Page 1 | Search Results | Journal of Applied Physics

1-20 of 821

Sort by

Sort Order Select

Journal Articles

Novel low-macroscopic-field emission cathodes for electron probe spectroscopy systems

R. Smerdov, A. Mustafaev

J. Appl. Phys. 134, 114903 (2023)

https://doi.org/10.1063/5.0169129

Published: September 2023

View article titled, Novel low-macroscopic-field emission cathodes for electron probe spectroscopy systems

Journal Articles

Development of a large-bore plasma window with an indirectly heated hollow cathode

K. Yamasaki, M. Sumino, Y. Sunada, O. Yanagi, K. Okuda, J. Kono, A. Saito, D. Mori, K. Tomita, Y. Pan, N. Tamura, C. Suzuki, H. Okuno, F. Guo, S. Namba

J. Appl. Phys. 134, 093302 (2023)

https://doi.org/10.1063/5.0166798

Published: September 2023

View article titled, Development of a large-bore plasma window with an indirectly heated hollow cathode

Journal Articles

Chemical phases in the solution-grown Zn(O,S) buffer of post-annealed Cu(In,Ga)Se₂ solar cells investigated by transmission electron microscopy and electroreflectance

Xiaowei Jin, Reinhard Schneider, Radian Popescu, Jasmin Seeger, Jonas Grutke, Benedikt Zerulla, Michael Hetterich, Dimitrios Hariskos, Wolfram Witte, Michael Powalla, Dagmar Gerthsen

J. Appl. Phys. 133, 165303 (2023)

https://doi.org/10.1063/5.0139264

Published: April 2023

View article titled, Chemical phases in the solution-grown Zn(O,S) buffer of post-annealed Cu(In,Ga)Se2 solar cells investigated by transmission electron microscopy and electroreflectance

Journal Articles

Near infrared photoluminescence of Si_1–xGe_x quantum dots fabricated by double hot Ge⁺/Si⁺ implantation into SiO₂ layer

Tomohisa Mizuno, Koki Murakawa, Toshiyuki Sameshima

J. Appl. Phys. 133, 145703 (2023)

https://doi.org/10.1063/5.0143637

Published: April 2023

View article titled, Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Journal Articles

Correlative microscopy and monitoring of segregation processes in optoelectronic semiconductor materials and devices

Daniel Abou-Ras, Ulrike Bloeck, Sebastián Caicedo-Dávila, Alberto Eljarrat, Hannah Funk, Adnan Hammud, Sinju Thomas, Dan R. Wargulski, Thomas Lunkenbein, Christoph T. Koch

J. Appl. Phys. 133, 121101 (2023)

https://doi.org/10.1063/5.0138952

Published: March 2023

View article titled, Correlative microscopy and monitoring of segregation processes in optoelectronic semiconductor materials and devices

Journal Articles

Cryogenic etching of silicon compounds using a CHF₃ based plasma

R. Dussart, R. Ettouri, J. Nos, G. Antoun, T. Tillocher, P. Lefaucheux

J. Appl. Phys. 133, 113306 (2023)

https://doi.org/10.1063/5.0142056

Published: March 2023

View article titled, Cryogenic etching of silicon compounds using a CHF3 based plasma

Journal Articles

A new strategy for simultaneous photoluminescence and thermal energy storage/release: Microencapsulated phase change materials via nano-Y₂O₃ modified PW@CaCO₃

Xinyi Liu, Zhixiong Guo, Jifen Wang, Huaqing Xie

J. Appl. Phys. 133, 044902 (2023)

https://doi.org/10.1063/5.0127543

Published: January 2023

View article titled, A new strategy for simultaneous photoluminescence and thermal energy storage/release: Microencapsulated phase change materials via nano-Y2O3 modified PW@CaCO3

Journal Articles

Structure of V-defects in long wavelength GaN-based light emitting diodes

Feng Wu, Jacob Ewing, Cheyenne Lynsky, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

