1-20 of 708
Ion implantation
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

O. Steuer, M. Michailow, R. Hübner, K. Pyszniak, M. Turek, U. Kentsch, F. Ganss, M. M. Khan, L. Rebohle, S. Zhou, J. Knoch, M. Helm, G. Cuniberti, Y. M. Georgiev, S. Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 065701 (2024)
https://doi.org/10.1063/5.0220639
Published: August 2024
View article titled, Si<sub>1−<em>x</em>−<em>y</em></sub>Ge<em><sub>y</sub></em>Sn<em><sub>x</sub></em> alloy formation by Sn ion implantation and flash lamp annealing
Open the PDF for Si<sub>1−<em>x</em>−<em>y</em></sub>Ge<em><sub>y</sub></em>Sn<em><sub>x</sub></em> alloy formation by Sn ion implantation and flash lamp annealing in another window
Journal Articles

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 055702 (2024)
https://doi.org/10.1063/5.0216601
Published: August 2024
View article titled, Effect of sequential N ion implantation in the formation of a shallow Mg-implanted <em>p</em>-type GaN layer
Open the PDF for Effect of sequential N ion implantation in the formation of a shallow Mg-implanted <em>p</em>-type GaN layer in another window
Journal Articles

Modulation of post-fracture roughness with induced shear stress in the smart cut process

Lucas Colonel, Q. Lomonaco, K. Abadie, L. G. Michaud, C. Morales, S. Moreau, F. Mazen, F. Fournel, D. Landru, F. Rieutord
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045106 (2024)
https://doi.org/10.1063/5.0223114
Published: July 2024
View article titled, Modulation of post-fracture roughness with induced shear stress in the smart cut process
Open the PDF for Modulation of post-fracture roughness with induced shear stress in the smart cut process in another window
Journal Articles

The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes

G. Alfieri, S. Bolat, R. Nipoti
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 235302 (2024)
https://doi.org/10.1063/5.0205559
Published: June 2024
View article titled, The effects of different anode manufacturing methods on deep levels in 4H-SiC p<sup>+</sup>n diodes
Open the PDF for The effects of different anode manufacturing methods on deep levels in 4H-SiC p<sup>+</sup>n diodes in another window
Journal Articles

Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system

Alena Nikolskaya, Dmitry Korolev, Alexey Mikhaylov, Dmitrii Pavlov, Artem Sushkov, Evgenia Okulich, Anastasia Chizhova, Anton Konakov, Pavel Yunin, Andrey Okhapkin, Stanislav Kraev, Artem Yablonskiy, Dmitry Yurasov, Vsevolod Zakharov, Boris Andreev, David Tetelbaum
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 215703 (2024)
https://doi.org/10.1063/5.0205956
Published: June 2024
View article titled, Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO<sub>2</sub>/Si system
Open the PDF for Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO<sub>2</sub>/Si system in another window
Journal Articles

High electron mobility in heavily sulfur-doped 4H-SiC

Featured
Mitsuaki Kaneko, Taiga Matsuoka, Tsunenobu Kimoto
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 205702 (2024)
https://doi.org/10.1063/5.0207833
Published: May 2024
View article titled, High electron mobility in heavily sulfur-doped 4H-SiC
Open the PDF for High electron mobility in heavily sulfur-doped 4H-SiC in another window
Journal Articles

Quantitative characterization of occupational sites of implanted P atoms in diamond

Jyoji Nakata, Yuhei Seki, Yasushi Hoshino
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195705 (2024)
https://doi.org/10.1063/5.0204258
Published: May 2024
View article titled, Quantitative characterization of occupational sites of implanted P atoms in diamond
Open the PDF for Quantitative characterization of occupational sites of implanted P atoms in diamond in another window
Journal Articles

Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing

Chenyang Huangfu, Yufei Zhang, Jinchen Hao, Gangyuan Jia, Haitao Wu, Xujie Wang, Wei Wang, Kaiyue Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 195104 (2024)
https://doi.org/10.1063/5.0189911
Published: May 2024
View article titled, Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing
Open the PDF for Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing in another window
Journal Articles

Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC

Featured
Kotaro Ishiji, Makoto Arita, Mariko Adachi, Ryuichi Sugie, Yukihiro Morita, Tsutomu Araki
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 185703 (2024)
https://doi.org/10.1063/5.0205320
Published: May 2024
View article titled, Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC
Open the PDF for Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC in another window
Journal Articles

