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Journal Articles

Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications

Manoj Kumar, Manan Suri

J. Appl. Phys. 136, 160701 (2024)

https://doi.org/10.1063/5.0230702

Published: October 2024

View article titled, Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications

Journal Articles

Elucidating temperature-dependent local structure change and optical properties in GeTe phase-change material

Amiya Kumar Mishra, Shivendra Kumar Pandey

J. Appl. Phys. 136, 155304 (2024)

https://doi.org/10.1063/5.0220903

Published: October 2024

View article titled, Elucidating temperature-dependent local structure change and optical properties in GeTe phase-change material

Journal Articles

Antiferromagnetic skyrmion dynamics in stepped geometry for various applications

Shipra Saini, Ravi Shankar Verma, Brajesh Kumar Kaushik

J. Appl. Phys. 136, 133903 (2024)

https://doi.org/10.1063/5.0233071

Published: October 2024

View article titled, Antiferromagnetic skyrmion dynamics in stepped geometry for various applications

Journal Articles

Growth and ferroelectric properties of Al substituted BiFeO₃ epitaxial thin films

Chhatra R. Joshi, Mahendra Acharya, Gary J. Mankey, Arunava Gupta

J. Appl. Phys. 136, 124103 (2024)

https://doi.org/10.1063/5.0220643

Published: September 2024

View article titled, Growth and ferroelectric properties of Al substituted BiFeO3 epitaxial thin films

Journal Articles

Dynamic behavior and stability control of skyrmionium in periodic PMA/damping gradient nanowires

Luowen Wang, Sunan Wang, Wenjin Li, Xiaoping Gao, Ziyang Yu, Qingbo Liu, Lun Xiong, Zhihong Lu, Yue Zhang, Rui Xiong

J. Appl. Phys. 136, 093901 (2024)

https://doi.org/10.1063/5.0223052

Published: September 2024

View article titled, Dynamic behavior and stability control of skyrmionium in periodic PMA/damping gradient nanowires

Journal Articles

Integrated magneto-photonic non-volatile multi-bit memory

H. Pezeshki, P. Li, R. Lavrijsen, M. Heck, B. Koopmans

J. Appl. Phys. 136, 083908 (2024)

https://doi.org/10.1063/5.0221825

Published: August 2024

View article titled, Integrated magneto-photonic non-volatile multi-bit memory

Journal Articles

Electrical activation of insulator-to-metal transition in vanadium dioxide single-crystal nanobeam and their high-frequency switching performances

J.-C. Orlianges, O. Allegret, E.-N. Sirjita, A. Masson, A. Boulle, V. Théry, S. Tardif, J. S. Micha, A. Crunteanu

J. Appl. Phys. 136, 064502 (2024)

https://doi.org/10.1063/5.0221152

Published: August 2024

View article titled, Electrical activation of insulator-to-metal transition in vanadium dioxide single-crystal nanobeam and their high-frequency switching performances

Journal Articles

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Jessica Haglund-Peterson, Benjamin L. Aronson, Samantha T. Jaszewski, Scott Habermehl, Giovanni Esteves, John F. Conley, Jr., Jon F. Ihlefeld, M. David Henry

J. Appl. Phys. 135, 094104 (2024)

https://doi.org/10.1063/5.0191757

Published: March 2024

View article titled, Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Journal Articles

Regulating ferroelectricity in Hf_0.5Zr_0.5O₂ thin films: Exploring the combined impact of oxygen vacancy and electrode stresses

Mingkai Bai, Peizhen Hong, Runhao Han, Junshuai Chai, Bao Zhang, Jingwen Hou, Wenjuan Xiong, Shuai Yang, Jianfeng Gao, Feng Luo, Zongliang Huo

J. Appl. Phys. 134, 174102 (2023)

https://doi.org/10.1063/5.0170657

Published: November 2023

View article titled, Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses

Includes: Supplementary data

Journal Articles

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Mahesh Kumar Yadav, Somnath S. Kundale, Santosh S. Sutar, Tukaram D. Dongale, Pradip Kumar, Neeraj Panwar

J. Appl. Phys. 134, 105101 (2023)

https://doi.org/10.1063/5.0159624

Published: September 2023

View article titled, Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Journal Articles

Nucleation control of high crystal quality heteroepitaxial Sc_0.4Al_0.6N grown by molecular beam epitaxy

Matthew T. Hardy, Andrew C. Lang, Eric N. Jin, Neeraj Nepal, Brian P. Downey, Vikrant J. Gokhale, D. Scott Katzer, Virginia D. Wheeler

J. Appl. Phys. 134, 105301 (2023)

https://doi.org/10.1063/5.0164430

Published: September 2023

View article titled, Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

Journal Articles

Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation

K. Liu, H. J. Song, X. L. Zhong, J. B. Wang, Congbing Tan, Zhao Yang, Shi-wo Ta

J. Appl. Phys. 133, 205302 (2023)

https://doi.org/10.1063/5.0146696

Published: May 2023

View article titled, Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation

Journal Articles

Erratum: “Evolution of switching fields caused by reorientation of GdFeCo/Ir/GdFeCo synthetic ferrimagnet in magnetic field” [J. Appl. Phys. 133, 103903 (2023)]

