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Journal Articles

Identification of paramagnetic species in silver-doped barium–germanium–gallium glass exposed to electron irradiation

Fouad Alassani, Yannick Petit, Thierry Cardinal, Nadège Ollier

J. Appl. Phys. 137, 013105 (2025)

https://doi.org/10.1063/5.0239091

Published: January 2025

View article titled, Identification of paramagnetic species in silver-doped barium–germanium–gallium glass exposed to electron irradiation

Journal Articles

Characterization of near-interface traps in thermally oxidized and NO-annealed SiO₂/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Haodong Fu, Qi Li, Dongyuan Zhai, Yuwei Wang, Jiwu Lu

J. Appl. Phys. 136, 245702 (2024)

https://doi.org/10.1063/5.0238784

Published: December 2024

View article titled, Characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Journal Articles

Dual role of Te ions as electron traps and hole traps in ferroelectric Sn₂P₂S₆ crystals

T. D. Gustafson, E. M. Scherrer, N. C. Giles, M. Rumi, A. A. Grabar, L. E. Halliburton

J. Appl. Phys. 136, 224104 (2024)

https://doi.org/10.1063/5.0246359

Published: December 2024

View article titled, Dual role of Te ions as electron traps and hole traps in ferroelectric Sn2P2S6 crystals

Journal Articles

Investigation of the leakage mechanism in solar-blind AlGaN p-i-n photodetector at high reverse bias

Zhaolan Sun, Jing Yang, Degang Zhao, Zongshun Liu, Lihong Duan, Feng Liang, Ping Chen, Bing Liu, Fu Zheng, Xuefeng Liu

J. Appl. Phys. 136, 175701 (2024)

https://doi.org/10.1063/5.0229567

Published: November 2024

View article titled, Investigation of the leakage mechanism in solar-blind AlGaN p-i-n photodetector at high reverse bias

Journal Articles

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly

J. Appl. Phys. 136, 164501 (2024)

https://doi.org/10.1063/5.0228156

Published: October 2024

View article titled, Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Journal Articles

Comprehensive study of interface state via the time-dependent second harmonic generation

Libo Zhang, Li Ye, Weiwei Zhao, Chongji Huang, Tao Li, Tai Min, Jinbo Yang, Mingliang Tian, Xuegang Chen

J. Appl. Phys. 136, 065301 (2024)

https://doi.org/10.1063/5.0188344

Published: August 2024

View article titled, Comprehensive study of interface state via the time-dependent second harmonic generation

Journal Articles

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

C. A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball

J. Appl. Phys. 136, 045705 (2024)

https://doi.org/10.1063/5.0202581

Published: July 2024

View article titled, Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal Articles

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

M. Weger, J. Kuegler, M. Nelhiebel, M. Moser, M. Bockstedte, G. Pobegen

J. Appl. Phys. 136, 034502 (2024)

https://doi.org/10.1063/5.0203724

Published: July 2024

View article titled, Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Journal Articles

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga₂O₃

A. A. Vasilev, A. I. Kochkova, A. Y. Polyakov, A. A. Romanov, N. R. Matros, L. A. Alexanyan, I. V. Shchemerov, S. J. Pearton

J. Appl. Phys. 136, 025701 (2024)

https://doi.org/10.1063/5.0209322

Published: July 2024

View article titled, Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3

Journal Articles

High-temperature dielectric with excellent capacitive performance enabled by rationally designed traps in blends

Zhonghua Zhao, Shuo Zhang, Mingru Li, Yang Feng, Liuqing Yang, Shengtao Li

J. Appl. Phys. 135, 194103 (2024)

https://doi.org/10.1063/5.0208131

Published: May 2024

View article titled, High-temperature dielectric with excellent capacitive performance enabled by rationally designed traps in blends

Journal Articles

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

L. Sun, P. Kruszewski, V. P. Markevich, C. A. Dawe, A. R. Peaker, I. F. Crowe, J. Plesiewicz, P. Prystawko, Sz. Grzanka, E. Grzanka, R. Jakiela, D. Binks, M. P. Halsall

J. Appl. Phys. 135, 175702 (2024)

https://doi.org/10.1063/5.0205998

Published: May 2024

View article titled, The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton

J. Appl. Phys. 135, 165703 (2024)

https://doi.org/10.1063/5.0203526

Published: April 2024

View article titled, Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Journal Articles

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Narendra Rai, Ritam Sarkar, Ashutosh Mahajan, Apurba Laha, Dipankar Saha, Swaroop Ganguly

J. Appl. Phys. 134, 244503 (2023)

https://doi.org/10.1063/5.0176944

Published: December 2023

View article titled, Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Journal Articles

Identification of intrinsic defects and hydrogen passivation in InP using hybrid functional

Jinhong Liu, Yang Song, Xiaodong Xu, Weiqi Li, Jianqun Yang, Xingji Li

J. Appl. Phys. 134, 115702 (2023)

https://doi.org/10.1063/5.0164899

Published: September 2023

View article titled, Identification of intrinsic defects and hydrogen passivation in InP using hybrid functional

Journal Articles

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

J. Appl. Phys. 134, 095704 (2023)

https://doi.org/10.1063/5.0165894

Published: September 2023

View article titled, Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Journal Articles

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Dongfang Chen, Shaoqing Liu, Xu Jiang, Jun Jiang

J. Appl. Phys. 134, 094101 (2023)

https://doi.org/10.1063/5.0168599

Published: September 2023

View article titled, Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Includes: Supplementary data

Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck

J. Appl. Phys. 134, 085703 (2023)

https://doi.org/10.1063/5.0157378

Published: August 2023

View article titled, Effect of Mg doping on carrier recombination in GaN

Journal Articles

Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating

Nir Tessler, Nayeon Kim, Heebum Kang, Jiyong Woo

J. Appl. Phys. 134, 074501 (2023)

https://doi.org/10.1063/5.0154153

Published: August 2023

View article titled, Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating

Journal Articles

Phototransferred thermoluminescence of calcite: Analysis and mechanisms

M. L. Chithambo

J. Appl. Phys. 134, 055109 (2023)

https://doi.org/10.1063/5.0155164

Published: August 2023

View article titled, Phototransferred thermoluminescence of calcite: Analysis and mechanisms

Includes: Supplementary data

Journal Articles

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

Isshin Sumiyoshi, Yoshitaro Nose

J. Appl. Phys. 133, 235702 (2023)

https://doi.org/10.1063/5.0151739

Published: June 2023

View article titled, Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Includes: Supplementary data

NARROW

Topics

Identification of paramagnetic species in silver-doped barium–germanium–gallium glass exposed to electron irradiation

Characterization of near-interface traps in thermally oxidized and NO-annealed SiO₂/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Dual role of Te ions as electron traps and hole traps in ferroelectric Sn₂P₂S₆ crystals

Investigation of the leakage mechanism in solar-blind AlGaN p-i-n photodetector at high reverse bias

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Comprehensive study of interface state via the time-dependent second harmonic generation

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

Photon-assisted electron depopulation of 4H-SiC/SiO₂ interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga₂O₃

High-temperature dielectric with excellent capacitive performance enabled by rationally designed traps in blends

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Identification of intrinsic defects and hydrogen passivation in InP using hybrid functional

Interface and oxide trap states of SiO₂/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

Effect of Mg doping on carrier recombination in GaN

Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating

Phototransferred thermoluminescence of calcite: Analysis and mechanisms

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

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