Basic principles of modeling reactive sputtering

Viktor I. Shapovalov
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165306 (2024)
https://doi.org/10.1063/5.0204220
Published: April 2024
View article titled, Basic principles of modeling reactive sputtering
Open the PDF for Basic principles of modeling reactive sputtering in another window
Journal Articles

Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques

A. Kumar, M. Baral, A. Kandasami, S. K. Mandal, R. Urkude, S. Bhunia, V. R. Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 155302 (2024)
https://doi.org/10.1063/5.0202962
Published: April 2024
View article titled, Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques
Open the PDF for Effect of oxygen-ion implantation on the local electronic structures of strontium-titanate single crystals: An investigation using synchrotron-based x-ray diffraction and x-ray photoemission techniques in another window
Journal Articles

Tailoring the electrical and magneto-electric transport properties of ZnO films via Ti ion implantation

Santanu Pal, Amaresh Das, Durga Basak
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 145105 (2024)
https://doi.org/10.1063/5.0190066
Published: April 2024
View article titled, Tailoring the electrical and magneto-electric transport properties of ZnO films via Ti ion implantation
Open the PDF for Tailoring the electrical and magneto-electric transport properties of ZnO films via Ti ion implantation in another window
Journal Articles

Reassessing iron–gallium recombination activity in silicon

Tien T. Le, Zhuangyi Zhou, Alan Chen, Zhongshu Yang, Fiacre Rougieux, Daniel Macdonald, AnYao Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 133107 (2024)
https://doi.org/10.1063/5.0198737
Published: April 2024
View article titled, Reassessing iron–gallium recombination activity in silicon
Open the PDF for Reassessing iron–gallium recombination activity in silicon in another window
Journal Articles

Room temperature electrical characteristics of gold-hyperdoped silicon

Shao Qi Lim, Jeffrey M. Warrender, Christian Notthoff, Thomas Ratcliff, Jim S. Williams, Brett C. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 095704 (2024)
https://doi.org/10.1063/5.0196985
Published: March 2024
View article titled, Room temperature electrical characteristics of gold-hyperdoped silicon
Open the PDF for Room temperature electrical characteristics of gold-hyperdoped silicon in another window
Journal Articles

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

K. Huynh, Y. Wang, M. E. Liao, J. Tweedie, P. Reddy, M. H. Breckenridge, R. Collazo, Z. Sitar, K. Sierakowski, M. Bockowski, X. Huang, M. Wojcik, M. S. Goorsky
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 025104 (2024)
https://doi.org/10.1063/5.0179623
Published: January 2024
View article titled, Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
Open the PDF for Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation in another window
Journal Articles

Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted β-emitter 8Li

Ryan M. L. McFadden, Md Asaduzzaman, Terry J. Buck, David L. Cortie, Martin H. Dehn, Sarah R. Dunsiger, Robert F. Kiefl, Robert E. Laxdal, C. D. Philip Levy, W. Andrew MacFarlane, Gerald D. Morris, Matthew R. Pearson, Edward Thoeng, Tobias Junginger
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 163902 (2023)
https://doi.org/10.1063/5.0175532
Published: October 2023
View article titled, Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted <em>β</em>-emitter <sup>8</sup>Li
Open the PDF for Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted <em>β</em>-emitter <sup>8</sup>Li in another window
Journal Articles

Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics

Juanmei Duan, Maciej O. Liedke, Wojciech Dawidowski, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095102 (2023)
https://doi.org/10.1063/5.0151582
Published: September 2023
View article titled, Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
Open the PDF for Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics in another window
Journal Articles

Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions

M. Shimizu, T. Makino, H. Kato, M. Fujiwara, M. Ogura, N. Mizuochi, M. Hatano
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 214401 (2023)
https://doi.org/10.1063/5.0148921
Published: June 2023
View article titled, Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions
Open the PDF for Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions in another window
Includes: Supplementary data
Journal Articles

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185702 (2023)
https://doi.org/10.1063/5.0142766
Published: May 2023
View article titled, Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
Open the PDF for Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN in another window
Journal Articles

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

R. Auguste, M. O. Liedke, M. Butterling, B. P. Uberuaga, F. A. Selim, A. Wagner, P. Hosemann
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185901 (2023)
https://doi.org/10.1063/5.0144308
Published: May 2023
View article titled, <em>In situ</em> measurements of non-equilibrium positron state defects during He irradiation in Si
Open the PDF for <em>In situ</em> measurements of non-equilibrium positron state defects during He irradiation in Si in another window