J. Appl. Phys. 133, 035703 (2023)

https://doi.org/10.1063/5.0135278

Published: January 2023

View article titled, Structure of V-defects in long wavelength GaN-based light emitting diodes

Journal Articles

Nb–Nb direct bonding at room temperature for superconducting interconnects

Masahisa Fujino, Yuuki Araga, Hiroshi Nakagawa, Yuta Takahashi, Kenji Nanba, Ayami Yamaguchi, Akira Miyata, Takanori Nishi, Katsuya Kikuchi

J. Appl. Phys. 133, 015301 (2023)

https://doi.org/10.1063/5.0131227

Published: January 2023

View article titled, Nb–Nb direct bonding at room temperature for superconducting interconnects

Journal Articles

Mechanical stability of (Li,Na,K)NbO₃-based multilayered piezoceramics with Ag/Pd inner electrodes

Hiroshi Nishiyama, Ryo Ito, Tomoya Aizawa, Takayuki Goto, Hiroyuki Shimizu

J. Appl. Phys. 132, 244102 (2022)

https://doi.org/10.1063/5.0128389

Published: December 2022

View article titled, Mechanical stability of (Li,Na,K)NbO3-based multilayered piezoceramics with Ag/Pd inner electrodes

Journal Articles

Copper tungsten oxide (Cu_xWO_y) thin films for optical and photoelectrochemical applications deposited by reactive high power impulse magnetron co-sputtering

A. Hrubantova, R. Hippler, H. Wulff, M. Cada, O. Gedeon, P. Jiricek, J. Houdkova, J. Olejnicek, N. Nepomniashchaia, C. A. Helm, Z. Hubicka

J. Appl. Phys. 132, 215301 (2022)

https://doi.org/10.1063/5.0123075

Published: December 2022

View article titled, Copper tungsten oxide (CuxWOy) thin films for optical and photoelectrochemical applications deposited by reactive high power impulse magnetron co-sputtering

Journal Articles

Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses

Florian Castioni, Loïc Henry, Lara Casiez, Nicolas Bernier, Vincent Reboud, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Jérôme Richy, Audrey Jannaud, Vincent Delaye, Eric Robin, Jean-Michel Hartmann, Pascale Bayle-Guillemaud

J. Appl. Phys. 132, 195306 (2022)

https://doi.org/10.1063/5.0117300

Published: November 2022

View article titled, Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses

Includes: Supplementary data

Journal Articles

Geometric defects induced by strain relaxation in thin film oxide superlattices

Matthew Webb, Tao Ma, Allen H. Hunter, Sean McSherry, Jonathan Kaufman, Zihao Deng, William B. Carter, Emmanouil Kioupakis, Keivan Esfarjani, Andrej Lenert, John T. Heron

J. Appl. Phys. 132, 185307 (2022)

https://doi.org/10.1063/5.0120176

Published: November 2022

View article titled, Geometric defects induced by strain relaxation in thin film oxide superlattices

Includes: Supplementary data

Journal Articles

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Ling Yang, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou, Minhan Mi, Mei Wu, Kai Cheng, Qing Zhu, Yang Lu, Ling Lv, Xiaohua Ma, Yue Hao

J. Appl. Phys. 132, 165703 (2022)

https://doi.org/10.1063/5.0106827

Published: October 2022

View article titled, Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Journal Articles

Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range

Shiro Satoh, Koichi Ohtaka, Takehito Shimatsu, Shuji Tanaka

J. Appl. Phys. 132, 025103 (2022)

https://doi.org/10.1063/5.0087505

Published: July 2022

View article titled, Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range

Journal Articles

Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

L. Casiez, N. Bernier, J. Chrétien, J. Richy, D. Rouchon, M. Bertrand, F. Mazen, M. Frauenrath, A. Chelnokov, J. M. Hartmann, V. Calvo, N. Pauc, V. Reboud, P. Acosta Alba

