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Journal Articles

Chemical-assisted laser ablation coupled with ultrasonic vibration for enhanced SiC wafer thinning

Open Access
Qing Lei, Yiquan Qi, Minghui Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 193101 (2025)
https://doi.org/10.1063/5.0271618
Published: May 2025
View articletitled, Chemical-assisted laser ablation coupled with ultrasonic vibration for enhanced SiC wafer thinning
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Journal Articles

Heterogeneous domain structure induced by alternating current poling in Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal

Open Access
Woo-Jin Choi, Hye-Lim Yu, Jeong-Woo Sun, Sang-Goo Lee, Yoon-Sang Jeong, Wook Jo
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 154101 (2025)
https://doi.org/10.1063/5.0260627
Published: April 2025
View articletitled, Heterogeneous domain structure induced by alternating current poling in Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal
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Journal Articles

Multistate resistance in TaN/(Hf,Zr)O2/Ta ferroelectric tunnel junctions

Open Access
M. David Henry, David Stoltzfus, Megan K. Lenox, Samantha T. Jaszewski, Travis Young, Jon F. Ihlefeld
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 144104 (2025)
https://doi.org/10.1063/5.0256686
Published: April 2025
View articletitled, Multistate resistance in TaN/(Hf,Zr)O2/Ta ferroelectric tunnel junctions
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Journal Articles

Type-n electrical activation of ion-implanted P atoms and unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, using C2+, Ne2+, Si2+ MeV-ion irradiations

Open Access
Jyoji Nakata
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 135703 (2025)
https://doi.org/10.1063/5.0252789
Published: April 2025
View articletitled, Type-n electrical activation of ion-implanted P atoms and unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, using C2+, Ne2+, Si2+ MeV-ion irradiations
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Journal Articles

Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers

Open Access
Zhengfang Fan, Yumeng Liu, Yizhuo Wang, Hao Wei, He Li, Shuwen Guo, Li He, Xiaochun Lai, Yaping Dan
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 125102 (2025)
https://doi.org/10.1063/5.0243124
Published: March 2025
View articletitled, Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers
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Journal Articles

Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)

FeaturedOpen Access
Shuhang Lyu, Thomas Beechem, Tiwei Wei
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 085101 (2025)
https://doi.org/10.1063/5.0252921
Published: February 2025
View articletitled, Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
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Journal Articles

Modeling the charging effect of the hardmask and silicon substrate during plasma etching in advanced nodes

Open Access
Yuxuan Zhai, Rui Ge, Ziyi Hu, Junjie Li, Hua Shao, Jiawei Cheng, Lado Filipovic, Rui Chen
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 063302 (2025)
https://doi.org/10.1063/5.0243470
Published: February 2025
View articletitled, Modeling the charging effect of the hardmask and silicon substrate during plasma etching in advanced nodes
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Journal Articles

Two-step growth of crack-free 5 μm-thick Al0.2Ga0.8N on sapphire substrate with sputtered AlN nucleation layer

Open Access
Y. Q. Li, A. Q. Tian, J. P. Liu, X. Li, F. Z. Li, W. Zhou, M. Ikeda, H. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 065703 (2025)
https://doi.org/10.1063/5.0249836
Published: February 2025
View articletitled, Two-step growth of crack-free 5 μm-thick Al0.2Ga0.8N on sapphire substrate with sputtered AlN nucleation layer
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Journal Articles

On the Czochralski growth of SixGe1−x crystals as substrates for strained Ge quantum well heterostructures

Open Access
Aravind N. Subramanian, Carsten Richter, Alexander Gybin, Merve P. Kabukcuoglu, Elias Hamann, Marcus Zuber, Maximilian Oezkent, Christo Guguschev, Uta Juda, Thomas Schroeder, Nikolay V. Abrosimov, R. Radhakrishnan Sumathi, Kevin-P. Gradwohl
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 065704 (2025)
https://doi.org/10.1063/5.0238533
Published: February 2025
View articletitled, On the Czochralski growth of SixGe1−x crystals as substrates for strained Ge quantum well heterostructures
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Journal Articles

Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon

Editor’s PickOpen Access
Somayeh Shams, Ingmar Ratschinski, Daniel Hiller
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 064301 (2025)
https://doi.org/10.1063/5.0256687
Published: February 2025
View articletitled, Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon
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Journal Articles

