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Journal Articles

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Yasuhisa Omura, Abhijit Mallik

J. Appl. Phys. 134, 065105 (2023)

https://doi.org/10.1063/5.0156183

Published: August 2023

View article titled, Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Journal Articles

Complementary resistive switching in core–shell nanowires

Shangradhanva E. Vasisth, Juan C. Nino

J. Appl. Phys. 130, 155104 (2021)

https://doi.org/10.1063/5.0062811

Published: October 2021

View article titled, Complementary resistive switching in core–shell nanowires

Includes: Supplementary data

Journal Articles

Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Sanjoy Kumar Nandi, Sujan Kumar Das, Caleb Estherby, Angus Gentle, Robert G. Elliman

J. Appl. Phys. 128, 244103 (2020)

https://doi.org/10.1063/5.0027875

Published: December 2020

View article titled, Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Journal Articles

Čerenkov phonon radiation and phonon structure in electron emission, electroluminescence, and current–voltage characteristics of electroformed Al–Al₂O₃–Ag diodes

T. W. Hickmott

J. Appl. Phys. 127, 165303 (2020)

https://doi.org/10.1063/1.5130758

Published: April 2020

View article titled, Čerenkov phonon radiation and phonon structure in electron emission, electroluminescence, and current–voltage characteristics of electroformed Al–Al2O3–Ag diodes

Journal Articles

Electroforming-free resistive switching in yttrium manganite thin films by cationic substitution

Venkata Rao Rayapati, Danilo Bürger, Nan Du, Rajkumar Patra, Ilona Skorupa, Daniel Blaschke, Hartmut Stöcker, Patrick Matthes, Stefan E. Schulz, Heidemarie Schmidt

J. Appl. Phys. 126, 074102 (2019)

https://doi.org/10.1063/1.5094748

Published: August 2019

View article titled, Electroforming-free resistive switching in yttrium manganite thin films by cationic substitution

Includes: Supplementary data

Journal Articles

Electron emission and ultraviolet electroluminescence from valence-band states and defect conduction bands of electroformed Al-Al₂O₃-Ag diodes

T. W. Hickmott

J. Appl. Phys. 125, 025305 (2019)

https://doi.org/10.1063/1.5024665

Published: January 2019

View article titled, Electron emission and ultraviolet electroluminescence from valence-band states and defect conduction bands of electroformed Al-Al2O3-Ag diodes

Journal Articles

Self-consistent continuum-based transient simulation of electroformation of niobium oxide-tantalum dioxide selector-memristor structures

John F. Sevic, Nobuhiko P. Kobayashi

J. Appl. Phys. 124, 164501 (2018)

https://doi.org/10.1063/1.5040517

Published: October 2018

View article titled, Self-consistent continuum-based transient simulation of electroformation of niobium oxide-tantalum dioxide selector-memristor structures

Journal Articles

Electroforming-free resistive switching in polycrystalline YMnO₃ thin films

Venkata Rao Rayapati, Nan Du, Danilo Bürger, Rajkumar Patra, Ilona Skorupa, Patrick Matthes, Hartmut Stöcker, Stefan E. Schulz, Heidemarie Schmidt

J. Appl. Phys. 124, 144102 (2018)

https://doi.org/10.1063/1.5040041

Published: October 2018

View article titled, Electroforming-free resistive switching in polycrystalline YMnO3 thin films

Journal Articles

Erratum: “Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO 2 /Au structure” [J. Appl. Phys. 118, 185309 (2015)]

Zhensen Tang, Liang Fang, Nuo Xu, Rulin Liu

J. Appl. Phys. 124, 139903 (2018)

https://doi.org/10.1063/1.5055951

Published: October 2018

View article titled, Erratum: “Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO 2 /Au structure” [J. Appl. Phys. 118, 185309 (2015)]

Journal Articles

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

H. Castán, S. Dueñas, H. García, O. G. Ossorio, L. A. Domínguez, B. Sahelices, E. Miranda, M. B. González, F. Campabadal

J. Appl. Phys. 124, 152101 (2018)

https://doi.org/10.1063/1.5024836

Published: September 2018

View article titled, Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Journal Articles

Solution processed flexible resistive switching memory based on Al-In-O self-mixing layer

Weijie Duan, Yong Tang, Xiaoci Liang, Chang Rao, Jinxing Chu, Gang Wang, Yanli Pei

J. Appl. Phys. 124, 104501 (2018)

https://doi.org/10.1063/1.5041469

Published: September 2018

View article titled, Solution processed flexible resistive switching memory based on Al-In-O self-mixing layer