J. Appl. Phys. 131, 153103 (2022)

https://doi.org/10.1063/5.0085107

Published: April 2022

View article titled, Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

Journal Articles

Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on Al_xGa_1−xN nucleation layers

Abhiram Gundimeda, Martin Frentrup, Simon M. Fairclough, Menno J. Kappers, David J. Wallis, Rachel A. Oliver

J. Appl. Phys. 131, 115703 (2022)

https://doi.org/10.1063/5.0077186

Published: March 2022

View article titled, Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers

Includes: Supplementary data

Journal Articles

Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Ece N. Aybeke, Alexandra-Madalina Siladie, Rémy Vermeersch, Eric Robin, Oleksandr Synhaivskyi, Bruno Gayral, Julien Pernot, Georges Brémond, Bruno Daudin

J. Appl. Phys. 131, 075701 (2022)

https://doi.org/10.1063/5.0080713

Published: February 2022

View article titled, Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Includes: Supplementary data

Journal Articles

Stabilization of layered perovskite structures via strontium substitution in Ca₃Ti₂O₇ revealed via elemental mapping

Kosuke Kurushima, Hiroshi Nakajima, Shinya Mine, Hirofumi Tsukasaki, Masaya Matsuoka, Bin Gao, Sang-Wook Cheong, Shigeo Mori

J. Appl. Phys. 131, 024102 (2022)

https://doi.org/10.1063/5.0076949

Published: January 2022

View article titled, Stabilization of layered perovskite structures via strontium substitution in Ca3Ti2O7 revealed via elemental mapping

Includes: Supplementary data

Journal Articles

A DFT+U look into experimentally synthesized monoclinic scheelite BiVO₄

Jannatul Fardush Tanha, S. F. U. Farhad, U. Honey, N. I. Tanvir, Tarique Hasan, Sadiq Shahriyar Nishat, Alamgir Kabir, Shahran Ahmed, Mahmuda Hakim, M. N. I. Khan, Mohammad Moniruzzaman, Imtiaz Ahmed

J. Appl. Phys. 130, 235107 (2021)

https://doi.org/10.1063/5.0074148

Published: December 2021

View article titled, A DFT+U look into experimentally synthesized monoclinic scheelite BiVO4

NARROW

Topics

Novel low-macroscopic-field emission cathodes for electron probe spectroscopy systems

Development of a large-bore plasma window with an indirectly heated hollow cathode

Chemical phases in the solution-grown Zn(O,S) buffer of post-annealed Cu(In,Ga)Se₂ solar cells investigated by transmission electron microscopy and electroreflectance

Near infrared photoluminescence of Si_1–xGe_x quantum dots fabricated by double hot Ge⁺/Si⁺ implantation into SiO₂ layer

Correlative microscopy and monitoring of segregation processes in optoelectronic semiconductor materials and devices

Cryogenic etching of silicon compounds using a CHF₃ based plasma

A new strategy for simultaneous photoluminescence and thermal energy storage/release: Microencapsulated phase change materials via nano-Y₂O₃ modified PW@CaCO₃

Structure of V-defects in long wavelength GaN-based light emitting diodes

Nb–Nb direct bonding at room temperature for superconducting interconnects

Mechanical stability of (Li,Na,K)NbO₃-based multilayered piezoceramics with Ag/Pd inner electrodes

Copper tungsten oxide (Cu_xWO_y) thin films for optical and photoelectrochemical applications deposited by reactive high power impulse magnetron co-sputtering

Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses

Geometric defects induced by strain relaxation in thin film oxide superlattices

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range

Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on Al_xGa_1−xN nucleation layers

Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Stabilization of layered perovskite structures via strontium substitution in Ca₃Ti₂O₇ revealed via elemental mapping

A DFT+U look into experimentally synthesized monoclinic scheelite BiVO₄

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only