Controlling the Mott–Peierls transition in epitaxial VO2 (M1) film grown by PLD for near-IR photodetection

Open Access
Sonika Singh, Jay Krishna Anand, Ujjwal Chitnis, Sakshi Garg, Kanika Arora, Ankur Goswami, Rajendra Singh
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 054501 (2025)
https://doi.org/10.1063/5.0244967
Published: February 2025
View articletitled, Controlling the Mott–Peierls transition in epitaxial VO2 (M1) film grown by PLD for near-IR photodetection
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Journal Articles

Study on chemical mechanism of processing silicon by PMMA in water

Open Access
Jianli Guo, Satoru Egawa, Hiroto Motoyama, Hidekazu Mimura
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 015303 (2025)
https://doi.org/10.1063/5.0237985
Published: January 2025
View articletitled, Study on chemical mechanism of processing silicon by PMMA in water
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Journal Articles

Sub-ablation-threshold light-induced modification of thin ruthenium layers detected using optical reflectance

Open Access
Ester Abram, Nikolai Orlov, Erik C. Garnett, Paul Planken
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245305 (2024)
https://doi.org/10.1063/5.0233239
Published: December 2024
View articletitled, Sub-ablation-threshold light-induced modification of thin ruthenium layers detected using optical reflectance
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Journal Articles

Characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement

Open Access
Haodong Fu, Qi Li, Dongyuan Zhai, Yuwei Wang, Jiwu Lu
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 245702 (2024)
https://doi.org/10.1063/5.0238784
Published: December 2024
View articletitled, Characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors by transient capacitance measurement
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Journal Articles

Effect of TiN electrodes and Gd-doping on HfO2 structural properties

Open Access
M. M. Abdallah, E. V. Skopin, F. Fillot, D. Constantin, M. Abusaa, A. Bsiesy
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 234101 (2024)
https://doi.org/10.1063/5.0239456
Published: December 2024
View articletitled, Effect of TiN electrodes and Gd-doping on HfO2 structural properties
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Journal Articles

Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer

Open Access
James Spencer Lundh, Cory Cress, Alan G. Jacobs, Zhe Cheng, Hannah N. Masten, Joseph A. Spencer, Kohei Sasaki, James Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Michael A. Mastro
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 224502 (2024)
https://doi.org/10.1063/5.0225896
Published: December 2024
View articletitled, Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer
Open the PDF for Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer in another window
Journal Articles

Enhancing up-conversion luminescence in Yb/Er co-doped CsPbCl3 single crystals

Open Access
T. M. Muzyka, A. S. Pushak, Y. M. Furgala, S. Z. Malynych, I. E. Moroz, A. Kotlov, T. M. Demkiv, A. S. Voloshinovskii, R. V. Gamernyk
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 215103 (2024)
https://doi.org/10.1063/5.0232266
Published: December 2024
View articletitled, Enhancing up-conversion luminescence in Yb/Er co-doped CsPbCl3 single crystals
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Journal Articles

Continuous modulation of monolayer MoS2 optical signals using a wedge-like substrate

Editor’s PickOpen Access
Gesong Miao, Xiangrui Xu, Junjie Huang, Gaoxiang Lin, Yanting Xu, Chenyi Huang, Yinghui Zhou, Yufeng Zhang, Weiwei Cai, Xueao Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 213102 (2024)
https://doi.org/10.1063/5.0242549
Published: December 2024
View articletitled, Continuous modulation of monolayer MoS2 optical signals using a wedge-like substrate
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Journal Articles

Defects in semiconductors

Free
Cyrus E. Dreyer, Anderson Janotti, John L. Lyons, Darshana Wickramaratne
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 190401 (2024)
https://doi.org/10.1063/5.0244142
Published: November 2024
View articletitled, Defects in semiconductors
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Journal Articles

Continuous wave GaSb-based interband cascade lasers with hybrid cladding layers operated at room temperature and above

Open Access
Yixuan Shen, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Xiaojun Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 193103 (2024)
https://doi.org/10.1063/5.0221586
Published: November 2024
View articletitled, Continuous wave GaSb-based interband cascade lasers with hybrid cladding layers operated at room temperature and above
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