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Journal Articles

Type-n electrical activation of ion-implanted P atoms and unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, using C2+, Ne2+, Si2+ MeV-ion irradiations

Jyoji Nakata
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 135703 (2025)
https://doi.org/10.1063/5.0252789
Published: April 2025
View articletitled, Type-n electrical activation of ion-implanted P atoms and unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, using C2+, Ne2+, Si2+ MeV-ion irradiations
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Journal Articles

Magneto-optical properties of cobalt and Co3O4 thin films: Influence of microstructural properties

Gerges El Haber, François Goutaland, Dominique Luneau, Damien Jamon, Jean Pierre Chatelon, Jean Yves Michalon, Nadège Ollier, Christophe Donnet, Yannick Bleu, Yaya Lefkir, Stéphanie Reynaud, François Royer
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 123907 (2025)
https://doi.org/10.1063/5.0245867
Published: March 2025
View articletitled, Magneto-optical properties of cobalt and Co3O4 thin films: Influence of microstructural properties
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Journal Articles

Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers

Zhengfang Fan, Yumeng Liu, Yizhuo Wang, Hao Wei, He Li, Shuwen Guo, Li He, Xiaochun Lai, Yaping Dan
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 125102 (2025)
https://doi.org/10.1063/5.0243124
Published: March 2025
View articletitled, Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers
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Journal Articles

Insights into nitrogen-incorporated nano silicon oxide on the passivation performance of p-type tunneling oxide passivating contact structures

Ruoyi Wang, Haiyang Xing, Zetao Ding, Zunke Liu, Xian Zhang, Hongkai Zhou, Shengjie Guan, Hongyu Zhang, Mingdun Liao, Wei Liu, Zhenhai Yang, Yuheng Zeng, Jichun Ye
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 095001 (2025)
https://doi.org/10.1063/5.0253265
Published: March 2025
View articletitled, Insights into nitrogen-incorporated nano silicon oxide on the passivation performance of p-type tunneling oxide passivating contact structures
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Journal Articles

Achieving robust ferroelectric polarization in uncapped Hf0.5Zr0.5O2 thin films by incorporating Al dopant

Xin Liu, Weidong Zhao, Jiawei Wang, Lulu Yao, Man Ding, Yonghong Cheng
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 084103 (2025)
https://doi.org/10.1063/5.0246276
Published: February 2025
View articletitled, Achieving robust ferroelectric polarization in uncapped Hf0.5Zr0.5O2 thin films by incorporating Al dopant
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Journal Articles

Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)

Featured
Shuhang Lyu, Thomas Beechem, Tiwei Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 085101 (2025)
https://doi.org/10.1063/5.0252921
Published: February 2025
View articletitled, Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
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Journal Articles

Self-diffusion and interface diffusion in crystalline and amorphous Ni/Ti multilayer: A molecular dynamics study

A. Biswas, D. Bhattacharyya
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 085301 (2025)
https://doi.org/10.1063/5.0245801
Published: February 2025
View articletitled, Self-diffusion and interface diffusion in crystalline and amorphous Ni/Ti multilayer: A molecular dynamics study
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Journal Articles

Structural, chemical, and electronic control in Co–SiNx granular metals for high-pass filter applications

Featured
Simeon J. Gilbert, Michael P. McGarry, Melissa L. Meyerson, Paul G. Kotula, Luke Yates, James A. Ohlhausen, Peter A. Sharma, Anthony Trofe, Michael P. Siegal, Laura B. Biedermann
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 065101 (2025)
https://doi.org/10.1063/5.0238917
Published: February 2025
View articletitled, Structural, chemical, and electronic control in Co–SiNx granular metals for high-pass filter applications
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Journal Articles

Electron scattering at interfaces in Ru(0001)/Co(0001) multilayers

Poyen Shen, Christian Lavoie, Daniel Gall
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 025303 (2025)
https://doi.org/10.1063/5.0241912
Published: January 2025
View articletitled, Electron scattering at interfaces in Ru(0001)/Co(0001) multilayers
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Journal Articles

