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Journal Articles

Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect

Yunfeng Wu, Houwei Pang, Yuan Wang, Sichen Lin, Lei Wang, Deren Yang, Dongsheng Li
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 133102 (2024)
https://doi.org/10.1063/5.0223340
Published: October 2024
View article titled, Low driving voltage and high reliability 1.54 <em>μ</em>m electroluminescence from SnO<sub>2</sub>:Er/<em>p</em>-Si heterostructured devices via energy transfer effect
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Journal Articles

Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

Pengyan Wen, Huixin Xiu, Shuming Zhang, Jianping Liu, Yimeng Chen, Hui Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043103 (2024)
https://doi.org/10.1063/5.0215654
Published: July 2024
View article titled, Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography
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Journal Articles

Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

Wenxin Lin, Jiangxia Huang, Shuxin Li, Paul W. M. Blom, Haonan Feng, Jiahao Li, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Quan Niu, Yuguang Ma
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 045701 (2024)
https://doi.org/10.1063/5.0180211
Published: January 2024
View article titled, Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements
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Journal Articles

Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED

Xi Bao, Yunxia Guan, Wanjiao Li, Jiayi Song, Lijia Chen, Cheng Wang, Shuang Xu, Keao Peng, Lianbin Niu
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 193902 (2023)
https://doi.org/10.1063/5.0173874
Published: November 2023
View article titled, Effects of unipolar and bipolar charges on the evolution of triplet excitons in π-conjugated PLED
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Includes: Supplementary data
Journal Articles

Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes

Yujie Huang, Jing Yang, Zongshun Liu, Feng Liang, Degang Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 095701 (2023)
https://doi.org/10.1063/5.0160833
Published: September 2023
View article titled, Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes
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Journal Articles

Photoluminescence imaging of field-installed photovoltaic modules in diffuse irradiance

M. Vuković, M. Hillestad, M. Jakovljević, A. S. Flø, E. Olsen, I. Burud
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 074903 (2023)
https://doi.org/10.1063/5.0160897
Published: August 2023
View article titled, Photoluminescence imaging of field-installed photovoltaic modules in diffuse irradiance
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Journal Articles

Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps

Editor’s Pick
M. Weger, M. W. Feil, M. Van Orden, J. Cottom, M. Bockstedte, G. Pobegen
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 034503 (2023)
https://doi.org/10.1063/5.0152337
Published: July 2023
View article titled, Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps
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Journal Articles

Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies

Sweta Rani, Jitendra Kumar
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 104302 (2023)
https://doi.org/10.1063/5.0139599
Published: March 2023
View article titled, Modeling charge transport mechanism in inorganic quantum dot light-emitting devices through transport layer modification strategies
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Journal Articles

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

C. Berger, S. Neugebauer, F. Hörich, A. Dadgar, A. Strittmatter
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 233103 (2022)
https://doi.org/10.1063/5.0130757
Published: December 2022
View article titled, Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
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Journal Articles

Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells

Tetsuya Nakamura, Mitsuru Imaizumi, Shin-ichiro Sato, Takeshi Ohshima, Hidefumi Akiyama, Yoshitaka Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 115701 (2022)
https://doi.org/10.1063/5.0099106
Published: September 2022
View article titled, Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells
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Journal Articles

Efficient defect control of zinc vacancy in undoped ZnO microtubes for optoelectronic applications

Yongman Pan, Yinzhou Yan, Qiang Wang, Lixue Yang, Xuegang Zhang, Long Tang, Cheng Xing, Fei Chen, Yijian Jiang
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 105105 (2022)
https://doi.org/10.1063/5.0077884
Published: March 2022
View article titled, Efficient defect control of zinc vacancy in undoped ZnO microtubes for optoelectronic applications
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Journal Articles

Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers

Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 045701 (2022)
https://doi.org/10.1063/5.0077223
Published: January 2022
View article titled, Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers
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Journal Articles

Interpretation of slow electroluminescence and open circuit voltage transient response in Cs-based perovskite solar cells

Editor’s Pick
M. Córdoba, M. Unmüssig, J. Herterich, U. Würfel, K. Taretto
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 223101 (2021)
https://doi.org/10.1063/5.0065983
Published: December 2021
View article titled, Interpretation of slow electroluminescence and open circuit voltage transient response in Cs-based perovskite solar cells
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Includes: Supplementary data
Journal Articles

Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes

Hongliang Chang, Jingyuan Shan, Dongdong Liang, Yaqi Gao, Lulu Wang, Junxi Wang, Jingyu Sun, Tongbo Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 193103 (2021)
https://doi.org/10.1063/5.0065328
Published: November 2021
View article titled, Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes
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Includes: Supplementary data
Journal Articles

Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer

Editor’s Pick
Tetsuya Nakamura, Warakorn Yanwachirakul, Mitsuru Imaizumi, Masakazu Sugiyama, Hidefumi Akiyama, Yoshitaka Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 153102 (2021)
https://doi.org/10.1063/5.0060158
Published: October 2021
View article titled, Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer
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Journal Articles

Theoretical investigation of charge transfer between the NV− center in diamond and substitutional N and P

Rodrick Kuate Defo, Xingyu Zhang, Steven L. Richardson, Efthimios Kaxiras
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 155102 (2021)
https://doi.org/10.1063/5.0061396
Published: October 2021
View article titled, Theoretical investigation of charge transfer between the N<em>V</em><sup>−</sup> center in diamond and substitutional N and P
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Journal Articles

On-chip 3D confocal optical study of an InGaN/GaN microrod LED in the low excitation regime

Editor’s Pick
Johanna Meier, Julius Kahl, Adrian Avramescu, Martin Strassburg, Gerd Bacher
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 024505 (2021)
https://doi.org/10.1063/5.0049886
Published: July 2021
View article titled, On-chip 3D confocal optical study of an InGaN/GaN microrod LED in the low excitation regime
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Includes: Supplementary data
Journal Articles

Preparation, structure, and luminescent properties of Dy3+-doped borate Ca3La3(BO3)5: Dy3+ for potential application in UV-LEDs

Wubin Dai, Yeming Fan, Man Xu, Fan Shen
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 093101 (2021)
https://doi.org/10.1063/5.0040364
Published: March 2021
View article titled, Preparation, structure, and luminescent properties of Dy<sup>3+</sup>-doped borate Ca<sub>3</sub>La<sub>3</sub>(BO<sub>3</sub>)<sub>5</sub>: Dy<sup>3+</sup> for potential application in UV-LEDs
Open the PDF for Preparation, structure, and luminescent properties of Dy<sup>3+</sup>-doped borate Ca<sub>3</sub>La<sub>3</sub>(BO<sub>3</sub>)<sub>5</sub>: Dy<sup>3+</sup> for potential application in UV-LEDs in another window
Journal Articles

Electroluminescence from 4-nitroaryl organic color centers in semiconducting single-wall carbon nanotubes

Beibei Xu, Xiaojian Wu, Mijin Kim, Peng Wang, YuHuang Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 044305 (2021)
https://doi.org/10.1063/5.0039047
Published: January 2021
View article titled, Electroluminescence from 4-nitroaryl organic color centers in semiconducting single-wall carbon nanotubes
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Journal Articles

Extended quantitative characterization of solar cell from calibrated voltage-dependent electroluminescence imaging

Daniel Ory, Nicolas Paul, Laurent Lombez
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 043106 (2021)
https://doi.org/10.1063/5.0021095
Published: January 2021
View article titled, Extended quantitative characterization of solar cell from calibrated voltage-dependent electroluminescence imaging
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