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Journal Articles

Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics

Juanmei Duan, Maciej O. Liedke, Wojciech Dawidowski, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095102 (2023)
https://doi.org/10.1063/5.0151582
Published: September 2023
View article titled, Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
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Journal Articles

Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions

M. Shimizu, T. Makino, H. Kato, M. Fujiwara, M. Ogura, N. Mizuochi, M. Hatano
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 214401 (2023)
https://doi.org/10.1063/5.0148921
Published: June 2023
View article titled, Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions
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Includes: Supplementary data
Journal Articles

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185702 (2023)
https://doi.org/10.1063/5.0142766
Published: May 2023
View article titled, Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
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Journal Articles

In situ measurements of non-equilibrium positron state defects during He irradiation in Si

R. Auguste, M. O. Liedke, M. Butterling, B. P. Uberuaga, F. A. Selim, A. Wagner, P. Hosemann
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185901 (2023)
https://doi.org/10.1063/5.0144308
Published: May 2023
View article titled, <em>In situ</em> measurements of non-equilibrium positron state defects during He irradiation in Si
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Journal Articles

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Tomohisa Mizuno, Koki Murakawa, Toshiyuki Sameshima
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 145703 (2023)
https://doi.org/10.1063/5.0143637
Published: April 2023
View article titled, Near infrared photoluminescence of Si<sub>1<em>–x</em></sub>Ge<em><sub>x</sub></em> quantum dots fabricated by double hot Ge<sup>+</sup>/Si<sup>+</sup> implantation into SiO<sub>2</sub> layer
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Journal Articles

Weak-localization effect in Fano asymmetry of C implanted rutile TiO2 nanostructure

Subhashree Sahoo, Pratap K. Sahoo
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 144301 (2023)
https://doi.org/10.1063/5.0139163
Published: April 2023
View article titled, Weak-localization effect in Fano asymmetry of C implanted rutile TiO<sub>2</sub> nanostructure
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Journal Articles