Creation of hyperoxia superconducting phase in La2CuO4 by applying shear strain under high-pressure compression

Masaki Mito, Wasuke Abe, Katsumi Yamamoto, Takayuki Tajiri, Zenji Horita
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 015904 (2025)
https://doi.org/10.1063/5.0246733
Published: January 2025
View articletitled, Creation of hyperoxia superconducting phase in La2CuO4 by applying shear strain under high-pressure compression
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Journal Articles

Study of the recrystallization behaviors induced by annealing and irradiation on amorphous SiC

Editor’s Pick
Zijun Zhang, Shengming Jiang, Xiaotian Hu, Jian Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 015901 (2025)
https://doi.org/10.1063/5.0232414
Published: January 2025
View articletitled, Study of the recrystallization behaviors induced by annealing and irradiation on amorphous SiC
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Journal Articles

Type-n electrical activations of unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, after 4-MeV Si2+ irradiations

Jyoji Nakata
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245704 (2024)
https://doi.org/10.1063/5.0232709
Published: December 2024
View articletitled, Type-n electrical activations of unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, after 4-MeV Si2+ irradiations
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Journal Articles

Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging

Stefan Wolter, Vladislav Agluschewitsch, Silke Wolter, Frederik Lüßmann, Christoph Margenfeld, Georg Schöttler, Jana Hartmann, Andreas Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245703 (2024)
https://doi.org/10.1063/5.0243841
Published: December 2024
View articletitled, Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging
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Journal Articles

Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation

Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti, A. F. M. Anhar Uddin Bhuiyan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 225701 (2024)
https://doi.org/10.1063/5.0233995
Published: December 2024
View articletitled, Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation
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Journal Articles

Combining SSVD and subsequent heat treatment processes to fabricate high-quality CsPbBr3 perovskite films

Kuan-Chi Yeh, Chia-Hua Chan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 135303 (2024)
https://doi.org/10.1063/5.0220976
Published: October 2024
View articletitled, Combining SSVD and subsequent heat treatment processes to fabricate high-quality CsPbBr3 perovskite films
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Journal Articles

Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films

Yichen Wen, Maokun Wu, Boyao Cui, Xuepei Wang, Yishan Wu, Yu-Chun Li, Sheng Ye, Pengpeng Ren, Hong-Liang Lu, Runsheng Wang, Zhigang Ji, Ru Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 124105 (2024)
https://doi.org/10.1063/5.0226390
Published: September 2024
View articletitled, Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films
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Journal Articles

Sulfur vacancy synergistically coupling grain cluster for boosting MoS2 piezoresistive properties

Xing Pang, Qi Zhang, Xiaoya Liang, Weilin Qin, Hanyang Xu, Yulong Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 125106 (2024)
https://doi.org/10.1063/5.0214524
Published: September 2024
View articletitled, Sulfur vacancy synergistically coupling grain cluster for boosting MoS2 piezoresistive properties
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Journal Articles

Fermi level limitation in Na1/2Bi1/2TiO3–BaTiO3 piezoceramics by electrochemical reduction of Bi

Editor’s Pick
Pengcheng Hu, Binxiang Huang, Daniel Bremecker, Jurij Koruza, Karsten Albe, Andreas Klein
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 114101 (2024)
https://doi.org/10.1063/5.0227698
Published: September 2024
View articletitled, Fermi level limitation in Na1/2Bi1/2TiO3–BaTiO3 piezoceramics by electrochemical reduction of Bi
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Journal Articles

Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems

Moses O. Nnaji, David A. Tavakoli, Dale A. Hitchcock, Eric M. Vogel
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 115302 (2024)
https://doi.org/10.1063/5.0230405
Published: September 2024
View articletitled, Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems
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Journal Articles

Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation

Vadim Emtsev, Nikolay Abrosimov, Vitalii Kozlovski, Stanislav Lastovskii, Gagik Oganesyan, Dmitrii Poloskin
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 105108 (2024)
https://doi.org/10.1063/5.0226406
Published: September 2024
View articletitled, Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation
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