Includes: Supplementary data

Journal Articles

Investigation of the retention performance of an ultra-thin HfO₂ resistance switching layer in an integrated memory device

Gil Seop Kim, Tae Hyung Park, Hae Jin Kim, Tae Jung Ha, Woo Young Park, Soo Gil Kim, Cheol Seong Hwang

J. Appl. Phys. 124, 024102 (2018)

https://doi.org/10.1063/1.5033967

Published: July 2018

View article titled, Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device

Includes: Supplementary data

Journal Articles

Oxygen vacancy chain and conductive filament formation in hafnia

Kan-Hao Xue, Xiang-Shui Miao

J. Appl. Phys. 123, 161505 (2018)

https://doi.org/10.1063/1.4989621

Published: October 2017

View article titled, Oxygen vacancy chain and conductive filament formation in hafnia

Journal Articles

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La_1/3Ca_2/3MnO₃/Pt structures using a compact memristive approach

E. Miranda, W. Román Acevedo, D. Rubi, U. Lüders, P. Granell, J. Suñé, P. Levy

J. Appl. Phys. 121, 205302 (2017)

https://doi.org/10.1063/1.4984051

Published: May 2017

View article titled, Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

Journal Articles

Impact of ultra-thin Al₂O_3–_y layers on TiO_2–_x ReRAM switching characteristics

Maria Trapatseli, Simone Cortese, Alexander Serb, Ali Khiat, Themistoklis Prodromakis

J. Appl. Phys. 121, 184505 (2017)

https://doi.org/10.1063/1.4983006

Published: May 2017

View article titled, Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics

Journal Articles

Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO₂

S. Starschich, S. Menzel, U. Böttger

J. Appl. Phys. 121, 154102 (2017)

https://doi.org/10.1063/1.4981893

Published: April 2017

View article titled, Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

Journal Articles

Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al₂O₃-Ag diodes

T. W. Hickmott

J. Appl. Phys. 121, 083101 (2017)

https://doi.org/10.1063/1.4976715

Published: February 2017

View article titled, Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

Journal Articles

The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

K. Fleck, N. Aslam, S. Hoffmann-Eifert, V. Longo, F. Roozeboom, W. M. M. Kessels, U. Böttger, R. Waser, S. Menzel

J. Appl. Phys. 120, 244502 (2016)

https://doi.org/10.1063/1.4972833

Published: December 2016

View article titled, The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

Journal Articles

Threshold switching and electrical self-oscillation in niobium oxide films

Xinjun Liu, Shuai Li, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam, Robert Glen Elliman

J. Appl. Phys. 120, 124102 (2016)

https://doi.org/10.1063/1.4963288

Published: September 2016

View article titled, Threshold switching and electrical self-oscillation in niobium oxide films

Includes: Supplementary data

Journal Articles

Engineering the switching dynamics of TiO_x-based RRAM with Al doping

Maria Trapatseli, Ali Khiat, Simone Cortese, Alexantrou Serb, Daniela Carta, Themistoklis Prodromakis

J. Appl. Phys. 120, 025108 (2016)

https://doi.org/10.1063/1.4958672

Published: July 2016

View article titled, Engineering the switching dynamics of TiOx-based RRAM with Al doping

NARROW

Topics

Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate

Complementary resistive switching in core–shell nanowires

Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

Čerenkov phonon radiation and phonon structure in electron emission, electroluminescence, and current–voltage characteristics of electroformed Al–Al₂O₃–Ag diodes

Electroforming-free resistive switching in yttrium manganite thin films by cationic substitution

Electron emission and ultraviolet electroluminescence from valence-band states and defect conduction bands of electroformed Al-Al₂O₃-Ag diodes

Self-consistent continuum-based transient simulation of electroformation of niobium oxide-tantalum dioxide selector-memristor structures

Electroforming-free resistive switching in polycrystalline YMnO₃ thin films

Erratum: “Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO 2 /Au structure” [J. Appl. Phys. 118, 185309 (2015)]

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Solution processed flexible resistive switching memory based on Al-In-O self-mixing layer

Investigation of the retention performance of an ultra-thin HfO₂ resistance switching layer in an integrated memory device

Oxygen vacancy chain and conductive filament formation in hafnia

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La_1/3Ca_2/3MnO₃/Pt structures using a compact memristive approach

Impact of ultra-thin Al₂O_3–_y layers on TiO_2–_x ReRAM switching characteristics

Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO₂

Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al₂O₃-Ag diodes

The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

Threshold switching and electrical self-oscillation in niobium oxide films

Engineering the switching dynamics of TiO_x-based RRAM with Al doping

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