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Journal Articles

Copper-rich complexes in irradiated silicon

Nikolai Yarykin, Jörg Weber

J. Appl. Phys. 136, 125701 (2024)

https://doi.org/10.1063/5.0232388

Published: September 2024

View article titled, Copper-rich complexes in irradiated silicon

Journal Articles

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto

J. Appl. Phys. 136, 095702 (2024)

https://doi.org/10.1063/5.0221700

Published: September 2024

View article titled, Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Journal Articles

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

N. Smith, J. Berens, G. Pobegen, T. Grasser, A. Shluger

J. Appl. Phys. 136, 085702 (2024)

https://doi.org/10.1063/5.0213528

Published: August 2024

View article titled, Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Journal Articles

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

C. A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball

J. Appl. Phys. 136, 045705 (2024)

https://doi.org/10.1063/5.0202581

Published: July 2024

View article titled, Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal Articles

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Amanda Langørgen, Lasse Vines, Ymir Kalmann Frodason

J. Appl. Phys. 135, 195702 (2024)

https://doi.org/10.1063/5.0205950

Published: May 2024

View article titled, Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Journal Articles

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

P. Kumar, M. E. Bathen, M. I. M. Martins, T. Prokscha, U. Grossner

J. Appl. Phys. 135, 185704 (2024)

https://doi.org/10.1063/5.0205965

Published: May 2024

View article titled, Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

Journal Articles

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

L. Sun, P. Kruszewski, V. P. Markevich, C. A. Dawe, A. R. Peaker, I. F. Crowe, J. Plesiewicz, P. Prystawko, Sz. Grzanka, E. Grzanka, R. Jakiela, D. Binks, M. P. Halsall

J. Appl. Phys. 135, 175702 (2024)

https://doi.org/10.1063/5.0205998

Published: May 2024

View article titled, The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton

J. Appl. Phys. 135, 165703 (2024)

https://doi.org/10.1063/5.0203526

Published: April 2024

View article titled, Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

Journal Articles

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

Isshin Sumiyoshi, Yoshitaro Nose

J. Appl. Phys. 133, 235702 (2023)

https://doi.org/10.1063/5.0151739

Published: June 2023

View article titled, Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Includes: Supplementary data

Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 133, 045702 (2023)

https://doi.org/10.1063/5.0121416

Published: January 2023

View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Journal Articles

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Kenneth J. Myers, Patrick M. Lenahan, James P. Ashton, Jason T. Ryan

J. Appl. Phys. 132, 115301 (2022)

https://doi.org/10.1063/5.0101852

Published: September 2022

View article titled, A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Journal Articles

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

J. Appl. Phys. 131, 124501 (2022)

https://doi.org/10.1063/5.0077107

Published: March 2022

View article titled, Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Journal Articles

Influence of heat treatments in H 2 and Ar on the E₁ center in β-Ga₂O₃

Amanda Langørgen, Christian Zimmermann, Ymir Kalmann Frodason, Espen Førdestrøm Verhoeven, Philip Michael Weiser, Robert Michael Karsthof, Joel Basile Varley, Lasse Vines

J. Appl. Phys. 131, 115702 (2022)

https://doi.org/10.1063/5.0083861

Published: March 2022

View article titled, Influence of heat treatments in H 2 and Ar on the E1 center in β-Ga2O3

Journal Articles

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov, Lasse Vines

J. Appl. Phys. 131, 035702 (2022)

https://doi.org/10.1063/5.0077308

Published: January 2022

View article titled, Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Journal Articles

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga₂O₃ Schottky barrier diodes

Manuel Fregolent, Carlo De Santi, Matteo Buffolo, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

J. Appl. Phys. 130, 245704 (2021)

https://doi.org/10.1063/5.0065434

Published: December 2021

View article titled, Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Journal Articles

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang

J. Appl. Phys. 130, 205701 (2021)

https://doi.org/10.1063/5.0066681

Published: November 2021

View article titled, Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Journal Articles

1 GeV proton damage in β-Ga₂O₃

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton

J. Appl. Phys. 130, 185701 (2021)

https://doi.org/10.1063/5.0068306

Published: November 2021

View article titled, 1 GeV proton damage in β-Ga2O3

Includes: Supplementary data

Journal Articles

M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

I. Capan, T. Brodar, R. Bernat, Ž. Pastuović, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho

J. Appl. Phys. 130, 125703 (2021)

https://doi.org/10.1063/5.0064958

Published: September 2021

View article titled, M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

Journal Articles

High-resolution radiation detection using Ni/SiO₂/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Sandeep K. Chaudhuri, OmerFaruk Karadavut, Joshua W. Kleppinger, Krishna C. Mandal

J. Appl. Phys. 130, 074501 (2021)

https://doi.org/10.1063/5.0059151

Published: August 2021

View article titled, High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Journal Articles

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son

J. Appl. Phys. 130, 065703 (2021)

https://doi.org/10.1063/5.0059953

Published: August 2021

View article titled, Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

NARROW

Topics

Copper-rich complexes in irradiated silicon

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

Perspective on electrically active defects in β - G a 2 O 3 from deep-level transient spectroscopy and first-principles calculations

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

The effect of Fe_Ga (0/–) level presence on material properties in dilute Al_xGa_1−xN layers

Trap states and carrier diffusion lengths in NiO/β-Ga₂O₃ heterojunctions

Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP₂

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Transport properties of a thin GaN channel formed in an Al_0.9Ga_0.1N/GaN heterostructure grown on AlN/sapphire template

Influence of heat treatments in H 2 and Ar on the E₁ center in β-Ga₂O₃

Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga₂O₃ Schottky barrier diodes

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

1 GeV proton damage in β-Ga₂O₃

M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

High-resolution radiation detection using Ni/SiO₂/n-4H-SiC vertical metal-oxide-semiconductor capacitor

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

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