Understanding and optimizing EBIC pn-junction characterization from modeling insights

Ruinan Zhou, Mingzhe Yu, David Tweddle, Phillip Hamer, Daniel Chen, Brett Hallam, Alison Ciesla, Pietro P. Altermatt, Peter R. Wilshaw, Ruy S. Bonilla
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 024502 (2020)
https://doi.org/10.1063/1.5139894
Published: January 2020
View article titled, Understanding and optimizing EBIC pn-junction characterization from modeling insights
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Includes: Supplementary data
Journal Articles

Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors

Sergey I. Maximenko, Nabil D. Bassim, Edward H. Aifer, Eric M. Jackson, Jill A. Nolde, Chaffra A. Affouda, Chadwick L. Canedy, Igor Vurgaftman, Jerry R. Meyer
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 214503 (2019)
https://doi.org/10.1063/1.5086441
Published: June 2019
View article titled, Investigation of defects influencing performance of type-II InAs/GaInSb superlattice based infrared PIN type photodetectors
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Journal Articles

Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions

A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, Jiancheng Yang, Chaker Fares, F. Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 095702 (2019)
https://doi.org/10.1063/1.5080941
Published: March 2019
View article titled, Deep traps and persistent photocapacitance in β-(Al<sub>0.14</sub> Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunctions
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Journal Articles

Analytical and numerical simulation of electron beam induced current profiles in p-n junctions

James E. Moore, Chaffra A. Affouda, Sergey I. Maximenko, Phillip Jenkins
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 113102 (2018)
https://doi.org/10.1063/1.5049117
Published: September 2018
View article titled, Analytical and numerical simulation of electron beam induced current profiles in p-n junctions
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Journal Articles

Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

Editor’s Pick
E. B. Yakimov, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 185704 (2018)
https://doi.org/10.1063/1.5027559
Published: May 2018
View article titled, Diffusion length of non-equilibrium minority charge carriers in β-Ga<sub>2</sub>O<sub>3</sub> measured by electron beam induced current
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Journal Articles

Cathodoluminescence studies of chevron features in semi-polar ( 11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

C. Brasser, J. Bruckbauer, Y. Gong, L. Jiu, J. Bai, M. Warzecha, P. R. Edwards, T. Wang, R. W. Martin
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 174502 (2018)
https://doi.org/10.1063/1.5021883
Published: May 2018
View article titled, Cathodoluminescence studies of chevron features in semi-polar ( 11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures
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Journal Articles

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Editor’s Pick
T. W. Kim, B. R. Albert, L. C. Kimerling, J. Michel
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 085111 (2018)
https://doi.org/10.1063/1.5018082
Published: February 2018
View article titled, InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
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Journal Articles

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

K. C. Collins, A. M. Armstrong, A. A. Allerman, G. Vizkelethy, S. B. Van Deusen, F. Léonard, A. A. Talin
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 235705 (2017)
https://doi.org/10.1063/1.5006814
Published: December 2017
View article titled, Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
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Journal Articles

Recombination properties of dislocations in GaN

Eugene B. Yakimov, Alexander Y. Polyakov, In-Hwan Lee, Stephen J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161543 (2018)
https://doi.org/10.1063/1.4995580
Published: December 2017
View article titled, Recombination properties of dislocations in GaN
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Journal Articles

Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors

N. Yoon, C. J. Reyner, G. Ariyawansa, J. M. Duran, J. E. Scheihing, J. Mabon, D. Wasserman
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 074503 (2017)
https://doi.org/10.1063/1.4998454
Published: August 2017
View article titled, Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors
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Journal Articles

Compositional dependence of charge carrier transport in kesterite Cu2ZnSnS4 solar cells

Justus Just, Melanie Nichterwitz, Dirk Lützenkirchen-Hecht, Ronald Frahm, Thomas Unold
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 225703 (2016)
https://doi.org/10.1063/1.4971179
Published: December 2016
View article titled, Compositional dependence of charge carrier transport in kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cells
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Journal Articles

Depletion region surface effects in electron beam induced current measurements

Paul M. Haney, Heayoung P. Yoon, Benoit Gaury, Nikolai B. Zhitenev
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 095702 (2016)
https://doi.org/10.1063/1.4962016
Published: September 2016
View article titled, Depletion region surface effects in electron beam induced current measurements
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Journal Articles

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

Matthias Hocker, Pascal Maier, Lisa Jerg, Ingo Tischer, Gregor Neusser, Christine Kranz, Markus Pristovsek, Colin J. Humphreys, Robert A. R. Leute, Dominik Heinz, Oliver Rettig, Ferdinand Scholz, Klaus Thonke
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 085703 (2016)
https://doi.org/10.1063/1.4961417
Published: August 2016
View article titled, Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
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Journal Articles

Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique

A. Darbandi, S. P. Watkins
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 014301 (2016)
https://doi.org/10.1063/1.4955136
Published: July 2016
View article titled, Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique
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Journal Articles

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 205109 (2016)
https://doi.org/10.1063/1.4952734
Published: May 2016
View article titled, Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
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