M. Bakhmetiev, O. Koplak, J.-L. Bello, S. Mangin, R. Morgunov

J. Appl. Phys. 133, 189901 (2023)

https://doi.org/10.1063/5.0155598

Published: May 2023

View article titled, Erratum: “Evolution of switching fields caused by reorientation of GdFeCo/Ir/GdFeCo synthetic ferrimagnet in magnetic field” [J. Appl. Phys. 133, 103903 (2023)]

Journal Articles

Mimicking bacterial learning and memory in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe

Aykut Turfanda, Hilmi Ünlü

J. Appl. Phys. 133, 174301 (2023)

https://doi.org/10.1063/5.0139576

Published: May 2023

View article titled, Mimicking bacterial learning and memory in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe

Journal Articles

Temperature-dependent thermal conductivity of Ge₂Sb₂Te₅ polymorphs from 80 to 500 K

Qinshu Li, Or Levit, Eilam Yalon, Bo Sun

J. Appl. Phys. 133, 135105 (2023)

https://doi.org/10.1063/5.0142536

Published: April 2023

View article titled, Temperature-dependent thermal conductivity of Ge2Sb2Te5 polymorphs from 80 to 500 K

Journal Articles

Remote surface optical phonon scattering in ferroelectric Ba_0.6Sr_0.4TiO₃ gated graphene

Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong

J. Appl. Phys. 132, 154301 (2022)

https://doi.org/10.1063/5.0106939

Published: October 2022

View article titled, Remote surface optical phonon scattering in ferroelectric Ba0.6Sr0.4TiO3 gated graphene

Journal Articles

Effect of variation in glancing angle deposition on resistive switching property of WO₃ thin films for RRAM devices

Shiva Lamichhane, Savita Sharma, Monika Tomar, Arijit Chowdhuri

J. Appl. Phys. 132, 134102 (2022)

https://doi.org/10.1063/5.0103236

Published: October 2022

View article titled, Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices

Journal Articles

Unraveling the optical bandgap and local structural change during phase transition in In₃SbTe₂ material through UV–Vis–NIR and XPS studies

Anushmita Pathak, Shivendra Kumar Pandey

J. Appl. Phys. 131, 205305 (2022)

https://doi.org/10.1063/5.0089399

Published: May 2022

View article titled, Unraveling the optical bandgap and local structural change during phase transition in In3SbTe2 material through UV–Vis–NIR and XPS studies

Journal Articles

Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses

Fabia F. Athena, Matthew P. West, Pradip Basnet, Jinho Hah, Qi Jiang, Wei-Cheng Lee, Eric M. Vogel

J. Appl. Phys. 131, 204901 (2022)

https://doi.org/10.1063/5.0087001

Published: May 2022

View article titled, Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses

Includes: Supplementary data

Journal Articles

Memristor compact model with oxygen vacancy concentrations as state variables

Andre Zeumault, Shamiul Alam, Md Omar Faruk, Ahmedullah Aziz

J. Appl. Phys. 131, 124502 (2022)

https://doi.org/10.1063/5.0087038

Published: March 2022

View article titled, Memristor compact model with oxygen vacancy concentrations as state variables

NARROW

Topics

Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications

Elucidating temperature-dependent local structure change and optical properties in GeTe phase-change material

Antiferromagnetic skyrmion dynamics in stepped geometry for various applications

Growth and ferroelectric properties of Al substituted BiFeO₃ epitaxial thin films

Dynamic behavior and stability control of skyrmionium in periodic PMA/damping gradient nanowires

Integrated magneto-photonic non-volatile multi-bit memory

Electrical activation of insulator-to-metal transition in vanadium dioxide single-crystal nanobeam and their high-frequency switching performances

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Regulating ferroelectricity in Hf_0.5Zr_0.5O₂ thin films: Exploring the combined impact of oxygen vacancy and electrode stresses

Non-volatile resistive switching behavior and time series analysis of Ag/PVA-graphene oxide/Ag device

Nucleation control of high crystal quality heteroepitaxial Sc_0.4Al_0.6N grown by molecular beam epitaxy

Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation

Erratum: “Evolution of switching fields caused by reorientation of GdFeCo/Ir/GdFeCo synthetic ferrimagnet in magnetic field” [J. Appl. Phys. 133, 103903 (2023)]

Mimicking bacterial learning and memory in tungsten based two-sided single layers of WSeO, WSeS, WSeSe, and WSeTe

Temperature-dependent thermal conductivity of Ge₂Sb₂Te₅ polymorphs from 80 to 500 K

Remote surface optical phonon scattering in ferroelectric Ba_0.6Sr_0.4TiO₃ gated graphene

Effect of variation in glancing angle deposition on resistive switching property of WO₃ thin films for RRAM devices

Unraveling the optical bandgap and local structural change during phase transition in In₃SbTe₂ material through UV–Vis–NIR and XPS studies

Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses

Memristor compact model with oxygen vacancy concentrations as state variables

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