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Journal Articles

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

Isshin Sumiyoshi, Yoshitaro Nose

J. Appl. Phys. 133, 235702 (2023)

https://doi.org/10.1063/5.0151739

Published: June 2023

View article titled, Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Includes: Supplementary data

Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 133, 045702 (2023)

https://doi.org/10.1063/5.0121416

Published: January 2023

View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Journal Articles

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Kenneth J. Myers, Patrick M. Lenahan, James P. Ashton, Jason T. Ryan

J. Appl. Phys. 132, 115301 (2022)

https://doi.org/10.1063/5.0101852

Published: September 2022

View article titled, A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Journal Articles

Zeeman spectroscopy of the internal transition ⁴T₁ to ⁶A₁ of Fe³⁺ ions in ZnO

Raphael Müller, Martin Mangold, Sebastian Bauer, Florian Huber, Ulrich Herr, Klaus Thonke

J. Appl. Phys. 132, 065702 (2022)

https://doi.org/10.1063/5.0098499

Published: August 2022

View article titled, Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in ZnO

Includes: Supplementary data

Journal Articles

Characterization methods for defects and devices in silicon carbide

M. E. Bathen, C. T.-K. Lew, J. Woerle, C. Dorfer, U. Grossner, S. Castelletto, B. C. Johnson

J. Appl. Phys. 131, 140903 (2022)

https://doi.org/10.1063/5.0077299

Published: April 2022

View article titled, Characterization methods for defects and devices in silicon carbide

Journal Articles

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

J. Appl. Phys. 131, 124501 (2022)

https://doi.org/10.1063/5.0077107

Published: March 2022

View article titled, Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Journal Articles

Influence of heat treatments in H 2 and Ar on the E₁ center in β-Ga₂O₃

Amanda Langørgen, Christian Zimmermann, Ymir Kalmann Frodason, Espen Førdestrøm Verhoeven, Philip Michael Weiser, Robert Michael Karsthof, Joel Basile Varley, Lasse Vines

J. Appl. Phys. 131, 115702 (2022)

https://doi.org/10.1063/5.0083861

Published: March 2022

View article titled, Influence of heat treatments in H 2 and Ar on the E1 center in β-Ga2O3

Journal Articles

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov, Lasse Vines

J. Appl. Phys. 131, 035702 (2022)

https://doi.org/10.1063/5.0077308

Published: January 2022

View article titled, Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Journal Articles

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga₂O₃ Schottky barrier diodes

Manuel Fregolent, Carlo De Santi, Matteo Buffolo, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

J. Appl. Phys. 130, 245704 (2021)

https://doi.org/10.1063/5.0065434

Published: December 2021

View article titled, Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Journal Articles

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang

J. Appl. Phys. 130, 205701 (2021)

https://doi.org/10.1063/5.0066681

Published: November 2021

View article titled, Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Journal Articles

1 GeV proton damage in β-Ga₂O₃

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton

J. Appl. Phys. 130, 185701 (2021)

https://doi.org/10.1063/5.0068306

Published: November 2021

View article titled, 1 GeV proton damage in β-Ga2O3

Includes: Supplementary data

Journal Articles

M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

I. Capan, T. Brodar, R. Bernat, Ž. Pastuović, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho

J. Appl. Phys. 130, 125703 (2021)

https://doi.org/10.1063/5.0064958

Published: September 2021

View article titled, M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

Journal Articles

High-resolution radiation detection using Ni/SiO₂/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Sandeep K. Chaudhuri, OmerFaruk Karadavut, Joshua W. Kleppinger, Krishna C. Mandal

J. Appl. Phys. 130, 074501 (2021)

https://doi.org/10.1063/5.0059151

Published: August 2021

View article titled, High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Journal Articles

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son

J. Appl. Phys. 130, 065703 (2021)

https://doi.org/10.1063/5.0059953

Published: August 2021

View article titled, Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Journal Articles

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, P. B. Lagov, Yu. S. Pavlov, V. S. Stolbunov, T. V. Kulevoy, I. V. Borzykh, In-Hwan Lee, Fan Ren, S. J. Pearton

J. Appl. Phys. 130, 035701 (2021)

https://doi.org/10.1063/5.0058555

Published: July 2021

View article titled, Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

Journal Articles

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Joshua W. Kleppinger, Sandeep K. Chaudhuri, OmerFaruk Karadavut, Krishna C. Mandal

J. Appl. Phys. 129, 244501 (2021)

https://doi.org/10.1063/5.0049218

Published: June 2021

View article titled, Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Journal Articles

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Eric Vandermolen, Philippe Ferrandis, Frédéric Allibert, Massinissa Nabet, Martin Rack, Jean-Pierre Raskin, Mikaël Cassé

J. Appl. Phys. 129, 215701 (2021)

https://doi.org/10.1063/5.0045306

Published: June 2021

View article titled, Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Journal Articles

Parasitic p–n junctions formed at V-pit defects in p-GaN

P. S. Vergeles, E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, A. V. Chernykh, A. A. Vasilev, A. I. Kochkova, In-Hwan Lee, Stephen J. Pearton

J. Appl. Phys. 129, 155702 (2021)

https://doi.org/10.1063/5.0047742

Published: April 2021

View article titled, Parasitic p–n junctions formed at V-pit defects in p-GaN

Journal Articles

A first-principles understanding of point defects and impurities in GaN

John L. Lyons, Darshana Wickramaratne, Chris G. Van de Walle

J. Appl. Phys. 129, 111101 (2021)

https://doi.org/10.1063/5.0041506

Published: March 2021

View article titled, A first-principles understanding of point defects and impurities in GaN

Journal Articles

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga₂O₃

Jossue Montes, Cameron Kopas, Hong Chen, Xuanqi Huang, Tsung-han Yang, Kai Fu, Chen Yang, Jingan Zhou, Xin Qi, Houqiang Fu, Yuji Zhao

J. Appl. Phys. 128, 205701 (2020)

https://doi.org/10.1063/5.0021859

Published: November 2020

View article titled, Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

NARROW

Topics

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Zeeman spectroscopy of the internal transition ⁴T₁ to ⁶A₁ of Fe³⁺ ions in ZnO

Characterization methods for defects and devices in silicon carbide

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Influence of heat treatments in H 2 and Ar on the E₁ center in β-Ga₂O₃

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga₂O₃ Schottky barrier diodes

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

1 GeV proton damage in β-Ga₂O₃

M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

High-resolution radiation detection using Ni/SiO₂/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Parasitic p–n junctions formed at V-pit defects in p-GaN

A first-principles understanding of point defects and impurities in GaN

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga₂O₃

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